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1. 发明授权

US06291343B1 Plasma annealing of substrates to improve adhesion 失效
标题翻译：基板的等离子体退火以提高粘附性
公开(公告)号：US06291343B1
公开(公告)日：2001-09-18
申请号：US09008796
申请日：1998-01-20
申请人： Jennifer Tseng , Mei Chang , Ling Chen , David C. Smith , Karl A. Littau , Chyi Chern , Marvin Liao
发明人： Jennifer Tseng , Mei Chang , Ling Chen , David C. Smith , Karl A. Littau , Chyi Chern , Marvin Liao
IPC分类号： H01L2124
CPC分类号： H01L21/76856 , C23C16/0245 , C23C16/34 , C23C16/4581 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/336 , H01L21/28512 , H01L21/76841 , H01L21/76862 , H01L21/76864
摘要： A layer of material is formed on a substrate in a partially formed integrated circuit on a wafer. The substrate undergoes a plasma annealing, during which the substrate is bombarded with ions. The plasma annealing may be performed by exposing the substrate to plasma that is generated from a nitrogen containing gas which is infused with energy. After the substrate is plasma annealed, a layer of a refractory metal nitride is deposited on the substrate. The layer of refractory metal nitride is then bombarded with a first set of ions. The bombardment of the refractory metal by the first set of ions may be achieved by performing a plasma annealing. The refractory metal nitride may be further bombarded by a second set of ions.
摘要翻译：在晶片上的部分形成的集成电路中的衬底上形成一层材料。衬底经历等离子体退火，在此期间衬底被离子轰击。等离子体退火可以通过将衬底暴露于由注入能量的含氮气体产生的等离子体来进行。在对衬底进行等离子体退火之后，在衬底上沉积难熔金属氮化物层。然后用第一组离子轰击难熔金属氮化物层。可以通过进行等离子体退火来实现第一组离子对难熔金属的轰击。耐火金属氮化物可以被第二组离子进一步轰击。

2. 发明授权

US5989999A Construction of a tantalum nitride film on a semiconductor wafer 失效
标题翻译：在半导体晶片上构造氮化钽膜
公开(公告)号：US5989999A
公开(公告)日：1999-11-23
申请号：US939914
申请日：1997-09-26
申请人： Timothy E. Levine , Ling Chen , Mei Chang , Roderick C. Mosely , Karl A. Littau , Ivo Raaijmakers
发明人： Timothy E. Levine , Ling Chen , Mei Chang , Roderick C. Mosely , Karl A. Littau , Ivo Raaijmakers
IPC分类号： C23C16/34 , C23C16/458 , C23C16/48 , C23C16/509 , C23C16/56 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76864 , C23C16/34 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01L21/76843 , H01L21/76856 , H01L21/76862
摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer (film) of tantalum nitride material is deposited on the wafer. Next, the layer of tantalum nitride material is annealed. The deposition and annealing may both be accomplished in the same chamber, without need for removing the wafer from the chamber until both steps are completed.
摘要翻译：放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。在晶片上沉积氮化钽材料层（膜）。接下来，对氮化钽层进行退火。沉积和退火都可以在相同的室中完成，而不需要从腔室中移除晶片，直到完成两个步骤。

3. 发明授权

US5856240A Chemical vapor deposition of a thin film onto a substrate 失效
标题翻译：将薄膜化学气相沉积到基底上
公开(公告)号：US5856240A
公开(公告)日：1999-01-05
申请号：US342522
申请日：1994-11-21
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C14/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排出的均匀性。

