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1. 发明申请

US20070128839A1 Quantum dot laser diode and method of manufacturing the same 有权
标题翻译：量子点激光二极管及其制造方法
公开(公告)号：US20070128839A1
公开(公告)日：2007-06-07
申请号：US11607516
申请日：2006-12-01
申请人： Jin Soo Kim , Jin Hong Lee , Sung Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
摘要翻译：提供量子点激光二极管及其制造方法。制造量子点激光二极管的方法包括以下步骤：在衬底上形成包括多个光栅的光栅结构层; 在所述光栅结构层上形成第一晶格匹配层; 在所述第一晶格匹配层上形成至少一个具有至少一个量子点的量子点层; 在量子点层上形成第二晶格匹配层; 在第二晶格匹配层上形成包覆层; 以及在所述包覆层上形成欧姆接触层。因此，可以在不影响量子点的均匀性的情况下获得期望波长的高增益，从而可以提高激光二极管的特性。

2. 发明申请

US20100260223A1 Quantum dot laser diode and method of fabricating the same 审中-公开
标题翻译：量子点激光二极管及其制造方法
公开(公告)号：US20100260223A1
公开(公告)日：2010-10-14
申请号：US11633201
申请日：2006-12-04
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01S5/343 , H01L33/02
CPC分类号： H01S5/341 , B82Y20/00 , H01S5/3403 , H01S5/3412 , H01S5/34306 , H01S2304/00
摘要： A quantum dot laser diode and a method of fabricating the same are provided. The quantum dot laser diode includes: a first clad layer formed on an InP substrate; a first lattice-matched layer formed on the first clad layer; an active layer formed on the first lattice-matched layer, and including at least one quantum dot layer formed of an InAlAs quantum dot or an InGaPAs quantum dot which is grown by an alternate growth method; a second lattice-matched layer formed on the active layer; a second clad layer formed on the second lattice-matched layer, and an ohmic contact layer formed on the second clad layer.
摘要翻译：提供了一种量子点激光二极管及其制造方法。量子点激光二极管包括：形成在InP衬底上的第一覆层; 形成在第一覆盖层上的第一晶格匹配层; 形成在第一晶格匹配层上的活性层，并且包括由交替生长法生长的InAlAs量子点或InGaPAs量子点形成的至少一个量子点层; 形成在所述有源层上的第二晶格匹配层; 形成在第二晶格匹配层上的第二覆盖层和形成在第二覆盖层上的欧姆接触层。

3. 发明授权

US09006749B2 Quantum dot laser diode and method of manufacturing the same 有权
公开(公告)号：US09006749B2
公开(公告)日：2015-04-14
申请号：US12499902
申请日：2009-07-09
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01L27/15 , H01S5/12 , B82Y20/00 , H01S5/34 , H01S5/343
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.

4. 发明授权

US07575943B2 Quantum dot laser diode and method of manufacturing the same 有权
标题翻译：量子点激光二极管及其制造方法
公开(公告)号：US07575943B2
公开(公告)日：2009-08-18
申请号：US11607516
申请日：2006-12-01
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01L21/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
摘要翻译：提供量子点激光二极管及其制造方法。制造量子点激光二极管的方法包括以下步骤：在衬底上形成包括多个光栅的光栅结构层; 在所述光栅结构层上形成第一晶格匹配层; 在所述第一晶格匹配层上形成至少一个具有至少一个量子点的量子点层; 在量子点层上形成第二晶格匹配层; 在第二晶格匹配层上形成包覆层; 以及在所述包覆层上形成欧姆接触层。因此，可以在不影响量子点的均匀性的情况下获得期望波长的高增益，从而可以提高激光二极管的特性。

5. 发明申请

US20060222027A1 Method for forming quantum dots by alternate growth process 失效
标题翻译：通过交替生长过程形成量子点的方法
公开(公告)号：US20060222027A1
公开(公告)日：2006-10-05
申请号：US11272617
申请日：2005-11-14
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Byung Seok Choi , Ho Sang Kwack , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Byung Seok Choi , Ho Sang Kwack , Dae Kon Oh
IPC分类号： H01S5/00
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01S5/3403 , H01S5/3412 , H01S5/34306 , Y10S438/962
摘要： Provided is a method of forming quantum dots, including: forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate; and sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As or In(Ga, Al, P)As quantum dots.
摘要翻译：提供一种形成量子点的方法，包括：在InP衬底上形成缓冲层以与InP衬底晶格匹配; 并顺序交替地沉积In（Ga）As层和InAl（Ga）As或In（Ga，Al，As）P层，在缓冲层上彼此大大地晶格失配，以形成In（Ga，Al） As或In（Ga，Al，P）作为量子点。

6. 发明授权

US07749787B2 Method for forming quantum dots by alternate growth process 失效
标题翻译：通过交替生长过程形成量子点的方法
公开(公告)号：US07749787B2
公开(公告)日：2010-07-06
申请号：US11272617
申请日：2005-11-14
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Byung Seok Choi , Ho Sang Kwack , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Byung Seok Choi , Ho Sang Kwack , Dae Kon Oh
IPC分类号： H01L21/00
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01S5/3403 , H01S5/3412 , H01S5/34306 , Y10S438/962
摘要： Provided is a method of forming quantum dots, including: forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate; and sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As or In(Ga, Al, P)As quantum dots.
摘要翻译：提供一种形成量子点的方法，包括：在InP衬底上形成缓冲层以与InP衬底晶格匹配; 并顺序交替地沉积In（Ga）As层和InAl（Ga）As或In（Ga，Al，As）P层，在缓冲层上彼此大大地晶格失配，以形成In（Ga，Al） As或In（Ga，Al，P）作为量子点。

