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1. 发明申请

US20110129528A1 SUSTAINED-RELEASE CHITOSAN CAPSULES COMPRISING CHITOSAN AND PHYTIC ACID 审中-公开
标题翻译：持续释放包含壳聚糖和植酸的壳聚糖囊
公开(公告)号：US20110129528A1
公开(公告)日：2011-06-02
申请号：US12674365
申请日：2008-05-29
申请人： Ji Yong Park , Chan Min Jeong , Min Kyung Lee , Sung Won Choi , Young Hee Cho , Hoon Ok Jeong
发明人： Ji Yong Park , Chan Min Jeong , Min Kyung Lee , Sung Won Choi , Young Hee Cho , Hoon Ok Jeong
IPC分类号： A61K9/48 , A61K47/36 , A61K31/7088 , A61K38/02 , A61K31/70 , A61K36/00 , A61K35/66 , A61K35/76 , C08B37/08 , A61K38/38 , A61K38/28 , A61K38/27 , A61P3/02 , A23L1/00 , A23L1/30 , A23L1/302 , A23P1/04
CPC分类号： A61K31/70 , A61K9/0053 , A61K9/5036 , A61K31/7088
摘要： The present invention relates to a chitosan capsule in which a soluble active ingredient is encapsulated in a matrix containing chitosan and phytic acid; a cross-linking method and materials capable of being used in preparing the capsule; and pharmaceutical, food and cosmetic compositions comprising the capsule. The chitosan capsule according to the present invention is prepared via ionic gelation of chitosan as a biodegradable polymer with phytic acid capable of rapidly and effectively forming a cross-linking reaction with the chitosan polymer. The capsule of the present invention shows high encapsulation efficiency for a soluble active ingredient and protects the soluble active ingredient from being damaged in a digestive tract, resulting in improving an in vivo delivery efficiency of a physiologically active material. Further, since the capsule of the present invention has a pH-dependent sustained-release mechanism which can minimize the release of a soluble active ingredient in the stomach and gradually release in the intestine, it is possible to regulate sustained-release of a soluble active ingredient.
摘要翻译：本发明涉及壳聚糖胶囊，其中将可溶性活性成分包封在含有壳聚糖和植酸的基质中; 能够用于制备胶囊的交联方法和材料; 以及包含胶囊的药物，食品和化妆品组合物。根据本发明的壳聚糖胶囊通过壳聚糖作为可生物降解聚合物的离子凝胶化制备，其中植酸能够快速且有效地与壳聚糖聚合物形成交联反应。本发明的胶囊对可溶性活性成分显示出高的包封效率，并保护可溶性活性成分在消化道中的损伤，从而提高生理活性物质的体内递送效率。此外，由于本发明的胶囊具有pH依赖性缓释机制，其可以使可溶性活性成分在胃中的释放最小化并在肠中逐渐释放，因此可以调节可溶性活性物质的缓释成分。

2. 再颁专利

USRE43765E1 Method for fabricating semiconductor device having trench isolation layer 失效
标题翻译：制造具有沟槽隔离层的半导体器件的方法
公开(公告)号：USRE43765E1
公开(公告)日：2012-10-23
申请号：US13363073
申请日：2012-01-31
申请人： Hyo Seob Yoon , Woo Jin Kim , Ok Min Moon , Ji Yong Park
发明人： Hyo Seob Yoon , Woo Jin Kim , Ok Min Moon , Ji Yong Park
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L27/105 , H01L27/1052
摘要： A method for fabricating a device isolation structure of a semiconductor device includes the steps of forming a pad oxide layer and a pad nitride layer over a semiconductor substrate including a cell region and a dummy region, etching a portion of the pad nitride layer, the pad oxide layer and the semiconductor substrate to form a trench, forming a sidewall oxide layer over the sidewalls of the trench; removing the sidewall oxide layer in the dummy region, forming a silicon nitride layer over the sidewalls of the sidewall oxide layer both in the cell region and in the dummy region, filling the trench with an insulating layer, polishing the insulating layer to expose the pad nitride layer, and removing the pad nitride layer.
摘要翻译：一种制造半导体器件的器件隔离结构的方法包括以下步骤：在包括单元区域和虚拟区域的半导体衬底上形成衬垫氧化物层和衬垫氮化物层，蚀刻衬垫氮化物层的一部分，衬垫氧化物层和半导体衬底以形成沟槽，在沟槽的侧壁上形成侧壁氧化物层; 去除虚设区域中的侧壁氧化物层，在单元区域和虚拟区域中的侧壁氧化物层的侧壁上形成氮化硅层，用绝缘层填充沟槽，抛光绝缘层以露出衬垫氮化物层，以及去除衬垫氮化物层。

