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1. 发明授权

US07279863B2 Method and apparatus for detecting excitation position of SRM by comparison of detected current 失效
标题翻译：通过比较检测电流来检测SRM的激励位置的方法和装置
公开(公告)号：US07279863B2
公开(公告)日：2007-10-09
申请号：US11334121
申请日：2006-01-17
申请人： Jin-Woo Ahn , Dong-Hee Lee , Tae-Hyoung Kim
发明人： Jin-Woo Ahn , Dong-Hee Lee , Tae-Hyoung Kim
IPC分类号： H02P1/46
CPC分类号： H02P6/20 , H02P6/185
摘要： Disclosed is a method and apparatus for detecting an excitation position of an SRM by comparison of detected currents. The method includes detecting a current by applying a first test voltage to each phase of the SRM, detecting a current by applying a second test voltage to each phase, determining an operation state of the SRM based on a deviation between the currents detected in any one of the phases, determining the operation state of the SRM as a rotation state if the deviation value exceeds a predetermined value, and applying a third test voltage to a phase excited just prior to a current excited phase to detect the current and turning on a phase to be next excited if the detected current value is more than a first reference value, and turning off the phase excited just prior to the presently excited phase if the detected current value is more than a second reference value. The phase excitation position is accurately detected according to the rotating speed without using a position sensor.
摘要翻译：公开了一种通过比较检测电流来检测SRM的激励位置的方法和装置。该方法包括通过对SRM的每个相位施加第一测试电压来检测电流，通过对每个相位施加第二测试电压来检测电流，基于在任何一个中检测到的电流之间的偏差来确定SRM的操作状态如果所述偏差值超过预定值，则将所述SRM的运行状态确定为旋转状态，以及将第三测试电压施加到刚好在当前激励相位之前激发的相位，以检测所述电流并打开相位如果检测到的电流值大于第一参考值，则接下来激发，并且如果检测到的电流值大于第二参考值，则关闭刚好在当前激励阶段之前激发的相位。在不使用位置传感器的情况下，根据转速精确地检测相位激励位置。

2. 发明申请

US20070075671A1 Method and apparatus for detecting excitation position of SRM by comparsion of detected current 失效
标题翻译：通过检测电流的比较来检测SRM的激励位置的方法和装置
公开(公告)号：US20070075671A1
公开(公告)日：2007-04-05
申请号：US11334121
申请日：2006-01-17
申请人： Jin-Woo Ahn , Dong-Hee Lee , Tae-Hyoung Kim
发明人： Jin-Woo Ahn , Dong-Hee Lee , Tae-Hyoung Kim
IPC分类号： H02P1/46
CPC分类号： H02P6/20 , H02P6/185
摘要： Disclosed is a method and apparatus for detecting an excitation position of an SRM by comparison of detected currents. The method includes detecting a current by applying a first test voltage to each phase of the SRM, detecting a current by applying a second test voltage to each phase, determining an operation state of the SRM based on a deviation between the currents detected in any one of the phases, determining the operation state of the SRM as a rotation state if the deviation value exceeds a predetermined value, and applying a third test voltage to a phase excited just prior to a current excited phase to detect the current and turning on a phase to be next excited if the detected current value is more than a first reference value, and turning off the phase excited just prior to the presently excited phase if the detected current value is more than a second reference value. The phase excitation position is accurately detected according to the rotating speed without using a position sensor.
摘要翻译：公开了一种通过比较检测电流来检测SRM的激励位置的方法和装置。该方法包括通过对SRM的每个相位施加第一测试电压来检测电流，通过对每个相位施加第二测试电压来检测电流，基于在任何一个中检测到的电流之间的偏差来确定SRM的操作状态如果所述偏差值超过预定值，则将所述SRM的运行状态确定为旋转状态，以及将第三测试电压施加到刚好在当前激励相位之前激发的相位，以检测所述电流并打开相位如果检测到的电流值大于第一参考值，则接下来激发，并且如果检测到的电流值大于第二参考值，则关闭刚好在当前激励阶段之前激发的相位。在不使用位置传感器的情况下，根据转速精确地检测相位激励位置。

