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1. 发明申请

US20160168704A1 GAS INJECTORS 审中-公开
标题翻译：燃气喷射器
公开(公告)号：US20160168704A1
公开(公告)日：2016-06-16
申请号：US14963744
申请日：2015-12-09
申请人： Ji-Hoon CHOI , Young-Jin NOH , Joong-Yun RA , Jae-Young AHN , Hun-hyeong LIM
发明人： Ji-Hoon CHOI , Young-Jin NOH , Joong-Yun RA , Jae-Young AHN , Hun-hyeong LIM
IPC分类号： C23C16/455
CPC分类号： C23C16/45578 , C23C16/45546
摘要： A gas injector may comprise: a gas introduction tube configured to introduce reaction gas into a reaction tube from a gas supply source; and/or a gas distributor connected to the gas introduction tube, extending from the gas introduction tube in a direction within the reaction tube, including a plurality of ejection holes in an inner surface of the gas distributor, and having an arc shape extending in a circumferential direction of the reaction tube. The ejection holes may be spaced apart from each other in the extending direction of the gas distributor, and are configured to spray the reaction gas.
摘要翻译：气体注入器可以包括：气体引入管，其构造成将反应气体从气体供应源引入反应管中; 和/或气体分配器，其连接到气体导入管，从气体导入管沿着反应管内的方向延伸，包括在气体分配器的内表面中的多个喷射孔，并且具有在反应管的圆周方向。喷射孔可以在气体分配器的延伸方向上彼此间隔开，并且被配置为喷射反应气体。

2. 发明申请

US20080194284A1 APPARATUS AND METHOD FOR POWER ALLOCATION IN MOBILE COMMUNICATION SYSTEM 有权
标题翻译：移动通信系统中功率分配的装置和方法
公开(公告)号：US20080194284A1
公开(公告)日：2008-08-14
申请号：US12029768
申请日：2008-02-12
申请人： Ji-Hoon CHOI , Sung-Kwon Jo , Jun-Sang Lee
发明人： Ji-Hoon CHOI , Sung-Kwon Jo , Jun-Sang Lee
IPC分类号： H04B7/00
CPC分类号： H04W52/325
摘要： An apparatus and method for power allocation in a mobile communication system are provided. A transmitting method includes allocating a certain fraction of total power to a common control channel; allocating available power corresponding to the remaining fraction of the total power to remaining control channels except for the common control channel among control channels transmitted in a current time slot by considering the remaining control channels; calculating a gain value of each control channel according to power allocated to each control channel; and regulating a gain of each control channel, which is to be transmitted to one or more Access Terminals (ATs), according to the calculated gain value. Therefore, reception throughput of each control channel can be improved.
摘要翻译：提供了一种用于移动通信系统中的功率分配的装置和方法。发送方法包括：将一定比例的总功率分配给公共控制信道; 通过考虑剩余的控制信道，将在当前时隙中发送的控制信道中的除了公共控制信道之外的剩余控制信道的总功率的剩余部分中分配可用功率; 根据分配给每个控制信道的功率计算每个控制信道的增益值; 以及根据所计算的增益值来调整要发送到一个或多个接入终端（AT）的每个控制信道的增益。因此，可以提高各控制信道的接收吞吐量。

3. 发明申请

US20120153291A1 Vertical Memory Devices Including Indium And/Or Gallium Channel Doping 有权
标题翻译：包括铟和/或镓通道掺杂的垂直存储器件
公开(公告)号：US20120153291A1
公开(公告)日：2012-06-21
申请号：US13298728
申请日：2011-11-17
申请人： Jin-Gyun KIM , Ki-Hyun HWANG , Sung-Hae LEE , Ji-Hoon CHOI
发明人： Jin-Gyun KIM , Ki-Hyun HWANG , Sung-Hae LEE , Ji-Hoon CHOI
IPC分类号： H01L29/792 , H01L29/04
CPC分类号： H01L29/7926 , H01L27/11582 , H01L29/1041 , H01L29/167 , H01L29/7923
摘要： A vertical memory device may include a substrate, a first selection line on the substrate, a plurality of word lines on the first selection line, a second selection line on the plurality of word lines, and a semiconductor channel. The first selection line may be between the plurality of word lines and the substrate, and the plurality of word lines may be between the first and second selection lines. Moreover, the first and second selection lines and the plurality of word lines may be spaced apart in a direction perpendicular with respect to a surface of the substrate. The semiconductor channel may extend away from the surface of the substrate adjacent sidewalls of the first and second selection lines and the plurality of word lines. In addition, portions of the semiconductor channel adjacent the second selection line may be doped with indium and/or gallium. Related methods are also discussed.
摘要翻译：垂直存储器件可以包括衬底，衬底上的第一选择线，第一选择线上的多个字线，多个字线上的第二选择线，以及半导体沟道。第一选择线可以在多个字线和衬底之间，并且多个字线可以在第一和第二选择线之间。此外，第一选择线和第二选择线和多个字线可以在与衬底的表面垂直的方向上间隔开。半导体通道可以延伸离开衬底的与第一和第二选择线和多个字线的侧壁相邻的表面。此外，与第二选择线相邻的半导体通道的部分可以掺杂铟和/或镓。还讨论了相关方法。

