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1. 发明授权

US08425793B2 Process and device for cleaning and etching a substrate with a transparent conductive oxide layer 失效
标题翻译：用透明导电氧化物层清洗和蚀刻衬底的工艺和装置
公开(公告)号：US08425793B2
公开(公告)日：2013-04-23
申请号：US11547869
申请日：2005-03-31
申请人： Joachim Müller , Gunnar Schöpe , Hildegard Siekmann , Bernd Rech , Tobias Repmann , Wolfgang Apenzeller , Brigitte Sehrbrock
发明人： Joachim Müller , Gunnar Schöpe , Hildegard Siekmann , Bernd Rech , Tobias Repmann , Wolfgang Apenzeller , Brigitte Sehrbrock
IPC分类号： C03C15/00
CPC分类号： H01L21/6708
摘要： A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturize ZnO layers of up to 1 m2. The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.
摘要翻译：公开了一种简单的方法来处理在刚性或柔性载体上具有预结构化氧化锌层的基底。用蚀刻介质然后用清洗液处理ZnO。在通过设备输送衬底的同时进行用蚀刻和清洁液体的处理。该工艺在技术上易于实现，并且可以定期均匀地使高达1m 2的ZnO层变粗糙和变形。用于处理在刚性或柔性载体上具有预结构化氧化锌层的基底的装置为此需要用蚀刻液处理基底的第一装置，用清洗液处理基底的第二装置，特定传送辊，用于将基板从第一装置传送到第二装置。

2. 发明申请

US20080296262A1 Process and Device for Cleaning and Etching a Substrate Wi 失效
标题翻译：用于清洗和蚀刻基板的工艺和装置
公开(公告)号：US20080296262A1
公开(公告)日：2008-12-04
申请号：US11547869
申请日：2005-03-31
申请人： Joachim Muller , Gunnar Schope , Hildegard Siekmann , Bernd Rech , Tobias Repmann , Wolfgang Apenzeller , Brigitte Sehrbrock
发明人： Joachim Muller , Gunnar Schope , Hildegard Siekmann , Bernd Rech , Tobias Repmann , Wolfgang Apenzeller , Brigitte Sehrbrock
IPC分类号： B44C1/22 , H01L21/306
CPC分类号： H01L21/6708
摘要： A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturise ZnO layers of up to 1 m2. The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.
摘要翻译：公开了一种简单的方法来处理在刚性或柔性载体上具有预结构化氧化锌层的基底。用蚀刻介质然后用清洗液处理ZnO。在通过设备输送基板的同时进行用蚀刻和清洁液体的处理。该工艺在技术上易于实现，并且可以定期和均匀地粗糙化并且使高达1m 2的ZnO层变形。用于处理在刚性或柔性载体上具有预结构化氧化锌层的基底的装置为此需要用蚀刻液处理基底的第一装置，用清洗液处理基底的第二装置，特定传送辊，用于将基板从第一装置传送到第二装置。

3. 发明申请

US20080274582A1 Method of Making Silicon Solar Cells Containing μC Silicon Layers 有权
标题翻译：制造含有μC硅层的硅太阳能电池的方法
公开(公告)号：US20080274582A1
公开(公告)日：2008-11-06
申请号：US10587131
申请日：2004-12-16
申请人： Tobias Repmann , Bernd Rech
发明人： Tobias Repmann , Bernd Rech
IPC分类号： H01L31/18
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/5096 , Y02E10/545 , Y02P70/521 , Y10S438/935
摘要： The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4 gas streams with values of between 0.01 and 3 sccm/cm2 are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2 gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.
摘要翻译：本发明涉及一种用于生产太阳能电池的方法，该方法包括借助于PECVD方法的包含微晶层的至少一个p-i-n层序列。所述方法的特征在于，将p-i-n层序列的所有层沉积在单室工艺中。电极间距为5至15毫米，气体通过淋浴头气体入口分布，保证了气体在衬底上的均匀分布。加入值在介于0.01和3sccm / cm 2之间的SiH 4 H 4气流以8至50hPa的过程压力加入。加热器温度设定在50和280℃之间，HF输出在0.2和2瓦特/平方厘米之间。 H 2气流的值为0.3至30sccm / cm 2，特别是0.3至10sccm / cm 2之间。