3. 发明授权

US08378617B2 Method of controlling current of high-speed switched reluctance motor 失效
标题翻译：控制高速开关磁阻电机电流的方法
公开(公告)号：US08378617B2
公开(公告)日：2013-02-19
申请号：US13024148
申请日：2011-02-09
申请人： Jin-Woo Ahn , Dong-Hee Lee
发明人： Jin-Woo Ahn , Dong-Hee Lee
IPC分类号： H02P1/46
CPC分类号： H02P25/02
摘要： Disclosed herein is a method of controlling the current of a high-speed Switched Reluctance Motor (SRM) using an inverter circuit including a first switching element, a second switching element, a first diode, a second diode and a reactor, wherein the first switching element and the first diode, the second diode and the second switching element are connected to a bridge circuit, and one end of the reactor is connected to the junction of the first switching element and the first diode, and the remaining end of the reactor is connected to the junction of the second diode and the second switching element; and excitation mode, free-wheeling mode-1, the excitation mode, and free-wheeling mode-2 are sequentially performed in a unit period T, and, when the control is terminated, demagnetization is performed.
摘要翻译：这里公开了使用包括第一开关元件，第二开关元件，第一二极管，第二二极管和电抗器的逆变器电路来控制高速开关磁阻电动机（SRM）的电流的方法，其中第一开关元件和第一二极管，第二二极管和第二开关元件连接到桥式电路，并且电抗器的一端连接到第一开关元件和第一二极管的接点，反应器的剩余端连接到第二二极管和第二开关元件的结; 励磁模式，续流模式-1，励磁模式和续流模式-2在单位周期T中顺序进行，并且当控制终止时，执行退磁。

4. 发明授权

US08441223B2 Torque control method for high-speed switched reluctance motor 有权
标题翻译：高速开关磁阻电机的转矩控制方法
公开(公告)号：US08441223B2
公开(公告)日：2013-05-14
申请号：US13024127
申请日：2011-02-09
申请人： Jin-Woo Ahn , Dong-Hee Lee
发明人： Jin-Woo Ahn , Dong-Hee Lee
IPC分类号： H02P1/46
CPC分类号： H02P23/0086 , H02P25/098 , Y02P80/116
摘要： Disclosed herein is a torque control method for a high-speed Switched Reluctance Motor (SRM), which controls a torque in the high-speed operation of a 2-phase SRM. In the torque control method for a high-speed SRM, a positive torque (T*mA) of an active phase (A phase) of the two phases of the SRM is compensated for based on a negative torque attributable to an inactive phase (B phase) of two phases during a compensation control enable interval (ENA) ranging from a time point at which the active phase (A phase) is turned on to a time point at which tail current of the inactive phase (B phase) remains. Accordingly, the present invention can remarkably reduce a torque ripple occurring in high-speed operation mode in consideration of the influence of a negative torque attributable to tail current.
摘要翻译：这里公开了用于控制两相SRM的高速运转中的转矩的高速开关磁阻电动机（SRM）的转矩控制方法。在高速SRM的转矩控制方法中，SRM的两相的有效相（A相）的正转矩（T * mA）根据归因于无效相（B 在从有源相位（A相）接通的时间点到停止阶段（B相）的尾部电流保持的时间点的补偿控制使能间隔（ENA）期间的两相的相位。因此，考虑到归因于尾部电流的负转矩的影响，本发明能够显着地降低在高速运转模式中发生的转矩脉动。

5. 发明申请

US20140190397A1 INGOT GROWING APPARATUS AND METHOD OF MANUFACTURING INGOT 有权
标题翻译： INGOT生长装置和制造方法
公开(公告)号：US20140190397A1
公开(公告)日：2014-07-10
申请号：US13821004
申请日：2012-08-10
申请人： Jin-Woo Ahn , Bong-Woo Kim , Il-Soo Choi , Do-Yeon Kim
发明人： Jin-Woo Ahn , Bong-Woo Kim , Il-Soo Choi , Do-Yeon Kim
IPC分类号： C30B15/04
CPC分类号： C30B15/04 , C30B15/32 , C30B29/06 , Y10T117/1032
摘要： Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.
摘要翻译：提供一种锭生长装置，其包括含有硅熔体的坩埚，拉拔从硅熔体生长的硅单晶锭的牵引装置和与拉动装置相邻设置的掺杂剂供给部，并且在生长期间供给掺杂剂锭。可以通过掺杂剂供给单元将颈部的掺杂浓度高于锭的浓度。因此，可以降低位错传播速度，并且可以缩短传播长度。

