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    • 5. 发明授权
    • Device for generating a reference current proportional to absolute temperature, with low power supply voltage and large power supply rejection rate
    • 用于产生与绝对温度成比例的参考电流的装置,具有低电源电压和大的电源抑制率
    • US08653885B2
    • 2014-02-18
    • US13472706
    • 2012-05-16
    • Jimmy FortThierry Soude
    • Jimmy FortThierry Soude
    • G06F1/10G05F3/02
    • G05F3/30
    • The device for generating a reference current proportional to absolute temperature comprises processing means connected to the terminals of a core and designed to equalize the voltages across the terminals of the core, the core being designed to then be traversed by an internal current proportional to absolute temperature, and an output module designed to deliver to an output terminal the said reference current on the basis of the said internal current; the processing means comprise a self-biased amplifier possessing at least one first stage arranged according to a folded setup and comprising first PMOS transistors arranged in a setup of the common-gate type, and a feedback stage whose input is connected to the output of the amplifier and whose output is connected to the input of the first stage as well as to at least one terminal of the core.
    • 用于产生与绝对温度成比例的参考电流的装置包括连接到芯的端子并被设计成均衡芯的端子两端的电压的处理装置,芯被设计成随着与绝对温度成正比的内部电流 以及输出模块,被设计为基于所述内部电流将输出端子传递给所述参考电流; 该处理装置包括一个自偏置放大器,该放大器具有至少一个根据折叠设置布置的第一级,并且包括以公共门类型设置的第一PMOS晶体管,以及反馈级,其输入端连接到 放大器,其输出端连接到第一级的输入端以及至少一个端子。
    • 7. 发明授权
    • Method and device for generating an adjustable bandgap reference voltage
    • 用于产生可调节带隙参考电压的方法和装置
    • US08947069B2
    • 2015-02-03
    • US13472731
    • 2012-05-16
    • Jimmy FortThierry Soude
    • Jimmy FortThierry Soude
    • G05F3/16G05F3/20G05F3/30
    • G05F3/267G05F1/468G05F3/30
    • According to an embodiment, generating an adjustable bandgap reference voltage includes generating a current proportional to absolute temperature (PTAT). Generating the PTAT current includes equalizing voltages across the terminals of a core that is designed to be traversed by the PTAT current. Generating the adjustable bandgap reference also includes generating a current inversely proportional to absolute temperature (CTAT), summing the PTAT and the CTAT currents and generating the bandgap reference voltage based on the sum of the currents. Equalizing includes connecting-across the terminals of the core a first fed-back amplifier with at least one first stage arranged as a folded setup and including first PMOS transistors arranged according to a common-gate setup. Equalizing also includes biasing the first stage based on the CTAT current. The summation of the PTAT and CTAT currents is performed in the feedback stage of the first amplifier.
    • 根据实施例,产生可调节带隙参考电压包括产生与绝对温度(PTAT)成比例的电流。 产生PTAT电流包括跨越由PTAT电流穿过的芯的端子的均衡电压。 生成可调节带隙基准还包括产生与绝对温度(CTAT)成反比的电流​​,对PTAT和CTAT电流求和,并根据电流之和产生带隙基准电压。 均衡包括将核心的端子连接到具有布置为折叠设置的至少一个第一级的第一反馈放大器,并且包括根据公共门设置布置的第一PMOS晶体管。 均衡还包括基于CTAT电流偏置第一阶段。 在第一放大器的反馈级中执行PTAT和CTAT电流的求和。
    • 8. 发明申请
    • Device for Generating a Reference Current Proportional to Absolute Temperature, with Low Power Supply Voltage and Large Power Supply Rejection Rate
    • 用于产生与绝对温度成比例的参考电流的器件,具有低电源电压和大电源抑制率
    • US20120293239A1
    • 2012-11-22
    • US13472706
    • 2012-05-16
    • Jimmy FortThierry Soude
    • Jimmy FortThierry Soude
    • H01L37/00
    • G05F3/30
    • The device for generating a reference current proportional to absolute temperature comprises processing means connected to the terminals of a core and designed to equalize the voltages across the terminals of the core, the core being designed to then be traversed by an internal current proportional to absolute temperature, and an output module designed to deliver to an output terminal the said reference current on the basis of the said internal current; the processing means comprise a self-biased amplifier possessing at least one first stage arranged according to a folded setup and comprising first PMOS transistors arranged in a setup of the common-gate type, and a feedback stage whose input is connected to the output of the amplifier and whose output is connected to the input of the first stage as well as to at least one terminal of the core.