3. 发明授权

US07655535B2 Method for fabricating semiconductor device having trench isolation layer 有权
标题翻译：制造具有沟槽隔离层的半导体器件的方法
公开(公告)号：US07655535B2
公开(公告)日：2010-02-02
申请号：US11647929
申请日：2006-12-29
申请人： Hyo Seob Yoon , Woo Jin Kim , Ok Min Moon , Ji Yong Park
发明人： Hyo Seob Yoon , Woo Jin Kim , Ok Min Moon , Ji Yong Park
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L27/105 , H01L27/1052
摘要： A method for fabricating a device isolation structure of a semiconductor device includes the steps of forming a pad oxide layer and a pad nitride layer over a semiconductor substrate including a cell region and a dummy region, etching a portion of the pad nitride layer, the pad oxide layer and the semiconductor substrate to form a trench, forming a sidewall oxide layer over the sidewalls of the trench; removing the sidewall oxide layer in the dummy region, forming a silicon nitride layer over the sidewalls of the sidewall oxide layer both in the cell region and in the dummy region, filling the trench with an insulating layer, polishing the insulating layer to expose the pad nitride layer, and removing the pad nitride layer.
摘要翻译：一种制造半导体器件的器件隔离结构的方法包括以下步骤：在包括单元区域和虚拟区域的半导体衬底上形成衬垫氧化物层和衬垫氮化物层，蚀刻衬垫氮化物层的一部分，衬垫氧化物层和半导体衬底以形成沟槽，在沟槽的侧壁上形成侧壁氧化物层; 去除虚设区域中的侧壁氧化物层，在单元区域和虚拟区域中的侧壁氧化物层的侧壁上形成氮化硅层，用绝缘层填充沟槽，抛光绝缘层以露出衬垫氮化物层，以及去除衬垫氮化物层。

4. 发明授权

US11994334B2 Supercooling freezer box 有权
公开(公告)号：US11994334B2
公开(公告)日：2024-05-28
申请号：US17622889
申请日：2019-06-25
申请人： Ji Yong Park
发明人： Han Seok Kim , Ji Yong Park
IPC分类号： F25D17/08 , F25D11/00 , F25D17/04 , F25D17/06 , F25D21/08 , F25D25/02
CPC分类号： F25D17/08 , F25D11/006 , F25D17/045 , F25D17/067 , F25D21/08 , F25D25/028 , F25D2317/061 , F25D2317/067 , F25D2317/0681
摘要： A supercooling refrigerator (1000) including: a refrigerator body (100); a door (200) for opening and closing one side of the refrigerator body (100); an accommodating portion (400) provided inside the refrigerator body (100) and seated with an object (M) to be stored; a cooling duct (600) including a fan for taking in air in the refrigerator body (100) and discharging the air, and an evaporator (630) for cooling the air discharged from the fan; and a cool air supply duct (700) formed with a cool air discharge port (710) through which the air cooled through the cooling duct (600) is discharged into the refrigerator body (100), the fan being a cross flow fan (620) including a plurality of discs (622), and a plurality of blades (623) disposed between the discs (622) along outer circumferential surfaces of the discs (622).

