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1. 发明授权

US08338295B2 Method of fabricating metal interconnection and method of fabricating image sensor using the same 有权
标题翻译：制造金属互连的方法及使用其制造图像传感器的方法
公开(公告)号：US08338295B2
公开(公告)日：2012-12-25
申请号：US13206703
申请日：2011-08-10
申请人： Jeong-Ho Lee , Young-Hoon Park , Sang-Il Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
发明人： Jeong-Ho Lee , Young-Hoon Park , Sang-Il Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
IPC分类号： H01L21/441
CPC分类号： H01L21/76814 , H01L21/76825 , H01L21/76838 , H01L27/14632 , H01L27/14636 , H01L27/14687
摘要： A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
摘要翻译：提供了一种制造金属互连的方法和使用其制造图像传感器的方法。一种制造金属互连的方法，包括在衬底上形成层间电介质层，在层间电介质层中形成互连形成区，在互连形成区形成之后对衬底进行紫外（UV）处理，并形成金属互连在互连形成区域中。

2. 发明授权

US08026171B2 Method of fabricating metal interconnection and method of fabricating image sensor using the same 有权
标题翻译：制造金属互连的方法及使用其制造图像传感器的方法
公开(公告)号：US08026171B2
公开(公告)日：2011-09-27
申请号：US12274040
申请日：2008-11-19
申请人： Jeong-Ho Lee , Young-Hoon Park , Sang-Il Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
发明人： Jeong-Ho Lee , Young-Hoon Park , Sang-Il Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
IPC分类号： H01L21/4763
CPC分类号： H01L21/76814 , H01L21/76825 , H01L21/76838 , H01L27/14632 , H01L27/14636 , H01L27/14687
摘要： A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
摘要翻译：提供了一种制造金属互连的方法和使用其制造图像传感器的方法。一种制造金属互连的方法，包括在衬底上形成层间电介质层，在层间电介质层中形成互连形成区，在互连形成区形成之后对衬底进行紫外（UV）处理，并形成金属互连在互连形成区域中。

3. 发明申请

US20110294288A1 METHOD OF FABRICATING METAL INTERCONNECTION AND METHOD OF FABRICATING IMAGE SENSOR USING THE SAME 有权
标题翻译：金属互连的制造方法及使用其制造图像传感器的方法
公开(公告)号：US20110294288A1
公开(公告)日：2011-12-01
申请号：US13206703
申请日：2011-08-10
申请人： Jeong-Ho LEE , Young-Hoon Park , Sang-Il Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
发明人： Jeong-Ho LEE , Young-Hoon Park , Sang-Il Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/76825 , H01L21/76838 , H01L27/14632 , H01L27/14636 , H01L27/14687
摘要： A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
摘要翻译：提供了一种制造金属互连的方法和使用其制造图像传感器的方法。一种制造金属互连的方法，包括在衬底上形成层间电介质层，在层间电介质层中形成互连形成区，在互连形成区形成之后对衬底进行紫外（UV）处理，并形成金属互连在互连形成区域中。

4. 发明授权

US08003429B2 Method of fabricating image sensor 有权
标题翻译：图像传感器的制作方法
公开(公告)号：US08003429B2
公开(公告)日：2011-08-23
申请号：US12313067
申请日：2008-11-17
申请人： Jeong-Ho Lee , Sang-Il Jung , Young-Hoon Park , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
发明人： Jeong-Ho Lee , Sang-Il Jung , Young-Hoon Park , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
IPC分类号： H01L31/18
CPC分类号： H01L27/14687 , H01L27/14643
摘要： A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.
摘要翻译：制造图像传感器的方法包括在基板上形成光电转换装置，并在基板上形成介电层结构。电介质层结构包括位于多层层间电介质层之间的多层层间电介质层和多层金属互连。形成穿透光电转换装置上的多层层间电介质层的空腔。在其上形成有空腔的基板上进行热处理。