4. 发明授权

US5326725A Clamping ring and susceptor therefor 失效
标题翻译：夹环和感受器
公开(公告)号：US5326725A
公开(公告)日：1994-07-05
申请号：US31259
申请日：1993-03-11
申请人： Semyon Sherstinsky , Charles C. Harris , Mei Chang , Dale R. Du Bois , James F. Roberts , Susan Telford , Ronald L. Rose , Meng C. Tseng , Karl A. Littau
发明人： Semyon Sherstinsky , Charles C. Harris , Mei Chang , Dale R. Du Bois , James F. Roberts , Susan Telford , Ronald L. Rose , Meng C. Tseng , Karl A. Littau
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/042 , C23C16/4585 , H01L21/68721 , H01L21/68735
摘要： A clamping ring having a downwardly extending finger that mates with a pocket in the periphery of a susceptor for supporting a wafer in a chemical vapor deposition chamber, provides alignment of the clamping ring, the wafer and the susceptor. A source of inert gas connected to the pocket provides a positive pressure in the pocket that prevents reactive gas in the chamber from reaching the edge and backside of the wafer. A source of vacuum connected to the susceptor support surface ensures good contact between the wafer and the susceptor.The clamping ring also has a lip extending over the top surface of the wafer having a rear surface that has a negative angle with respect to the upper surface of the clamping ring, providing a knife edge seal to the wafer, reducing the area of contact between the clamping ring and the wafer and providing a reduced area of thermal contact between the clamping ring and the wafer.
摘要翻译：具有向下延伸的指状物的夹紧环，其与基座的周边中的口相配合，用于在化学气相沉积室中支撑晶片，提供夹紧环，晶片和基座的对准。连接到口袋的惰性气体源在口袋中提供正压力，防止腔室中的反应性气体到达晶片的边缘和背面。连接到基座支撑表面的真空源确保了晶片和基座之间良好的接触。夹紧环还具有在晶片的顶表面上延伸的唇缘，其具有相对于夹紧环的上表面具有负角度的后表面，为晶片提供刀刃密封，从而减小了夹紧环和晶片，并且在夹紧环和晶片之间提供减小的热接触面积。

5. 发明授权

US5516367A Chemical vapor deposition chamber with a purge guide 失效
标题翻译：具有清洗导管的化学气相沉积室
公开(公告)号：US5516367A
公开(公告)日：1996-05-14
申请号：US342670
申请日：1994-11-21
申请人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排放的均匀性。

6. 发明申请

US20110141206A1 STACKED SLICE PRINTHEAD 有权
标题翻译：堆叠拼贴
公开(公告)号：US20110141206A1
公开(公告)日：2011-06-16
申请号：US12639347
申请日：2009-12-16
申请人： Patrick C. P. Cheung , Karl A. Littau , Michael Y. Young , Steven A. Buhler
发明人： Patrick C. P. Cheung , Karl A. Littau , Michael Y. Young , Steven A. Buhler
IPC分类号： B41J2/045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1629
摘要： A side-firing printhead comprises a stack that includes a plurality of slices, wherein each slice includes a PCB trigger layer and a diaphragm layer, the PCB trigger layer controls the flow of ink from the diaphragm layer, a first side of the diaphragm layer includes at least one cavity that delivers ink via one or more aperture braces. An aperture plate is coupled to one side of the stack to interface to the diaphragm layers contained therein, wherein the aperture plate contains a plurality of apertures that are located at each aperture brace. A first bracket is disposed on the top of the stack and a second bracket is disposed on the bottom of the stack, wherein at least one fastener couples the second bracket to the first bracket such that a predetermined amount of pressure is applied to the stack.
摘要翻译：侧面喷射打印头包括包括多个切片的堆叠，其中每个切片包括PCB触发层和隔膜层，所述PCB触发层控制来自所述隔膜层的墨的流动，所述隔膜层的第一侧包括至少一个通过一个或多个孔径支架输送墨水的空腔。孔板联接到堆叠的一侧以与包含在其中的隔膜层相接合，其中孔板包含位于每个孔支架处的多个孔。第一支架设置在堆叠的顶部，并且第二支架设置在堆叠的底部，其中至少一个紧固件将第二支架联接到第一支架，使得预定量的压力施加到堆叠。

7. 发明授权

US07901130B2 Method and apparatus for calibrating a thermistor 有权
标题翻译：用于校准热敏电阻的方法和装置
公开(公告)号：US07901130B2
公开(公告)日：2011-03-08
申请号：US12497993
申请日：2009-07-06
申请人： Scott Jong Ho Limb , Michael Yu Tak Young , Karl A. Littau
发明人： Scott Jong Ho Limb , Michael Yu Tak Young , Karl A. Littau
IPC分类号： G01K15/00
CPC分类号： G01K7/223 , G01K15/00 , Y10T29/49085
摘要： The presently described embodiments are directed to a calibration method and system for thin film thermistors that are locally heated with integrated thin film heaters. Initially, print head temperature is either measured or referenced. Then, transient thermistor resistances are measured and used to determine the thermistor resistance at a higher temperature. Notably, this calibration method is advantageously implemented as a step of an existing process without having to expose the print heads to operating temperatures. In some implementations of the presently described embodiments, trimming of the thermistors may be required once calibrated.
摘要翻译：目前描述的实施例涉及用集成薄膜加热器局部加热的薄膜热敏电阻的校准方法和系统。最初，打印头温度是测量或参考。然后，测量瞬态热敏电阻电阻并用于确定较高温度下的热敏电阻电阻。值得注意的是，该校准方法有利地被实现为现有工艺的步骤，而不必将打印头暴露于工作温度。在目前描述的实施例的一些实施方案中，一旦校准就可能需要修整热敏电阻。

