专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08603426B1 Method of making a silicon-containing film 有权
标题翻译：制造含硅膜的方法
公开(公告)号：US08603426B1
公开(公告)日：2013-12-10
申请号：US13730432
申请日：2012-12-28
申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
发明人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC分类号： C01B21/068
CPC分类号： C01B6/00 , C01B6/003 , C01B6/34
摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译：制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺，与传统的光刻工艺。

2. 发明授权

US08066805B2 Metal inks, methods of making the same, and methods for printing and/or forming metal films 有权
标题翻译：金属油墨，其制造方法以及印刷和/或形成金属膜的方法
公开(公告)号：US08066805B2
公开(公告)日：2011-11-29
申请号：US12131002
申请日：2008-05-30
申请人： Fabio Zürcher , Aditi Chandra , Wenzhuo Guo , Erik Scher , Mao Takashima , Joerg Rockenberger
发明人： Fabio Zürcher , Aditi Chandra , Wenzhuo Guo , Erik Scher , Mao Takashima , Joerg Rockenberger
IPC分类号： C23C16/00 , C09D1/00 , B05D3/00
CPC分类号： C23C18/1692 , B41M3/006 , C08K3/10 , C09D7/61 , C09D11/38 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/1658 , C23C18/31 , C23C18/44
摘要： Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film.
摘要翻译：公开了可印刷金属配方，制备方法，以及从金属油墨前体涂布或印刷薄膜的方法。金属配方通常包括一种或多种组合物4,5,6,7,8,9,10,11或12金属盐或金属配合物，一种或多种适于促进制剂涂布和/或印刷的溶剂，以及一种或多种任选的添加剂，其在将金属盐或金属络合物还原成元素金属和/或其合金时形成（仅）气态或挥发性副产物。制剂可以通过将金属盐或金属络合物和溶剂组合，并将金属盐或金属络合物溶解在溶剂中来形成制剂，。薄膜可以通过在基底上涂覆或印刷金属制剂来制备; 除去溶剂以形成含金属的前体膜; 并还原含金属的前体膜。

3. 发明申请

US20110240997A1 Epitaxial Structures, Methods of Forming the Same, and Devices Including the Same 有权
标题翻译：外延结构，其形成方法及包括其的装置
公开(公告)号：US20110240997A1
公开(公告)日：2011-10-06
申请号：US13081257
申请日：2011-04-06
申请人： Joerg ROCKENBERGER , Fabio Zürcher , Mao Takashima
发明人： Joerg ROCKENBERGER , Fabio Zürcher , Mao Takashima
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02428 , H01L21/0243 , H01L21/02494 , H01L21/02532 , H01L21/02587 , H01L21/02628 , H01L21/02661 , H01L21/228 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Epitaxial structures, methods of making epitaxial structures, and devices incorporating such epitaxial structures are disclosed. The methods and the structures employ a liquid-phase Group IVA semiconductor element precursor ink (e.g., including a cyclo- and/or polysilane) and have a relatively good film quality (e.g., texture, density and/or purity). The Group IVA semiconductor element precursor ink forms an epitaxial film or feature when deposited on a (poly)crystalline substrate surface and heated sufficiently for the Group IVA semiconductor precursor film or feature to adopt the (poly)crystalline structure of the substrate surface. Devices incorporating a selective emitter that includes the present epitaxial structure may exhibit improved power conversion efficiency relative to a device having a selective emitter made without such a structure due to the improved film quality and/or the perfect interface formed in regions between the epitaxial film and contacts formed on the film.
摘要翻译：公开了外延结构，制造外延结构的方法和结合这种外延结构的器件。方法和结构采用液相IVA族半导体元件前体油墨（例如，包括环和/或聚硅烷）并且具有相对较好的膜质量（例如质地，密度和/或纯度）。当IVA半导体元件前体油墨沉积在（多）晶体衬底表面上时，IVA半导体元件前体油墨形成外延膜或特征，并充分加热以使IVA族半导体前体膜或特征采用衬底表面的（多）晶体结构。结合包括本外延结构的选择性发射极的器件相对于具有选择性发射极的器件而言，具有提高的功率转换效率，由于改善的膜质量和/或在外延膜和在电影上形成的触点。