5. 发明授权

US08314428B2 Thin film transistor with LDD/offset structure 有权
标题翻译：具LDD /偏移结构的薄膜晶体管
公开(公告)号：US08314428B2
公开(公告)日：2012-11-20
申请号：US10734162
申请日：2003-12-15
申请人： Ji Yong Park , Ki Yong Lee , Hye Hyang Park
发明人： Ji Yong Park , Ki Yong Lee , Hye Hyang Park
IPC分类号： H01L27/14
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A thin film transistor including a lightly doped drain (LDD) region or offset region, wherein the thin film transistor is formed so that primary crystal grain boundaries of a polysilicon substrate are not positioned in the LDD or offset region.
摘要翻译：一种薄膜晶体管，包括轻掺杂漏极（LDD）区域或偏移区域，其中所述薄膜晶体管形成为使得多晶硅衬底的初晶晶界不位于LDD或偏移区域中。

6. 发明申请

US20110226866A1 AIR FRESHENER GENERATOR FOR VEHICLE AIR CONDITIONING APPARATUS 有权
标题翻译：用于汽车空调设备的AIR FRESHENER发电机
公开(公告)号：US20110226866A1
公开(公告)日：2011-09-22
申请号：US13123825
申请日：2009-10-14
申请人： Jae Ho Kim , Yong Jun Jee , Eun Gi Min , Young Ha Jeon , Dong Suk Lee , Ki Hong Kim , Ji Yong Park
发明人： Jae Ho Kim , Yong Jun Jee , Eun Gi Min , Young Ha Jeon , Dong Suk Lee , Ki Hong Kim , Ji Yong Park
IPC分类号： A61L9/04
CPC分类号： A61L9/12 , A61L9/125 , B60H3/0021 , B60H2003/0042 , B60H2003/0064
摘要： The invention provides an air freshener generating apparatus of a vehicle air conditioning system adapted to generate and discharge different sorts of air fresheners filled within a cartridge into an interior of a vehicle. The air freshener generating apparatus of a vehicle air conditioning system includes: a body in which an inlet pipe is communicated with an outlet pipe and on which ball plungers are mounted at intervals on a circumferential surface thereof along circumferential lines on which the inlet pipe and the outlet pipe are located respectively; a cartridge coupled to the body and having at least one partition wall such that at least two air fresheners are filled within spaces defined by the partition wall, the cartridge having through-holes at portions of the cartridge corresponding to the spaces defined by the partition wall; and an actuator configured to rotate the cartridge a predetermined angle. When the cartridge is rotated the predetermined angle, air is supplied through the through-hole facing the inlet pipe such that one air freshener is discharged through the through-hole facing the outlet pipe without being mixed with another air freshener.
摘要翻译：本发明提供了一种车辆空调系统的空气清新剂生成装置，其适用于将填充在筒内的不同种类的空气清新剂排放到车辆的内部。车辆用空气调节系统的空气清新器生成装置具备：入口管与出口管连通的主体，并且在其周面上沿着圆周方向以圆周方向安装有多个球柱塞，其中入口管和出口管分别定位; 一个联接到该主体并具有至少一个分隔壁的盒，使得至少两个空气清新剂填充在由分隔壁限定的空间内，该盒在该盒的部分处具有对应于由隔壁限定的空间的通孔 ; 以及致动器，其构造成使所述盒旋转预定角度。当墨盒旋转预定角度时，通过面向入口管的通孔供应空气，使得一个空气清新剂通过面向出口管的通孔而排出，而不与另一空气清新剂混合。

7. 发明授权

US07777226B2 Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same 有权
标题翻译：多晶硅薄膜，其制造方法和薄膜晶体管，而不依赖于使用其制造的有源沟道
公开(公告)号：US07777226B2
公开(公告)日：2010-08-17
申请号：US11201326
申请日：2005-08-11
申请人： Ji Yong Park , Hye Hyang Park
发明人： Ji Yong Park , Hye Hyang Park
IPC分类号： H01L31/036
CPC分类号： H01L21/02532 , B23K26/073 , B23K26/0732 , B23K26/0738 , H01L21/0268 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/78672 , H01L29/78696 , Y10S438/945
摘要： A polycrystalline silicon thin film to be used in display devices, the thin film comprising adjacent primary grain boundaries that are not parallel to each other and do not contact each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μm2, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.
摘要翻译：一种用于显示装置的多晶硅薄膜，该薄膜包括彼此不平行且不彼此接触的相邻一次晶粒边界，其中由一次晶界边界的面积大于1μm2，多晶硅薄膜的制造方法以及使用该方法制造的薄膜晶体管。