6. 发明申请

US20110309051A1 APPARATUS AND METHOD FOR WET TREATMENT OF AN OBJECT AND FLUID DIFFUSION PLATE AND BARREL USED THEREIN 审中-公开
标题翻译：用于湿处理对象和流体扩散板和使用的棒的装置和方法
公开(公告)号：US20110309051A1
公开(公告)日：2011-12-22
申请号：US13127406
申请日：2009-11-03
申请人： Eun-Suck Choi , Jae-Hwan Yi , Bong Woo Kim , Hwan-Su Yu , Jin-Woo Ahn
发明人： Eun-Suck Choi , Jae-Hwan Yi , Bong Woo Kim , Hwan-Su Yu , Jin-Woo Ahn
IPC分类号： C23F1/00 , C23F1/08 , B08B3/00
CPC分类号： H01L21/67057 , H01L21/67051 , H01L21/6708 , H01L21/67086
摘要： An apparatus for wet treatment of an object includes a treatment bath in which an object to be treated is received and treated; a plurality of object supporting rods rotatably installed in the treatment bath and having a plurality of slots formed in surfaces thereof to support an object so that the object stands in a direction perpendicular to a bottom surface of the treatment bath; and a rotating means connected to the object supporting rods to rotate the object in a circumferential direction by rotating the object supporting rods. Treatment fluid injecting holes for injecting a treatment fluid to the object and treatment fluid channels for supplying the treatment fluid to the treatment fluid injecting holes are formed in the object supporting rods. Thus, a dead zone in the treatment bath is removed and the treatment fluid may flow uniformly and smoothly, which improves treatment efficiency and treatment uniformity.
摘要翻译：用于对物体进行湿处理的设备包括：待处理物体被接收和处理的处理槽; 多个对象支撑杆，可旋转地安装在处理槽中，并且具有形成在其表面上的多个槽，以支撑物体，使得物体垂直于处理槽底面的方向; 以及连接到物体支撑杆的旋转装置，以通过旋转物体支撑杆来使物体在圆周方向上旋转。在物体支撑杆上形成有用于将处理流体注入到物体的处理流体注入孔和用于将处理流体供给到处理流体注入孔的处理流体通道。因此，处理槽中的死区被去除，处理流体可均匀流畅地流动，这提高了处理效率和处理均匀性。

7. 发明授权

US09469917B2 Dopant feeder of ignot growing apparatus 有权
标题翻译：无机生长装置的掺杂饲料
公开(公告)号：US09469917B2
公开(公告)日：2016-10-18
申请号：US13821004
申请日：2012-08-10
申请人： Jin-Woo Ahn , Bong-Woo Kim , II-Soo Choi , Do-Yeon Kim
发明人： Jin-Woo Ahn , Bong-Woo Kim , II-Soo Choi , Do-Yeon Kim
IPC分类号： C30B15/04 , C30B29/06 , C30B15/32
CPC分类号： C30B15/04 , C30B15/32 , C30B29/06 , Y10T117/1032
摘要： Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.
摘要翻译：提供一种锭生长装置，其包括含有硅熔体的坩埚，拉拔从硅熔体生长的硅单晶锭的牵引装置和与拉动装置相邻设置的掺杂剂供给部，并且在生长期间供给掺杂剂锭。可以通过掺杂剂供给单元将颈部的掺杂浓度高于锭的浓度。因此，可以降低位错传播速度，并且可以缩短传播长度。

8. 发明授权

US08821219B2 Wafer unloading system and wafer processing equipment including the same 有权
标题翻译：晶圆卸载系统和晶圆加工设备相同
公开(公告)号：US08821219B2
公开(公告)日：2014-09-02
申请号：US13008896
申请日：2011-01-18
申请人： Jin-Woo Ahn , Eun-Suck Choi , Bong-Woo Kim , Hwan-Su Yu , Jae-Hwan Yi
发明人： Jin-Woo Ahn , Eun-Suck Choi , Bong-Woo Kim , Hwan-Su Yu , Jae-Hwan Yi
IPC分类号： B24B7/17 , B24B37/34
CPC分类号： B24B37/345
摘要： A wafer unloading system and wafer processing equipment (system) including the same are disclosed. The wafer unloading system includes a fluid supply tube for supplying a fluid, a nozzle for injecting the supplied fluid, and an injection hole defined in a plate to allow the injected fluid to reach a space between a polishing pad and a wafer.
摘要翻译：公开了包括该晶片卸载系统和晶片加工设备（系统）的系统。晶片卸载系统包括用于供应流体的流体供应管，用于喷射供应流体的喷嘴和限定在板中的喷射孔，以允许注入的流体到达抛光垫和晶片之间的空间。

9. 发明申请

US20110177762A1 WAFER UNLOADING SYSTEM AND WAFER PROCESSING EQUIPMENT INCLUDING THE SAME 有权
标题翻译： WAFER卸载系统和WAFER加工设备包括它们
公开(公告)号：US20110177762A1
公开(公告)日：2011-07-21
申请号：US13008896
申请日：2011-01-18
申请人： Jin-Woo Ahn , Eun-Suck Choi , Bong-Woo Kim , Hwan-Su Yu , Jae-Hwan Yi
发明人： Jin-Woo Ahn , Eun-Suck Choi , Bong-Woo Kim , Hwan-Su Yu , Jae-Hwan Yi
IPC分类号： B24B41/06 , B24B7/00 , B65G51/01
CPC分类号： B24B37/345
摘要： A wafer unloading system and wafer processing equipment (system) including the same are disclosed. The wafer unloading system includes a fluid supply tube for supplying a fluid, a nozzle for injecting the supplied fluid, and an injection hole defined in a plate to allow the injected fluid to reach a space between a polishing pad and a wafer.
摘要翻译：公开了包括该晶片卸载系统和晶片加工设备（系统）的系统。晶片卸载系统包括用于供应流体的流体供应管，用于喷射供应流体的喷嘴和限定在板中的喷射孔，以允许注入的流体到达抛光垫和晶片之间的空间。

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