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1. 发明申请

US20120074372A1 MEMRISTORS WITH AN ELECTRODE METAL RESERVOIR FOR DOPANTS 有权
标题翻译：具有电极金属储存器的电容器用于DOPANTS
公开(公告)号：US20120074372A1
公开(公告)日：2012-03-29
申请号：US12893825
申请日：2010-09-29
申请人： Jianhua Yang , Wei Yi , Michael Josef Stuke , Shih-Yuan Wang
发明人： Jianhua Yang , Wei Yi , Michael Josef Stuke , Shih-Yuan Wang
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/1233 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1658
摘要： A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
摘要翻译：忆阻器包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间的有源区。有源区域具有由电场引起的非导电部分和掺杂剂源部分。非导电部分包括电子半导体或标称绝缘材料和能够承载一种掺杂剂并在电场下输送掺杂剂的弱离子导体开关材料。非导电部分与第一电极接触，并且掺杂剂源部分与第二电极接触。第二电极包括用于掺杂剂的金属储存器。还提供了包括多个纳米级切换装置的交叉开关阵列。还提供了制造至少一个纳米级切换装置的方法。

2. 发明授权

US08325507B2 Memristors with an electrode metal reservoir for dopants 有权
标题翻译：具有用于掺杂剂的电极金属储存器的忆阻器
公开(公告)号：US08325507B2
公开(公告)日：2012-12-04
申请号：US12893825
申请日：2010-09-29
申请人： Jianhua Yang , Wei Yi , Michael Josef Stuke , Shih-Yuan Wang
发明人： Jianhua Yang , Wei Yi , Michael Josef Stuke , Shih-Yuan Wang
IPC分类号： H01L29/8605 , H01L21/04 , G11C11/21
CPC分类号： H01L45/1233 , H01L27/2463 , H01L45/08 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1658
摘要： A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
摘要翻译：忆阻器包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间的有源区。有源区域具有由电场引起的非导电部分和掺杂剂源部分。非导电部分包括电子半导体或标称绝缘材料和能够承载一种掺杂剂并在电场下输送掺杂剂的弱离子导体开关材料。非导电部分与第一电极接触，并且掺杂剂源部分与第二电极接触。第二电极包括用于掺杂剂的金属储存器。还提供了包括多个纳米级切换装置的交叉开关阵列。还提供了制造至少一个纳米级切换装置的方法。

3. 发明申请

US20140346426A1 Memristor with Channel Region in Thermal Equilibrium with Containing Region 有权
标题翻译：带通道区的忆阻器与包含区域的热平衡
公开(公告)号：US20140346426A1
公开(公告)日：2014-11-27
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译：具有与含有区域的热平衡的通道区域的忆阻器。通道区域具有可变浓度的移动离子。由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。

4. 发明申请

US20140112059A1 HIGH-RELIABILITY HIGH-SPEED MEMRISTOR 有权
标题翻译：高可靠性高速电容器
公开(公告)号：US20140112059A1
公开(公告)日：2014-04-24
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译：忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。开关层包含导电通道和储存区。导电通道具有可变浓度的移动离子的费米玻璃材料。储存区域相对于导电通道横向设置，并且用作导电通道的移动离子的源/汇。在开关操作中，在电场和热效应的协同驱动力下，将移动离子移入或离开横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变费米玻璃材料的导电性。

5. 发明申请

US20130100726A1 MULTI-LEVEL MEMORY CELL WITH CONTINUOUSLY TUNABLE SWITCHING 有权
标题翻译：具有连续可调开关的多级存储器单元
公开(公告)号：US20130100726A1
公开(公告)日：2013-04-25
申请号：US13278581
申请日：2011-10-21
申请人： Wei Yi , Feng Miao , Jianhua Yang
发明人： Wei Yi , Feng Miao , Jianhua Yang
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0069 , G11C11/56 , G11C11/5678 , G11C11/5685 , G11C13/00 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C27/005 , G11C29/50008 , G11C2013/0076 , G11C2013/0078 , G11C2013/0083 , G11C2013/009 , G11C2213/15
摘要： The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.
摘要翻译：本公开提供了一种包括多级存储器单元的数据存储设备。数据存储设备可以包括被配置为将数据写入多级存储器单元的电路。写入电路可以包括被配置为实现连续可调切换的顺应性电路。写入电路可以被配置为选择用于切换的顺应性模式，所述兼容性模式从包括当前顺应性和电压一致性的组中选择。

