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1. 发明申请

US20090101970A1 Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090101970A1
公开(公告)日：2009-04-23
申请号：US12250989
申请日：2008-10-14
申请人： Jin Soo Kim , Chang Moon Lim
发明人： Jin Soo Kim , Chang Moon Lim
IPC分类号： H01L47/00 , H01L21/3205
CPC分类号： H01L29/66621 , H01L27/10855 , H01L27/10876 , H01L29/4236
摘要： A method for manufacturing a semiconductor device including a vertical cell transistor structure may include forming a vertical cell transistor structure over a semiconductor substrate of a cell region; forming an insulating film over the vertical cell transistor structure; planarizing the insulating film to expose a hard mask film disposed at a top portion of the vertical cell transistor structure; and forming a storage node contact by removing the hard mask film.
摘要翻译：制造包括垂直单元晶体管结构的半导体器件的方法可以包括在单元区域的半导体衬底上形成垂直单元晶体管结构; 在垂直单元晶体管结构上形成绝缘膜; 对绝缘膜进行平坦化以露出设置在垂直单元晶体管结构的顶部的硬掩模膜; 并通过去除硬掩模膜形成存储节点接触。

2. 发明授权

US07915113B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07915113B2
公开(公告)日：2011-03-29
申请号：US12250989
申请日：2008-10-14
申请人： Jin Soo Kim , Chang Moon Lim
发明人： Jin Soo Kim , Chang Moon Lim
IPC分类号： H01L21/8238
CPC分类号： H01L29/66621 , H01L27/10855 , H01L27/10876 , H01L29/4236
摘要： A method for manufacturing a semiconductor device including a vertical cell transistor structure may include forming a vertical cell transistor structure over a semiconductor substrate of a cell region; forming an insulating film over the vertical cell transistor structure; planarizing the insulating film to expose a hard mask film disposed at a top portion of the vertical cell transistor structure; and forming a storage node contact by removing the hard mask film.
摘要翻译：制造包括垂直单元晶体管结构的半导体器件的方法可以包括在单元区域的半导体衬底上形成垂直单元晶体管结构; 在垂直单元晶体管结构上形成绝缘膜; 对绝缘膜进行平坦化以露出设置在垂直单元晶体管结构的顶部的硬掩模膜; 并通过去除硬掩模膜形成存储节点接触。

3. 发明申请

US20080286954A1 Method of Forming Pattern of Semiconductor Device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US20080286954A1
公开(公告)日：2008-11-20
申请号：US11947228
申请日：2007-11-29
申请人： Seo Min Kim , Chang Moon Lim
发明人： Seo Min Kim , Chang Moon Lim
IPC分类号： H01L21/425
CPC分类号： H01L21/32139 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144 , Y10S438/924
摘要： A method of forming a pattern of a semiconductor device comprises forming a first hard mask film, a first resist film, and a second hard mask film over an underlying layer of a semiconductor substrate; forming a second resist pattern over the second hard mask film; etching the second hard mask film using the second resist pattern as an etching mask to form a second hard mask pattern; performing an ion-implanting process on the first resist film with the second hard mask pattern as an ion implanting mask to form an ion implanting layer in a portion of the first resist film, and selectively etching the first resist film with the second hard mask pattern and an ion implanting layer as an etching mask to form a first resist pattern.
摘要翻译：形成半导体器件的图案的方法包括在半导体衬底的下层上形成第一硬掩模膜，第一抗蚀膜和第二硬掩模膜; 在所述第二硬掩模膜上形成第二抗蚀剂图案; 使用第二抗蚀剂图案作为蚀刻掩模蚀刻第二硬掩模膜以形成第二硬掩模图案; 对所述第一抗蚀剂膜进行离子注入工艺，其中所述第二硬掩模图案作为离子注入掩模，以在所述第一抗蚀剂膜的一部分中形成离子注入层，并且用所述第二硬掩模图案选择性地蚀刻所述第一抗蚀剂膜以及作为蚀刻掩模的离子注入层以形成第一抗蚀剂图案。

