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1. 发明授权

US09196795B2 Formation of group III-V material layers on patterned substrates 有权
标题翻译：在图案化基板上形成III-V族III族材料层
公开(公告)号：US09196795B2
公开(公告)日：2015-11-24
申请号：US14315190
申请日：2014-06-25
申请人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
发明人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
IPC分类号： H01L29/22 , H01L33/32 , H01L33/22 , H01L33/16 , H01L33/30 , C30B23/02 , C30B25/04 , C30B25/18 , C30B29/40 , H01L21/02 , C23C16/06 , H01L33/20 , H01L33/00
CPC分类号： H01L33/32 , C23C16/06 , C30B23/025 , C30B25/04 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/0254 , H01L33/0066 , H01L33/007 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/30
摘要： Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
摘要翻译：描述了氮化镓和其它这样的相关膜的外延方法以及图案化蓝宝石衬底上的发光二极管以及其它这样的相关衬底。

2. 发明授权

US08765501B2 Formation of group III-V material layers on patterned substrates 有权
标题翻译：在图案化基板上形成III-V族III族材料层
公开(公告)号：US08765501B2
公开(公告)日：2014-07-01
申请号：US13036261
申请日：2011-02-28
申请人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
发明人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , C23C16/06 , C30B23/025 , C30B25/04 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/0254 , H01L33/0066 , H01L33/007 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/30
摘要： Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
摘要翻译：描述了氮化镓和其它这样的相关膜的外延方法以及图案化蓝宝石衬底上的发光二极管以及其它这样的相关衬底。

3. 发明申请

US20140367696A1 FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES 有权
标题翻译：在形成基底的III-V族材料层上形成
公开(公告)号：US20140367696A1
公开(公告)日：2014-12-18
申请号：US14315190
申请日：2014-06-25
申请人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
发明人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
IPC分类号： H01L33/32 , H01L33/20 , C23C16/06 , H01L33/00
CPC分类号： H01L33/32 , C23C16/06 , C30B23/025 , C30B25/04 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/0254 , H01L33/0066 , H01L33/007 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/30
摘要： Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
摘要翻译：描述了氮化镓和其它这样的相关膜的外延方法以及图案化蓝宝石衬底上的发光二极管以及其它这样的相关衬底。

4. 发明申请

US20110210425A1 FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES 有权
标题翻译：在形成基底的III-V族材料层上形成
公开(公告)号：US20110210425A1
公开(公告)日：2011-09-01
申请号：US13036261
申请日：2011-02-28
申请人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
发明人： Jie Su , Tuoh-Bin Ng , Olga Kryliouk , Sang Won Kang , Jie Cui
IPC分类号： H01L29/02 , H01L21/20 , C23C16/44 , C23C16/34 , C30B25/08
CPC分类号： H01L33/32 , C23C16/06 , C30B23/025 , C30B25/04 , C30B25/186 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/0254 , H01L33/0066 , H01L33/007 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/30
摘要： Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
摘要翻译：描述了氮化镓和其它这样的相关膜的外延方法以及图案化蓝宝石衬底上的发光二极管以及其它这样的相关衬底。

5. 发明申请

US20130098455A1 MULTIPLE COMPLEMENTARY GAS DISTRIBUTION ASSEMBLIES 有权
标题翻译：多个补充气体分配组件
公开(公告)号：US20130098455A1
公开(公告)日：2013-04-25
申请号：US13649488
申请日：2012-10-11
申请人： Tuoh-Bin Ng , Yuriy Melnik , Lily L. Pang , Eda Tuncel , Lu Chen , Son T. Nguyen
发明人： Tuoh-Bin Ng , Yuriy Melnik , Lily L. Pang , Eda Tuncel , Lu Chen , Son T. Nguyen
IPC分类号： C23C16/455
CPC分类号： C23C16/303 , C23C16/4488 , C23C16/45574 , C23C16/4558 , Y10T137/0318 , Y10T137/8593
摘要： Described herein are exemplary apparatuses having multiple gas distribution assemblies in accordance with one embodiment. In one embodiment, the apparatus includes two or more gas distribution assemblies. Each gas distribution assembly has orifices through which at least one process gas is introduced into a processing chamber. The two or more gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.
摘要翻译：这里描述了具有根据一个实施例的多个气体分配组件的示例性装置。在一个实施例中，该装置包括两个或更多个气体分配组件。每个气体分配组件都具有孔口，至少一个处理气体通过孔口被引入处理室。两个或更多个气体分配组件可被设计成具有互补的特征径向膜生长速率曲线。

6. 发明授权

US06199748B1 Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materials 失效
标题翻译：半导体共晶合金金属（SEAM）技术，用于制造柔性复合基板和材料的集成
公开(公告)号：US06199748B1
公开(公告)日：2001-03-13
申请号：US09378769
申请日：1999-08-20
申请人： Zuhua Zhu , Tuoh-Bin Ng , Yu-Hwa Lo
发明人： Zuhua Zhu , Tuoh-Bin Ng , Yu-Hwa Lo
IPC分类号： B23K3102
CPC分类号： B23K20/023
摘要： A method of semiconductor eutectic alloy metal (SEAM) technology for integration of heterogeneous materials and fabrication of compliant composite substrates takes advantage of eutectic properties of alloys. Sub1 and Sub2 are used to represent the two heterogeneous materials to be bonded or composed into a compliant composite substrate. For the purpose of fabricating compliant composite substrate, the first substrate material (Sub1) combines with the second substrate material (Sub2) to form a composite substrate that controls the stress in the epitaxial layers during cooling. The second substrate material (Sub2) controls the stress in the epitaxial layer grown thereon so that it is compressive during annealing. A joint metal (JM) with a melting point of Tm is chosen to offer variable joint stiffness at different temperatures. JM and Sub1 form a first eutectic alloy at a first eutectic temperature Teu1 while JM and Sub2 form a second eutectic alloy at a second eutectic temperature Teu2. Tm1 and Tm2 are the melting points of Sub1 and Sub2, respectively. The following condition should be met: Tm1, Tm2>Tm>Teu1, Teu2. After cleaning of Sub1 and Sub2, JM is deposited on the bonding sides of Sub1 and Sub2. After preliminary bonding by applying force to press the bonding surfaces together at room temperature, high temperature bonding is subsequently performed, during which the temperature is ramped up to a temperature equal to or higher than Tm. During cooling, JM solidifies first, after which two eutectic alloys solidify.
摘要翻译：半导体共晶合金金属（SEAM）技术用于整合异质材料和制造合适的复合材料的方法利用了合金的共晶性能。 Sub1和Sub2用于表示待结合或组成合适的复合衬底的两种异质材料。为了制造合适的复合衬底，第一衬底材料（Sub1）与第二衬底材料（Sub2）组合以形成控制冷却期间外延层中的应力的复合衬底。第二衬底材料（Sub2）控制在其上生长的外延层中的应力，使得其在退火期间是压缩的。选择熔点为Tm的接头金属（JM），以在不同的温度下提供可变接头刚度。 JM和Sub1在第一共晶温度Teu1下形成第一共晶合金，而JM和Sub2在第二共晶温度Teu2下形成第二共晶合金。 Tm1和Tm2分别是Sub1和Sub2的熔点。应满足以下条件：Tm1，Tm2> Tm> Teu1，Teu2。在清洗Sub1和Sub2之后，JM沉积在Sub1和Sub2的粘合侧上。在室温下通过施加力将结合面压合在一起进行初步接合之后，随后进行高温接合，在此期间温度升高至等于或高于Tm的温度。在冷却过程中，首先固化，然后两个共晶合金固化。

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