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1. 发明申请

US20130092958A1 NORMALLY-OFF III-NITRIDE METAL-2DEG TUNNEL JUNCTION FIELD-EFFECT TRANSISTORS 有权
标题翻译：正常关闭III-NITRIDE金属2DEG隧道连接场效应晶体管
公开(公告)号：US20130092958A1
公开(公告)日：2013-04-18
申请号：US13699296
申请日：2010-09-08
申请人： Jing Chen , Li Yuan , Hongwei Chen , Chunhua Zhou
发明人： Jing Chen , Li Yuan , Hongwei Chen , Chunhua Zhou
IPC分类号： H01L29/778 , H01L29/20 , H01L29/16
CPC分类号： H01L29/1608 , H01L29/2003 , H01L29/402 , H01L29/7781 , H01L29/7786 , H01L29/7788 , H01L29/872 , H01L29/88 , H01L2224/06181 , H01L2924/12032 , H01L2924/13062 , H01L2924/00
摘要： Structures, devices and methods are provided for creating heterojunction AlGaN/GaN metal two-dimensional electron gas (2DEG) tunnel-junction field-effect transistors (TJ-FET). In one aspect, metal-2DEG Schottky tunnel junctions can be employed in group III-Nitride field-effect devices that enable normally-off operation, large breakdown voltage, low leakage current, and high on/off current ratio. As a further advantage, AlGaN/GaN metal-2DEG TJ-FETs are disclosed that can be fabricated in a lateral configuration and/or a vertical configuration. Further non-limiting embodiments are provided that illustrate the advantages and flexibility of the disclosed structures.
摘要翻译：提供了用于产生异质结AlGaN / GaN金属二维电子气（2DEG）隧道结场效应晶体管（TJ-FET）的结构，器件和方法。在一方面，金属2DEG肖特基隧道结可以用于能够进行常关断操作，大的击穿电压，低漏电流和高导通/截止电流比的III-N型氮化物场效应器件中。作为另外的优点，公开了可以以横向配置和/或垂直配置制造的AlGaN / GaN金属2DEG TJ-FET。提供了另外的非限制性实施例，其示出了所公开的结构的优点和灵活性。

2. 发明授权

US08809987B2 Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors 有权
标题翻译：常规III族氮化物金属 - 2DEG隧道结场效应晶体管
公开(公告)号：US08809987B2
公开(公告)日：2014-08-19
申请号：US13699296
申请日：2010-09-08
申请人： Jing Chen , Li Yuan , Hongwei Chen , Chunhua Zhou
发明人： Jing Chen , Li Yuan , Hongwei Chen , Chunhua Zhou
IPC分类号： H01L29/47 , H01L21/28 , H01L29/20 , H01L29/872
CPC分类号： H01L29/1608 , H01L29/2003 , H01L29/402 , H01L29/7781 , H01L29/7786 , H01L29/7788 , H01L29/872 , H01L29/88 , H01L2224/06181 , H01L2924/12032 , H01L2924/13062 , H01L2924/00
摘要： Structures, devices and methods are provided for creating heterojunction AlGaN/GaN metal two-dimensional electron gas (2DEG) tunnel-junction field-effect transistors (TJ-FET). In one aspect, metal-2DEG Schottky tunnel junctions can be employed in group III-Nitride field-effect devices that enable normally-off operation, large breakdown voltage, low leakage current, and high on/off current ratio. As a further advantage, AlGaN/GaN metal-2DEG TJ-FETs are disclosed that can be fabricated in a lateral configuration and/or a vertical configuration. Further non-limiting embodiments are provided that illustrate the advantages and flexibility of the disclosed structures.
摘要翻译：提供了用于产生异质结AlGaN / GaN金属二维电子气（2DEG）隧道结场效应晶体管（TJ-FET）的结构，器件和方法。在一方面，金属2DEG肖特基隧道结可以用于能够进行常关断操作，大的击穿电压，低漏电流和高导通/截止电流比的III-N型氮化物场效应器件中。作为另外的优点，公开了可以以横向配置和/或垂直配置制造的AlGaN / GaN金属2DEG TJ-FET。提供了另外的非限制性实施例，其示出了所公开的结构的优点和灵活性。

3. 外观设计

USD1040461S1 Electric mop 有权
公开(公告)号：USD1040461S1
公开(公告)日：2024-08-27
申请号：US29929653
申请日：2024-02-23
申请人： Hongwei Chen
设计人： Hongwei Chen
摘要： FIG. 1 is a front elevation view of an electric mop showing the new design;
FIG. 2 is a back elevation view thereof;
FIG. 3 is a left-side view thereof;
FIG. 4 is a right-side view thereof;
FIG. 5 is a top plan view thereof;
FIG. 6 is a bottom plan view thereof;
FIG. 7 is a perspective view thereof;
FIG. 8 is another perspective view thereof; and,
FIG. 9 is an enlarged view of the encircled portion in FIG. 7.
The broken lines depict portions of the electric mop that form no part of the claimed design.
The dash-dot lines in FIG. 7 and FIG. 9 illustrate the enlarged view indicators and form no part of the claimed design.

