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1. 发明授权

US5959880A Low aspect ratio magnetoresistive tunneling junction 失效
标题翻译：低纵横比磁阻隧道结
公开(公告)号：US5959880A
公开(公告)日：1999-09-28
申请号：US993996
申请日：1997-12-18
申请人： Jing Shi , Theodore Zhu , Saied N. Tehrani , Eugene Chen , Mark Durlam
发明人： Jing Shi , Theodore Zhu , Saied N. Tehrani , Eugene Chen , Mark Durlam
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , G11C11/00
CPC分类号： G11C11/5607 , G11C11/15 , G11C11/16 , G11C2211/5615
摘要： A low aspect ratio magnetoresistive tunneling junction memory cell includes two layers of magnetoresistive material separated by electrically insulating material so as to form a magnetoresistive tunneling junction. An exchange interaction layer is sandwiched between one layer of the junction and a third layer of magnetoresistive material so as to pin the magnetic vector of one layer of the junction anti-parallel to a magnetic vector in the third layer so that magnetostatic interaction between the junction layers is canceled and the magnetic vector of the one layer is free to move in either of the two directions parallel to the polarization axis. Antiferromagnetic material is positioned adjacent the third layer so as to fix the magnetic vector in the third layer uni-directionally parallel to the polarization axis.
摘要翻译：低纵横比磁阻隧穿结存储单元包括由电绝缘材料分开的两层磁阻材料，以形成磁阻隧道结。交换相互作用层夹在一层结和第三层磁阻材料之间，以便将一层结的磁矢量与第三层中的磁矢量平行地平行，从而使连接点之间的静磁相互作用层被取消，并且一层的磁矢量在平行于偏振轴的两个方向中的任一方向上自由移动。反铁磁材料位于第三层附近，以将磁矢量固定在与偏振轴方向平行的第三层中。

2. 发明授权

US5757695A Mram with aligned magnetic vectors 失效
标题翻译：与对准的磁性矢量
公开(公告)号：US5757695A
公开(公告)日：1998-05-26
申请号：US795488
申请日：1997-02-05
申请人： Jing Shi , Theodore Zhu , Saied N. Tehrani
发明人： Jing Shi , Theodore Zhu , Saied N. Tehrani
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/10
CPC分类号： G11C11/5607 , G11C11/15 , G11C11/16 , G11C2211/5616
摘要： A multi-layer magnetic memory cell is provided, with magnetic vectors aligned along a length of the cell. To align the magnetic end vectors, an ellipsoidal shape is formed at the ends of the memory cell. Magnetic vectors aligned along the length prevent from forming high fields and magnetic poles at the discontinuity or ends of the layers. The memory cell with the ellipsoidal shape shows a constant magnetic resistance of the magnetic cell when a magnetic field is applied to the cell and attains a reduction of power consumption for the magnetic cell.
摘要翻译：提供了多层磁存储单元，其中磁矢量沿单元的长度排列。为了对准磁端向量，在存储单元的端部形成椭圆形状。沿着长度排列的磁矢量防止在层的不连续或端部处形成高场和磁极。具有椭圆形状的存储单元在磁场施加到电池并且降低磁性单元的功耗时显示出磁性单元的恒定的磁阻。

3. 发明授权

US6081445A Method to write/read MRAM arrays 失效
标题翻译：写入/读取MRAM阵列的方法
公开(公告)号：US6081445A
公开(公告)日：2000-06-27
申请号：US122722
申请日：1998-07-27
申请人： Jing Shi , Theodore Zhu
发明人： Jing Shi , Theodore Zhu
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15 , G11C11/16
摘要： A method of writing/reading an array of magnetoresistive cells, with each cell in the array having associated therewith a first current line that generates an easy axis field and a second orthogonal current line that generates a hard axis field when current is applied thereto. The method includes initially applying a current to the second orthogonal current lines in a first direction that generates a hard axis field to switch end domains in all cells in the array to a fixed direction, and selecting a cell in the array for write/read using a half-select technique including supplying a half-select current to the first current line associated with the selected cell to generate a half-select easy axis field and, simultaneously, supplying a half-select current in the first direction to the second current line associated with the selected cell to generate a half-select hard axis field.
摘要翻译：写入/读取磁阻单元阵列的方法，阵列中的每个单元与其相关联，产生易于轴的场的第一电流线和当施加电流时产生硬轴场的第二正交电流线。该方法包括：首先在第一方向上向第二正交电流线施加电流，该第一方向产生硬轴场，以将阵列中的所有单元中的末端域切换到固定方向，并且使用半选择技术，包括向与所选择的单元相关联的第一电流线提供半选择电流以产生半选容易轴场，并且同时向第二电流线提供第一方向上的半选择电流与所选择的单元相关联以生成半轴硬轴字段。