4. 发明授权

US07381519B2 Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same 失效
标题翻译：顶级抗反射涂料聚合物，其制备方法和包含其的顶部抗反射涂料组合物
公开(公告)号：US07381519B2
公开(公告)日：2008-06-03
申请号：US11158965
申请日：2005-06-22
申请人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
发明人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
IPC分类号： G03F7/38 , G03F7/30 , G03F7/11 , G03F7/095
CPC分类号： G03F7/091 , C08F220/06 , C08F220/18 , C08F222/06 , C08F232/08 , G03F7/0045 , G03F7/0046
摘要： Disclosed herein is a top anti-reflective coating polymer and its composition comprising the same represented by Formula 1 below: wherein R1 and R2 are independently, hydrogen, methyl or fluoromethyl; R3 and R4 are independently, a C1-10hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are wholly or partly replaced by fluorine atoms; and a, b, c, d and e represent the mole fraction of each monomer and are in the range between about 0.05 and about 0.9, such that the sum of a, b, c, d, and e equals one.
摘要翻译：本文公开了顶部抗反射涂层聚合物及其组合物，其包含与下式1表示的相同的基团：其中R 1和R 2独立地为氢，甲基或氟甲基 ; R 3和R 4独立地为C 1-10烷基或C 1-10烷基，其中C 1〜氢原子被氟原子全部或部分取代; 并且a，b，c，d和e表示各单体的摩尔分数，并且在约0.05和约0.9之间的范围内，使得a，b，c，d和e之和等于1。

5. 发明授权

US07629595B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07629595B2
公开(公告)日：2009-12-08
申请号：US11609879
申请日：2006-12-12
申请人： Jae Chang Jung , Chang Moon Lim
发明人： Jae Chang Jung , Chang Moon Lim
IPC分类号： G03F7/26
CPC分类号： H01L21/0274
摘要： A method for forming a fine photoresist pattern of a semiconductor device, the method comprising the steps of forming a chemically amplified photoresist film over an underlying layer formed over a semiconductor substrate to form a first photoresist pattern; exposing the first photoresist pattern without exposure mask to bake the resulting structure; and flowing the photoresist of the first photoresist pattern to obtain a second photoresist pattern.
摘要翻译：一种用于形成半导体器件的精细光致抗蚀剂图案的方法，所述方法包括以下步骤：在形成在半导体衬底上的下层上形成化学放大光致抗蚀剂膜以形成第一光致抗蚀剂图案; 暴露第一光致抗蚀剂图案而不具有曝光掩模以烘烤所得结构; 并使第一光致抗蚀剂图案的光致抗蚀剂流动以获得第二光致抗蚀剂图案。

6. 发明授权

US07571424B2 Diffused aerial image model semiconductor device fabrication 失效
标题翻译：扩散空间图像模型半导体器件制造
公开(公告)号：US07571424B2
公开(公告)日：2009-08-04
申请号：US11592142
申请日：2006-11-03
申请人： Chang Moon Lim , Jun Taek Park
发明人： Chang Moon Lim , Jun Taek Park
IPC分类号： G06F17/50
CPC分类号： G03F7/705
摘要： A lithography method has a simulation method for mathematically approximating a photoresist film pattern with a Diffused Aerial Image Model (“DAIM”) for semiconductor device fabrication. The DAIM is applied with at least two acids having heterogeneous diffusion characteristics.
摘要翻译：光刻方法具有用于半导体器件制造的扩散空中图像模型（“DAIM”）对光致抗蚀剂膜图案进行数学近似的模拟方法。 DAIM应用于具有不均匀扩散特性的至少两种酸。

7. 发明授权

US07838201B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07838201B2
公开(公告)日：2010-11-23
申请号：US12420698
申请日：2009-04-08
申请人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
发明人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
IPC分类号： G03F7/30
CPC分类号： G03F7/0045 , C08F232/08 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.
摘要翻译：一种用于浸没式光刻的聚合物，其包含由式1表示的重复单元和含有该重复单元的光致抗蚀剂组合物。由本发明的光致抗蚀剂组合物形成的光致抗蚀剂膜具有很高的耐溶解性，用于浸没式光刻的水溶液中的光致酸产生剂，从而防止曝光透镜的污染和曝光引起的光致抗蚀剂图案的变形。

