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1. 发明申请

US20120280346A1 SENSOR STRUCTURE FOR OPTICAL PERFORMANCE ENHANCEMENT 有权
标题翻译：用于光学性能增强的传感器结构
公开(公告)号：US20120280346A1
公开(公告)日：2012-11-08
申请号：US13549792
申请日：2012-07-16
申请人： Jhy-Ming Hung , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang
发明人： Jhy-Ming Hung , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14632
摘要： The present disclosure provides various embodiments of an image sensor device. An exemplary image sensor device includes an image sensing region disposed in a substrate; a multilayer interconnection structure disposed over the substrate; and a color filter formed in the multilayer interconnection structure and aligned with the image sensing region. The color filter has a length and a width, where the length is greater than the width.
摘要翻译：本公开提供了图像传感器装置的各种实施例。示例性图像传感器装置包括设置在基板中的图像感测区域; 布置在所述基板上的多层互连结构; 以及形成在多层互连结构中并与图像感测区域对准的滤色器。滤色片具有长度和宽度，其长度大于宽度。

2. 发明授权

US08222710B2 Sensor structure for optical performance enhancement 有权
标题翻译：用于光学性能增强的传感器结构
公开(公告)号：US08222710B2
公开(公告)日：2012-07-17
申请号：US12483485
申请日：2009-06-12
申请人： Jhy-Ming Hung , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang
发明人： Jhy-Ming Hung , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang
IPC分类号： G02B6/00
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14632
摘要： The present disclosure provides an image sensor semiconductor device. The image sensor semiconductor device includes an image sensor disposed in a semiconductor substrate, an inter-level dielectric (ILD) layer disposed on the semiconductor substrate, inter-metal-dielectric (IMD) layers and multi-layer interconnects (MLI) formed on the ILD layer, and a color filter formed in at least one of the IMD layers and overlying the image sensor.
摘要翻译：本公开提供了一种图像传感器半导体器件。图像传感器半导体器件包括设置在半导体衬底中的图像传感器，设置在半导体衬底上的层间电介质层（ILD）层，金属间电介质层（IMD）层和形成在半导体衬底上的多层互连（MLI） ILD层和形成在IMD层中的至少一个并覆盖图像传感器的滤色器。

3. 发明申请

US20090315131A1 SENSOR STRUCTURE FOR OPTICAL PERFORMANCE ENHANCEMENT 有权
标题翻译：用于光学性能增强的传感器结构
公开(公告)号：US20090315131A1
公开(公告)日：2009-12-24
申请号：US12483485
申请日：2009-06-12
申请人： Jhy-Ming Hung , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang
发明人： Jhy-Ming Hung , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14687 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14632
摘要： The present disclosure provides an image sensor semiconductor device. The image sensor semiconductor device includes an image sensor disposed in a semiconductor substrate, an inter-level dielectric (ILD) layer disposed on the semiconductor substrate, inter-metal-dielectric (IMD) layers and multi-layer interconnects (MLI) formed on the ILD layer, and a color filter formed in at least one of the IMD layers and overlying the image sensor.
摘要翻译：本公开提供了一种图像传感器半导体器件。图像传感器半导体器件包括设置在半导体衬底中的图像传感器，设置在半导体衬底上的层间电介质层（ILD）层，金属间电介质层（IMD）层和形成在半导体衬底上的多层互连（MLI） ILD层和形成在IMD层中的至少一个并覆盖图像传感器的滤色器。

4. 发明申请

US20130020662A1 NOVEL CMOS IMAGE SENSOR STRUCTURE 有权
标题翻译：新型CMOS图像传感器结构
公开(公告)号：US20130020662A1
公开(公告)日：2013-01-24
申请号：US13185204
申请日：2011-07-18
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
IPC分类号： H01L31/02
CPC分类号： H01L27/146 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供其中设置有辐射感测区域的第一基板。该方法包括提供具有氢注入层的第二衬底，氢注入层将第二衬底分成第一部分和第二部分。该方法包括将第二衬底的第一部分接合到第一衬底。该方法包括在接合之后，去除第二衬底的第二部分。该方法包括在去除之后，在第二衬底的第一部分中形成一个或多个微电子器件。该方法包括在第二基板的第一部分上形成互连结构，所述互连结构包含电耦合到微电子器件的互连特征。