4. 发明授权

US09632084B2 Anti-carbamylated protein antibodies and the risk for arthritis 有权
公开(公告)号：US09632084B2
公开(公告)日：2017-04-25
申请号：US13983374
申请日：2012-02-01
申请人： Leendert Adrianus Trouw , Reinaldus Everardus Maria Toes , Thomas Willem Johannes Huizinga , Petrus Antonius van Veelen , Anthony Cerami , Jing Shi
发明人： Leendert Adrianus Trouw , Reinaldus Everardus Maria Toes , Thomas Willem Johannes Huizinga , Petrus Antonius van Veelen , Anthony Cerami , Jing Shi
IPC分类号： G01N33/53 , G01N33/564 , G01N33/68
CPC分类号： G01N33/564 , G01N33/6854 , G01N2333/75 , G01N2440/00 , G01N2800/101 , G01N2800/102 , G01N2800/104 , G01N2800/105 , G01N2800/107 , G01N2800/50 , Y02A50/57
摘要： Antibodies against citrullinated protein antigens (ACPA) have shown their relevance for the diagnosis and possibly pathogenesis in arthritis. Described are means and methods for determining antibodies against homocitrulline-containing proteins or carbamylated proteins/peptides (anti-CarP) for the classification of individuals suffering from, or at risk of suffering from, arthritis.

5. 发明授权

US08648463B2 Assembly of multi-chip modules with proximity connectors using reflowable features 有权
标题翻译：使用可回流功能组装具有接近连接器的多芯片模块
公开(公告)号：US08648463B2
公开(公告)日：2014-02-11
申请号：US12781732
申请日：2010-05-17
申请人： Hiren D. Thacker , Jing Shi , John E. Cunningham , Ashok V. Krishnamoorthy
发明人： Hiren D. Thacker , Jing Shi , John E. Cunningham , Ashok V. Krishnamoorthy
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/02 , H01L23/34 , H01L21/00
CPC分类号： H01L23/13 , H01L23/48 , H01L23/49811 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L25/0652 , H01L25/50 , H01L2224/0401 , H01L2224/05557 , H01L2224/05558 , H01L2224/05571 , H01L2224/05655 , H01L2224/05671 , H01L2224/13147 , H01L2224/13155 , H01L2224/1319 , H01L2224/13541 , H01L2224/13561 , H01L2224/1357 , H01L2224/13578 , H01L2224/13611 , H01L2224/14051 , H01L2224/14505 , H01L2224/16147 , H01L2224/16225 , H01L2224/16227 , H01L2224/1703 , H01L2224/17517 , H01L2224/81141 , H01L2224/81211 , H01L2224/81815 , H01L2225/06531 , H01L2225/06593 , H01L2924/0002 , H01L2924/09701 , H01L2924/14 , H01L2924/15153 , H01L2924/15787 , H01L2924/00012 , H01L2924/00014 , H01L2924/01082 , H01L2924/01079 , H01L2924/01029 , H01L2924/01049 , H01L2924/206 , H01L2924/01028 , H01L2224/05552 , H01L2924/00
摘要： A multi-chip module (MCM) that includes at least two substrates, having facing surfaces, which are mechanically coupled by a set of coupling elements having a reflow characteristic, is described. One of the two substrates includes another set of coupling elements having another reflow characteristic, which is different than the reflow characteristic. These different reflow characteristics of the sets of coupling elements allow different temperature profiles to be used when bonding the two substrates to each other than when bonding the one of the two substrates to a carrier. For example, the temperature profiles may have different peak temperatures and/or different durations from one another. These reflow characteristics may facilitate low-cost, high-yield assembly and alignment of the substrates in the MCM, and may allow temperature-sensitive components to be included in the MCM.
摘要翻译：描述了包括具有面对表面的至少两个基板的多芯片模块（MCM），其通过一组具有回流特性的耦合元件机械耦合。两个基板中的一个包括另一组具有不同于回流特性的另外的回流特性的耦合元件。耦合元件组的这些不同的回流特性允许在将两个基板彼此接合时使用不同的温度曲线，而不是将两个基板中的一个接合到载体上。例如，温度分布可以具有不同的峰值温度和/或彼此不同的持续时间。这些回流特性可以促进MCM中的基板的低成本，高产量组装和对准，并且可以允许将温度敏感组件包括在MCM中。