5. 发明申请

US20090130792A1 Method of fabricating image sensor 有权
标题翻译：图像传感器的制作方法
公开(公告)号：US20090130792A1
公开(公告)日：2009-05-21
申请号：US12313067
申请日：2008-11-17
申请人： Jeong-Ho Lee , Sang-ll Jung , Young-Hoon Park , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
发明人： Jeong-Ho Lee , Sang-ll Jung , Young-Hoon Park , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
IPC分类号： H01L31/18
CPC分类号： H01L27/14687 , H01L27/14643
摘要： A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.
摘要翻译：制造图像传感器的方法包括在基板上形成光电转换装置，并在基板上形成电介质层结构。电介质层结构包括位于多层层间电介质层之间的多层层间电介质层和多层金属互连。形成穿透光电转换装置上的多层层间电介质层的空腔。在其上形成有空腔的基板上进行热处理。

6. 发明申请

US20090137111A1 METHOD OF FABRICATING METAL INTERCONNECTION AND METHOD OF FABRICATING IMAGE SENSOR USING THE SAME 有权
标题翻译：金属互连的制造方法及使用其制造图像传感器的方法
公开(公告)号：US20090137111A1
公开(公告)日：2009-05-28
申请号：US12274040
申请日：2008-11-19
申请人： JEONG-HO LEE , Yonng-Hoon Park , Sang-II Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
发明人： JEONG-HO LEE , Yonng-Hoon Park , Sang-II Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
IPC分类号： H01L21/3205
CPC分类号： H01L21/76814 , H01L21/76825 , H01L21/76838 , H01L27/14632 , H01L27/14636 , H01L27/14687
摘要： A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
摘要翻译：提供了一种制造金属互连的方法和使用其制造图像传感器的方法。一种制造金属互连的方法，包括在衬底上形成层间电介质层，在层间电介质层中形成互连形成区，在互连形成区形成之后对衬底进行紫外（UV）处理，并形成金属互连在互连形成区域中。

7. 发明授权

US08068157B2 Image sensor with wide operating range 有权
标题翻译：图像传感器，工作范围宽
公开(公告)号：US08068157B2
公开(公告)日：2011-11-29
申请号：US12218287
申请日：2008-07-14
申请人： Sang-Il Jung , Min-Young Jung
发明人： Sang-Il Jung , Min-Young Jung
IPC分类号： H04N3/14 , H01L27/92 , H01L29/26 , H01L29/02
CPC分类号： H04N5/357 , H01L27/14609 , H01L27/14689 , H04N5/374
摘要： An image sensor includes a photoelectric converter, a source-follower transistor, and a selection transistor. The photoelectric converter generates electric charge in response to received light, and the electric charge varies a voltage of a detection node. The source-follower transistor is coupled between the detection node and an output node and has a first threshold voltage. The selection transistor is coupled between the source-follower transistor and a voltage node with a power supply voltage or a boosted voltage applied thereon, and has a second threshold voltage with a magnitude that is less than a magnitude of the first threshold voltage such that the source-follower transistor operates in saturation.
摘要翻译：图像传感器包括光电转换器，源极跟随器晶体管和选择晶体管。光电转换器响应于接收到的光而产生电荷，电荷改变检测节点的电压。源极 - 跟随器晶体管耦合在检测节点和输出节点之间并且具有第一阈值电压。选择晶体管被耦合在源极跟随器晶体管和具有施加在其上的电源电压或升压电压的电压节点之间，并且具有小于第一阈值电压的幅度的幅度的第二阈值电压，使得源极跟随器晶体管工作在饱和状态。

8. 发明申请

US20090027529A1 Image sensor with wide operating range 有权
标题翻译：图像传感器，工作范围宽
公开(公告)号：US20090027529A1
公开(公告)日：2009-01-29
申请号：US12218287
申请日：2008-07-14
申请人： Sang-Il Jung , Min-Young Jung
发明人： Sang-Il Jung , Min-Young Jung
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H01L27/14609 , H01L27/14689 , H04N5/374
摘要： An image sensor includes a photoelectric converter, a source-follower transistor, and a selection transistor. The photoelectric converter generates electric charge in response to received light, and the electric charge varies a voltage of a detection node. The source-follower transistor is coupled between the detection node and an output node and has a first threshold voltage. The selection transistor is coupled between the source-follower transistor and a voltage node with a power supply voltage or a boosted voltage applied thereon, and has a second threshold voltage with a magnitude that is less than a magnitude of the first threshold voltage such that the source-follower transistor operates in saturation.
摘要翻译：图像传感器包括光电转换器，源极跟随器晶体管和选择晶体管。光电转换器响应于接收到的光而产生电荷，电荷改变检测节点的电压。源极 - 跟随器晶体管耦合在检测节点和输出节点之间并且具有第一阈值电压。选择晶体管被耦合在源极跟随器晶体管和具有施加在其上的电源电压或升压电压的电压节点之间，并且具有小于第一阈值电压的幅度的幅度的第二阈值电压，使得源极跟随器晶体管工作在饱和状态。