    • 用于产生与绝对温度成比例的参考电流的装置包括连接到芯的端子并被设计成均衡芯的端子两端的电压的处理装置,芯被设计成随着与绝对温度成正比的内部电流 以及输出模块,被设计为基于所述内部电流将输出端子传递给所述参考电流; 该处理装置包括一个自偏置放大器,该放大器具有至少一个根据折叠设置布置的第一级,并且包括以公共门类型设置的第一PMOS晶体管,以及反馈级,其输入端连接到 放大器,其输出端连接到第一级的输入端以及至少一个端子。
    • 9. 发明申请
    • Device for Generating an Adjustable Bandgap Reference Voltage with Large Power Supply Rejection Rate
    • 用于产生具有大电源抑制率的可调带隙参考电压的装置
    • US20120293149A1
    • 2012-11-22
    • US13472750
    • 2012-05-16
    • Jimmy FortThierry Soude
    • Jimmy FortThierry Soude
    • G05F1/10
    • G05F1/625G05F3/30
    • An adjustable bandgap reference voltage comprises means for generating current proportional to absolute temperature comprising first means connected to terminals of a core and designed to equalize voltages across the terminals, means for generating a current inversely proportional to absolute temperature connected to the core, and an output module designed to generate the reference voltage; the first processing means comprise a first amplifier possessing a stage, biased by the current inversely proportional to absolute temperature, arranged according to a folded setup and comprising first PMOS transistors arranged according to a common-gate setup, and a stage whose input is connected to the amplifier output and whose output is connected to the first stage input and to a terminal of the core, the second generating means comprise a follower amplifier setup connected to a terminal of the core and separated from the first amplifier, the output module is connected to the feedback stage.
    • 可调节带隙参考电压包括用于产生与绝对温度成比例的电流的装置,包括连接到芯的端子的第一装置,并被设计成使端子两端的电压相等,用于产生与连接到芯的绝对温度成反比的电流​​的装置, 模块设计用于产生参考电压; 第一处理装置包括具有根据折叠设置布置的与绝对温度成反比的电流​​偏置的级的第一放大器,并且包括根据公共门设置布置的第一PMOS晶体管,以及输入端连接到 所述放大器输出并且其输出连接到所述第一级输入端和所述核心端子,所述第二发生装置包括连接到所述核心的端子并与所述第一放大器分离的跟随放大器设置,所述输出模块连接到 反馈阶段。
    • 10. 发明申请
    • Method and Device for Generating an Adjustable Bandgap Reference Voltage
    • 用于产生可调带隙参考电压的方法和装置
    • US20120293143A1
    • 2012-11-22
    • US13472731
    • 2012-05-16
    • Jimmy FortThierry Soude
    • Jimmy FortThierry Soude
    • G05F1/10
    • G05F3/267G05F1/468G05F3/30
    • Generating an adjustable bandgap reference voltage comprises generating a current proportional to absolute temperature comprising an equalization of the voltages across the terminals of a core designed to then be traversed by the said current proportional to absolute temperature, generating a current inversely proportional to absolute temperature, summing these two currents and generating said bandgap reference voltage on the basis of the said sum of currents; the said equalization comprises a connection across the terminals of the core of a first fed-back amplifier possessing at least one first stage arranged as a folded setup and comprising first PMOS transistors arranged according to a common-gate setup, and a biasing of the said first stage on the basis of the said current inversely proportional to absolute temperature, the said summation of the two currents being performed in the feedback stage of the first amplifier.
    • 产生可调节的带隙参考电压包括产生与绝对温度成比例的电流,该电流包括芯的端子两端的电压的均衡,所述芯设计成随着与绝对温度成正比的电流而被穿过,产生与绝对温度成反比的电流 这两个电流并基于所述总和电流产生所述带隙基准电压; 所述均衡包括穿过具有布置为折叠设置的至少一个第一级的第一反馈放大器的核心的端子之间的连接,并且包括根据公共门设置布置的第一PMOS晶体管和所述 基于所述电流与绝对温度成反比的第一级,所述两个电流的所述求和在第一放大器的反馈级中执行。