4. 发明授权

US07927907B2 Method of making silicon solar cells containing μC silicon layers 有权
标题翻译：制造含有μC硅层的硅太阳能电池的方法
公开(公告)号：US07927907B2
公开(公告)日：2011-04-19
申请号：US10587131
申请日：2004-12-16
申请人： Tobias Repmann , Bernd Rech
发明人： Tobias Repmann , Bernd Rech
IPC分类号： H01L21/00 , H01L21/20 , H01L31/00 , C23C16/00
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/5096 , Y02E10/545 , Y02P70/521 , Y10S438/935
摘要： The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4 gas streams with values of between 0.01 and 3 sccm/cm2 are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2 gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.
摘要翻译：本发明涉及一种用于生产太阳能电池的方法，该方法包括借助于PECVD方法的包含微晶层的至少一个p-i-n层序列。所述方法的特征在于，将p-i-n层序列的所有层沉积在单室工艺中。电极间距为5至15毫米，气体通过淋浴头气体入口分布，保证了气体在衬底上的均匀分布。加入值在0.01至3sccm / cm2之间的SiH 4气流，处理压力为8至50hPa。加热器温度设定在50〜280℃之间，HF输出为0.2〜2瓦特/ cm2。 H2气流的值为0.3至30sccm / cm2，特别是0.3至10sccm / cm2。

5. 发明授权

US08395043B2 Solar cell comprising neighboring electrically insulating passivation regions having high surface charges of opposing polarities and production method 有权
标题翻译：太阳能电池包括具有相反极性的高表面电荷的相邻电绝缘钝化区域和制造方法
公开(公告)号：US08395043B2
公开(公告)日：2013-03-12
申请号：US13375557
申请日：2010-06-01
申请人： Rolf Stangl , Bernd Rech
发明人： Rolf Stangl , Bernd Rech
IPC分类号： H01L31/0224
CPC分类号： H01L31/022441 , H01L31/022458 , H01L31/0682 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a photoactive, semiconductive absorber layer configured to generate excess charge carriers of opposed polarity by light incident on a front of the absorber layer during operation. The absorber layer is configured to separate and move, via at least one electric field formed in the absorber layer, the photogenerated excess charge carriers of opposed polarity over a minimal effective diffusion length Leff,min. The absorber layer has a thickness Lx of 0
摘要翻译：太阳能电池包括光活性半导体吸收层，其配置为在操作期间通过入射在吸收体层的前部上的光产生具有相反极性的多余电荷载体。吸收层被配置成通过在吸收层中形成的至少一个电场，以最小的有效扩散长度Leff，min分离和移动相反极性的光生的过量电荷载体。吸收层的厚度Lx为0

