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    • 2. 发明授权
    • Method of manufacturing a semiconductor device and semiconductor device
    • 制造半导体器件和半导体器件的方法
    • US06878573B2
    • 2005-04-12
    • US10480113
    • 2002-06-17
    • Johannus Wilhelmus WeekampMarc Andre De SamberDurandus Kornelius Dijken
    • Johannus Wilhelmus WeekampMarc Andre De SamberDurandus Kornelius Dijken
    • H01L23/28H01L21/48H01L21/56H01L23/051H01L23/12H01L23/29H01L23/31H01L23/538H01L23/66H01L25/065H01L21/44
    • H01L23/3107H01L21/56H01L23/051H01L23/66H01L25/0652H01L2224/05001H01L2224/05022H01L2224/051H01L2224/05571H01L2224/056H01L2224/16H01L2924/01079H01L2924/1423H01L2924/00014
    • The invention relates to a method of manufacturing a semiconductor device (10), wherein a semiconductor element (1) provided with a number of connection regions (2) is fitted between a first, electroconductive plate (3) and a second plate (4), wherein two connection conductors (3A, 3B) are formed, from the first plate (3), for the two connection regions (2A, 2B) of the element (1), wherein a passivating encapsulation (5) is provided between the plates (3, 4) and around the element (1), and wherein the device (10) is formed by applying a mechanical separating technique in two mutually perpendicular directions (L, M).In a method according to the invention, the connection conductors (3A, 3B) are formed by providing a mask (6) on the first conducting plate (3) in such a manner that a part (3C) of the plate (3) situated between the connection regions (2A, 2B) remains exposed, which part is subsequently removed by etching. Such a method enables a very compact discrete or at least semi-discrete semiconductor device (10) to be readily obtained at low cost, while a high yield is achieved. In a preferred embodiment, also further parts (3D) of the conducting plate (3) situated at the location where the device (10) is to be sawn, cut or broken remain uncovered by the mask (6) and are removed during etching.
    • 本发明涉及一种制造半导体器件(10)的方法,其中在第一导电板(3)和第二板(4)之间安装设有多个连接区域(2)的半导体元件(1) ,其中,对于所述元件(1)的两个连接区域(2A,2B),从所述第一板(3)形成两个连接导体(3A,3B),其中在所述板之间设置钝化封装(5) (3,4)并且围绕所述元件(1),并且其中所述装置(10)通过在两个相互垂直的方向(L,M)上施加机械分离技术而形成。在根据本发明的方法中,连接导体 (3A,3B)通过在第一导电板(3)上设置掩模(6)而形成,使得位于连接区域(2A,2B)之间的板(3)的部分(3C)保持暴露 ,随后通过蚀刻去除该部分。 这种方法使得能够以低成本容易地获得非常紧凑的离散或至少半分立半导体器件(10),同时实现高产率。 在优选实施例中,位于设备(10)将被锯,切割或断裂的位置处的导电板(3)的另外的部分(3D)保持未被掩模(6)覆盖,并且在蚀刻期间被移除。
    • 3. 发明授权
    • Electrode-type heat sink
    • 电极式散热片
    • US07105922B2
    • 2006-09-12
    • US11065564
    • 2005-02-24
    • Johannus Wilhelmus WeekampMarc Andre De SamberDurandus Kornelius Dijken
    • Johannus Wilhelmus WeekampMarc Andre De SamberDurandus Kornelius Dijken
    • H01L23/34
    • H01L23/3107H01L21/56H01L23/051H01L23/66H01L25/0652H01L2224/05001H01L2224/05022H01L2224/051H01L2224/05571H01L2224/056H01L2224/16H01L2924/01079H01L2924/1423H01L2924/00014
    • The invention relates to a method of manufacturing a semiconductor device (10), wherein a semiconductor element (1) provided with a number of connection regions (2) is fitted between a first, electroconductive plate (3) and a second plate (4), wherein two connection conductors (3A, 3B) are formed, from the first plate (3), for the two connection regions (2A, 2B) of the element (1), wherein a passivating encapsulation (5) is provided between the plates (3, 4) and around the element (1), and wherein the device (10) is formed by applying a mechanical separating technique in two mutually perpendicular directions (L, M).In a method according to the invention, the connection conductors (3A, 3B) are formed by providing a mask (6) on the first conducting plate (3) in such a manner that a part (3C) of the plate (3) situated between the connection regions (2A, 2B) remains exposed, which part is subsequently removed by etching. Such a method enables a very compact discrete or at least semi-discrete semiconductor device (10) to be readily obtained at low cost, while a high yield is achieved. In a preferred embodiment, also further parts (3D) of the conducting plate (3) situated at the location where the device (10) is to be sawn, cut or broken remain uncovered by the mask (6) and are removed during etching.