8. 发明授权

US07553771B2 Method of forming pattern of semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US07553771B2
公开(公告)日：2009-06-30
申请号：US11947228
申请日：2007-11-29
申请人： Seo Min Kim , Chang Moon Lim
发明人： Seo Min Kim , Chang Moon Lim
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32139 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144 , Y10S438/924
摘要： A method of forming a pattern of a semiconductor device comprises forming a first hard mask film, a first resist film, and a second hard mask film over an underlying layer of a semiconductor substrate; forming a second resist pattern over the second hard mask film; etching the second hard mask film using the second resist pattern as an etching mask to form a second hard mask pattern; performing an ion-implanting process on the first resist film with the second hard mask pattern as an ion implanting mask to form an ion implanting layer in a portion of the first resist film, and selectively etching the first resist film with the second hard mask pattern and an ion implanting layer as an etching mask to form a first resist pattern.
摘要翻译：形成半导体器件的图案的方法包括在半导体衬底的下层上形成第一硬掩模膜，第一抗蚀膜和第二硬掩模膜; 在所述第二硬掩模膜上形成第二抗蚀剂图案; 使用第二抗蚀剂图案作为蚀刻掩模蚀刻第二硬掩模膜以形成第二硬掩模图案; 对所述第一抗蚀剂膜进行离子注入处理，其中所述第二硬掩模图案作为离子注入掩模，以在所述第一抗蚀剂膜的一部分中形成离子注入层，并且用所述第二硬掩模图案选择性地蚀刻所述第一抗蚀剂膜以及作为蚀刻掩模的离子注入层以形成第一抗蚀剂图案。

9. 发明授权

US07462439B2 Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same 失效
标题翻译：顶级抗反射涂料聚合物，其制备方法和包含其的顶部抗反射涂料组合物
公开(公告)号：US07462439B2
公开(公告)日：2008-12-09
申请号：US11159735
申请日：2005-06-23
申请人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
发明人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
IPC分类号： G03F7/32 , G03F7/095 , G03F7/11 , G03F7/039 , C08F22/18
CPC分类号： G03F7/091 , C09D5/32 , G03F7/0046 , G03F7/0048 , G03F7/0392 , Y10S438/952
摘要： Disclosed herein is a top anti-reflective coating polymer represented by Formula 1, below: wherein R1 and R2 are independently hydrogen, fluoro, methyl or fluoromethyl; R3 is a C1-10 hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are partly replaced by fluorine atoms; and a, b and c, representing the mole fraction of each monomer, are in the range between 0.05 and 0.9. Because a top anti-reflective coating formed using the anti-reflective coating polymer of Formula 1 is not soluble in water, it can be applied to immersion lithography using water as a medium for a light source. In addition, because the top anti-reflective coating can reduce the reflectance from an underlying layer, the uniformity of CD is improved, thus enabling the formation of an ultra fine pattern.
摘要翻译：本文公开了由下式1表示的顶部抗反射涂层聚合物：其中R1和R2独立地为氢，氟，甲基或氟甲基; R3是其中氢原子被氟原子部分取代的C1-10烃或C1-10烃; 和表示每个单体的摩尔分数的a，b和c在0.05和0.9之间的范围内。由于使用式1的抗反射涂层聚合物形成的顶部抗反射涂层不溶于水，因此可以使用水作为光源的介质进行浸渍光刻。此外，由于顶部抗反射涂层可以降低来自下层的反射率，因此提高了CD的均匀性，从而能够形成超细图案。

10. 发明授权

US07303858B2 Photoacid generating polymer, its preparation method, top anti-reflective coating composition comprising the same, method of forming a pattern in a semiconductor device, and semiconductor device 失效
标题翻译：光生酸聚合物及其制备方法，包含其的顶部抗反射涂料组合物，在半导体器件中形成图案的方法以及半导体器件
公开(公告)号：US07303858B2
公开(公告)日：2007-12-04
申请号：US11168102
申请日：2005-06-28
申请人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
发明人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
IPC分类号： G03F7/095 , G03F7/11 , G03F7/38 , G03F7/30 , G03F7/20
CPC分类号： G03F7/0045 , C08F220/06 , C08F220/18 , C08F222/06 , C08F232/08 , G03F7/0046 , G03F7/091 , Y10S430/105 , Y10S430/151 , Y10S430/162 , Y10S522/904
摘要： Disclosed herein is a photoacid generating polymer represented by Formula 1 below: wherein R1 is a C1-10 hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are wholly or partly replaced by fluorine atoms; R2 is hydrogen or a methyl group; and a, b, c and d represent the mole fraction of each monomer and are in the range between about 0.05 and about 0.9, such that the sum of a, b, c, and d equals one. Since the photoacid generating polymer of Formula 1 is not water-soluble and acts as a photoacid generator, it can be used to prepare a top anti-reflective coating composition for immersion lithography.
摘要翻译：本文公开了由下式1表示的光酸产生聚合物：

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