6. 发明申请

US20120314563A1 DEVICE AND METHOD FOR CALIBRATING RECIPROCITY ERRORS 审中-公开
标题翻译：用于校准重复错误的装置和方法
公开(公告)号：US20120314563A1
公开(公告)日：2012-12-13
申请号：US13578307
申请日：2010-10-12
申请人： Qinglin Luo , Jing Shi
发明人： Qinglin Luo , Jing Shi
IPC分类号： H04J3/14
CPC分类号： H04B17/21 , H04B17/11 , H04B17/12 , H04B17/14 , H04L25/0212 , H04L25/0256
摘要： The present invention provides a method for reciprocity error calibration, comprising steps of: measuring downlink channel response HDL; measuring uplink channel response HUL; calculating one of a user equipment reciprocity error Em and a base station reciprocity error Eb utilizing least square LS criterion based on the HDL and HUL in accordance with a reciprocity model HDL=Em−1HULTEb; calculating the other one of the Em and Eb based on the calculated one of Em and Eb utilizing an algorithm adopting minimum mean square error MMSE criterion; and performing a reciprocity error calibration operation utilizing the calculated user equipment reciprocity error Em and base station reciprocity error Eb. There is further provided a reciprocity error calibration device for performing the reciprocity error calibration method. The reciprocity error calibration method and the reciprocity error calibration device according to the present invention may provide better reciprocity error calibration performance.
摘要翻译：本发明提供了一种用于互易误差校准的方法，包括以下步骤：测量下行链路信道响应HDL; 测量上行链路信道响应HUL; 使用基于HDL和HUL的最小二乘LS准则，根据互易模型HDL = Em-1HULTEb计算用户设备互易误差Em和基站互易误差Eb之一; 使用采用最小均方误差MMSE准则的算法，基于Em和Eb中的一个计算Em和Eb中的另一个; 以及利用所计算的用户设备互易误差Em和基站互易误差Eb来执行互易误差校准操作。还提供了一种用于执行互易误差校准方法的互易误差校准装置。根据本发明的互易误差校准方法和互易误差校准装置可以提供更好的互易误差校准性能。

7. 发明申请

US20110263860A1 PREPARATION METHODS OF 6-SUBSTITUTED AMINO-3-CYANOQUINOLINE COMPOUNDS AND THE INTERMEDIATES THEREOF 有权
标题翻译： 6-取代的氨基-3-氰基喹啉化合物的制备方法及其中间体
公开(公告)号：US20110263860A1
公开(公告)日：2011-10-27
申请号：US13125721
申请日：2009-10-23
申请人： Yongjun Mao , Jianfeng Li , Jin Zheng , Zheng Liu , Kai Xie , Haihong Li , Jing Shi , Ye Li , Jingshan Shen
发明人： Yongjun Mao , Jianfeng Li , Jin Zheng , Zheng Liu , Kai Xie , Haihong Li , Jing Shi , Ye Li , Jingshan Shen
IPC分类号： C07D215/20 , C07D215/38 , C07C69/78
CPC分类号： C07C229/64 , C07C237/30 , C07C255/30 , C07D215/56
摘要： The present invention relates to a method for preparing 6-substituted amino-3-cyanoquinoline compounds (compound A for short) and the intermediates thereof, more particularly, to a compound of the following formula (I), the preparation method thereof, the intermediates thereof and use thereof for preparing the compound A. The compound of the formula (I) is cyclized in the presence of an alkali to give a compound of formula A, wherein W is OH; or the compound of the formula (I) is cyclized in the presence of an alkali, and then chlorinated to give a compound of the formula A, wherein W is Cl. Compared with the known methods in the literature, the method for preparing the compound A from the compound of formula (I) according to the present invention can avoid using high-temperature condition and high boiling point solvents, and is safe and environment-friendly, mild in reaction condition, easy in operation with a high yield and high product purity.
摘要翻译：本发明涉及一种制备6-取代氨基-3-氰基喹啉化合物（简称为化合物A）的方法及其中间体，更具体地涉及下式（I）的化合物，其制备方法，中间体及其用于制备化合物A的用途。式（I）化合物在碱存在下环化，得到式A化合物，其中W为OH; 或式（I）化合物在碱的存在下环化，然后氯化，得到式A化合物，其中W为Cl。与文献中已知的方法相比，本发明的式（I）化合物制备化合物A的方法可以避免使用高温条件和高沸点溶剂，且安全环保，反应条件温和，易于操作，产率高，产品纯度高。

