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1. 发明授权

US08664139B2 Desulfurization method for LNT system 有权
标题翻译： LNT系统脱硫方法
公开(公告)号：US08664139B2
公开(公告)日：2014-03-04
申请号：US13315003
申请日：2011-12-08
申请人： Jin Ha Lee , Jae Beom Park , Jeong Ho Kim , Jin Woo Park , Soon Hyung Kwon
发明人： Jin Ha Lee , Jae Beom Park , Jeong Ho Kim , Jin Woo Park , Soon Hyung Kwon
IPC分类号： B01J38/14
CPC分类号： F02D41/028 , F02D41/029 , F02D2200/0812
摘要： A desulfurization method of a nitrogen oxide absorption catalyst when diesel is used may include determining how many times a regeneration of a diesel particulate filter (DPF) is completed, ending a DPF regeneration, if the number of times of the DPF regeneration reaches a predetermined value and entering into a desulfurization mode to desulfurize the DPF, ending the desulfurization mode after the desulfurization mode is performed for a predetermined time, and calculating a particulate matters (PM) amount that is trapped in the DPF after the desulfurization, compensating the trapped PM amount, and determining a time of the DPF regeneration. A desulfurization timing is determined based on the number of times that the DPF is regenerated to be able to simplify the desulfurization logic and also reduce the memory of ECU, when the LNT catalyst is poisoned by a small amount of sulfur included in exhaust gas.
摘要翻译：当使用柴油时，氮氧化物吸收催化剂的脱硫方法可以包括如果DPF再生的次数达到预定值，则确定柴油机微粒过滤器（DPF）的再生次数完成多少次，结束DPF再生进入脱硫模式，对DPF进行脱硫，在脱硫模式进行规定时间后结束脱硫模式，计算脱硫后的DPF中捕集的颗粒物质（PM）的量，补偿被捕获的PM量，并确定DPF再生的时间。当LNT催化剂被废气中包含的少量硫中毒时，基于DPF再生次数能够简化脱硫逻辑并减少ECU的存储量来确定脱硫时间。

2. 发明授权

US07090587B2 Apparatus for combined game of bowling and billiards 失效
公开(公告)号：US07090587B2
公开(公告)日：2006-08-15
申请号：US10441350
申请日：2003-05-20
申请人： Jeong Ho Kim
发明人： Jeong Ho Kim
IPC分类号： A63D1/08
CPC分类号： A63D5/023 , A63D5/08
摘要： Disclosed is an apparatus for a billiard bowling game. The apparatus includes a bowling pin distributing section and a bowling ball returning section. The bowling pin distributing section is constructed such that, while bowling pin distributing means is driven by driving means, respective bowling pins transferred from bowling pin collecting means are sequentially set in bowling pin setting holes defined in a bowling pin setting plate. The bowling ball returning section is constructed such that the bowling ball rolling on a sloped plate which is fastened to a fixed plate of a base section is raised between a curved inner edge of a bowling ball-guiding curved plate and a bowling ball-driving wheel fitted around a driving shaft and between inner surfaces of a pair of side plates, so as to be placed at an entrance to bowling ball returning rails.

3. 发明授权

US06528418B1 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06528418B1
公开(公告)日：2003-03-04
申请号：US09957094
申请日：2001-09-20
申请人： Jeong Ho Kim , Jae Seon Yu
发明人： Jeong Ho Kim , Jae Seon Yu
IPC分类号： H01L2144
CPC分类号： H01L21/76897
摘要： A method for manufacturing a semiconductor device is disclosed. In a method for forming a contact plug according to a high integration of a semiconductor device, the method for manufacturing a semiconductor device leaves a low dielectric insulating film as a release film in a bit line contact and a storage electrode contact region of an upper semiconductor substrate where a MOSFET is provided, forms a contact plug which buries a spacing between the bit line contact and the storage electrode contact region, forms a contact plug without damaging a lower layer by removing the release layer, and solves a misalignment problem that occurs during a photolithography process and solves a problem in obtaining a contact area by a slope etching profile that occurs during the etching process, thereby providing an improved process margin.
摘要翻译：公开了一种制造半导体器件的方法。在根据半导体器件的高集成度形成接触插塞的方法中，半导体器件的制造方法在位线接触中留下作为剥离膜的低介电绝缘膜和上半导体的存储电极接触区域提供MOSFET的衬底形成了在位线接触和存储电极接触区域之间形成间隔的接触插塞，通过移除释放层而形成接触插塞而不损坏下层，并且解决了在光刻工艺，并且通过在蚀刻工艺期间发生的斜率蚀刻轮廓来解决获得接触面积的问题，从而提供改进的工艺余量。

