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1. 发明授权

US07696004B2 Wafer level package fabrication method 有权
标题翻译：晶圆级封装制造方法
公开(公告)号：US07696004B2
公开(公告)日：2010-04-13
申请号：US12155317
申请日：2008-06-02
申请人： Jingli Yuan , Jae Cheon Doh , Si Joong Yang , In Goo Kang , Seung Wook Park
发明人： Jingli Yuan , Jae Cheon Doh , Si Joong Yang , In Goo Kang , Seung Wook Park
IPC分类号： H01L21/00
CPC分类号： H01L23/10 , H01L21/76898 , H01L2924/0002 , H03H9/105 , H03H9/1092 , H01L2924/00
摘要： Provided is a wafer level package fabrication method. The method includes providing a device substrate wafer including one or more devices on an upper surface thereof, and a bonding pad electrically connected to the device, providing a bonding seal surrounding the device along the bonding pad, bonding a cap substrate wafer to the device substrate wafer through the bonding seal, the cap substrate wafer having a via formed in a region corresponding to the bonding pad, forming an external terminal on the cap substrate wafer, the external terminal being electrically connected to the bonding pad, and cutting the cap substrate wafer and the device substrate wafer along a cutting line to individually separate a plurality of wafer level packages. The method is conducive to reducing product size for miniaturization, is capable of performing a bonding process without wafer deformation or damage, and increases freedom in wafer material selection.
摘要翻译：提供了晶片级封装制造方法。该方法包括提供在其上表面上包括一个或多个器件的器件衬底晶片和电连接到该器件的焊盘，提供围绕该焊盘的器件的接合密封，将盖衬底晶片接合到器件衬底晶片通过接合密封，所述盖基板晶片具有形成在与所述接合焊盘相对应的区域中的通孔，在所述盖基板晶片上形成外部端子，所述外部端子电连接到所述接合焊盘，以及切割所述盖基板晶片以及沿着切割线的装置基板晶片，以单独分离多个晶片级封装。该方法有利于减小产品尺寸以实现小型化，能够进行没有晶片变形或损坏的接合工艺，并增加晶片材料选择的自由度。

2. 发明申请

US20080299706A1 Wafer level package fabrication method 有权
标题翻译：晶圆级封装制造方法
公开(公告)号：US20080299706A1
公开(公告)日：2008-12-04
申请号：US12155317
申请日：2008-06-02
申请人： Jingli Yuan , Jae Cheon Doh , Si Joong Yang , In Goo Kang , Seung Wook Park
发明人： Jingli Yuan , Jae Cheon Doh , Si Joong Yang , In Goo Kang , Seung Wook Park
IPC分类号： H01L21/50
CPC分类号： H01L23/10 , H01L21/76898 , H01L2924/0002 , H03H9/105 , H03H9/1092 , H01L2924/00
摘要： Provided is a wafer level package fabrication method. The method includes providing a device substrate wafer including one or more devices on an upper surface thereof, and a bonding pad electrically connected to the device, providing a bonding seal surrounding the device along the bonding pad, bonding a cap substrate wafer to the device substrate wafer through the bonding seal, the cap substrate wafer having a via formed in a region corresponding to the bonding pad, forming an external terminal on the cap substrate wafer, the external terminal being electrically connected to the bonding pad, and cutting the cap substrate wafer and the device substrate wafer along a cutting line to individually separate a plurality of wafer level packages. The method is conducive to reducing product size for miniaturization, is capable of performing a bonding process without wafer deformation or damage, and increases freedom in wafer material selection.
摘要翻译：提供了晶片级封装制造方法。该方法包括提供在其上表面上包括一个或多个器件的器件衬底晶片和电连接到该器件的焊盘，提供围绕该焊盘的器件的接合密封，将盖衬底晶片接合到器件衬底晶片通过接合密封，所述盖基板晶片具有形成在与所述接合焊盘相对应的区域中的通孔，在所述盖基板晶片上形成外部端子，所述外部端子电连接到所述接合焊盘，以及切割所述盖基板晶片以及沿着切割线的装置基板晶片，以单独分离多个晶片级封装。该方法有利于减小产品尺寸以实现小型化，能够进行没有晶片变形或损坏的接合工艺，并增加晶片材料选择的自由度。