4. 发明申请

US20080207249A1 APPARATUS AND METHOD FOR CONTROLLING POWER IN A WIRELESS MOBILE COMMUNICATION SYSTEM 审中-公开
标题翻译：无线移动通信系统中控制功率的装置和方法
公开(公告)号：US20080207249A1
公开(公告)日：2008-08-28
申请号：US12036508
申请日：2008-02-25
申请人： Ji-Hoon CHOI , Sung-Kwon JO
发明人： Ji-Hoon CHOI , Sung-Kwon JO
IPC分类号： H04B7/00
CPC分类号： H04W52/287 , H04W52/12 , H04W52/146 , H04W52/36
摘要： An apparatus and method for controlling power in a wireless mobile communication system are provided. The apparatus and method efficiently adjusts a threshold value in order to control closed-loop power through an outer-loop power control in a wireless mobile communication system. Accordingly, it is possible to increase cell capacity while link performance is stably maintained.
摘要翻译：提供了一种用于在无线移动通信系统中控制功率的装置和方法。该装置和方法有效地调整阈值，以便通过无线移动通信系统中的外环功率控制来控制闭环功率。因此，可以在稳定地保持连接性能的同时增加电池容量。

5. 发明申请

US20170301689A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20170301689A1
公开(公告)日：2017-10-19
申请号：US15634555
申请日：2017-06-27
申请人： Ji-Hoon CHOI , SeungHyun LIM , Sunggil KIM , HongSuk KIM , Hunhyeong LIM , Hyunjun SIM
发明人： Ji-Hoon CHOI , SeungHyun LIM , Sunggil KIM , HongSuk KIM , Hunhyeong LIM , Hyunjun SIM
IPC分类号： H01L27/115
CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157
摘要： A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.

6. 发明申请

US20170084626A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170084626A1
公开(公告)日：2017-03-23
申请号：US15239434
申请日：2016-08-17
申请人： Seulye Kim , Ji-Hoon CHOI , Dongkyum KIM , Jung Ho KIM , Jintae NOH , Eun-Young LEE
发明人： Seulye Kim , Ji-Hoon CHOI , Dongkyum KIM , Jung Ho KIM , Jintae NOH , Eun-Young LEE
IPC分类号： H01L27/115 , H01L23/528 , H01L21/768 , H01L23/522
CPC分类号： H01L27/11582 , H01L21/76831 , H01L23/485 , H01L27/11565
摘要： A three-dimensional semiconductor device includes a plurality of stack structures extending in one direction on a substrate and spaced apart from each other, a plurality of vertical structures penetrating the stack structures, a common source plug between the stack structures that are adjacent to each other and extending in parallel to the stack structures, and a spacer structure at each side of the common source plug. The stack structure has a sidewall defining recess regions vertically spaced apart from each other. The spacer structure covers sidewalls of the stack structures. The spacer structure includes an insulating spacer and a protection spacer. The insulating spacer fills the recess regions of the stack structure and includes a surface having grooves. The protection spacer fills the grooves of the surface of the insulating spacer and has a substantially flat surface.

7. 发明申请

US20170033044A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20170033044A1
公开(公告)日：2017-02-02
申请号：US15160137
申请日：2016-05-20
申请人： Ji-Hoon CHOI , Jung Ho KIM , Dongkyum KIM , Seulye KIM , Jintae NOH , Hyun-Jin SHIN , SeungHyun LIM
发明人： Ji-Hoon CHOI , Jung Ho KIM , Dongkyum KIM , Seulye KIM , Jintae NOH , Hyun-Jin SHIN , SeungHyun LIM
IPC分类号： H01L23/522 , G11C8/10 , H01L23/532 , H01L21/768 , H01L27/115 , H01L23/528
摘要： A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.
摘要翻译：提供半导体器件。半导体器件包括堆叠结构，其包括交替堆叠在衬底上的绝缘图案和电极结构以及垂直穿过堆叠结构的垂直沟道结构。每个电极结构包括具有第一侧壁和与第一侧壁相对的第二侧壁的导电图案，第一侧壁上的第一蚀刻防止图案和第二侧壁上的第二蚀刻防止图案。

8. 发明申请

US20130273704A1 METHODS OF FORMING A POLYSILICON LAYER AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：形成多晶硅层的方法和制造半导体器件的方法
公开(公告)号：US20130273704A1
公开(公告)日：2013-10-17
申请号：US13716859
申请日：2012-12-17
申请人： Jung-Geun JEE , Jin-Gyun KIM , Ji-Hoon CHOI , Ki-Hyun HWANG
发明人： Jung-Geun JEE , Jin-Gyun KIM , Ji-Hoon CHOI , Ki-Hyun HWANG
IPC分类号： H01L21/36 , H01L29/66
CPC分类号： H01L21/36 , C23C16/24 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02494 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02595 , H01L21/0262 , H01L21/02639 , H01L21/28525 , H01L21/28556 , H01L21/76876 , H01L21/76877 , H01L27/10888 , H01L27/11582 , H01L29/66666
摘要： A method of forming a polysilicon layer includes providing a silicon precursor onto an object loaded in a process chamber to form a seed layer. The silicon precursor includes a nitrogen containing silicon precursor and a chlorine containing silicon precursor. The method further includes providing a silicon source on the seed layer.
摘要翻译：形成多晶硅层的方法包括将硅前体提供到加载在处理室中的物体上以形成种子层。硅前体包括含氮的硅前体和含氯的硅前体。该方法还包括在种子层上提供硅源。

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