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1. 发明授权

US09096946B2 Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same 有权
标题翻译：可重复使用的双坩埚用于硅熔化和制造硅片的制造装置
公开(公告)号：US09096946B2
公开(公告)日：2015-08-04
申请号：US13304497
申请日：2011-11-25
申请人： Jin Seok Lee , Bo Yun Jang , Young Soo Ahn
发明人： Jin Seok Lee , Bo Yun Jang , Young Soo Ahn
IPC分类号： C30B35/00 , C30B15/00 , C30B15/10 , C30B29/06
CPC分类号： C30B15/007 , C30B15/10 , C30B29/06 , C30B35/002
摘要： A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.
摘要翻译：公开了一种用于硅熔化的双坩埚和包括其的硅薄膜的制造装置。用于硅熔化的双坩埚包括形成为容器形状的石墨坩埚，其具有形成在其中的出口部分的开口顶部和底部，以排出硅熔体，所述石墨坩埚包括被配置为连接出口部分和内部彼此相对于出口部分的顶表面具有预定斜率的壁和与石墨坩埚相对应地插入地连接到石墨坩埚的石英坩埚，石英坩埚具有硅基底填充的材料。

2. 发明申请

US20130067959A1 A GRAPHITE CRUCIBLE FOR SILICON ELECTROMAGNETIC INDUCTION HEATING AND APPARATUS FOR SILICON MELTING AND REFINING USING THE GRAPHITE CRUCIBLE 审中-公开
标题翻译：用于硅电磁感应加热的石墨坩埚和使用石墨坩埚进行硅熔体和精炼的装置
公开(公告)号：US20130067959A1
公开(公告)日：2013-03-21
申请号：US13677334
申请日：2012-11-15
申请人： Jin Seok Lee , Young Soo Ahn , Bo Yun Jang , Joon Soo Kim
发明人： Jin Seok Lee , Young Soo Ahn , Bo Yun Jang , Joon Soo Kim
IPC分类号： F27B14/06 , F27B14/00
CPC分类号： F27B14/061 , C30B11/002 , C30B13/14 , C30B15/10 , C30B29/06 , C30B35/002 , F27B14/00
摘要： The present disclosure provides a graphite crucible induction-based silicon melting. The graphite crucible comprises a cylindrical body having a plurality of slits which is formed through an outer wall and an inner wall of the cylindrical body and a bottom part connected with an edge of the cylindrical body to seal an end of the cylindrical body.
摘要翻译：本公开提供了一种基于石墨坩埚的感应基硅熔化。石墨坩埚包括具有多个狭缝的圆柱体，其通过圆筒体的外壁和内壁形成，底部与圆柱体的边缘连接以密封圆柱体的端部。

3. 发明授权

US08997524B2 Apparatus for manufacturing polysilicon based electron-beam melting using dummy bar and method of manufacturing polysilicon using the same 有权
标题翻译：使用虚拟棒制造基于多晶硅的电子束熔化的装置和使用其制造多晶硅的方法
公开(公告)号：US08997524B2
公开(公告)日：2015-04-07
申请号：US13464488
申请日：2012-05-04
申请人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
发明人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
IPC分类号： C01B33/037 , C30B13/22
CPC分类号： C01B33/037 , B01J6/007 , B01J19/085 , B01J2219/00135 , C30B13/22
摘要： Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.
摘要翻译：制造高纯度多晶硅的方法和装置。该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元，其放置在对应于第一电子枪的第一电子束照射区域上，并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。单向凝固单元在其中设置有向下驱动的起始块，以沿向下方向转移熔融硅，并在其下侧形成有冷却通道。起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