6. 发明授权

US08830727B2 Multi-level memory cell with continuously tunable switching 有权
公开(公告)号：US08830727B2
公开(公告)日：2014-09-09
申请号：US13278581
申请日：2011-10-21
申请人： Wei Yi , Feng Miao , Jianhua Yang
发明人： Wei Yi , Feng Miao , Jianhua Yang
IPC分类号： G11C11/00 , G11C11/56 , G11C27/00 , G11C29/50 , G11C13/00
CPC分类号： G11C13/0069 , G11C11/56 , G11C11/5678 , G11C11/5685 , G11C13/00 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/004 , G11C27/005 , G11C29/50008 , G11C2013/0076 , G11C2013/0078 , G11C2013/0083 , G11C2013/009 , G11C2213/15
摘要： The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.

7. 发明授权

US08766231B2 Nanoscale electronic device with barrier layers 有权
标题翻译：具有阻隔层的纳米级电子器件
公开(公告)号：US08766231B2
公开(公告)日：2014-07-01
申请号：US13041617
申请日：2011-03-07
申请人： Wei Yi , Jianhua Yang , Gilberto Medeiros Ribeiro
发明人： Wei Yi , Jianhua Yang , Gilberto Medeiros Ribeiro
IPC分类号： H01L45/00 , H01L21/62
CPC分类号： H01L29/88 , B82Y10/00 , G11C13/0007 , G11C13/004 , G11C2213/12 , G11C2213/15 , G11C2213/32 , G11C2213/54 , G11C2213/73 , G11C2213/81 , H01L27/1021 , H01L29/0673 , H01L29/0676 , H01L29/413 , H01L29/872
摘要： On example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and a device layer. The device layer comprises a first dielectric material, between the first and second conductive electrodes, that includes an effective device layer, a first barrier layer near a first interface between the first conductive electrode and the device layer, and a second barrier layer near a second interface between the second conductive electrode and the device layer. A second example of the present invention is an integrated circuit that incorporates nanoscale electronic devices of the first example.
摘要翻译：本发明的一个例子是包括第一导电电极，第二导电电极和器件层的纳米级电子器件。器件层包括在第一和第二导电电极之间的第一介电材料，其包括有效器件层，在第一导电电极和器件层之间的第一界面附近的第一势垒层和靠近第二导电电极的第二阻挡层第二导电电极和器件层之间的界面。本发明的第二个例子是包含第一个例子的纳米级电子器件的集成电路。

8. 发明申请

US20140029327A1 BIPOLAR RESISTIVE SWITCH HEAT MITIGATION 有权
标题翻译：双极电阻开关保温
公开(公告)号：US20140029327A1
公开(公告)日：2014-01-30
申请号：US13557199
申请日：2012-07-24
申请人： John Paul Strachan , Gilberto Medeiros Ribeiro , Jianhua Yang , Wei Yi
发明人： John Paul Strachan , Gilberto Medeiros Ribeiro , Jianhua Yang , Wei Yi
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： H01L45/147 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/56 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/128 , H01L45/145 , H01L45/146 , H01L47/00
摘要： A heat mitigated bipolar resistive switch includes a BRS matrix sandwiched between first and second electrodes and a heat mitigator. The BRS matrix is to support bipolar switching of a conduction channel formed between the first and second electrodes through BRS matrix. The heat mitigator is to reduce heat in the BRS matrix generated during bipolar switching. The heat mitigator includes one or both of a parallel-connected NDR element to limit current flowing in the BRS matrix and a high thermal conductivity material to conduct the generated heat away from the BRS matrix above a predetermined elevated temperature.
摘要翻译：一种减热双极电阻开关包括夹在第一和第二电极之间的BRS矩阵和一个热量减轻器。 BRS矩阵是通过BRS矩阵来支持在第一和第二电极之间形成的传导通道的双极开关。减热器是为了减少在双极开关期间产生的BRS基体中的热量。散热器包括一个并联连接的NDR元件中的一个或两个，以限制在BRS基体中流动的电流和高导热性材料，以将产生的热量从BRS基体上导出高于预定的高温。

