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1. 发明申请

US20130061842A1 SINGLE-LAYERED WINDING OF SAWING WIRE WITH FIXEDLY BONDED ABRASIVE GRAIN FOR WIRE SAWS FOR SLICING WAFERS FROM A WORKPIECE 审中-公开
标题翻译：用于从工作台切割的波纹的用于电线的固定式磨粒的锯状线的单层卷绕
公开(公告)号：US20130061842A1
公开(公告)日：2013-03-14
申请号：US13594897
申请日：2012-08-27
申请人： Joachim Junge , Joerg Moser
发明人： Joachim Junge , Joerg Moser
IPC分类号： H01L21/304
CPC分类号： B28D5/045 , B23D57/0061
摘要： Wire spools used for multiple wire saws for slicing one or more wafers from a workpiece composed of semiconductor material using a wire web including parallel wire sections coated with bonded abrasive grain. The wire spools include a first wire spool configured as a dispensing spool and a second wire spool configured as a receiver spool. A sawing wire coated with bonded abrasive grain runs from the first wire spool via at least one deflection roll to the wire web and from the wire web via at least one deflection roll to the second wire spool. The sawing wire enters into guide grooves of the deflection rolls at an alignment angle α1 and exits the guide grooves of the deflection rolls at an alignment angle α2. The sawing wire has a single layer winding on each of the first and second wire spools.
摘要翻译：用于多个线锯的线芯，用于使用包括涂覆有粘合磨料颗粒的平行线段的线网将来自由半导体材料组成的工件切片一个或多个晶片。线轴包括构造为分配线轴的第一线轴和构造为接收器线轴的第二线轴。涂覆有粘结磨料颗粒的锯线从第一线卷轴经由至少一个偏转辊延伸到丝网，并且通过至少一个偏转辊到丝网卷到第二线卷轴。锯线以对准角α1进入偏转辊的引导槽，并以对准角α2离开偏转辊的引导槽。锯线在第一和第二线轴的每一个上具有单层缠绕。

2. 发明授权

US07767470B2 Semiconductor wafers with highly precise edge profile and method for producing them 失效
标题翻译：具有高精度边缘轮廓的半导体晶片及其制造方法
公开(公告)号：US07767470B2
公开(公告)日：2010-08-03
申请号：US11828441
申请日：2007-07-26
申请人： Peter Wagner , Hans Adolf Gerber , Anton Huber , Joerg Moser
发明人： Peter Wagner , Hans Adolf Gerber , Anton Huber , Joerg Moser
IPC分类号： H01L21/00
CPC分类号： H01L21/02021 , B24B9/065
摘要： A semiconductor wafer has a front side, a rear side and an edge which runs along the circumference of the semiconductor wafer and which connects the front side and the rear side of the edge having a defined edge profile, the edge profile being substantially constant over the entire circumference of the semiconductor wafer. A method for producing such a wafer allows for production of a multiplicity of semiconductor wafers, the edge profile being substantially constant from semiconductor wafer to semiconductor wafer.
摘要翻译：半导体晶片具有沿着半导体晶片的圆周延伸并且连接具有限定的边缘轮廓的边缘的前侧和后侧的前侧，后侧和边缘，所述边缘轮廓基本上在半导体晶片的整个周长。制造这种晶片的方法允许生产多个半导体晶片，该边缘轮廓从半导体晶片到半导体晶片基本上是恒定的。

3. 发明授权

US07704126B2 Method for producing a semiconductor wafer with profiled edge 失效
标题翻译：用于制造具有异型边缘的半导体晶片的方法
公开(公告)号：US07704126B2
公开(公告)日：2010-04-27
申请号：US11744230
申请日：2007-05-04
申请人： Joachim Mattes , Anton Huber , Joerg Moser
发明人： Joachim Mattes , Anton Huber , Joerg Moser
IPC分类号： B24B9/06
CPC分类号： H01L21/02021
摘要： Semiconductor wafers with profiled edges, are produced with decreased losses due to edge or other damage by separating a semiconductor wafer from a crystal; profiling the edge in a profile producing step wherein the edge is mechanically machined to a profile that is true to scale with respect to a predefined target profile; mechanically machining the wafer to reduce the a thickness of the semiconductor wafer; and machining the edge profile to acquire the target profile.
摘要翻译：具有成型边缘的半导体晶片由于通过将半导体晶片与晶体分离而由于边缘或其他损坏而减少的损耗产生; 在轮廓产生步骤中轮廓边缘，其中所述边缘被机械加工成相对于预定义的目标轮廓是真实的轮廓; 机械加工晶片以减小半导体晶片的厚度; 并加工边缘轮廓以获取目标轮廓。

4. 发明申请

US20080036040A1 Semiconductor Wafers With Highly Precise Edge Profile And Method For Producing Them 失效
标题翻译：具有高精度边缘轮廓的半导体晶片及其生产方法
公开(公告)号：US20080036040A1
公开(公告)日：2008-02-14
申请号：US11828441
申请日：2007-07-26
申请人： Peter Wagner , Hans Adolf Gerber , Anton Huber , Joerg Moser
发明人： Peter Wagner , Hans Adolf Gerber , Anton Huber , Joerg Moser
IPC分类号： H01L29/06 , H01L21/304
CPC分类号： H01L21/02021 , B24B9/065
摘要： A semiconductor wafer has a front side, a rear side and an edge which runs along the circumference of the semiconductor wafer and which connects the front side and the rear side of the edge having a defined edge profile, the edge profile being substantially constant over the entire circumference of the semiconductor wafer. A method for producing such a wafer allows for production of a multiplicity of semiconductor wafers, the edge profile being substantially constant from semiconductor wafer to semiconductor wafer.
摘要翻译：半导体晶片具有沿着半导体晶片的圆周延伸并且连接具有限定的边缘轮廓的边缘的前侧和后侧的前侧，后侧和边缘，所述边缘轮廓基本上在半导体晶片的整个周长。制造这种晶片的方法允许生产多个半导体晶片，该边缘轮廓从半导体晶片到半导体晶片基本上是恒定的。

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