4. 发明授权

US08794035B2 Apparatus for manufacturing high purity polysilicon using electron-beam melting and method of manufacturing high purity polysilicon using the same 有权
标题翻译：使用电子束熔化制造高纯度多晶硅的装置和使用其制造高纯度多晶硅的方法
公开(公告)号：US08794035B2
公开(公告)日：2014-08-05
申请号：US13464416
申请日：2012-05-04
申请人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
发明人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
IPC分类号： C01B33/037 , C30B13/22
CPC分类号： C01B33/037 , C30B11/003 , C30B13/22 , C30B29/06
摘要： Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.
摘要翻译：用于制造高纯度多晶硅的装置和方法。该装置包括保持真空气氛的真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 放置在对应于第一电子枪的第一电子束照射区域上的硅熔融单元，其中粉状原料硅由第一电子束放置和熔化; 以及放置在与第二电子枪相对应的第二电子束照射区域上的单向凝固单元，并且经由流道连接到硅熔融单元。单向凝固单元在其下部形成有冷却通道，并且在其中设置有向下驱动的起始块。

5. 发明申请

US20130291596A1 APPARATUS FOR MANUFACTURING POLYSILICON BASED ELECTRON-BEAM MELTING USING DUMMY BAR AND METHOD OF MANUFACTURING POLYSILICON USING THE SAME 有权
标题翻译：用于制造基于多晶硅的电子束熔融的装置和使用其制造多晶硅的方法
公开(公告)号：US20130291596A1
公开(公告)日：2013-11-07
申请号：US13464488
申请日：2012-05-04
申请人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
发明人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
IPC分类号： C01B33/02 , B01J19/08 , C01B33/037
CPC分类号： C01B33/037 , B01J6/007 , B01J19/085 , B01J2219/00135 , C30B13/22
摘要： Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.
摘要翻译：制造高纯度多晶硅的方法和装置。该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元，其放置在对应于第一电子枪的第一电子束照射区域上，并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。单向凝固单元在其中设置有向下驱动的起始块，以沿向下方向转移熔融硅，并在其下侧形成有冷却通道。起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

6. 发明申请

US20130263777A1 APPARATUS FOR MANUFACTURING SILICON SUBSTRATE 审中-公开
标题翻译：制造硅基板的装置
公开(公告)号：US20130263777A1
公开(公告)日：2013-10-10
申请号：US13459109
申请日：2012-04-28
申请人： Jin Seok Lee , Bo Yun Jang , Joon Soo Kim , Young Soo Ahn
发明人： Jin Seok Lee , Bo Yun Jang , Joon Soo Kim , Young Soo Ahn
IPC分类号： C30B15/06 , C30B15/30 , C30B15/10
CPC分类号： C30B15/06 , C30B28/10 , C30B29/06 , C30B35/002 , Y10T117/1048
摘要： There is disclosed an apparatus for manufacturing a silicon substrate including a crucible part, a molding part extended from an outlet of the crucible part, the molding part comprising a molding space where a silicon substrate is formed, and a dummy bar inserted in the molding space from a predetermined portion of the molding part, wherein the dummy bar is formed of a single-crystalline material.
摘要翻译：公开了一种用于制造硅基板的装置，其包括坩埚部分，从坩埚部分的出口延伸的模制部分，模制部分包括形成硅基板的模制空间和插入模制空间中的虚拟棒从模制部件的预定部分，其中虚拟棒由单晶材料形成。

7. 发明申请

US20130291595A1 APPARATUS FOR MANUFACTURING HIGH PURITY POLYSILICON USING ELECTRON-BEAM MELTING AND METHOD OF MANUFACTURING HIGH PURITY POLYSILICON USING THE SAME 有权
标题翻译：使用电子束熔融制造高纯度多晶硅的装置和使用其制造高纯多晶硅的方法
公开(公告)号：US20130291595A1
公开(公告)日：2013-11-07
申请号：US13464416
申请日：2012-05-04
申请人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
发明人： Bo Yun Jang , Jin Seok Lee , Joon Soo Kim , Young Soo Ahn
IPC分类号： C01B33/037 , C03B7/14
CPC分类号： C01B33/037 , C30B11/003 , C30B13/22 , C30B29/06
摘要： Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.
摘要翻译：用于制造高纯度多晶硅的装置和方法。该装置包括保持真空气氛的真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 放置在对应于第一电子枪的第一电子束照射区域上的硅熔融单元，其中粉状原料硅由第一电子束放置和熔化; 以及放置在与第二电子枪相对应的第二电子束照射区域上的单向凝固单元，并且经由流道连接到硅熔融单元。单向凝固单元在其下部形成有冷却通道，并且在其中设置有向下驱动的起始块。

