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1. 发明授权

US08617567B2 Fungus polyose composition with immunity enhancing effect and application thereof 失效
标题翻译：具有免疫增强作用的真菌多糖组合物及其应用
公开(公告)号：US08617567B2
公开(公告)日：2013-12-31
申请号：US12631868
申请日：2009-12-07
申请人： Jian Tang , Xiaofei Xu , William Ma , Zhen Luo , Wenjuan Fang
发明人： Jian Tang , Xiaofei Xu , William Ma , Zhen Luo , Wenjuan Fang
IPC分类号： A61K36/06 , A61K36/09 , C07H1/00
CPC分类号： A61K36/07 , A61K36/062 , A61K36/076 , A61K2300/00
摘要： The present invention relates to a compound fungus polyose with the effect of enhancing immunity. The compound is prepared with raw material as follows: Lentinus edodes 8˜100, Poria cocos 15˜100, Dictyophora indusiata 10˜200, Tremella fuciformis 15˜80, Paecilomyces hepiali mycelium 2˜50. The present invention also relates to the use of compound fungus polyose in preparing health dietary supplements for enhancing immunity. The compound fungus polyose of present invention is characterized in that it uses the edible (medicinal) fungus rich in activity polyose as the main raw material and matches various kinds of polyose components, enhances body's immunity in multiple ways, and has beneficial health effects on those who are sub-health. The health dietary supplements prepared with compound fungus polyose of present invention as the main effective component has an evident effect on enhancing immunity and a satisfactory effect on the health of those who are sub-health.
摘要翻译：本发明涉及具有增强免疫力的复合真菌多糖。化合物用原料如下制备：香菇8〜100，茯苓15〜100，印度Dictyophora indusiata 10〜200，银耳银耳15〜80，拟青霉菌丝菌丝2〜50。本发明还涉及复合真菌多糖在制备健康膳食补充剂中用于增强免疫力的用途。本发明的复合真菌多糖的特征在于，以活性多糖为主要原料的食用（药用）真菌，配合各种多糖成分，以多种方式增强机体的免疫力，对其有益健康效果谁是亚健康。用本发明复合真菌多糖制备的健康膳食补充剂作为主要有效成分对增强免疫力和对亚健康者的健康有良好的影响具有明显的效果。

2. 发明申请

US20110021770A1 FUNGUS POLYOSE COMPOSITION WITH IMMUNITY ENHANCING EFFECT AND APPLICATION THEREOF 失效
标题翻译：具有免疫增强效果和应用的真菌聚酯组合物
公开(公告)号：US20110021770A1
公开(公告)日：2011-01-27
申请号：US12631868
申请日：2009-12-07
申请人： Jian Tang , Xiaofei Xu , William Ma , Zhen Luo , Wenjuan Fang
发明人： Jian Tang , Xiaofei Xu , William Ma , Zhen Luo , Wenjuan Fang
IPC分类号： C07H1/00
CPC分类号： A61K36/07 , A61K36/062 , A61K36/076 , A61K2300/00
摘要： The present invention relates to a compound fungus polyose with the effect of enhancing immunity. The compound is prepared with raw material as follows: Lentinus edodes 8˜100, Poria cocos 15˜100, Dictyophora indusiata 10˜200, Tremella fuciformis 15˜80, Paecilomyces hepiali mycelium 2˜50. The present invention also relates to the use of compound fungus polyose in preparing health dietary supplements for enhancing immunity. The compound fungus polyose of present invention is characterized in that it uses the edible (medicinal) fungus rich in activity polyose as the main raw material and matches various kinds of polyose components, enhances body's immunity in multiple ways, and has beneficial health effects on those who are sub-health. The health dietary supplements prepared with compound fungus polyose of present invention as the main effective component has an evident effect on enhancing immunity and a satisfactory effect on the health of those who are sub-health.
摘要翻译：本发明涉及具有增强免疫力的复合真菌多糖。化合物用原料制备如下：香菇8〜100，茯苓15〜100，印，ata 10〜200，银耳15〜80，拟青霉菌丝体2〜50。本发明还涉及复合真菌多糖在制备健康膳食补充剂中用于增强免疫力的用途。本发明的复合真菌多糖的特征在于，以活性多糖为主要原料的食用（药用）真菌，配合各种多糖成分，以多种方式增强机体的免疫力，对其有益健康效果谁是亚健康。用本发明复合真菌多糖制备的健康膳食补充剂作为主要有效成分对增强免疫力和对亚健康者的健康有良好的影响具有明显的效果。