5. 发明授权

US08227288B2 Image sensor and method of fabricating same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US08227288B2
公开(公告)日：2012-07-24
申请号：US12413752
申请日：2009-03-30
申请人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
发明人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供具有前侧和后侧的装置基板。该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。该方法还包括在器件衬底的背面上形成透明层。该方法还包括在透明层中形成开口，该开口与隔离结构对准。该方法还包括用不透明材料填充开口。

6. 发明申请

US20110298072A1 RIDGE STRUCTURE FOR BACK SIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：背面照明图像传感器的RIDGE结构
公开(公告)号：US20110298072A1
公开(公告)日：2011-12-08
申请号：US12794101
申请日：2010-06-04
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的基板。图像传感器包括设置在基板中的第一和第二放射线检测装置。第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。第一和第二脊各自具有第一折射率值。第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

7. 发明申请

US20100213560A1 PAD DESIGN FOR BACKSIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：背面照明图像传感器的PAD设计
公开(公告)号：US20100213560A1
公开(公告)日：2010-08-26
申请号：US12708167
申请日：2010-02-18
申请人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
发明人： Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/18
CPC分类号： H01L27/14636 , H01L23/481 , H01L27/14621 , H01L27/1464 , H01L27/14683
摘要： A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.
摘要翻译：半导体图像传感器装置包括第一和第二半导体衬底。像素阵列和控制电路形成在第一基板的第一表面中。在第一基板的第一表面上形成互连层，并将控制电路电连接到像素阵列。顶部导电层形成在互连层上，以经由互连层与至少一个控制电路或像素阵列电连接。第二基板的表面接合到顶部导电层。导电硅通孔（TSV）通过第二衬底，并且与顶部导电层具有电连接性。端子形成在第二基板的相对表面上，并电连接到TSV。

8. 发明申请

US20100184242A1 METHOD OF IMPLANTATION 有权
标题翻译：植入方法
公开(公告)号：US20100184242A1
公开(公告)日：2010-07-22
申请号：US12355211
申请日：2009-01-16
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Pao-Tung Chen , Wen-De Wang , Jyh-Ming Hung
IPC分类号： H01L21/76 , H01L31/02 , H01L31/0224
CPC分类号： H01L21/76237 , H01L21/2652 , H01L27/0629 , H01L27/1463 , H01L27/14683
摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.
摘要翻译：提供了将掺杂剂离子注入集成电路的方法。该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口并且通过所述开口植入多个掺杂剂以形成隔离特征。

9. 发明授权

US09048162B2 CMOS image sensors and methods for forming the same 有权
标题翻译： CMOS图像传感器及其形成方法
公开(公告)号：US09048162B2
公开(公告)日：2015-06-02
申请号：US13615071
申请日：2012-09-13
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
IPC分类号： H01L31/02 , H01L27/146 , H01L31/18 , H01L31/103
CPC分类号： H01L31/18 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14689 , H01L31/02 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.
摘要翻译：一种器件包括二极管，其包括半导体衬底中的第一，第二和第三掺杂区域。第一掺杂区域是第一导电类型，并具有第一杂质浓度。第二掺杂区域是第一导电类型，并且具有低于第一杂质浓度的第二杂质浓度。第二掺杂区域包围第一掺杂区域。第三掺杂区域具有与第一导电类型相反的第二导电类型，其中第三掺杂区域与第一掺杂区域的一部分和第二掺杂区域的一部分重叠。

10. 发明授权

US08981510B2 Ridge structure for back side illuminated image sensor 有权
标题翻译：背面照明图像传感器的脊结构
公开(公告)号：US08981510B2
公开(公告)日：2015-03-17
申请号：US12794101
申请日：2010-06-04
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Keng-Yu Chou , Wen-De Wang , Pao-Tung Chen
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的基板。图像传感器包括设置在基板中的第一和第二放射线检测装置。第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。第一和第二脊各自具有第一折射率值。第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

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