4. 外观设计

USD905928S1 Lingerie 有权
公开(公告)号：USD905928S1
公开(公告)日：2020-12-29
申请号：US29702761
申请日：2019-08-22
申请人： Hongwei Chen
设计人： Hongwei Chen
摘要： FIG. 1 is a perspective view of a lingerie showing my new design;
FIG. 2 is a front elevation view thereof;
FIG. 3 is a rear elevation view thereof;
FIG. 4 is a left side elevation view thereof;
FIG. 5 is a right side elevation view thereof;
FIG. 6 is a top plan view thereof, shown enlarged in scale; and,
FIG. 7 is a bottom plan view thereof, shown enlarged in scale.

5. 发明申请

US20110068890A1 NTC THIN FILM THERMAL RESISTOR AND A METHOD OF PRODUCING IT 审中-公开
标题翻译： NTC薄膜热电阻及其生产方法
公开(公告)号：US20110068890A1
公开(公告)日：2011-03-24
申请号：US12919169
申请日：2008-12-05
申请人： Chuanren Yang , Hongwei Chen , Jihua Zhang , Lijun Yang
发明人： Chuanren Yang , Hongwei Chen , Jihua Zhang , Lijun Yang
IPC分类号： H01C7/04 , H01C7/02
CPC分类号： H01C1/1413 , H01C1/14 , H01C7/041 , H01C7/043 , Y10T29/49085
摘要： This invention relates to a method for thin film device. The method for manufacturing a thin film negative temperature coefficient thermistor is disclosed. It includes selecting a substrate, a temperature-sensitive layer, inner electrodes, a protective layer and end electrodes. The temperature-sensitive layer is an NTC thin film, the inner electrodes have a comb-shaped structure. The resistance value of the present invention can be regulated by changing material composition and the width, gap, length of comb-shaped electrodes, which are not influenced by the error of the thermistor physical size. In present invention, a high temperature glaze is engaged to smooth the surface of cheaper ceramic substrates. This process reduces the manufacturing cost, improves the structure, enhances the reliability and the yield and thus expands the application scope of the NTC thin film thermistor chips. The invention has an industrial practicability.
摘要翻译：本发明涉及一种薄膜器件的方法。公开了薄膜负温度系数热敏电阻的制造方法。其包括选择基板，感温层，内电极，保护层和端电极。温度敏感层是NTC薄膜，内部电极具有梳状结构。可以通过改变不受热敏电阻物理尺寸的误差影响的梳状电极的材料组成和宽度，间隙，长度来调节本发明的电阻值。在本发明中，高温釉料被接合以使廉价陶瓷基板的表面光滑。该工艺降低了制造成本，改善了结构，提高了可靠性和产量，从而扩大了NTC薄膜热敏电阻芯片的应用范围。本发明具有工业实用性。

6. 外观设计

USD1032002S1 Facial steamer 有权
公开(公告)号：USD1032002S1
公开(公告)日：2024-06-18
申请号：US29924939
申请日：2024-01-22
申请人： Hongwei Chen
设计人： Hongwei Chen
摘要： FIG. 1 is a front, top perspective view of a facial steamer, showing my new design;
FIG. 2 is a rear, bottom perspective view thereof;
FIG. 3 is a front elevation view thereof;
FIG. 4 is a rear elevation view thereof;
FIG. 5 is a left side elevation view thereof;
FIG. 6 is a right side elevation view thereof;
FIG. 7 is an enlarged top plan view thereof;
FIG. 8 is an enlarged bottom plan view thereof;
FIG. 9 is an enlarged view of detail “9” identified in FIG. 1;
FIG. 10 is an enlarged view of detail “10” identified in FIG. 1;
FIG. 11 is an enlarged view of detail “11” identified in FIG. 1;
FIG. 12 is an enlarged view of detail “12” identified in FIG. 2;
FIG. 13 is an enlarged view of detail “13” identified in FIG. 2; and,
FIG. 14 is an enlarged view of detail “14” identified in FIG. 2.
The dashed broken lines in the figures illustrate portions of the facial steamer that form no part of the claimed design. The dash dot dash broken lines in FIGS. 1, 2, 9, 10, 11, 12, 13 and 14 are for the purpose of illustrating the enlarged view indicators and form no part of the claimed design.

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