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    • 6. 发明授权
    • Method of using a soft subpad for chemical mechanical polishing
    • 使用软垫子进行化学机械抛光的方法
    • US06908366B2
    • 2005-06-21
    • US10339963
    • 2003-01-10
    • John J. Gagliardi
    • John J. Gagliardi
    • B24B37/04B24D13/12B24D13/14B24B1/00
    • B24B37/245B24B37/042B24B37/22
    • The present invention is directed to a method of modifying a wafer surface comprising providing a first abrasive article comprising a first three-dimensional fixed abrasive element and a first subpad generally coextensive with the first fixed abrasive element, contacting a surface of the first three-dimensional fixed abrasive element with a wafer surface, and relatively moving the first abrasive article and the wafer. The method additionally provides providing a second abrasive article comprising a second three-dimensional fixed abrasive element and a second subpad generally coextensive with the second fixed abrasive element, contacting a surface of the second three-dimensional fixed abrasive element with the wafer surface, and relatively moving the second abrasive article and the wafer. Wherein the first subpad has a deflection less than the deflection of the second subpad when measured 1.5 cm from the edge of a 1 kg weight, the weight having a contact area of 1.9 cm diameter.
    • 本发明涉及一种修改晶片表面的方法,包括提供包括第一三维固定研磨元件的第一磨料制品和与第一固定研磨元件共同延伸的第一子垫,与第一三维固定研磨元件的表面接触 具有晶片表面的固定研磨元件,以及相对移动第一磨料制品和晶片。 该方法另外提供了提供包括第二三维固定研磨元件的第二磨料制品和与第二固定研磨元件大体共同延伸的第二子垫,使第二三维固定研磨元件的表面与晶片表面接触, 移动第二磨料制品和晶片。 其中,当距离1kg重量的边缘测量1.5cm时,第一子垫具有小于第二子垫的挠曲的偏转,该重量具有1.9cm直径的接触面积。