4. 发明授权

US08900915B2 Epitaxial structures and methods of forming the same 有权
标题翻译：外延结构及其形成方法
公开(公告)号：US08900915B2
公开(公告)日：2014-12-02
申请号：US13081257
申请日：2011-04-06
申请人： Joerg Rockenberger , Fabio Zürcher , Mao Takashima
发明人： Joerg Rockenberger , Fabio Zürcher , Mao Takashima
IPC分类号： H01L31/078 , H01L21/02 , H01L31/068 , H01L31/18
CPC分类号： H01L21/0237 , H01L21/02428 , H01L21/0243 , H01L21/02494 , H01L21/02532 , H01L21/02587 , H01L21/02628 , H01L21/02661 , H01L21/228 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Epitaxial structures, methods of making epitaxial structures, and devices incorporating such epitaxial structures are disclosed. The methods and the structures employ a liquid-phase Group IVA semiconductor element precursor ink (e.g., including a cyclo- and/or polysilane) and have a relatively good film quality (e.g., texture, density and/or purity). The Group IVA semiconductor element precursor ink forms an epitaxial film or feature when deposited on a (poly)crystalline substrate surface and heated sufficiently for the Group IVA semiconductor precursor film or feature to adopt the (poly)crystalline structure of the substrate surface. Devices incorporating a selective emitter that includes the present epitaxial structure may exhibit improved power conversion efficiency relative to a device having a selective emitter made without such a structure due to the improved film quality and/or the perfect interface formed in regions between the epitaxial film and contacts formed on the film.
摘要翻译：公开了外延结构，制造外延结构的方法和结合这种外延结构的器件。方法和结构采用液相IVA族半导体元件前体油墨（例如，包括环和/或聚硅烷）并且具有相对较好的膜质量（例如质地，密度和/或纯度）。当IVA半导体元件前体油墨沉积在（多）晶体衬底表面上时，IVA半导体元件前体油墨形成外延膜或特征，并充分加热以使IVA族半导体前体膜或特征采用衬底表面的（多）晶体结构。结合包括本外延结构的选择性发射极的器件相对于具有选择性发射极的器件而言，具有提高的功率转换效率，由于改善的膜质量和/或在外延膜和在电影上形成的触点。

5. 发明授权

US06957608B1 Contact print methods 失效
标题翻译：联系打印方法
公开(公告)号：US06957608B1
公开(公告)日：2005-10-25
申请号：US10288357
申请日：2002-11-04
申请人： Brian Hubert , Colin Bulthaup , Chris Gudeman , Chris Spindt , Scott Haubrich , Mao Takashima , Joerg Rockenberger , Klaus Kunze , Fabio Zurcher
发明人： Brian Hubert , Colin Bulthaup , Chris Gudeman , Chris Spindt , Scott Haubrich , Mao Takashima , Joerg Rockenberger , Klaus Kunze , Fabio Zurcher
IPC分类号： B41C1/00 , H01L51/40 , H05K3/12
CPC分类号： H01L51/0021 , H01L51/0022 , H01L51/0023 , H05K3/12
摘要： A method of and device for controlled printing using liquid embossing techniques is disclosed. In accordance with the embodiments of the invention a stamp comprises a differentiated embossing surface with protruding and recessed surfaces to enhance the ability of the stamp to selectively displace liquid ink from a print surface and/or remove solvent from the liquid in a soft curing process. A stamp with differentiated surfaces is fabricated by selectively coating, or otherwise treating the protruding features, the recessed features, or a combination thereof, such that the surface energies and/or wettability of the protruding surfaces and the recessed surfaces are differentiated.
摘要翻译：公开了一种使用液体压花技术进行控制印刷的方法和装置。根据本发明的实施例，印模包括具有突出和凹陷表面的差异化压花表面，以增强印模在软化固化过程中从印刷表面选择性地移出液体油墨和/或从液体中除去溶剂的能力。通过选择性地涂覆或以其它方式处理突出特征，凹陷特征或其组合来制造具有不同表面的印模，使得突出表面和凹陷表面的表面能量和/或润湿性不同。

6. 发明申请

US20120181636A1 Printing of Contact Metal and Interconnect Metal Via Seed Printing and Plating 有权
标题翻译：通过种子印刷和电镀印刷接触金属和互连金属
公开(公告)号：US20120181636A1
公开(公告)日：2012-07-19
申请号：US13427091
申请日：2012-03-22
申请人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
发明人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
IPC分类号： H01L29/772 , H01L23/485 , H01L21/336
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
摘要翻译：公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子。这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。