3. 发明授权

US07670878B2 Method for manufacturing semiconductor package 有权
标题翻译：制造半导体封装的方法
公开(公告)号：US07670878B2
公开(公告)日：2010-03-02
申请号：US12153378
申请日：2008-05-16
申请人： Jing Li Yuan , Jae Cheon Doh , Tae Hoon Kim , Si Joong Yang , Seung Wook Park
发明人： Jing Li Yuan , Jae Cheon Doh , Tae Hoon Kim , Si Joong Yang , Seung Wook Park
IPC分类号： H01L21/44
CPC分类号： H03H9/1092 , H01L23/10 , H01L24/14 , H01L24/17 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2224/0401 , H01L2224/0557 , H01L2224/13023 , H01L2224/131 , H01L2224/1319 , H01L2224/14051 , H01L2224/14505 , H01L2224/17515 , H01L2224/29011 , H01L2224/2919 , H01L2224/301 , H01L2224/73104 , H01L2224/81193 , H01L2224/81805 , H01L2224/81815 , H01L2224/81907 , H01L2224/83193 , H01L2224/83986 , H01L2224/9205 , H01L2224/9221 , H01L2224/94 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/16235 , H01L2924/19041 , H01L2924/00014 , H01L2924/01014 , H01L2924/00 , H01L2924/3512 , H01L2224/05552
摘要： Provided is a method for manufacturing a semiconductor package. In the method, a wafer for a cap substrate is provided. The wafer for the cap substrate includes a plurality of vias and via electrodes on a lower surface. A wafer for a device substrate is provided. The wafer for the device substrate includes a circuit unit and a connection electrode on an upper surface. The wafer for the cap substrate and the wafer for the device substrate are primarily bonded by a medium of a primary adhesive. A trench is formed to expose the upper surface of the wafer for the device substrate to an outside along an outer edge of the primary adhesive. A secondary bonding operation is performed by a medium of a secondary adhesive to electrically connect the via electrode and the connection electrode. The wafer for the device substrate is diced along a virtual cut line.
摘要翻译：提供一种半导体封装的制造方法。在该方法中，设置用于盖基板的晶片。用于盖基板的晶片在下表面上包括多个通孔和通孔电极。提供了用于器件衬底的晶片。用于器件衬底的晶片包括上表面上的电路单元和连接电极。用于盖衬底的晶片和用于器件衬底的晶片主要通过主要粘合剂的介质粘合。形成沟槽，以将器件基板的晶片的上表面沿初级粘合剂的外边缘暴露于外部。通过二次粘合剂的介质进行二次接合操作，以电连接通孔电极和连接电极。用于器件衬底的晶片沿虚拟切割线切割。