3. 发明申请

US20050153562A1 Method of independent P and N gate length control of FET device made by sidewall image transfer technique 失效
标题翻译：由侧壁图像传输技术制造的FET器件的独立P和N栅极长度控制方法
公开(公告)号：US20050153562A1
公开(公告)日：2005-07-14
申请号：US10754073
申请日：2004-01-08
申请人： Toshiharu Furukawa , Steven Holmes , William Ma
发明人： Toshiharu Furukawa , Steven Holmes , William Ma
IPC分类号： H01L21/033 , H01L21/28 , H01L21/3213 , H01L21/311
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/2815
摘要： Disclosed is a method that forms a conductive layer on a substrate and patterns sacrificial structures above the conductive layer. Next, the invention forms sidewall spacers adjacent the sacrificial structures using a spacer material capable of undergoing dimensional change, after which the invention removes the sacrificial structures in processing that leaves the sidewall spacers in place. The invention then protects selected ones of the sidewall spacers using a sacrificial mask and leaves the other ones of the sidewall spacers unprotected. This allows the invention to selectively expose the unprotected sidewall spacers to processing that changes the size of the unprotected sidewall spacers. This causes the unprotected sidewall spacers have a different size than protected sidewall spacers. Then, the invention removes the sacrificial mask and patterns the conductive layer using the sidewall spacers as a gate conductor mask to create differently sized gate conductors on the substrate. Following this, the invention removes the sidewall spacers and forms the source, drain, and channel regions adjacent the gate conductors.
摘要翻译：公开了一种在基板上形成导电层并在导电层上方形成牺牲结构的方法。接下来，本发明使用能够进行尺寸变化的间隔物材料形成邻近牺牲结构的侧壁间隔，此后本发明在将侧壁间隔物留在适当位置的情况下去除牺牲结构。然后，本发明使用牺牲掩模保护所选择的侧壁间隔物，并且使侧壁间隔物中的其它侧壁隔离件不被保护。这允许本发明选择性地将未受保护的侧壁间隔物暴露于改变未受保护的侧壁间隔物的尺寸的处理。这导致未受保护的侧壁间隔件具有与受保护的侧壁间隔物不同的尺寸。然后，本发明移除牺牲掩模，并且使用侧壁间隔物作为栅极导体掩模来图案化导电层，以在衬底上产生不同尺寸的栅极导体。接下来，本发明移除侧壁间隔物并形成与栅极导体相邻的源极，漏极和沟道区域。

4. 发明申请

US20070182030A1 High-voltage silicon-on-insulator transistors and methods of manufacturing the same 失效
标题翻译：高压硅绝缘体晶体管及其制造方法
公开(公告)号：US20070182030A1
公开(公告)日：2007-08-09
申请号：US11347413
申请日：2006-02-03
申请人： William Ma , Jack Mandelman , Carl Radens , William Tonti
发明人： William Ma , Jack Mandelman , Carl Radens , William Tonti
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/66772 , H01L29/78612 , H01L29/78624 , H01L2924/0002 , H01L2924/00
摘要： In a first aspect, a first method of manufacturing a high-voltage transistor is provided. The first method includes the steps of (1) providing a substrate including a bulk silicon layer that is below an insulator layer that is below a silicon-on-insulator (SOI) layer; and (2) forming one or more portions of a transistor node including a diffusion region of the transistor in the SOI layer. A portion of the transistor node is adapted to reduce a voltage greater than about 5 V within the transistor to a voltage less than about 3 V. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了制造高压晶体管的第一种方法。第一种方法包括以下步骤：（1）提供包括在绝缘体上硅（SOI）层之下的绝缘体层下面的体硅层的衬底; 以及（2）形成包括SOI层中的晶体管的扩散区域的晶体管节点的一个或多个部分。晶体管节点的一部分适于将晶体管内的大于约5V的电压减小到小于约3V的电压。提供了许多其它方面。

