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    • 3. 发明授权
    • Method and apparatus for flexibly binning energy discriminating data
    • 方法和设备,用于灵活地将能量鉴别数据并入
    • US07916836B2
    • 2011-03-29
    • US11861826
    • 2007-09-26
    • John Eric TkaczykJames Wilson RoseWen LiJonathan D. ShortYanfeng Du
    • John Eric TkaczykJames Wilson RoseWen LiJonathan D. ShortYanfeng Du
    • H05G1/64H01L27/146
    • G01T1/249A61B6/032G01T1/24
    • A CT detector includes a direct conversion material configured to generate electrical charge upon reception of x-rays, a plurality of metallized anodes configured to collect electrical charges generated in the direct conversion material, at least one readout device, and a redistribution layer having a plurality of electrical pathways configured to route the electrical charges from the plurality of metallized anodes to the at least one readout device. A plurality of switches is coupled to the plurality of electrical pathways between the plurality of metallized anodes and the at least one readout device, wherein each of the plurality of switches includes an input line electrically coupled to one of the plurality of metallized anodes, a first output node electrically coupled to the at least one readout device, and a second output node electrically coupled to at least one other switch of the plurality of switches.
    • CT检测器包括被配置为在接收X射线时产生电荷的直接转换材料,被配置为收集在直接转换材料中产生的电荷的多个金属化阳极,至少一个读出装置和具有多个 电路被配置为将电荷从多个金属化阳极路由到至少一个读出装置。 多个开关耦合到多个金属化阳极与至少一个读出装置之间的多个电路径,其中多个开关中的每一个包括电耦合到多个金属化阳极之一的输入线,第一 电耦合到所述至少一个读出装置的第二输出节点,以及电耦合到所述多个开关中的至少一个其他开关的第二输出节点。
    • 4. 发明申请
    • METHOD AND APPARATUS FOR FLEXIBLY BINNING ENERGY DISCRIMINATING DATA
    • 用于灵活分析能量分辨数据的方法和装置
    • US20090080601A1
    • 2009-03-26
    • US11861826
    • 2007-09-26
    • John Eric TkaczykJames Wilson RoseWen LiJonathan D. ShortYanfeng Du
    • John Eric TkaczykJames Wilson RoseWen LiJonathan D. ShortYanfeng Du
    • A61B6/03H05G1/58
    • G01T1/249A61B6/032G01T1/24
    • A CT detector includes a direct conversion material configured to generate electrical charge upon reception of x-rays, a plurality of metallized anodes configured to collect electrical charges generated in the direct conversion material, at least one readout device, and a redistribution layer having a plurality of electrical pathways configured to route the electrical charges from the plurality of metallized anodes to the at least one readout device. A plurality of switches is coupled to the plurality of electrical pathways between the plurality of metallized anodes and the at least one readout device, wherein each of the plurality of switches includes an input line electrically coupled to one of the plurality of metallized anodes, a first output node electrically coupled to the at least one readout device, and a second output node electrically coupled to at least one other switch of the plurality of switches.
    • CT检测器包括被配置为在接收X射线时产生电荷的直接转换材料,被配置为收集在直接转换材料中产生的电荷的多个金属化阳极,至少一个读出装置和具有多个 电路被配置为将电荷从多个金属化阳极路由到至少一个读出装置。 多个开关耦合到多个金属化阳极与至少一个读出装置之间的多个电路径,其中多个开关中的每一个包括电耦合到多个金属化阳极之一的输入线,第一 电耦合到所述至少一个读出装置的第二输出节点,以及电耦合到所述多个开关中的至少一个其他开关的第二输出节点。
    • 10. 发明授权
    • Apparatus for reducing photodiode thermal gain coefficient and method of making same
    • 减少光电二极管热增益系数的装置及其制作方法
    • US08409908B2
    • 2013-04-02
    • US12512714
    • 2009-07-30
    • Wen LiJonathan D. ShortGeorge E. Possin
    • Wen LiJonathan D. ShortGeorge E. Possin
    • H01L21/00
    • H01L27/14601A61B6/032G01T1/2018G01T1/249H01L31/105
    • An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer.
    • 减少光电二极管热增益系数的装置包括具有光照射侧的体半导体材料。 体半导体材料包括少数电荷载流子扩散长度特性,其被配置为基本上匹配预定的空穴扩散长度值和被配置为基本匹配预定的光电二极管层厚度的厚度。 该装置还包括耦合到体半导体材料的光照射侧的死层,该死层具有被配置为基本匹配预定厚度值的厚度,并且其中由少数载体产生的增益热系数的绝对值 体半导体材料的扩散长度特性被配置为基本上匹配由于死层的厚度而导致的增益热系数的绝对值。