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1. 发明申请

US20130192516A1 METHOD OF PREPARING CAST SILICON BY DIRECTIONAL SOLIDIFICATION 审中-公开
标题翻译：通过定向固化法制备硅酸钠的方法
公开(公告)号：US20130192516A1
公开(公告)日：2013-08-01
申请号：US13360116
申请日：2012-01-27
申请人： Jihong Chen , Aditya Deshpande
发明人： Jihong Chen , Aditya Deshpande
IPC分类号： C30B19/08
CPC分类号： C30B11/002 , C30B11/14 , C30B29/06
摘要： A method of preparing a silicon melt in a crucible for use in the manufacture of cast silicon, wherein the crucible comprises an opening, an opposing bottom surface, and at least one sidewall joining the opening and the bottom surface. The method comprises charging a silicon spacer to the bottom surface of the crucible; arranging a monocrystalline silicon seed crystal on the silicon spacer such that no surface of the monocrystalline silicon material is in contact with the bottom surface of the crucible; charging polycrystalline silicon feedstock to the crucible; and applying heat through at least one of the opening and the at least one sidewall in order to form a partially melted charge of silicon in the crucible.
摘要翻译：一种在用于制造铸硅的坩埚中制备硅熔体的方法，其中坩埚包括开口，相对的底表面和连接开口和底表面的至少一个侧壁。该方法包括将硅隔离物装入坩埚的底表面; 在硅间隔物上布置单晶硅晶种，使得单晶硅材料的表面不与坩埚的底表面接触; 将多晶硅原料装入坩埚中; 并且通过所述开口和所述至少一个侧壁中的至少一个来施加热量，以便在所述坩埚中形成部分熔融的硅填充物。

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