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1. 发明申请

US20080067514A1 FLAT PANEL DISPLAY DEVICE WITH POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR 有权
标题翻译：具有多晶硅薄膜晶体管的平板显示器件
公开(公告)号：US20080067514A1
公开(公告)日：2008-03-20
申请号：US11942460
申请日：2007-11-19
申请人： Ji-Yong PARK , Ul-Ho LEE , Jae-Bon KOO , Ki-Yong LEE , Hye-Hyang PARK
发明人： Ji-Yong PARK , Ul-Ho LEE , Jae-Bon KOO , Ki-Yong LEE , Hye-Hyang PARK
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , G02F1/13454 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.
摘要翻译：本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置，通过在驱动电路的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界，提供具有改进特性的平板显示装置像素部分和有源沟道区域。这可以通过在形成在像素部分中的开关薄膜晶体管和驱动薄膜晶体管的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界，并且通过具有不同数量的晶粒来实现包括在形成在用于驱动像素部分的每个红，绿和蓝的像素部分的薄膜晶体管的有源沟道区域中的多晶硅薄膜中的边界。此外，这可以通过在NMOS薄膜晶体管的有源沟道区域中形成的多晶硅中包含不同数量的晶界和用于形成用于平板显示器件的CMOS晶体管的PMOS薄膜晶体管来实现，从而构造薄的以获得每个晶体管的改进特性。

2. 发明申请

US20080073650A1 FABRICATION METHOD FOR POLYCRYSTALLINE SILICON THIN FILM AND APPARATUS USING THE SAME 有权
标题翻译：用于多晶硅薄膜的制造方法及其使用的装置
公开(公告)号：US20080073650A1
公开(公告)日：2008-03-27
申请号：US11949483
申请日：2007-12-03
申请人： Ji-Yong PARK , Hye-Hyang PARK
发明人： Ji-Yong PARK , Hye-Hyang PARK
IPC分类号： H01L29/04
CPC分类号： H01L21/0268 , B23K26/066 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/02691 , H01L21/2026
摘要： The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherein the mask comprises two or more of dot pattern groups in which the non-transmission pattern group is perpendicular to a scan directional axis, and the dot pattern groups are formed in a certain shape and comprise first non-transmission patterns that are not respectively arranged in a row in an axis direction perpendicular to the scan directional axis, and second non-transmission patterns that are formed in the same arrangement as the first non-transmission patterns, but are positioned in such a manner that the second non-transmission patterns are parallel to the first non-transmission patterns and vertical axis of the scan directional axis.
摘要翻译：本发明涉及一种多晶硅薄膜的制造方法，其中使用具有激光透射图案组和激光非透射图案组的混合结构的掩模通过激光使非晶硅结晶，其中该掩模包括两个或多个点其中非透射图案组垂直于扫描方向轴的图案组，并且点图案组形成为一定形状，并且包括不垂直于轴线方向的轴线方向上不分别布置成行的第一非透射图案扫描方向轴和第二非透射图案，其以与第一非透射图案相同的布置形成，但是以使得第二非透射图案平行于第一非透射图案的方式定位，以及扫描方向轴的垂直轴。

3. 发明申请

US20120064676A1 METHOD OF FABRICATING THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管的制作方法
公开(公告)号：US20120064676A1
公开(公告)日：2012-03-15
申请号：US13301032
申请日：2011-11-21
申请人： Hye-Hyang PARK , Byoung-Deog Choi , Dae-Woo Lee , Chang-Young Jeong , Moo-Jin Kim , Kyoung-Bo Kim
发明人： Hye-Hyang PARK , Byoung-Deog Choi , Dae-Woo Lee , Chang-Young Jeong , Moo-Jin Kim , Kyoung-Bo Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L27/1214 , H01L29/66757
摘要： A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.
摘要翻译：薄膜晶体管包括衬底，衬底上的半导体层，半导体层上的热氧化物层，热氧化层上的栅电极，位于半导体层的沟道区上的栅电极，中间层绝缘层，以及与半导体层电连接的源极和漏极。

4. 发明申请

US20120007084A1 DOUBLE GATE THIN-FILM TRANSISTOR AND OLED DISPLAY APPARATUS INCLUDING THE SAME 有权
标题翻译：双栅型薄膜晶体管和OLED显示装置，包括它们
公开(公告)号：US20120007084A1
公开(公告)日：2012-01-12
申请号：US13155329
申请日：2011-06-07
申请人： Hye-Hyang PARK , Ki-Ju Im , Yong-Sung Park
发明人： Hye-Hyang PARK , Ki-Ju Im , Yong-Sung Park
IPC分类号： H01L29/786 , H01L33/08
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/3262 , H01L29/78648 , H01L29/7869 , H01L51/0001
摘要： A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.
摘要翻译：包括双栅极TFT的双栅极薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置包括双栅极薄膜晶体管（TFT），其包括：基板上的第一栅电极; 在第一栅电极上的有源层; 有源层上的源极和漏极; 所述基板上的平坦化层和所述源极和漏极，并且具有对应于所述有源层的开口; 和第二栅电极。

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