5. 发明申请

US20220058598A1 NOVEL CURRENCY AND METHOD OF USING THE SAME 有权
公开(公告)号：US20220058598A1
公开(公告)日：2022-02-24
申请号：US17299417
申请日：2020-11-18
申请人： William Ma
发明人： William Ma
IPC分类号： G06Q20/06 , G06Q20/38
摘要： A currency, said currency having a value associated with a value of a commodity money or an exchange traded fund (ETF), wherein the commodity money or ETF has a value associated with an underlying commodity. The commodity money or ETF may be any commodity ETF or mutual fund including, but not limited to, a precious metal, non-precious metal or any metal, energy, livestock and meat, and agricultural, etc. commodity. The currency is digital currency, that is, not in a physical form such as a printed currency. Each unit of currency may have a unique identifier. The currency may be stored in the block chain. A a system or exchange of distributing the currency purchases and sells said commodity money/ETF in response to exchanges in out and of the currency. A purchase of goods or services using the currency results in a bookkeeping entry to track ownership of the currency.

6. 发明申请

US20080048263A1 HIGH-VOLTAGE SILICON-ON-INSULATOR TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 失效
标题翻译：高压硅绝缘体晶体管及其制造方法
公开(公告)号：US20080048263A1
公开(公告)日：2008-02-28
申请号：US11929694
申请日：2007-10-30
申请人： William Ma , Jack Mandelman , Carl Radens , William Tonti
发明人： William Ma , Jack Mandelman , Carl Radens , William Tonti
IPC分类号： H01L29/786
CPC分类号： H01L29/66772 , H01L29/78612 , H01L29/78624 , H01L2924/0002 , H01L2924/00
摘要： In a first aspect, a first method of manufacturing a high-voltage transistor is provided. The first method includes the steps of (1) providing a substrate including a bulk silicon layer that is below an insulator layer that is below a silicon-on-insulator (SOI) layer; and (2) forming one or more portions of a transistor node including a diffusion region of the transistor in the SOI layer. A portion of the transistor node is adapted to reduce a voltage greater than about 5 V within the transistor to a voltage less than about 3 V. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了制造高压晶体管的第一种方法。第一种方法包括以下步骤：（1）提供包括在绝缘体上硅（SOI）层之下的绝缘体层下面的体硅层的衬底; 以及（2）形成包括SOI层中的晶体管的扩散区域的晶体管节点的一个或多个部分。晶体管节点的一部分适于将晶体管内的大于约5V的电压减小到小于约3V的电压。提供了许多其它方面。

7. 发明授权

US11801068B2 Sheathed cutting device 有权
公开(公告)号：US11801068B2
公开(公告)日：2023-10-31
申请号：US16769485
申请日：2019-10-14
申请人： William Ma
发明人： William Ma
IPC分类号： A61B17/3211 , A61B17/00
CPC分类号： A61B17/3211 , A61B2017/00747 , A61B2017/00907 , A61B2017/32113
摘要： Sheathed cutting device. An exemplary device for discreetly piercing a skin of a patient can comprise a body having a proximal end and a distal end, a cutting member attached to a plunger, the cutting member and the plunger positioned at least partially within the body, and a biasing member configured to bias the cutting member to an initial position whereby the cutting member is positioned fully within the body, wherein the plunger is slidable into the proximal end of the body, causing the cutting member to extend from the distal end of the body.

8. 发明申请

US20210401449A1 SHEATHED CUTTING DEVICE 有权
公开(公告)号：US20210401449A1
公开(公告)日：2021-12-30
申请号：US16769485
申请日：2019-10-14
申请人： William Ma
发明人： William Ma
IPC分类号： A61B17/3211
摘要： Sheathed cutting device. An exemplary device for discreetly piercing a skin of a patient can comprise a body having a proximal end and a distal end, a cutting member attached to a plunger, the cutting member and the plunger positioned at least partially within the body, and a biasing member configured to bias the cutting member to an initial position whereby the cutting member is positioned fully within the body, wherein the plunger is slidable into the proximal end of the body, causing the cutting member to extend from the distal end of the body.

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