4. 发明申请

US20080286904A1 Method for manufacturing semiconductor package 有权
标题翻译：制造半导体封装的方法
公开(公告)号：US20080286904A1
公开(公告)日：2008-11-20
申请号：US12153378
申请日：2008-05-16
申请人： Jing Li Yuan , Jae Cheon Doh , Tae Hoon Kim , Si Joong Yang , Seung Wook Park
发明人： Jing Li Yuan , Jae Cheon Doh , Tae Hoon Kim , Si Joong Yang , Seung Wook Park
IPC分类号： H01L21/60
CPC分类号： H03H9/1092 , H01L23/10 , H01L24/14 , H01L24/17 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2224/0401 , H01L2224/0557 , H01L2224/13023 , H01L2224/131 , H01L2224/1319 , H01L2224/14051 , H01L2224/14505 , H01L2224/17515 , H01L2224/29011 , H01L2224/2919 , H01L2224/301 , H01L2224/73104 , H01L2224/81193 , H01L2224/81805 , H01L2224/81815 , H01L2224/81907 , H01L2224/83193 , H01L2224/83986 , H01L2224/9205 , H01L2224/9221 , H01L2224/94 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/16235 , H01L2924/19041 , H01L2924/00014 , H01L2924/01014 , H01L2924/00 , H01L2924/3512 , H01L2224/05552
摘要： Provided is a method for manufacturing a semiconductor package. In the method, a wafer for a cap substrate is provided. The wafer for the cap substrate includes a plurality of vias and via electrodes on a lower surface. A wafer for a device substrate is provided. The wafer for the device substrate includes a circuit unit and a connection electrode on an upper surface. The wafer for the cap substrate and the wafer for the device substrate are primarily bonded by a medium of a primary adhesive. A trench is formed to expose the upper surface of the wafer for the device substrate to an outside along an outer edge of the primary adhesive. A secondary bonding operation is performed by a medium of a secondary adhesive to electrically connect the via electrode and the connection electrode. The wafer for the device substrate is diced along a virtual cut line.
摘要翻译：提供一种半导体封装的制造方法。在该方法中，设置用于盖基板的晶片。用于盖基板的晶片在下表面上包括多个通孔和通孔电极。提供了用于器件衬底的晶片。用于器件衬底的晶片包括上表面上的电路单元和连接电极。用于盖衬底的晶片和用于器件衬底的晶片主要通过主要粘合剂的介质粘合。形成沟槽，以将器件基板的晶片的上表面沿初级粘合剂的外边缘暴露于外部。通过二次粘合剂的介质进行二次接合操作，以电连接通孔电极和连接电极。用于器件衬底的晶片沿虚拟切割线切割。

5. 发明申请

US20110012220A1 Wafer-level image sensor module, method of manufacturing the same and camera module 审中-公开
标题翻译：晶圆级图像传感器模块，其制造方法和相机模块
公开(公告)号：US20110012220A1
公开(公告)日：2011-01-20
申请号：US12923454
申请日：2010-09-22
申请人： Seung Wook Park , Jing Li Yuan , Ju Pyo Hong , Si Joong Yang
发明人： Seung Wook Park , Jing Li Yuan , Ju Pyo Hong , Si Joong Yang
IPC分类号： H01L31/0203
CPC分类号： H01L27/14618 , H01L27/14683 , H01L2224/02372 , H01L2224/05001 , H01L2224/05009 , H01L2224/05024 , H01L2224/05548 , H01L2224/13 , H01L2924/00014 , H01L2224/05599
摘要： A wafer-level image sensor module including: a wafer having an image sensor and a plurality of upper pads provided thereon, the wafer having an inclined surface on either side thereof; a transparent member installed above the top surface of the wafer so as to seal the image sensor; a plurality of lead portions having one ends connected to the respective upper pads, the lead portions being formed to extend to the bottom surface of the wafer along the inclined surface of the wafer; an encapsulation portion formed on the top surface of the wafer so as to be positioned outside the transparent member; and a plurality of external connection members that are electrically connected to the other ends of the respective lead portions
摘要翻译：一种晶片级图像传感器模块，包括：具有图像传感器和设置在其上的多个上焊盘的晶片，所述晶片在其两侧具有倾斜表面; 透明构件安装在晶片的顶表面上方，以密封图像传感器; 多个引线部分，其一端连接到相应的上焊盘，引线部分形成为沿着晶片的倾斜表面延伸到晶片的底表面; 形成在所述晶片的上表面上以便位于所述透明构件外部的封装部; 以及多个外部连接构件，其电连接到各个引线部分的另一端