8. 发明申请

US20100059377A1 SYSTEM AND METHOD FOR RECOVERY OF CO2 BY AQUEOUS CARBONATE FLUE GAS CAPTURE AND HIGH EFFICIENCY BIPOLAR MEMBRANE ELECTRODIALYSIS 有权
标题翻译：通过碳酸气体气体捕获和高效双极膜电解法回收二氧化碳的系统和方法
公开(公告)号：US20100059377A1
公开(公告)日：2010-03-11
申请号：US12206424
申请日：2008-09-08
申请人： Karl A. Littau , Francisco E. Torres
发明人： Karl A. Littau , Francisco E. Torres
IPC分类号： B01D61/42 , B01D61/46 , B01D61/52
CPC分类号： B01D61/445 , B01D53/62 , B01D53/77 , B01D53/96 , B01D2251/306 , B01D2251/606 , B01D2257/504 , C02F1/4693 , Y02C10/04
摘要： A system and method for recovery of CO2 includes an aqueous capture device having a capture solution. The aqueous capture device is arranged to receive gas and to capture components from the gas including at least CO2. An electrodialysis unit in operative connection with the capture device performs an electrodialysis operation on the capture solution including at least the CO2, wherein a CO2 rich process stream and a regenerated capture solution are generated from the capture solution including at least the CO2. The CO2 rich process stream is a pressurized process stream at a pressure which maintains the CO2 substantially within the CO2 rich process stream, while in the electrodialysis unit. In another alternative, at least the pH of the capture stream is controlled.
摘要翻译：用于回收CO 2的系统和方法包括具有捕获溶液的水性捕获装置。水性捕获装置被布置成接收气体并从包括至少CO 2的气体中捕获组分。与采集装置可操作地连接的电渗析装置对包括至少二氧化碳的捕获溶液进行电渗析操作，其中从包含至少二氧化碳的捕获溶液产生富CO 2的工艺流和再生的捕获溶液。富CO2过程流是在电渗析单元中将CO 2基本维持在富CO2过程流内的压力下的加压工艺流。在另一个替代方案中，至少捕获流的pH被控制。

9. 发明申请

US20090156003A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 失效
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20090156003A1
公开(公告)日：2009-06-18
申请号：US12335976
申请日：2008-12-16
申请人： MING XI , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： MING XI , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/285 , H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

10. 发明授权

US07234214B2 Methods for making thick film elements 有权
标题翻译：制作厚膜元件的方法
公开(公告)号：US07234214B2
公开(公告)日：2007-06-26
申请号：US11084579
申请日：2005-03-18
申请人： Baomin Xu , Steven A. Buhler , Michael C. Weisberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
发明人： Baomin Xu , Steven A. Buhler , Michael C. Weisberg , William S. Wong , Scott E. Solberg , Karl A. Littau , John S. Fitch , Scott A. Elrod
IPC分类号： H04R17/00
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1632 , B41J2/1634 , B41J2/1637 , B41J2/1646 , H01L41/313 , H01L41/314 , H01L41/331 , H01L2221/68368 , Y10T29/42 , Y10T29/435 , Y10T29/49128 , Y10T29/4913 , Y10T29/49133 , Y10T29/49155 , Y10T29/4981
摘要： A method of producing at least one thick film element, including depositing a material on a surface of at least one first substrate to form at least one thick film element structure having a thickness of approximately greater than 10 μm to 100 μm. Then, then the at least one thick film element structure is bonded to a second substrate, and the at least one first substrate is removed from the at least one thick film element structure using a lift-off process employing radiation energy. The lift-off process including emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the first surface of the first substrate. The first substrate being substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment.
摘要翻译：一种生产至少一个厚膜元件的方法，包括在至少一个第一基底的表面上沉积材料以形成至少一个厚度大约在10至100μm的厚膜元件结构。然后，将至少一个厚膜元件结构接合到第二基板，并且使用采用辐射能的剥离工艺将至少一个第一基板从至少一个厚膜元件结构移除。剥离过程包括从辐射源将辐射束从第一衬底发射到在第一衬底的第一表面处形成在第一衬底和至少一个厚膜元件结构之间的附接界面。第一衬底在辐射束的波长处基本上是透明的，允许辐射束在界面处产生足够的能量以破坏附件。

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