    • 本发明涉及一种制造半导体器件(10)的方法,其中在第一导电板(3)和第二板(4)之间安装设有多个连接区域(2)的半导体元件(1) ,其中,对于所述元件(1)的两个连接区域(2A,2B),从所述第一板(3)形成两个连接导体(3A,3B),其中钝化封装(5)为 设置在板(3,4)之间并且围绕元件(1),并且其中通过在两个相互垂直的方向(L,M)上施加机械分离技术来形成装置(10)。 在根据本发明的方法中,连接导体(3A,3B)通过在第一导电板(3)上设置掩模(6)而形成,使得板的部分(3C) 位于连接区域(2A,2B)之间的3)保持暴露,随后通过蚀刻去除该部分。 这种方法使得能够以低成本容易地获得非常紧凑的离散或至少半分立半导体器件(10),同时实现高产率。 在优选实施例中,位于设备(10)被锯,切割或断裂的位置处的导电板(3)的另外的部分(3D)保持未被掩模(6)覆盖,并且在蚀刻期间被移除 。
    • 5. 发明申请
    • LIGHT EMITING MODULE, A LAMP, A LUMINAIRE AND A DISPLAY DEVICE
    • 灯光模块,灯,灯泡和显示装置
    • US20150009649A1
    • 2015-01-08
    • US14232916
    • 2012-03-23
    • Hendrik Johannes Boudewijn JagtOlexandr Velentynovych VdovinCoen Adrianus VerschurenDurandus Kornelius DijkenChristian KleijnenMarcellinus Petrus Carolus Michael Krijn
    • Hendrik Johannes Boudewijn JagtOlexandr Velentynovych VdovinCoen Adrianus VerschurenDurandus Kornelius DijkenChristian KleijnenMarcellinus Petrus Carolus Michael Krijn
    • F21K99/00
    • F21K9/62F21K9/64F21Y2113/13F21Y2115/10H01L33/507H01L33/60H01L2924/0002H01L2933/0091H01L2924/00
    • A light emitting module (150) emits light through a light exit window (104) and comprises a base (110), a solid state light emitter (154, 158) and a partially diffusive reflective layer (102). The base (110) has a light reflective surface (112) which faces towards the light exit window (104). The light reflective surface (112) has a base reflection coefficient Rbase which is defined by a ratio between the amount of light that is reflected by the light reflective surface and the amount of light that impinges on the light reflective surface. The solid state light emitter (154, 158) emits light of a first color range (114), comprises a top surface (152, 158) and has a solid state light emitter reflection coefficient R_SSL which is defined by a ratio between the amount of light that is reflected by the solid state emitter (154,156) and the amount of light that impinges on the top surface (152, 158) of the solid state light emitter (1154, 156). A largest linear size dssL of the top surface (106) of the at least one solid state light emitter is defined as the longest distance from a point on the top surface (152, 158) of the at least one solid state light emitter to another point on the top surface (152, 158) of the at least one solid state light emitter along a straight line. The light exit window (104) comprises at least a part of the partially diffusive reflective layer (102). A solid state light emitter area ratio ρSSL is defined as the ratio between the area of the top surface of the at least one solid state light emitter and the area of the light reflective surface of the base. A gap with a distance h is present between the top surface (152, 158) of the at least one solid state light emitter
    • 发光模块(150)通过光出射窗(104)发射光,并且包括基底(110),固态光发射器(154,158)和部分漫反射层(102)。 基部(110)具有面向光出射窗(104)的光反射表面(112)。 光反射表面(112)具有由反射光反射表面反射的光量与入射到光反射表面上的光量之间的比值所限定的基底反射系数Rbase。 固态光发射器(154,158)发射第一颜色范围(114)的光,包括顶表面(152,158),并且具有固态光发射器反射系数R_SSL,其由 由固态发射器(154,156)反射的光和照射在固态光发射器(1154,156)的顶表面(152,158)上的光量。 至少一个固态光发射器的顶表面(106)的最大线性尺寸dssL被定义为从至少一个固态光发射器的顶表面(152,158)上的点到另一固态光发射器的最长距离 沿着直线指向至少一个固态发光器的顶表面(152,158)。 光出射窗(104)包括部分漫反射层(102)的至少一部分。 固态光发射器面积比&SSL被定义为至少一个固态光发射器的顶表面的面积与基底的光反射表面的面积之比。 在至少一个固态光发射器的顶表面(152,158)之间存在距离为h的间隙