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1. 发明授权

US08835288B2 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US08835288B2
公开(公告)日：2014-09-16
申请号：US13407249
申请日：2012-02-28
申请人： Johji Nishio , Masaru Furukawa , Hiroshi Kono , Takashi Shinohe
发明人： Johji Nishio , Masaru Furukawa , Hiroshi Kono , Takashi Shinohe
IPC分类号： H01L21/265 , H01L21/425 , H01L21/04 , H01L29/66 , H01L29/861 , H01L29/872 , H01L29/78 , H01L29/06 , H01L29/16
CPC分类号： H01L21/046 , H01L21/045 , H01L21/049 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/7802 , H01L29/8613 , H01L29/872
摘要： A method of manufacturing a silicon carbide semiconductor device of an embodiment includes: implanting ions in a silicon carbide substrate; performing first heating processing of the silicon carbide substrate in which the ions are implanted; and performing second heating processing of the silicon carbide substrate for which the first heating processing is performed, at a temperature lower than the first heating processing.
摘要翻译：制造实施例的碳化硅半导体器件的方法包括：将离子注入碳化硅衬底中; 对其中注入离子的碳化硅衬底进行第一加热处理; 在低于第一加热处理的温度下进行进行了第一加热处理的碳化硅基板的第二加热处理。

2. 发明申请

US20130065382A1 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20130065382A1
公开(公告)日：2013-03-14
申请号：US13407249
申请日：2012-02-28
申请人： Johji Nishio , Masaru Furukawa , Hiroshi Kono , Takashi Shinohe
发明人： Johji Nishio , Masaru Furukawa , Hiroshi Kono , Takashi Shinohe
IPC分类号： H01L21/265
CPC分类号： H01L21/046 , H01L21/045 , H01L21/049 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/7802 , H01L29/8613 , H01L29/872
摘要： A method of manufacturing a silicon carbide semiconductor device of an embodiment includes: implanting ions in a silicon carbide substrate; performing first heating processing of the silicon carbide substrate in which the ions are implanted; and performing second heating processing of the silicon carbide substrate for which the first heating processing is performed, at a temperature lower than the first heating processing.
摘要翻译：制造实施例的碳化硅半导体器件的方法包括：将离子注入碳化硅衬底中; 对其中注入离子的碳化硅衬底进行第一加热处理; 在低于第一加热处理的温度下进行进行了第一加热处理的碳化硅基板的第二加热处理。

3. 发明授权

US09029869B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09029869B2
公开(公告)日：2015-05-12
申请号：US13034264
申请日：2011-02-24
申请人： Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Makoto Mizukami , Takuma Suzuki , Johji Nishio
发明人： Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Makoto Mizukami , Takuma Suzuki , Johji Nishio
IPC分类号： H01L29/15 , H01L29/739 , H01L29/10 , H01L29/66
CPC分类号： H01L29/7395 , H01L29/1033 , H01L29/66333
摘要： One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface.
摘要翻译：半导体器件的一个实施例包括：包含第一和第二主表面的碳化硅衬底; 第一主表面上的第一导电型碳化硅层; 在所述第一碳化硅层的表面处的第二导电型第一碳化硅区域; 在第一碳化硅区域的表面处的第一导电型第二碳化硅区域; 在第一碳化硅区域的表面处的第二导电型第三碳化硅区域; 在第一碳化硅区域和第二碳化硅区域之间形成的杂质浓度高于第一碳化硅区域的第二导电型第四碳化硅区域; 栅极绝缘体; 形成在栅极绝缘体上的栅电极; 层间绝缘体; 连接到所述第二碳化硅区域和所述第三碳化硅区域的第一电极; 和在第二主表面上的第二电极。

4. 发明授权

US07947988B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07947988B2
公开(公告)日：2011-05-24
申请号：US12199848
申请日：2008-08-28
申请人： Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Johji Nishio
发明人： Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Johji Nishio
IPC分类号： H01L29/15
CPC分类号： H01L29/7802 , H01L29/086 , H01L29/0878 , H01L29/0886 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7395
摘要： A semiconductor device includes an SiC substrate, a first SiC layer of first conductivity provided on the substrate, a second SiC layer of second conductivity provided on the first SiC layer, first and second SiC regions provided in the second SiC layer, facing each other and having the same depth, a third SiC region extending through the first SiC region and reaching the first SiC layer, a gate insulator formed on the first and second SiC regions and the second SiC layer interposed therebetween, a gate electrode formed on the gate insulator, a first contact of first conductivity formed on the second SiC region, a second contact of second conductivity formed on the second SiC region, reaching the second SiC layer through the second SiC region, and a top electrode formed on the first and second contacts, and a bottom electrode formed on a back surface of the substrate.
摘要翻译：半导体器件包括SiC衬底，设置在衬底上的第一导电性第一SiC层，设置在第一SiC层上的第二导电性第二SiC层，设置在第二SiC层中的第一和第二SiC区域彼此面对，具有相同深度的第三SiC区域延伸穿过第一SiC区域并到达第一SiC层，形成在第一和第二SiC区域上的第二SiC层和形成在栅极绝缘体上的第二SiC层的栅绝缘体，形成在第二SiC区域上的第一导电体的第一接触，形成在第二SiC区域上的第二导电体的第二接触通过第二SiC区域到达第二SiC层，以及形成在第一和第二接触体上的顶部电极，以及形成在基板的背面上的底部电极。