9. 发明授权

US08334128B2 Probiotic spore-forming lactic acid bacteria of Sporolactobacillus vineae strain KCTC 11493BP 有权
标题翻译：酿酒酵母菌株KCTC 11493BP的益生菌孢子形成乳酸菌
公开(公告)号：US08334128B2
公开(公告)日：2012-12-18
申请号：US12505338
申请日：2009-07-17
申请人： Young-Hyo Chang , Min-Young Jung , In-Soon Park
发明人： Young-Hyo Chang , Min-Young Jung , In-Soon Park
IPC分类号： A01N63/00 , C12N1/12 , C12N1/20
CPC分类号： C12R1/01 , A21D8/045 , A23C9/12 , A23G3/364 , A23G4/12 , A23K10/18 , A23L21/25 , A23L33/135 , A23V2002/00 , A61K35/74 , Y02A50/471 , A23V2200/3204
摘要： The present invention relates to the novel Sporolactobacillus vineae SL153 strain (Accession No: KCTC 11493BP) having probiotic activity, precisely Sporolactobacillus vineae SL153 having antimicrobial activity against Vibrio genus pathogenic microorganisms and other pathogens. The Sporolactobacillus vineae SL153 strain of the present invention has excellent intestinal adherence and growth inhibitory effect on pathogenic microorganisms including Vibrio genus microorganisms, so that it can be effectively used as a composition for the prevention and treatment of disease caused by pathogenic microorganisms.
摘要翻译：本发明涉及具有益生菌活性的具有抗弧菌属病原微生物和其他病原体的抗微生物活性的具有益生菌活性的新型孢子乳杆菌葡萄藤SL153菌株（登录号：KCTC 11493BP）。本发明的芽孢杆菌属SL153菌株对包括弧菌属微生物在内的病原微生物具有优异的肠粘连和生长抑制作用，因此可有效地用作预防和治疗病原微生物引起的疾病的组合物。

10. 发明申请

US20110014166A1 Probiotics Spore-forming Lactic Acid Bacteria SL153 有权
标题翻译：益生菌孢子形成乳酸菌SL153
公开(公告)号：US20110014166A1
公开(公告)日：2011-01-20
申请号：US12505338
申请日：2009-07-17
申请人： Young-Hyo CHANG , Min-Young Jung , In-Soon Park
发明人： Young-Hyo CHANG , Min-Young Jung , In-Soon Park
IPC分类号： A61K45/00 , C12N1/20 , A61P1/14
CPC分类号： C12R1/01 , A21D8/045 , A23C9/12 , A23G3/364 , A23G4/12 , A23K10/18 , A23L21/25 , A23L33/135 , A23V2002/00 , A61K35/74 , Y02A50/471 , A23V2200/3204
摘要： The present invention relates to the novel Sporolactobacillus vineae SL153 strain (Accession No: KCTC 11493BP) having probiotic activity, precisely Sporolactobacillus vineae SL153 having antimicrobial activity against Vibrio genus pathogenic microorganisms and other pathogens. The Sporolactobacillus vineae SL153 strain of the present invention has excellent intestinal adherence and growth inhibitory effect on pathogenic microorganisms including Vibrio genus microorganisms, so that it can be effectively used as a composition for the prevention and treatment of disease caused by pathogenic microorganisms.
摘要翻译：本发明涉及具有益生菌活性的具有抗弧菌属病原微生物和其他病原体的抗微生物活性的具有益生菌活性的新型孢子乳杆菌葡萄藤SL153菌株（登录号：KCTC 11493BP）。本发明的芽孢杆菌属SL153菌株对包括弧菌属微生物在内的病原微生物具有优异的肠粘连和生长抑制作用，因此可有效地用作预防和治疗病原微生物引起的疾病的组合物。

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