4. 发明申请

US20100175410A1 REFRIGERATOR WITH NOISE REDUCTION STRUCTURE USING INVERSE PHASE SOUND WAVE 有权
标题翻译：使用反相声波的具有噪声减少结构的制冷机
公开(公告)号：US20100175410A1
公开(公告)日：2010-07-15
申请号：US12440358
申请日：2007-09-07
申请人： Joon Keun Lee , Jeong Ho Kim , Won Ki Park
发明人： Joon Keun Lee , Jeong Ho Kim , Won Ki Park
IPC分类号： F25D23/00
CPC分类号： F25B41/00 , F04D29/665 , F25B2500/12
摘要： Disclosed is a refrigerator having a noise reduction structure. According to the refrigerator, a branch pipe for reducing the intensive noise occurring from an impeller part is provided to a discharge pipe connected so that the refrigerant is discharged in a direction of a condenser from the impeller part. Therefore, the traveling sound wave of the noise traveling along the discharge pipe and the reverse sound wave traveling toward the branch pipe provided to the outer periphery of the discharge pipe meet each other, so that the both sound waves are cancelled to reduce the noise.
摘要翻译：公开了具有降噪结构的冰箱。根据该冰箱，将连接有从叶轮部发出的强噪声的分支管设置在连接的排出管上，使得制冷剂从叶轮部向冷凝器的方向排出。因此，沿着排出管行进的噪声的行进声波和朝向设置在排出管的外周的分支管行进的反向声波彼此相遇，从而消除两个声波以降低噪声。

5. 发明授权

US07411996B2 Signal path searching method and apparatus thereof in mobile communication system provided with plurality of array antenna elements 失效
标题翻译：信号路径搜索方法及其装置，在具有多个阵列天线元件的移动通信系统中
公开(公告)号：US07411996B2
公开(公告)日：2008-08-12
申请号：US10263831
申请日：2002-10-04
申请人： Jeong Ho Kim
发明人： Jeong Ho Kim
IPC分类号： H03D1/00 , H04L27/06 , H04B1/69
CPC分类号： H04B1/70752 , H04B1/70755 , H04B1/7117 , H04B7/0845 , H04B7/086 , H04B7/0891 , H04L1/06
摘要： Disclosed is a signal path searching method in a mobile communication system provided with a plurality of array antenna elements. According to the method and apparatus, the path search is performed using a signal of a chip level or a signal of a symbol level, and it is decided whether to first perform a temporal process or a spatial process according to the level.
摘要翻译：公开了一种设置有多个阵列天线元件的移动通信系统中的信号路径搜索方法。根据该方法和装置，使用芯片级的信号或符号级的信号来执行路径搜索，并且根据该级别决定是否首先执行时间处理或空间处理。

6. 发明授权

US06558999B2 Method for forming a storage electrode on a semiconductor device 有权
公开(公告)号：US06558999B2
公开(公告)日：2003-05-06
申请号：US09860779
申请日：2001-05-21
申请人： Jeong Ho Kim , Yu Chang Kim
发明人： Jeong Ho Kim , Yu Chang Kim
IPC分类号： H01L218234
CPC分类号： H01L28/92 , H01L28/55
摘要： The present invention provides a method for forming a storage electrode on a semiconductor substrate, and in particular to a storage electrode formation method which can prevent formation of a sharp upper edged cylindrical storage electrode, thereby improving a dielectric property and reliability of a capacitor.