7. 发明申请

US20090296766A1 QUANTUM DOT LASER DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：量子激光二极管及其制造方法
公开(公告)号：US20090296766A1
公开(公告)日：2009-12-03
申请号：US12499902
申请日：2009-07-09
申请人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
发明人： Jin Soo Kim , Jin Hong Lee , Sung Ui Hong , Ho Sang Kwack , Byung Seok Choi , Dae Kon Oh
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
摘要翻译：提供量子点激光二极管及其制造方法。制造量子点激光二极管的方法包括以下步骤：在衬底上形成包括多个光栅的光栅结构层; 在所述光栅结构层上形成第一晶格匹配层; 在所述第一晶格匹配层上形成至少一个具有至少一个量子点的量子点层; 在量子点层上形成第二晶格匹配层; 在第二晶格匹配层上形成包覆层; 以及在所述包覆层上形成欧姆接触层。因此，可以在不影响量子点的均匀性的情况下获得期望波长的高增益，从而可以提高激光二极管的特性。

8. 再颁专利

USRE45071E1 Semiconductor laser diode and method of manufacturing the same 有权
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：USRE45071E1
公开(公告)日：2014-08-12
申请号：US13070906
申请日：2011-03-24
申请人： Sung Ui Hong , Jin Hong Lee , Jin Soo Kim , Ho Sang Kwack , Dae Kon Oh
发明人： Sung Ui Hong , Jin Hong Lee , Jin Soo Kim , Ho Sang Kwack , Dae Kon Oh
IPC分类号： H01S5/22
CPC分类号： B82Y10/00 , B82Y20/00
摘要： Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.
摘要翻译：提供半导体激光二极管及其制造方法。半导体激光二极管包括设置在基板上的下包层; 包括光波导层，有源层，上覆层和欧姆接触层的脊，其顺序地层叠在下包层上，并且具有预定的宽度，其通过对两者进行沟道蚀刻处理而获得山脊边; 设置在所述上下包层的表面上以控制所述脊的宽度的氧化物层; 布置在所述脊的左通道和右通道上的电介质层; 设置在所得结构的整个表面上以包围脊和电介质层的上电极层; 以及设置在所述基板的底面上的下电极层。该方法比制造半导体激光二极管的常规方法简单。此外，通过控制湿式氧化时间，可以自由地控制脊的宽度，并且可以自动形成欧姆接触层。

9. 发明申请

US20060120428A1 Distributed feedback (DFB) semiconductor laser and fabrication method thereof 审中-公开
标题翻译：分布式反馈（DFB）半导体激光器及其制造方法
公开(公告)号：US20060120428A1
公开(公告)日：2006-06-08
申请号：US11272611
申请日：2005-11-14
申请人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Ho Sang Kwack
发明人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Ho Sang Kwack
IPC分类号： H01S3/08
CPC分类号： H01S5/2231 , B82Y10/00 , B82Y20/00 , H01S5/0654 , H01S5/0655 , H01S5/12 , H01S5/1231 , H01S5/2205 , H01S5/2215 , H01S5/2232 , H01S5/3412 , H01S5/34313
摘要： The distributed feedback semiconductor laser includes: a lower clad layer formed on a substrate; a ridge including an active layer and an upper clad layer sequentially formed on the lower clad layer; and a grating formed at a sidewall or both sidewalls of the ridge including the active layer in a direction perpendicular to the active layer and a resonance axis so as to enable a single longitudinal mode oscillation. The grating has parallel grooves that are equally spaced at a period equal to an integer multiple of half of an oscillation wavelength λ (nλ/2, n=1, 2, 3 . . . ).
摘要翻译：分布式反馈半导体激光器包括：形成在基板上的下包层; 包括依次形成在下包层上的有源层和上包层的脊; 以及形成在脊的侧壁或两个侧壁处的光栅，包括有源层在垂直于有源层的方向和谐振轴上，以便能够进行单个纵向模式振荡。光栅具有在等于振荡波长λ（nλ/ 2，n = 1,2,3，...）的一半的整数倍的周期等间隔的平行凹槽。

10. 发明授权

US07508857B2 Semiconductor laser diode and method of manufacturing the same 有权
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US07508857B2
公开(公告)日：2009-03-24
申请号：US11265712
申请日：2005-11-02
申请人： Sung Ui Hong , Jin Hong Lee , Jin Soo Kim , Ho Sang Kwack , Dae Kon Oh
发明人： Sung Ui Hong , Jin Hong Lee , Jin Soo Kim , Ho Sang Kwack , Dae Kon Oh
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y10/00 , B82Y20/00 , H01S5/2215 , H01S5/2216 , H01S5/2275 , H01S5/3412 , H01S5/34306 , H01S5/34366
摘要： Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.
摘要翻译：提供半导体激光二极管及其制造方法。半导体激光二极管包括设置在基板上的下包层; 包括光波导层，有源层，上覆层和欧姆接触层的脊，其顺序地层叠在下包层上，并且具有预定的宽度，其通过对两者进行沟道蚀刻处理而获得山脊边; 设置在所述上下包层的表面上以控制所述脊的宽度的氧化物层; 布置在所述脊的左通道和右通道上的电介质层; 设置在所得结构的整个表面上以包围脊和电介质层的上电极层; 以及设置在所述基板的底面上的下电极层。该方法比制造半导体激光二极管的常规方法简单。此外，通过控制湿式氧化时间，可以自由地控制脊的宽度，并且可以自动形成欧姆接触层。

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