8. 发明授权

US08958520B2 Top nozzle for nuclear fuel assembly having spring insert hole improved in fastening stability and method of manufacturing the same 有权
标题翻译：用于核燃料组件的顶部喷嘴，其具有提高紧固稳定性的弹簧插入孔及其制造方法
公开(公告)号：US08958520B2
公开(公告)日：2015-02-17
申请号：US13524254
申请日：2012-06-15
申请人： Joon Kyoo Park , Jin Seok Lee , Kyeong Lak Jeon , Jung Min Suh , Gi-Jun Gwon , Nam Gyu Park , Kyong Bo Eom , Jin Sun Kim , Dong Geun Ha , Kyoung Joo Kim
发明人： Joon Kyoo Park , Jin Seok Lee , Kyeong Lak Jeon , Jung Min Suh , Gi-Jun Gwon , Nam Gyu Park , Kyong Bo Eom , Jin Sun Kim , Dong Geun Ha , Kyoung Joo Kim
IPC分类号： G21C21/00 , G21C21/16 , G21C3/33
CPC分类号： G21C3/331 , G21C3/3315 , G21C21/00 , Y02E30/40 , Y10T29/494 , Y10T29/49432
摘要： A top nozzle is provided. The top nozzle can include a coupling plate, a perimeter wall and a hold-down spring unit. The coupling plate can be coupled to a guide thimble of the nuclear fuel assembly. The perimeter wall can protrude upwards from the perimeter of the coupling plate. A spring clamp can be provided on the upper surface of the perimeter wall. The hold-down spring unit can be mounted to the upper surface of the perimeter wall in such a way to couple a corresponding end of the hold-down spring unit to the spring clamp. A fastening pin hole can be vertically formed through an upper surface of the spring clamp. A spring insert hole into which the hold-down spring unit can be inserted and formed by electro-discharge machining in an insert direction of the hold-down spring.
摘要翻译：提供顶部喷嘴。顶部喷嘴可以包括联接板，周边壁和压紧弹簧单元。联接板可以联接到核燃料组件的导向套管。周边壁可以从联接板的周边向上突出。可以在周壁的上表面上设置弹簧夹。压紧弹簧单元可以以这样的方式安装到周壁的上表面，以将压紧弹簧单元的相应端部联接到弹簧夹。紧固销孔可以通过弹簧夹的上表面垂直地形成。弹簧插入孔，压紧弹簧单元可以通过放电加工在压紧弹簧的插入方向上插入和形成。