7. 发明授权

US06660652B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06660652B2
公开(公告)日：2003-12-09
申请号：US09745429
申请日：2000-12-26
申请人： Jeong Ho Kim , Yu Chang Kim
发明人： Jeong Ho Kim , Yu Chang Kim
IPC分类号： H01L21302
CPC分类号： H01L21/76897 , H01L21/76802
摘要： The present invention discloses a method for fabricating a semiconductor device. In a process for forming metal interconnection contact holes on both a gate electrode including an Si-rich SiON film as a mask insulating film in a peripheral circuit region and on a semiconductor substrate, the metal interconnection contact hole is formed according to a three-step etching process using a photoresist film pattern exposing the intended locations of a metal interconnection contacts as an etching mask. Accordingly, contact properties are improved by preventing damage to the semiconductor substrate, thereby reducing leakage current and improving yield.
摘要翻译：本发明公开了一种半导体器件的制造方法。在外围电路区域的半导体衬底上，作为掩模绝缘膜的富Si硅膜的栅极上形成金属互连接触孔的工序中，金属互连接触孔根据三步骤使用暴露金属互连触点的预期位置作为蚀刻掩模的光致抗蚀剂膜图案的蚀刻工艺。因此，通过防止对半导体衬底的损坏来改善接触性能，从而减少漏电流并提高产量。

8. 发明授权

US06444559B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06444559B2
公开(公告)日：2002-09-03
申请号：US09741880
申请日：2000-12-22
申请人： Jeong Ho Kim , Yu Chang Kim
发明人： Jeong Ho Kim , Yu Chang Kim
IPC分类号： H01L2144
CPC分类号： H01L21/28525 , H01L21/76885 , H01L21/76897
摘要： The present invention discloses a method for fabricating a semiconductor device. In a process for forming a contact plug, a pad polycrystalline silicon layer pattern is formed at the presumed contact region, and a contact plug is formed according to a selective epitaxial growth (SEG) method using the pad polycrystalline silicon layer pattern as a seed. Accordingly, a higher contact plug is formed by improving a growth rate of the SEG process, and thus a succeeding process can be easily performed. In the SEG process, a contact property is improved by compensating for a semiconductor substrate damaged in a process for forming an insulating film spacer at the sidewalls of a gate electrode. As a result, the property and yield of the semiconductor device are remarkably improved.
摘要翻译：本发明公开了一种半导体器件的制造方法。在形成接触插塞的工艺中，在推定的接触区域形成焊盘多晶硅层图案，并且使用焊盘多晶硅层图案作为种子，根据选择性外延生长（SEG）方法形成接触插塞。因此，通过提高SEG处理的生长速度来形成更高的接触塞，因此可以容易地进行后续处理。在SEG工艺中，通过补偿在栅电极的侧壁处形成绝缘膜间隔物的工艺中损坏的半导体衬底，提高了接触性能。结果，显着提高了半导体器件的性能和产率。

9. 发明授权

US06432816B1 Method for fabricating semiconductor device 有权
公开(公告)号：US06432816B1
公开(公告)日：2002-08-13
申请号：US09741878
申请日：2000-12-22
申请人： Jeong Ho Kim , Jae Seon Yu
发明人： Jeong Ho Kim , Jae Seon Yu
IPC分类号： H01L214763
摘要： The present invention discloses a method for fabricating a semiconductor device. A protective film for protecting a device isolation film is formed on the device isolation film for the contact hole formation process, thereby preventing a device isolation film from being damaged due to misalignment in a lithography process or overetch during the etch process. Accordingly, gate induced drain leakage current is not generated, contact junction leakage current is reduced, and the contact properties are improved. Improvements in the contact properties produce corresponding improvements in the properties and yield of the semiconductor devices manufactured according to the invention.

10. 发明授权

US5702974A Method for fabricating capacitor of semiconductor device 失效
标题翻译：制造半导体器件电容器的方法
公开(公告)号：US5702974A
公开(公告)日：1997-12-30
申请号：US790863
申请日：1997-02-03
申请人： Jeong Ho Kim
发明人： Jeong Ho Kim
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L21/70
CPC分类号： H01L27/10852 , H01L27/10817
摘要： A method for fabricating a capacitor of a semiconductor device. The capacity of the capacitor is increased through enlargement of the surface area of storage electrode by providing a plurality of side walls which are of prominence and depression to a cylindrical storage electrode such that it can significantly contribute to the high integration of semiconductor devices.
摘要翻译：一种制造半导体器件的电容器的方法。电容器的容量通过提供多个对圆柱形存储电极具有突出和凹陷的侧壁来扩大存储电极的表面积而增加，使得它可以显着有助于半导体器件的高集成度。

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