8. 发明申请

US20080141351A1 LOGIN PROCEDURE USING IMAGE CODE 审中-公开
标题翻译：使用图像代码登录程序
公开(公告)号：US20080141351A1
公开(公告)日：2008-06-12
申请号：US11945175
申请日：2007-11-26
申请人： Ji Yong Park
发明人： Ji Yong Park
IPC分类号： G06F21/00
CPC分类号： H04L63/083 , G06F21/31 , G06F21/36 , H04W12/06 , H04W88/02
摘要： A method of generating an image code includes receiving a site identification (ID) of an access site, receiving a user ID and a password for accessing the access site, and generating an image code for establishing a login to the access site based upon the user ID and the password.
摘要翻译：一种生成图像代码的方法包括接收访问站点的站点标识（ID），接收访问访问站点的用户ID和密码，以及基于用户生成用于建立登录到访问站点的图像代码 ID和密码。

9. 发明申请

US20080132073A1 Oxide Pattern Forming Method and Patterning Method of Semiconductor Device 失效
标题翻译：半导体器件的氧化物图案形成方法和图案化方法
公开(公告)号：US20080132073A1
公开(公告)日：2008-06-05
申请号：US11770983
申请日：2007-06-29
申请人： Hyo Geun Yoon , Woo Jin Kim , Dong Joo Kim , Ji Yong Park , Yong Soo Jung , Geun Min Choi , Young Wok Song , Sang Hyun Lee
发明人： Hyo Geun Yoon , Woo Jin Kim , Dong Joo Kim , Ji Yong Park , Yong Soo Jung , Geun Min Choi , Young Wok Song , Sang Hyun Lee
IPC分类号： H01L21/311
CPC分类号： H01L21/3086 , H01L21/3081 , H01L21/31111 , H01L21/31155
摘要： An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0×1016 atoms/cm2 onto the oxide layer in a given region, and wet-etching the oxide layer in the remaining region where the boron ions are not implanted.
摘要翻译：氧化物图案形成方法包括在半导体衬底上形成氧化物层，在给定的氧化物层中将不少于1.0×10 16原子/ cm 2的硼离子注入到氧化物层上区域，并且在没有植入硼离子的剩余区域中湿法蚀刻氧化物层。

10. 发明授权

US11142922B2 Maisonette type apartment house design structure for reducing noise between floors and allowing easy remodeling 有权
公开(公告)号：US11142922B2
公开(公告)日：2021-10-12
申请号：US17040797
申请日：2019-04-02
申请人： Dae Yeung Park , Ji Yong Park
发明人： Dae Yeung Park , Ji Yong Park
IPC分类号： E04H1/04 , E04B1/348 , E04B1/86 , E04B5/02 , E04C3/30
摘要： The present invention relates to a design structure of an apartment house in which a plurality of apartment units, each of which is a maisonette in which two floors including an upper floor and a lower floor are combined into a single apartment unit, are repeatedly arranged in vertical and horizontal directions, wherein, in the design structure, each apartment unit has a living room disposed on the upper floor and a plurality of bedrooms disposed on the lower floor, double pillars spaced apart from each other are installed on side boundaries of adjacent apartment units, the double pillars include a pair of first pillars disposed inside an apartment unit and a pair of second pillars disposed outside the apartment unit and disposed inside another apartment unit adjacent thereto, a first beam member, which serves as a structure carrying a load, is connected to and installed at the first pillar, a second beam member, which serves as a structure carrying a load, is connected to and installed at the second pillar, and a double pillar connecting beam configured to connect the first pillar and the second pillar is additionally provided on a side surface of a slab of the lower floor.

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