6. 发明申请

US20080163917A1 Transparent and Conductive Oxide Layer and Method of Making Same and Using it in a Thin-Film Solar Cell 审中-公开
标题翻译：透明导电氧化物层及其制造方法及其在薄膜太阳能电池中的应用
公开(公告)号：US20080163917A1
公开(公告)日：2008-07-10
申请号：US10587130
申请日：2005-01-18
申请人： Bernd Rech , Jurgen Hupkes , Oliver Kluth , Joachim Mueller
发明人： Bernd Rech , Jurgen Hupkes , Oliver Kluth , Joachim Mueller
IPC分类号： H01L31/042 , H01B1/00 , C23C14/32
CPC分类号： C23C14/0042 , C23C14/086 , H01L31/022483 , H01L31/1884 , Y02E10/50
摘要： The invention relates to a method for the production of a conductive and transparent zinc oxide layer on a substrate by reactive sputtering. The process comprises a hysteresis region. Said method is characterised by the following steps: A doped metal Zn target is used, whereby the doping content of the target is less than 2.3 at-%, the heater is adjusted for the substrate in such a manner that a substrate temperature is adjusted to above 200° C. A dynamic deposition rate is adjusted to more than 50 nm*m/min, which corresponds to a static deposition rate which is greater than 190 nm/min, and a stabilised working point is selected within the unstable process range which is between the turning point between a stable, metal and unstable process and between the inflection point of the stabilised process curve.
摘要翻译：本发明涉及通过反应溅射在衬底上生产导电和透明的氧化锌层的方法。该过程包括滞后区域。所述方法的特征在于以下步骤：使用掺杂的金属Zn靶，由此靶的掺杂含量小于2.3at％，对衬底调节加热器，使得衬底温度被调节到高于200℃。将动态沉积速率调节到大于50nm * m / min，这对应于大于190nm / min的静态沉积速率，并且在不稳定的工艺范围内选择稳定的工作点在稳定的金属和不稳定的过程之间以及稳定的过程曲线的拐点之间的转折点之间。

7. 发明申请

US20140213044A1 METHOD FOR PRODUCING PERIODIC CRYSTALLINE SILICON NANOSTRUCTURES 审中-公开
标题翻译：用于生产周期性结晶硅纳米结构的方法
公开(公告)号：US20140213044A1
公开(公告)日：2014-07-31
申请号：US14240034
申请日：2012-08-22
申请人： Christiane Becker , Tobias Sontheimer , Matthias Bockmeyer , Eveline Rudigier-Voigt , Bernd Rech
发明人： Christiane Becker , Tobias Sontheimer , Matthias Bockmeyer , Eveline Rudigier-Voigt , Bernd Rech
IPC分类号： H01L21/02 , H01L29/04
CPC分类号： H01L21/02667 , B82Y20/00 , B82Y40/00 , G02B1/005 , G02B6/1225 , G02B6/13 , H01L29/04
摘要： A method for producing periodic crystalline silicon nanostructures of large surface area by: generating a periodic structure having a lattice constant of between 100 nm and 2 μm on a substrate, the substrate used being a material which is stable at up to at least 570° C., and the structure being produced with periodically repeating shallow and steep areas/flanks, and, subsequently, depositing silicon by directed deposition onto the periodically structured substrate, with a thickness in the range from 0.2 to 3 times the lattice constant, or 40 nm to 6 μm, at a substrate temperature of up to 400° C., followed by thermally treating the deposited Si layer to effect solid-phase crystallization, at temperatures between 570° C. and 1400° C., over a few minutes up to several days, and optionally subsequently wet-chemically selective etching to remove resultant porous regions of the Si layer.
摘要翻译：一种制造具有大表面积的周期性结晶硅纳米结构的方法，其特征在于，在基板上产生晶格常数为100nm〜2μm的周期性结构，所使用的基板是在至少570℃以上稳定的材料并且随着周期性重复的浅和陡的区域/侧面而产生结构，并且随后通过定向沉积沉积到周期性结构的基底上的硅，其厚度在晶格常数的0.2至3倍的范围内，或40nm 至6μm，在高达400℃的衬底温度下，然后在570℃至1400℃的温度下，在几分钟内对沉积的Si层进行热处理以进行固相结晶，直到达到几天，并且任选地随后进行湿化学选择性蚀刻以除去Si层的所得多孔区域。

