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    • 6. 发明授权
    • IPS liquid crystal display panel having spacer holes formed between common lines and gate lines
    • IPS液晶显示面板具有在公共线和栅极线之间形成的间隔孔
    • US08149372B2
    • 2012-04-03
    • US11450288
    • 2006-06-12
    • Myoung Ho LeeMin Joo Kim
    • Myoung Ho LeeMin Joo Kim
    • G02F1/1335G02F1/1343G02F1/1345
    • G02F1/136227G02F1/13392
    • A liquid crystal display panel according includes a gate line and a data line crossing each other on a first substrate, a common electrode formed in parallel to the data line, a common line connected to the common electrode and arranged in parallel to the gate line, a gate insulating film formed between the gate and data lines to cover the gate line, the common line and the common electrode, a thin film transistor formed at a crossing part of the gate and data lines, a passivation film covering the thin film transistor, the data line and the gate insulating film, a pixel electrode connected to the thin film transistor, a spacer hole penetrating the gate insulating film and the passivation film, and at least one ball spacer formed in the spacer hole.
    • 一种液晶显示面板,包括在第一基板上彼此交叉的栅极线和数据线,与数据线并联形成的公共电极,与公共电极连接并与栅极线平行布置的公共线, 形成在栅极和数据线之间以覆盖栅极线,公共线和公共电极的栅极绝缘膜,形成在栅极和数据线的交叉部分的薄膜晶体管,覆盖薄膜晶体管的钝化膜, 数据线和栅极绝缘膜,连接到薄膜晶体管的像素电极,穿过栅绝缘膜的隔离孔和钝化膜以及形成在间隔孔中的至少一个球隔板。
    • 8. 发明申请
    • ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE ORGANIC THIN FILM TRANSISTOR, AND DISPLAY APPARATUS USING THE SAME
    • 有机薄膜晶体管及制造有机薄膜晶体管的方法及使用其的显示装置
    • US20100276679A1
    • 2010-11-04
    • US12827612
    • 2010-06-30
    • Nack Bong ChoiMin Joo Kim
    • Nack Bong ChoiMin Joo Kim
    • H01L51/00H01L33/00
    • H01L51/0541G02F1/1368H01L51/102
    • Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.
    • 提供一种有机半导体结构及其制造方法,使用有机半导体结构的有机薄膜晶体管(OTFT)和制造OTFT的方法以及使用其的显示装置。 OTFT包括:形成在基底基板上的氧化物层; 在所述氧化物层上的源电极,其中所述源电极包括第一源电极部分和第二源电极部分; 在所述氧化物层上的漏电极,其中所述漏电极包括第一漏电极部分和第二漏电极部分; 有机层图案,具有露出第一源电极部分和第一漏电极部分的开口; 通过所述开口与所述第一源电极部分和所述第一漏电极部分电连接的有机半导体图案,其中所述有机半导体图案具有取决于所施加的电场的导电或绝缘性能; 覆盖有机半导体图案的栅极绝缘层; 以及形成在对应于有机半导体图案的栅绝缘层上的栅电极。
    • 9. 发明授权
    • Organic thin film transistor and method of manufacturing the organic thin film transistor, and display apparatus using the same
    • 有机薄膜晶体管及其制造方法以及使用其的显示装置
    • US07773166B2
    • 2010-08-10
    • US11638384
    • 2006-12-14
    • Nack Bong ChoiMin Joo Kim
    • Nack Bong ChoiMin Joo Kim
    • G02F1/136
    • H01L51/0541G02F1/1368H01L51/102
    • Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.
    • 提供一种有机半导体结构及其制造方法,使用有机半导体结构的有机薄膜晶体管(OTFT)和制造OTFT的方法以及使用其的显示装置。 OTFT包括:形成在基底基板上的氧化物层; 在所述氧化物层上的源电极,其中所述源电极包括第一源电极部分和第二源电极部分; 在所述氧化物层上的漏电极,其中所述漏电极包括第一漏电极部分和第二漏电极部分; 有机层图案,具有露出第一源电极部分和第一漏电极部分的开口; 通过所述开口与所述第一源电极部分和所述第一漏电极部分电连接的有机半导体图案,其中所述有机半导体图案具有取决于所施加的电场的导电或绝缘性能; 覆盖有机半导体图案的栅极绝缘层; 以及形成在对应于有机半导体图案的栅极绝缘层上的栅电极。