6. 发明申请

US20090085134A1 Wafer-level image sensor module, method of manufacturing the same, and camera module 审中-公开
标题翻译：晶圆级图像传感器模块，其制造方法和相机模块
公开(公告)号：US20090085134A1
公开(公告)日：2009-04-02
申请号：US12007977
申请日：2008-01-17
申请人： Seung Wook Park , Jing Li Yuan , Ju Pyo Hong , Si Joong Yang
发明人： Seung Wook Park , Jing Li Yuan , Ju Pyo Hong , Si Joong Yang
IPC分类号： H01L31/0232 , H01L21/52
CPC分类号： H01L27/14618 , H01L27/14683 , H01L2224/02372 , H01L2224/05001 , H01L2224/05009 , H01L2224/05024 , H01L2224/05548 , H01L2224/13 , H01L2924/00014 , H01L2224/05599
摘要： Provided is a wafer-level image sensor module including a wafer; an image sensor mounted on the wafer; a transparent member installed above the top surface of the wafer so as to seal the image sensor; a plurality of vias formed in the wafer so as to be positioned outside the transparent member; a plurality of upper pads formed on the upper ends of the respective vias; an encapsulation portion formed on the top surface of the wafer so as to be positioned outside the transparent member; and a plurality of external connection members that are electrically connected to the lower ends of the respective vias.
摘要翻译：提供了一种晶片级图像传感器模块，其包括晶片; 安装在晶片上的图像传感器; 透明构件安装在晶片的顶表面上方，以密封图像传感器; 形成在所述晶片中以便位于所述透明构件外部的多个通孔; 形成在各个通路的上端的多个上焊盘; 形成在所述晶片的上表面上以便位于所述透明构件外部的封装部; 以及电连接到各个通孔的下端的多个外部连接构件。

7. 发明申请

US20090085204A1 Wafer-level package and method of manufacturing the same 审中-公开
标题翻译：晶圆级封装及其制造方法
公开(公告)号：US20090085204A1
公开(公告)日：2009-04-02
申请号：US12216630
申请日：2008-07-08
申请人： Seung Wook Park , Chun Choi , Ju Pyo Hong , Si Joong Yang , Dae Jun Kim
发明人： Seung Wook Park , Chun Choi , Ju Pyo Hong , Si Joong Yang , Dae Jun Kim
IPC分类号： H01L21/56 , H01L23/498
CPC分类号： H01L23/3114 , H01L21/56 , H01L23/315 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： Provided is a wafer-level package including a wafer-level semiconductor chip having a plurality of integrated circuits (ICs) and pads formed on the top surface thereof; a molding material of which the outer portion is supported by the top surface of the semiconductor chip such that a cavity is provided on the semiconductor chip; and a conducive member filled in a plurality of vias which are formed in arbitrary positions of the molding material so as to pass through the molding material, the conductive member being connected to the pads.
摘要翻译：提供了一种晶片级封装，其包括具有形成在其顶表面上的多个集成电路（IC）和焊盘的晶片级半导体芯片; 外部由半导体芯片的上表面支撑的成型材料，使得在半导体芯片上设置空腔; 以及填充有多个通孔的导电构件，其形成在模制材料的任意位置以便通过模制材料，导电构件连接到垫。

8. 发明授权

US08093705B2 Dual face package having resin insulating layer 失效
标题翻译：具有树脂绝缘层的双面包装
公开(公告)号：US08093705B2
公开(公告)日：2012-01-10
申请号：US12320286
申请日：2009-01-22
申请人： Seung Wook Park , Young Do Kweon , Jingli Yuan , Seon Hee Moon , Ju Pyo Hong , Jae Kwang Lee
发明人： Seung Wook Park , Young Do Kweon , Jingli Yuan , Seon Hee Moon , Ju Pyo Hong , Jae Kwang Lee
IPC分类号： H01L23/50 , H01L21/768
CPC分类号： H01L21/76898 , H01L21/481 , H01L23/3114 , H01L23/49827 , H01L2924/0002 , H01L2924/00
摘要： A dual face package includes a semiconductor substrate including a through-electrode connected to a die pad disposed on one side of the semiconductor substrate, and a lower redistribution layer disposed on another side thereof and connected to the through-electrode, an insulating layer including a post electrode connected to the through-electrode, and an upper redistribution layer disposed on one side thereof and connected to the post electrode, and an adhesive layer disposed on the one side of the semiconductor substrate so as to attach the insulating layer to the semiconductor substrate such that the through-electrode is connected to the post electrode.
摘要翻译：双面包装包括半导体衬底，其包括连接到设置在半导体衬底的一侧的管芯焊盘的通孔和设置在其另一侧并连接到通孔的下再分布层，绝缘层包括：连接到所述贯通电极的后电极以及设置在其一侧并连接到所述柱电极的上再分配层，以及设置在所述半导体衬底的一侧上以将所述绝缘层附着到所述半导体衬底的粘合层使得贯通电极连接到柱电极。

