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1. 发明授权

US06825501B2 Robust Group III light emitting diode for high reliability in standard packaging applications 有权
标题翻译：坚固的III类发光二极管，用于标准封装应用中的高可靠性
公开(公告)号：US06825501B2
公开(公告)日：2004-11-30
申请号：US10145222
申请日：2002-05-14
申请人： John Adam Edmond , Brian Thibeault , David Beardsley Slater, Jr. , Gerald H. Negley , Van Allen Mieczkowski
发明人： John Adam Edmond , Brian Thibeault , David Beardsley Slater, Jr. , Gerald H. Negley , Van Allen Mieczkowski
IPC分类号： H01L3300
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity condition. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contract layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准封装中提供高可靠性并且将经受住高温和高湿度条件。二极管包括具有p型III族氮化物收缩层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。还公开了一种制造发光二极管的方法和结合二极管的LED灯。

2. 发明授权

US07125737B2 Robust Group III light emitting diode for high reliability in standard packaging applications 有权
公开(公告)号：US07125737B2
公开(公告)日：2006-10-24
申请号：US10983983
申请日：2004-11-08
申请人： John Adam Edmond , Brian Thibeault , David Beardsley Slater, Jr. , Gerald H. Negley , Van Allen Mieczkowski
发明人： John Adam Edmond , Brian Thibeault , David Beardsley Slater, Jr. , Gerald H. Negley , Van Allen Mieczkowski
IPC分类号： H01L21/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.

3. 发明授权

US07473938B2 Robust Group III light emitting diode for high reliability in standard packaging applications 有权
标题翻译：坚固的III类发光二极管，用于标准封装应用中的高可靠性
公开(公告)号：US07473938B2
公开(公告)日：2009-01-06
申请号：US11539423
申请日：2006-10-06
申请人： John Adam Edmond , Brian Thibeault , David Beardsley Slater, Jr. , Gerald H. Negley , Van Allen Mieczkowski
发明人： John Adam Edmond , Brian Thibeault , David Beardsley Slater, Jr. , Gerald H. Negley , Van Allen Mieczkowski
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。接触层，欧姆接触和钝化层由透射在活性异质结中产生的光的材料制成。

4. 发明申请

US20070085104A1 Robust Group III Light Emitting Diode for High Reliability in Standard Packaging Applications 有权
标题翻译：强大的III类发光二极管在标准封装应用中具有高可靠性
公开(公告)号：US20070085104A1
公开(公告)日：2007-04-19
申请号：US11539423
申请日：2006-10-06
申请人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Allen Mieczkowski
发明人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Allen Mieczkowski
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。接触层，欧姆接触和钝化层由透射在活性异质结中产生的光的材料制成。

5. 发明授权

US07202506B1 Multi element, multi color solid state LED/laser 有权
标题翻译：多元素，多色固态LED /激光
公开(公告)号：US07202506B1
公开(公告)日：2007-04-10
申请号：US09528262
申请日：2000-03-17
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
摘要翻译：在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。铬离子吸收紫外光，激发离子上的电子到更高的能量状态。当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发射绿色，蓝色，红色光和UV光，其组合以产生白光。或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。本发明还能够在各种色调上提供可调LED。本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。

6. 发明申请

US20050095737A1 Robust group III light emitting diode for high reliability in standard packaging applications 有权
标题翻译：坚固的III类发光二极管，用于标准封装应用中的高可靠性
公开(公告)号：US20050095737A1
公开(公告)日：2005-05-05
申请号：US10983983
申请日：2004-11-08
申请人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Mieczkowski
发明人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Mieczkowski
IPC分类号： H01L21/318 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/44 , H01L21/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。还公开了一种制造发光二极管的方法和结合二极管的LED灯。

