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    • 1. 发明授权
    • Method of adjusting the flatness of a slider using selective plasma etching
    • 使用选择性等离子体蚀刻来调节滑块的平坦度的方法
    • US06589436B1
    • 2003-07-08
    • US09593990
    • 2000-06-14
    • Jila TabibYiping HsiaoRichard HsiaoRichard T. CampbellCiaran A. Fox
    • Jila TabibYiping HsiaoRichard HsiaoRichard T. CampbellCiaran A. Fox
    • G11B1732
    • G11B5/6005Y10T29/49041
    • Provided is a reactive ion etching (RIE) method for use in altering the flatness of a slider, whereby a slider or row of sliders is placed within a RIE apparatus. The apparatus comprises essentially an electrode within a chamber having an inlet and an outlet. The electrode is controlled by a bias power source. A source power is provided to the chamber to generate the plasma, wherein a gas or gas mixture is first introduced to the chamber and the source power is adjusted to maximize the plasma composition of ions and reactive neutral species. The ions and reactive neutral species are generated from reactive chemical species such as CHF3 and other F-containing species. An inert gas such as Argon may also be present. Typically, TiC within the Al2O3 matrix of the slider substrate surface is etched at a faster rate than other substrate species.
    • 提供了用于改变滑块的平坦度的反应离子蚀刻(RIE)方法,由此在RIE装置内放置滑块或滑块排。 该设备基本上包括具有入口和出口的腔室内的电极。 电极由偏压电源控制。 将源功率提供给腔室以产生等离子体,其中首先将气体或气体混合物引入腔室,并且调节源功率以最大化离子和反应性中性物质的血浆组成。 离子和反应性中性物质由反应性化学物质如CHF3和其他含F物质产生。 惰性气体如氩气也可能存在。 通常,滑块衬底表面的Al 2 O 3基体内的TiC以比其它衬底物质更快的速度被蚀刻。