5. 发明授权

US08686436B2 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US08686436B2
公开(公告)日：2014-04-01
申请号：US13600532
申请日：2012-08-31
申请人： Hiroshi Kono , Takashi Shinohe , Takuma Suzuki , Johji Nishio
发明人： Hiroshi Kono , Takashi Shinohe , Takuma Suzuki , Johji Nishio
IPC分类号： H01L29/16
CPC分类号： H01L29/1608 , H01L29/0696 , H01L29/086 , H01L29/1045 , H01L29/1095 , H01L29/7395 , H01L29/7802
摘要： According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region.
摘要翻译：根据一个实施例，半导体器件包括第一半导体区域，第二半导体区域，第三半导体区域，第四半导体区域，绝缘膜，控制电极，第一电极和第二电极。第一半导体区域包括碳化硅，并且具有第一部分。第二半导体区域设置在第一半导体区域上，并且包括碳化硅。第三半导体区域和第四半导体区域设置在第二半导体区域上，并且包括碳化硅。电极设在膜上。第二半导体区域具有第一区域和第二区域。第一区域与第三半导体区域和第四半导体区域接触。第二区域与第一部分接触。第一区域的杂质浓度高于第二区域的杂质浓度。

6. 发明授权

US08012837B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08012837B2
公开(公告)日：2011-09-06
申请号：US12716403
申请日：2010-03-03
申请人： Johji Nishio , Chiharu Ota , Takuma Suzuki , Hiroshi Kono , Makoto Mizukami , Takashi Shinohe
发明人： Johji Nishio , Chiharu Ota , Takuma Suzuki , Hiroshi Kono , Makoto Mizukami , Takashi Shinohe
IPC分类号： H01L21/336 , H01L21/425 , H01L21/265
CPC分类号： H01L29/7802 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02658 , H01L21/0495 , H01L21/30604 , H01L29/0878 , H01L29/1608 , H01L29/66068 , H01L29/66143 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film.
摘要翻译：提供了即使当使用包括缺陷的碳化硅半导体时也能够实现大规模半导体器件的高产率的半导体器件的制造方法。制造半导体器件的方法包括：在碳化硅半导体衬底上外延生长碳化硅半导体层的步骤; 抛光所述碳化硅半导体层的表面的步骤; 在抛光步骤之后将杂质离子注入到碳化硅半导体层中的步骤; 进行热处理以活化杂质的步骤; 在进行热处理的步骤之后，在碳化硅半导体层的表面上形成第一热氧化膜的工序; 化学去除第一热氧化膜的步骤; 以及在所述碳化硅半导体膜上形成电极层的步骤。

7. 发明申请

US20090078942A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090078942A1
公开(公告)日：2009-03-26
申请号：US12199848
申请日：2008-08-28
申请人： Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Johji Nishio
发明人： Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Johji Nishio
IPC分类号： H01L29/24 , H01L21/04
CPC分类号： H01L29/7802 , H01L29/086 , H01L29/0878 , H01L29/0886 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7395
摘要： A semiconductor device includes an SiC substrate, a first SiC layer of first conductivity provided on the substrate, a second SiC layer of second conductivity provided on the first SiC layer, first and second SiC regions provided in the second SiC layer, facing each other and having the same depth, a third SiC region extending through the first SiC region and reaching the first SiC layer, a gate insulator formed on the first and second SiC regions and the second SiC layer interposed therebetween, a gate electrode formed on the gate insulator, a first contact of first conductivity formed on the second SiC region, a second contact of second conductivity formed on the second SiC region, reaching the second SiC layer through the second SiC region, and a top electrode formed on the first and second contacts, and a bottom electrode formed on a back surface of the substrate.
摘要翻译：半导体器件包括SiC衬底，设置在衬底上的第一导电性第一SiC层，设置在第一SiC层上的第二导电性第二SiC层，设置在第二SiC层中的第一和第二SiC区域彼此面对，具有相同深度的第三SiC区域延伸穿过第一SiC区域并到达第一SiC层，形成在第一和第二SiC区域上的第二SiC层和形成在栅极绝缘体上的第二SiC层的栅绝缘体，形成在第二SiC区域上的第一导电体的第一接触，形成在第二SiC区域上的第二导电体的第二接触通过第二SiC区域到达第二SiC层，以及形成在第一和第二接触体上的顶部电极，以及形成在基板的背面上的底部电极。