9. 发明授权

US08525553B1 Negative differential resistance comparator circuits 有权
标题翻译：负差分电阻比较器电路
公开(公告)号：US08525553B1
公开(公告)日：2013-09-03
申请号：US13459877
申请日：2012-04-30
申请人： Wei Yi , Jianhua Yang , Matthew D. Pickett , Minxian Max Zhang
发明人： Wei Yi , Jianhua Yang , Matthew D. Pickett , Minxian Max Zhang
IPC分类号： H03K19/02
CPC分类号： H03K3/313 , H01L27/0802 , H03K19/10
摘要： In one example, an oxide-based negative differential resistance comparator circuit includes a composite NDR device that includes a first electrode, a first thin film oxide-based negative differential resistance (NDR) layer in contact with the first electrode and a central conductive portion. The composite NDR device also includes a second thin film oxide-based NDR layer disposed adjacent to the first NDR layer and a second electrode. A resistor may be placed in series with the composite NDR device and an electrical energy source can apply applying a voltage across the first electrode and second electrode. The composite NDR device produces a threshold based comparator functionality in the comparator circuit.
摘要翻译：在一个示例中，基于氧化物的负差分电阻比较器电路包括复合NDR器件，其包括第一电极，与第一电极接触的第一基于薄膜氧化物的负差分电阻（NDR）层和中心导电部分。复合NDR器件还包括邻近第一NDR层设置的第二薄膜氧化物基NDR层和第二电极。电阻器可以与复合NDR器件串联放置，并且电能源可施加跨越第一电极和第二电极的电压。复合NDR器件在比较器电路中产生基于阈值的比较器功能。

10. 发明申请

US20120228575A1 NANOSCALE ELECTRONIC DEVICE WITH BARRIER LAYERS 有权
标题翻译： NANOSCALE电子设备与障碍层
公开(公告)号：US20120228575A1
公开(公告)日：2012-09-13
申请号：US13041617
申请日：2011-03-07
申请人： Wei Yi , Jianhua Yang , Gilberto Medeiros Ribeiro
发明人： Wei Yi , Jianhua Yang , Gilberto Medeiros Ribeiro
IPC分类号： H01L45/00 , H01L21/62
CPC分类号： H01L29/88 , B82Y10/00 , G11C13/0007 , G11C13/004 , G11C2213/12 , G11C2213/15 , G11C2213/32 , G11C2213/54 , G11C2213/73 , G11C2213/81 , H01L27/1021 , H01L29/0673 , H01L29/0676 , H01L29/413 , H01L29/872
摘要： On example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and a device layer. The device layer comprises a first dielectric material, between the first and second conductive electrodes, that includes an effective device layer, a first barrier layer near a first interface between the first conductive electrode and the device layer, and a second barrier layer near a second interface between the second conductive electrode and the device layer. A second example of the present invention is an integrated circuit that incorporates nanoscale electronic devices of the first example.
摘要翻译：本发明的一个例子是包括第一导电电极，第二导电电极和器件层的纳米级电子器件。器件层包括在第一和第二导电电极之间的第一介电材料，其包括有效器件层，在第一导电电极和器件层之间的第一界面附近的第一势垒层和靠近第二导电电极的第二阻挡层第二导电电极和器件层之间的界面。本发明的第二个例子是包含第一个例子的纳米级电子器件的集成电路。

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