7. 发明授权

US06885036B2 Scalable LED with improved current spreading structures 有权
标题翻译：可扩展的LED，具有改进的电流扩展结构
公开(公告)号：US06885036B2
公开(公告)日：2005-04-26
申请号：US10606431
申请日：2003-06-25
申请人： Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
发明人： Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
IPC分类号： H01L33/14 , H01L33/20 , H01L33/38 , H01L33/64 , H01L29/22
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20 , H01L33/64
摘要： An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers that form cooperating conductive paths that ensure that current spreads from the p-type and n-type contacts into the fingers and uniformly spreads though the oppositely doped layers. The current then spreads to the active layer to uniformly inject electrons and holes throughout the active layer, which recombine to emit light.
摘要翻译：一种具有改进的电流扩展结构的LED，可以增强电流注入到LED的有源层，从而提高其功率和光通量。当前的扩展结构可以用于比常规LED更大的LED，同时保持增强的电流注入。本发明特别适用于具有绝缘基板的LED，但也可以降低具有导电基板的LED的串联电阻。改进的结构包括形成协调的导电路径的导电指状物，其确保电流从p型和n型触点扩散到指状物中并且通过相对掺杂的层均匀地扩散。电流然后扩散到有源层，以在整个有源层中均匀地注入电子和空穴，其重新发光。

8. 发明授权

US06515313B1 High efficiency light emitters with reduced polarization-induced charges 有权
标题翻译：具有降低的极化诱发电荷的高效率发光体
公开(公告)号：US06515313B1
公开(公告)日：2003-02-04
申请号：US09728788
申请日：2000-11-28
申请人： James Ibbetson , Brian Thibeault
发明人： James Ibbetson , Brian Thibeault
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/16
摘要： Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers grown along a polar direction are reduced, canceled or reversed to improve the emitter's operating efficiency and carrier confinement. This is accomplished by reducing differences in the material compositions of adjacent crystal layers, grading one or more layers to generate space charges and quasi-fields that oppose polarization-induced charges, incorporating various impurities into the semiconductor that ionize into a charge state opposite to the polarization induced charges, inverting the sequence of charged atomic layers, inverting the growth sequence of n- and p-type layers in the device, employing a multilayer emission system instead of a uniform active region and/or changing the in-plane lattice constant of the material.
摘要翻译：在极性方向生长的晶体层的半导体光发射体中自然发生的极化感应电场被减少，抵消或反转，以提高发射体的工作效率和载流子限制。这是通过减少相邻晶体层的材料组成的差异，对一个或多个层进行分级以产生空间电荷和与偏振电荷相反的准场，将各种杂质并入半导体中，将其电离成与偏振感应电荷，反转带电原子层的序列，反转器件中n型和p型层的生长顺序，采用多层发射系统代替均匀的有源区和/或改变面内晶格常数材料。

9. 发明授权

US08035117B2 Multi element, multi color solid state LED/laser 有权
标题翻译：多元素，多色固态LED /激光
公开(公告)号：US08035117B2
公开(公告)日：2011-10-11
申请号：US11484233
申请日：2006-07-10
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state lasers having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth of transition elements.
摘要翻译：在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子电子泵送到更高的能量状态。电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。铬离子吸收紫外光，激发离子上的电子到更高的能量状态。当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色，蓝色和紫外光的有源层，使得LED发射绿色，蓝色，红色和紫外光，结合以产生白光。或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。本发明还能够在各种色调上提供可调LED。本发明也适用于具有一个或多个有源层发射紫外光的固态激光器，其中激光生长在掺杂有一个或多个稀土过渡元素的蓝宝石衬底上。

10. 发明申请

US20090166658A1 LIGHT EMITTING DIODES INCLUDING TWO REFLECTOR LAYERS 有权
标题翻译：发光二极体，包括两个反射层
公开(公告)号：US20090166658A1
公开(公告)日：2009-07-02
申请号：US12360216
申请日：2009-01-27
申请人： David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人： David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
摘要翻译：发光二极管包括具有氮化镓基n型层，有源区和氮化镓基p型层的二极管区。在氮化镓基p型层上设置第一反射层，在氮化镓系n型层上设置第二反射层。还可以提供接合层，安装支架，引线接合和/或透明氧化物层。

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