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    • 3. 发明授权
    • Method of manufacturing nano-wire
    • 制造纳米线的方法
    • US07393410B2
    • 2008-07-01
    • US11114196
    • 2005-04-26
    • Sang-Hyun LeeTae-Won JeongJeong-Na Huh
    • Sang-Hyun LeeTae-Won JeongJeong-Na Huh
    • C30B25/00C30B29/66
    • C30B25/18C30B25/02C30B29/605Y10S977/813Y10S977/814Y10S977/825
    • There is provided a method of manufacturing a nano-wire using a crystal structure. In the method of manufacturing a nano-wire, a crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference within a predetermined range is deposited on the crystal grain, thereby allowing the nano-wire to grow from at least one of the crystal faces. Therefore, it is possible to give the positional selectivity with a simple process using a principle of crystal growth and to generate a nano-structure such as a nano-wire, etc. having good crystallinity. Further, it is possible to generate a different-kind junction structure having various shapes by adjusting a feature of a crystal used as a seed.
    • 提供了使用晶体结构制造纳米线的方法。 在制造纳米线的方法中,使用具有多个晶面的晶粒作为种子,并且在晶粒上沉积具有规定范围内的晶格常数差的晶体生长材料,由此使纳米线 从至少一个晶面生长。 因此,可以通过使用晶体生长原理的简单工艺来产生位置选择性,并且可以产生具有良好结晶度的纳米线等纳米结构。 此外,通过调整用作种子的晶体的特征,可以生成具有各种形状的不同种类的连接结构。