7. 发明申请

US20090020829A1 PRINTING OF CONTACT METAL AND INTERCONNECT METAL VIA SEED PRINTING AND PLATING 有权
标题翻译：通过种子印刷和镀层印刷接触金属和互连金属
公开(公告)号：US20090020829A1
公开(公告)日：2009-01-22
申请号：US12175450
申请日：2008-07-17
申请人： Aditi CHANDRA , Arvind KAMATH , James Montague CLEEVES , Joerg ROCKENBERGER , Mao Takashima , Erik SCHER
发明人： Aditi CHANDRA , Arvind KAMATH , James Montague CLEEVES , Joerg ROCKENBERGER , Mao Takashima , Erik SCHER
IPC分类号： H01L21/768 , H01L21/28 , H01L29/78
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
摘要翻译：公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。形成接触的方法包括将硅化物形成金属的油墨沉积到暴露的硅表面上，干燥油墨以形成形成硅化物的金属前体，以及加热形成硅化物的金属前体和硅表面以形成金属硅化物联系。任选地，可以将金属前体油墨选择性地沉积到与暴露的硅表面相邻的电介质层上，以形成含金属互连。此外，一个或多个体导电金属可以沉积在剩余的金属前体油墨和/或介电层上。可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子。这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。

8. 发明授权

US08158518B2 Methods of making metal silicide contacts, interconnects, and/or seed layers 有权
标题翻译：制造金属硅化物接触，互连和/或种子层的方法
公开(公告)号：US08158518B2
公开(公告)日：2012-04-17
申请号：US12175450
申请日：2008-07-17
申请人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
发明人： Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L21/28518 , H01L21/32051 , H01L21/32053 , H01L21/76838 , H01L21/76873 , H01L21/76895 , H01L27/1285 , H01L27/1292 , H01L29/458 , H01L29/78618 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
摘要翻译：公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。形成接触的方法包括将硅化物形成金属的油墨沉积到暴露的硅表面上，干燥油墨以形成形成硅化物的金属前体，以及加热形成硅化物的金属前体和硅表面以形成金属硅化物联系。任选地，可以将金属前体油墨选择性地沉积到与暴露的硅表面相邻的电介质层上，以形成含金属互连。此外，一个或多个体导电金属可以沉积在剩余的金属前体油墨和/或介电层上。可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子。这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。

9. 发明授权

US08367031B1 Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom 有权
标题翻译：硅烷组合物，其制备方法，形成半导体和/或含硅膜的方法以及从其形成的薄膜结构
公开(公告)号：US08367031B1
公开(公告)日：2013-02-05
申请号：US13349838
申请日：2012-01-13
申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
发明人： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC分类号： C01B31/36
CPC分类号： C01B6/00 , C01B6/003 , C01B6/34
摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译：制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺，与传统的光刻工艺。

10. 发明申请

US20090004370A1 Metal Inks, Methods of Making the Same, and Methods for Printing and/or Forming Metal Films 有权
标题翻译：金属油墨，其制造方法以及印刷和/或形成金属膜的方法
公开(公告)号：US20090004370A1
公开(公告)日：2009-01-01
申请号：US12131002
申请日：2008-05-30
申请人： Fabio ZURCHER , Aditi Chandra , Wenzhuo Guo , Erik Scher , Mao Takashima , Joerg Rockenberger
发明人： Fabio ZURCHER , Aditi Chandra , Wenzhuo Guo , Erik Scher , Mao Takashima , Joerg Rockenberger
IPC分类号： B05D5/12 , C09D11/02 , C09D1/00 , B05D5/00
CPC分类号： C23C18/1692 , B41M3/006 , C08K3/10 , C09D7/61 , C09D11/38 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/1658 , C23C18/31 , C23C18/44
摘要： Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film.
摘要翻译：公开了可印刷金属配方，制备方法，以及从金属油墨前体涂布或印刷薄膜的方法。金属配方通常包括一种或多种组合物4,5,6,7,8,9,10,11或12金属盐或金属配合物，一种或多种适于促进制剂涂布和/或印刷的溶剂，以及一种或多种任选的添加剂，其在将金属盐或金属络合物还原成元素金属和/或其合金时形成（仅）气态或挥发性副产物。制剂可以通过将金属盐或金属络合物和溶剂组合，并将金属盐或金属络合物溶解在溶剂中来形成制剂，。薄膜可以通过在基底上涂覆或印刷金属制剂来制备; 除去溶剂以形成含金属的前体膜; 并还原含金属的前体膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式