8. 发明申请

US20110126886A1 THIN-FILM SOLAR MODULE WHICH IS CONTACT-CONNECTED ON ONE SIDE AND HAS AN INTERNAL CONTACT LAYER 有权
标题翻译：在一侧接触连接的薄膜太阳能模块和内部接触层
公开(公告)号：US20110126886A1
公开(公告)日：2011-06-02
申请号：US13055969
申请日：2009-07-11
申请人： Rolf Stangl , Klaus Lips , Bernd Rech
发明人： Rolf Stangl , Klaus Lips , Bernd Rech
IPC分类号： H01L31/05 , H01L21/441 , H01L31/18
CPC分类号： H01L27/1423 , H01L31/022425 , H01L31/022433 , H01L31/046 , H01L31/0463 , Y02E10/50
摘要： A thin-film solar module contacted on one side includes a support layer, a photoactive absorber layer and at least one dopant layer deposited over a surface area of at least one side of the absorber layer so as to form a thin-film packet that is divided into thin-film solar cell areas by insulating separating trenches. The thin-film solar module includes first and second contact systems. The first contact system includes contacts connected by an outer contact layer. The second contact system consists of an inner contact layer covering a side of the solar cell areas that face away from the support layer so as to separately discharge excess charge carriers generated by incident light in the absorber layer. The second contact system includes structures that surround and electrically insulate the contacts, which extend through the inner contact layer from the outer contact layer. The first and second contact systems are electrically conductive and connected in series by series contacts in interconnection areas and electrically insulated from each other by an insulation layer outside of the interconnection areas.
摘要翻译：在一侧接触的薄膜太阳能模块包括支撑层，光敏吸收层和沉积在吸收层的至少一侧的表面区域上的至少一个掺杂剂层，以便形成薄膜包通过绝缘分隔沟槽将其分为薄膜太阳能电池区域。薄膜太阳能模块包括第一和第二接触系统。第一接触系统包括通过外部接触层连接的触点。第二接触系统包括覆盖太阳能电池区域的远离支撑层的一侧的内部接触层，以便分开地将由入射光产生的过量电荷载流子排出到吸收层中。第二接触系统包括围绕和电绝缘接触件的结构，其从外部接触层延伸穿过内部接触层。第一和第二接触系统是导电的并且通过互连区域中的串联触点串联连接并且通过互连区域外部的绝缘层彼此电绝缘。

9. 发明授权

US6044588A Window arrangement having a vibration generator to facilitate movement of a window pane 失效
标题翻译：具有振动发生器以便于窗玻璃的移动的窗口布置
公开(公告)号：US6044588A
公开(公告)日：2000-04-04
申请号：US223922
申请日：1998-12-31
申请人： Bernd Rech
发明人： Bernd Rech
IPC分类号： E05F11/52 , E05F15/689 , E05F15/08 , E05F15/20
CPC分类号： E05F11/525 , E05F15/689 , E05Y2900/55
摘要： A window pane is slidably driven in two guides by an electric motor. A piezoelectric vibrator vibrates the window pane to facilitate sliding movement of the window pane relative to the guides and a delay relay enables the vibrator to start operation before the motor is actuated.
摘要翻译：一个窗玻璃由电动马达驱动在两个导轨上。压电振动器振动窗玻璃以促进窗玻璃相对于引导件的滑动运动，并且延迟继电器使得振动器能够在马达启动之前开始运行。

10. 发明申请

US20060240649A1 Method for depositing silicon 失效
标题翻译：沉积硅的方法
公开(公告)号：US20060240649A1
公开(公告)日：2006-10-26
申请号：US10547118
申请日：2004-01-20
申请人： Tobias Roschek , Bernd Rech
发明人： Tobias Roschek , Bernd Rech
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/45557 , C23C16/505 , H01L21/02532 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.
摘要翻译：将硅沉积到衬底上的本发明方法首先涉及将反应性含硅气体和氢气引入等离子体室中，然后引入等离子体。在启动等离子体之后，只有反应性含硅气体或含有氢气的气体混合物以交替连续的方式供应到等离子体室，并且位于室内的气体混合物至少部分地从腔室中同时抽出。从一开始，均匀的微晶硅在氢的存在下沉积到衬底上。

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