9. 发明授权

US08811566B2 Guide thimble plug for nuclear fuel assembly 有权
标题翻译：用于核燃料组件的导向套管塞
公开(公告)号：US08811566B2
公开(公告)日：2014-08-19
申请号：US12749470
申请日：2010-03-29
申请人： Nam Gyu Park , Gi-Jun Gwon , Kyeong Lak Jeon , Jung Min Suh , Jin Seok Lee , Kyong Bo Eom , Joon Kyoo Park , Jin Sun Kim , Dong Geun Ha , Kyoung Joo Kim
发明人： Nam Gyu Park , Gi-Jun Gwon , Kyeong Lak Jeon , Jung Min Suh , Jin Seok Lee , Kyong Bo Eom , Joon Kyoo Park , Jin Sun Kim , Dong Geun Ha , Kyoung Joo Kim
IPC分类号： G21C5/04 , G21C3/32 , G21C3/33
CPC分类号： G21C3/32 , G21C3/3305 , Y02E30/40
摘要： A guide thimble plug for a nuclear fuel assembly is provided, in which an internal threaded hole is formed through a main body so that the main body is coupled to a bottom nozzle by a screw coupling. An upper insert part is formed in the upper end of the main body. The upper insert part is inserted into a shock absorption tube. A thermal deformation prevention part is formed on the main body below the upper insert part and is recessed inward from the outer surface of the main body such that, when the main body is coupled to the guide thimble, a gap is defined between the thermal deformation prevention part and the guide thimble. The guide thimble and the shock absorption tube can be reliably fastened to the bottom nozzle, and thermal deformation of the guide thimble can be minimized.
摘要翻译：提供了一种用于核燃料组件的导向套筒塞，其中内螺纹孔通过主体形成，使得主体通过螺纹联接件联接到底部喷嘴。上部插入部分形成在主体的上端。将上部插入部分插入减震管中。一个热变形防止部分形成在主体下面的上插入部分上，并且从主体的外表面向内凹入，使得当主体联接到导向套管时，在热变形预防部分和导向套管。引导套管和减震管可以可靠地固定到底部喷嘴，并且导引套管的热变形可以最小化。

10. 发明授权

US08288302B2 Method of preparing substrates—molecular sieve layers complex using ultrasound and apparatuses used therein 有权
标题翻译：使用超声波制备底物 - 分子筛层复合物的方法及其中使用的装置
公开(公告)号：US08288302B2
公开(公告)日：2012-10-16
申请号：US11629375
申请日：2005-06-23
申请人： Kyung Byung Yoon , Jin Seok Lee , Kwang Ha , Yun-Jo Lee , Yong Chang
发明人： Kyung Byung Yoon , Jin Seok Lee , Kwang Ha , Yun-Jo Lee , Yong Chang
IPC分类号： B01J29/06
CPC分类号： C23C22/02 , B82Y15/00 , C03C17/002 , C03C17/007 , C03C17/009 , C03C2217/23 , C03C2217/465 , C03C2217/475 , C23C26/00 , C23C30/00
摘要： The present invention relates to a method for preparing substrate-molecular sieve layer complex by vising ultra-sound and apparatuses used therein, more particularly to a method for preparing substrate-molecular sieve layer complex by combining substrate, coupling compound and molecular sieve particle, wherein covalent, ionic, coordinate or hydrogen bond between a substrate and a coupling compound; molecular sieve particle and coupling compound; coupling compounds; coupling compound and intermediate coupling compound is induced by using 15 KHz-100 MHz of ultrasound instead of simple reflux to combine substrate and molecular sieve particles by various processes, further to reduce time and energy, to retain high binding velocity, binding strength, binding intensity and density remarkably, to attach molecular sieve particle uniformly onto all substrates combined with coupling compound selectively, even though substrate with coupling compound and substrate without coupling compound exist together; and apparatuses installed therein, which can improve to produce substrate-molecular sieve layer complex in a large scale.
摘要翻译：本发明涉及一种通过超声波和其中使用的装置制备底物 - 分子筛层复合物的方法，更具体地涉及一种通过将底物，偶联化合物和分子筛颗粒组合制备底物 - 分子筛层复合物的方法，其中底物和偶联化合物之间的共价，离子，配位或氢键; 分子筛颗粒和偶联剂; 偶联化合物; 通过使用15KHz-100MHz的超声波而不是简单回流来诱导偶联化合物和中间偶联化合物，以通过各种方法将底物和分子筛颗粒结合在一起，进一步减少时间和能量，以保持高结合速度，结合强度，结合强度和密度显着地将分子筛颗粒均匀地附着在与偶联化合物组合的所有基材上，即使具有偶联化合物的底物和没有偶联化合物的底物一起存在; 以及安装在其中的装置，其可以改进以大规模生产基质 - 分子筛层复合物。

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