9. 发明申请

US20110129994A1 Method of manufacturing a dual face package 有权
标题翻译：制造双面包装的方法
公开(公告)号：US20110129994A1
公开(公告)日：2011-06-02
申请号：US12929614
申请日：2011-02-03
申请人： Seung Wook Park , Young Do Kweon , Jingli Yuan , Seon Hee Moon , Ju Pyo Hong , Jae Kwang Lee
发明人： Seung Wook Park , Young Do Kweon , Jingli Yuan , Seon Hee Moon , Ju Pyo Hong , Jae Kwang Lee
IPC分类号： H01L21/60
CPC分类号： H01L21/76898 , H01L21/481 , H01L23/3114 , H01L23/49827 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a dual face package, including: preparing an upper substrate composed of an insulating layer including a post via-hole; forming a filled electrode in a semiconductor substrate, the filled electrode being connected to a die pad; applying an adhesive layer on one side of the semiconductor substrate including the filled electrode, and attaching the upper substrate to the semiconductor substrate; cutting another side of the semiconductor substrate in a thickness direction, thus making the filled electrode into a through-electrode; and forming a post electrode in the post via-hole, forming an upper redistribution layer connected to the post electrode of the semiconductor substrate, and forming a lower redistribution layer connected to the through-electrode on the other side of the semiconductor substrate.
摘要翻译：一种双面包装的制造方法，包括：准备由包括柱状通孔的绝缘层构成的上基板; 在半导体衬底中形成填充电极，所述填充电极连接到管芯焊盘; 在包括填充电极的半导体衬底的一侧上施加粘合剂层，并将上衬底附接到半导体衬底; 在厚度方向切割半导体衬底的另一侧，从而使填充的电极成为通孔; 在柱状通孔中形成柱状电极，形成与半导体衬底的柱状电极连接的上部再分配层，在半导体衬底的另一侧形成与贯通电极连接的下部再分布层。

10. 发明申请

US20090166859A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090166859A1
公开(公告)日：2009-07-02
申请号：US12078049
申请日：2008-03-26
申请人： Jingli Yuan , Young Do Kweon , Jong Hwan Baek , Joon Seok Kang , Seung Wook Park , Jong Yun Lee
发明人： Jingli Yuan , Young Do Kweon , Jong Hwan Baek , Joon Seok Kang , Seung Wook Park , Jong Yun Lee
IPC分类号： H01L23/488 , H01L21/44
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/02313 , H01L2224/02351 , H01L2224/0236 , H01L2224/02377 , H01L2224/0332 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/05572 , H01L2224/0579 , H01L2224/058 , H01L2224/11849 , H01L2224/13022 , H01L2224/131 , H01L2924/00013 , H01L2924/0002 , H01L2924/01019 , H01L2924/01033 , H01L2924/01047 , H01L2924/014 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要： Provided is a semiconductor device including a wafer having an electrode pad; an insulating layer that is formed on the wafer and has an exposure hole formed in one side thereof, the exposure layer exposing the electrode pad, and a support post formed in the other side, the support post having a buffer groove; a redistribution layer that is formed on the top surface of the insulating layer and has one end connected to the electrode pad and the other end extending to the support post; an encapsulation layer that is formed on the redistribution layer and the insulating layer and exposes the redistribution layer formed on the support post; and a solder bump that is provided on the exposed portion of the redistribution layer.
摘要翻译：提供一种半导体器件，其包括具有电极焊盘的晶片; 绝缘层，其形成在所述晶片上并且具有形成在其一侧的曝光孔，所述曝光层暴露所述电极焊盘;以及支撑柱，形成在所述另一侧，所述支撑柱具有缓冲槽; 形成在所述绝缘层的顶表面上并且一端连接到所述电极焊盘并且另一端延伸到所述支撑柱的再分布层; 形成在再分配层和绝缘层上并且暴露形成在支撑柱上的再分布层的封装层; 以及设置在再分配层的暴露部分上的焊料凸块。

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