8. 发明授权

US06205052B1 Magnetic element with improved field response and fabricating method thereof 有权
标题翻译：具有改善的场响应的磁性元件及其制造方法
公开(公告)号：US06205052B1
公开(公告)日：2001-03-20
申请号：US09422447
申请日：1999-10-21
申请人： Jon Slaughter , Jing Shi , Eugene Chen , Saied Tehrani
发明人： Jon Slaughter , Jing Shi , Eugene Chen , Saied Tehrani
IPC分类号： G11C1115
CPC分类号： H01L43/08 , B82Y25/00 , H01F10/324 , H01F10/3254 , H01F10/3268
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26). A second electrode (18) is included and comprises a free ferromagnetic layer (28). A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16). At least one additional layer (20 & 22) is provided between the base metal layer (13) and the spacer layer (16). The base metal layer (13) or at least one of the layers positioned between the base metal layer (13) and the spacer layer (16) having an x-ray amorphous structure such that a reduced topological coupling strength between the free ferromagnetic layer (28) and the fixed ferromagnetic layer (26) is achieved.
摘要翻译：一种用于磁性元件的改进和新颖的器件和制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。第一电极（14）包括固定的铁磁层（26）。包括第二电极（18）并且包括自由铁磁层（28）。间隔层（16）位于固定铁磁层（26）和自由铁磁（28）层间隔层（16）之间。至少一个附加层（20和22）设置在基底金属层（13）和间隔层（16）之间。基底金属层（13）或位于基底金属层（13）和间隔层（16）之间的层中的至少一层具有x射线非晶结构，使得游离铁磁层（ 28）和固定铁磁层（26）。

9. 发明授权

US09012279B2 SiGe HBT and method of manufacturing the same 有权
标题翻译： SiGe HBT及其制造方法
公开(公告)号：US09012279B2
公开(公告)日：2015-04-21
申请号：US13613236
申请日：2012-09-13
申请人： Donghua Liu , Wenting Duan , Wensheng Qian , Jun Hu , Jing Shi
发明人： Donghua Liu , Wenting Duan , Wensheng Qian , Jun Hu , Jing Shi
IPC分类号： H01L21/8238 , H01L29/66 , H01L29/737 , H01L29/08
CPC分类号： H01L29/66242 , H01L29/0821 , H01L29/7371
摘要： A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed.
摘要翻译：公开了一种SiGe HBT，其包括：硅衬底; 形成在硅衬底中的浅沟槽场氧化物; 形成在每个浅沟槽场氧化物的底部的伪掩埋层; 形成在所述硅衬底的表面下方的集电极区域，所述集电极区域夹在所述浅沟槽场氧化物之间和所述伪埋层之间; 形成在每个浅沟槽场氧化物上方的多晶硅栅极，其厚度大于150nm; 多晶硅栅极和集电极区域上的基极区域; 发射极区隔离氧化物; 并且发射极区域上的发射极区域隔离氧化物和基极区域的一部分。多晶硅栅极通过CMOS工艺中的MOSFET的栅极多晶硅工艺形成。还公开了制造SiGe HBT的方法。

10. 发明授权

US08315065B2 Self-locking features in a multi-chip module 有权
标题翻译：多芯片模块中的自锁功能
公开(公告)号：US08315065B2
公开(公告)日：2012-11-20
申请号：US12568017
申请日：2009-09-28
申请人： Jing Shi , Hiren D. Thacker , Ashok V. Krishnamoorthy
发明人： Jing Shi , Hiren D. Thacker , Ashok V. Krishnamoorthy
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H05K3/303 , H01L23/13 , H01L23/49811 , H01L23/49838 , H01L2924/0002 , H05K3/325 , H05K2201/0311 , H05K2201/09036 , H05K2201/1059 , H05K2201/209 , H05K2203/167 , Y02P70/613 , Y10T29/49126 , H01L2924/00
摘要： A multi-chip module (MCM) is described. This MCM includes at least two substrates that are remateably mechanically coupled by positive and negative features on facing surfaces of the substrates. These positive and negative features may mate and self-lock with each other. For example, the positive features on one of the surfaces may include pairs of counterposed micro-springs, and the negative features may include pits or grooves on the other surface. When the substrates are mechanically coupled, a given pair of positive features may provide a force in a plane of the other surface. Furthermore, by compressing the MCM so that the surfaces of the substrates are pushed toward each other, the mechanical coupling may be released.
摘要翻译：描述了多芯片模块（MCM）。该MCM包括至少两个基板，其通过在基板的相对表面上的正和负特征可重新机械耦合。这些积极和消极的特征可以彼此交配和自锁。例如，其中一个表面上的阳性特征可以包括成对的相对的微弹簧，并且负特征可以包括在另一个表面上的凹坑或凹槽。当基板机械耦合时，给定的一对正特征可以在另一表面的平面中提供力。此外，通过压缩MCM使得基板的表面彼此推动，可以释放机械联接。

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