8. 发明申请

US20120056195A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120056195A1
公开(公告)日：2012-03-08
申请号：US13034264
申请日：2011-02-24
申请人： Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Makoto Mizukami , Takuma Suzuki , Johji Nishio
发明人： Hiroshi Kono , Takashi Shinohe , Chiharu Ota , Makoto Mizukami , Takuma Suzuki , Johji Nishio
IPC分类号： H01L29/161
CPC分类号： H01L29/7395 , H01L29/1033 , H01L29/66333
摘要： One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface.
摘要翻译：半导体器件的一个实施例包括：包含第一和第二主表面的碳化硅衬底; 第一主表面上的第一导电型碳化硅层; 在所述第一碳化硅层的表面处的第二导电型第一碳化硅区域; 在第一碳化硅区域的表面处的第一导电型第二碳化硅区域; 在第一碳化硅区域的表面处的第二导电型第三碳化硅区域; 在第一碳化硅区域和第二碳化硅区域之间形成的杂质浓度高于第一碳化硅区域的第二导电型第四碳化硅区域; 栅极绝缘体; 形成在栅绝缘体上的栅电极; 层间绝缘体; 连接到所述第二碳化硅区域和所述第三碳化硅区域的第一电极; 和在第二主表面上的第二电极。

9. 发明申请

US20110059597A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110059597A1
公开(公告)日：2011-03-10
申请号：US12716403
申请日：2010-03-03
申请人： Johji Nishio , Chiharu Ota , Takuma Suzuki , Hiroshi Kono , Makoto Mizukami , Takashi Shinohe
发明人： Johji Nishio , Chiharu Ota , Takuma Suzuki , Hiroshi Kono , Makoto Mizukami , Takashi Shinohe
IPC分类号： H01L21/20
CPC分类号： H01L29/7802 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02658 , H01L21/0495 , H01L21/30604 , H01L29/0878 , H01L29/1608 , H01L29/66068 , H01L29/66143 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film.
摘要翻译：提供了即使当使用包括缺陷的碳化硅半导体时也能够实现大规模半导体器件的高产率的半导体器件的制造方法。制造半导体器件的方法包括：在碳化硅半导体衬底上外延生长碳化硅半导体层的步骤; 抛光所述碳化硅半导体层的表面的步骤; 在抛光步骤之后将杂质离子注入到碳化硅半导体层中的步骤; 进行热处理以活化杂质的步骤; 在进行热处理的步骤之后，在碳化硅半导体层的表面上形成第一热氧化膜的工序; 化学去除第一热氧化膜的步骤; 以及在所述碳化硅半导体膜上形成电极层的步骤。

10. 发明授权

US08686437B2 DIMOSFET SiC semiconductor device 有权
标题翻译： DIMOSFET SiC半导体器件
公开(公告)号：US08686437B2
公开(公告)日：2014-04-01
申请号：US13601408
申请日：2012-08-31
申请人： Hiroshi Kono , Takashi Shinohe , Takuma Suzuki , Johji Nishio
发明人： Hiroshi Kono , Takashi Shinohe , Takuma Suzuki , Johji Nishio
IPC分类号： H01L29/15
CPC分类号： H01L21/0465 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/66477 , H01L29/7395 , H01L29/7802 , H01L29/7827
摘要： According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration.
摘要翻译：根据一个实施例，半导体器件包括第一，第二，第三，第四和第五半导体区域，绝缘膜，控制电极以及第一和第二电极。第一，第二，第三，第四和第五半导体区域包括碳化硅。第一半导体区域具有第一杂质浓度，并且具有第一部分。第二半导体区域设置在第一半导体区域上。第三半导体区域设置在第二半导体区域上。第四半导体区域设置在第一部分和第二半导体区域之间。第四半导体区域设置在第一部分和第三半导体区域之间。第五半导体区域包括设置在第一部分和第二半导体区域之间的第一区域，并且具有高于第一杂质浓度的第二杂质浓度。

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