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1. 发明授权

US06225203B1 PE-SiN spacer profile for C2 SAC isolation window 有权
标题翻译：用于C2 SAC隔离窗的PE-SiN间隔件
公开(公告)号：US06225203B1
公开(公告)日：2001-05-01
申请号：US09304334
申请日：1999-05-03
申请人： Jen-Cheng Liu , Jen-Shiang Leu , Chia-Shiung Tsai
发明人： Jen-Cheng Liu , Jen-Shiang Leu , Chia-Shiung Tsai
IPC分类号： H01L21302
CPC分类号： H01L27/10855 , H01L21/31116 , H01L21/3185 , H01L21/76897 , H01L27/10814 , H01L27/10885
摘要： A method of forming a PE-CVD silicon nitride spacer having a good profile in the fabrication of a self-aligned contact wherein a two-step etching process forms the spacer is described. Semiconductor device structures are formed on a semiconductor substrate. A layer of silicon nitride is deposited by plasma-enhanced chemical vapor deposition over the surface of the substrate and overlying the semiconductor device structures. The silicon nitride layer is etched away using a two-step etching process to leave silicon nitride spacers on the side surfaces of the semiconductor device structures. The two-step process comprises a first etching away of 70% of the silicon nitride layer using Cl2/He chemistry and a second etching away of the remaining silicon nitride on top surface of the semiconductor device strucutures using SF6/CHF3/He chemistry.
摘要翻译：描述了在制造自对准接触中具有良好外形的PE-CVD氮化硅间隔物的方法，其中两步蚀刻工艺形成间隔物。半导体器件结构形成在半导体衬底上。通过等离子体增强化学气相沉积在衬底的表面上并覆盖半导体器件结构来沉积氮化硅层。使用两步蚀刻工艺蚀刻掉氮化硅层，以在半导体器件结构的侧表面上留下氮化硅间隔物。两步法包括使用Cl2 / He化学法首先蚀刻掉70％的氮化硅层，并且使用SF6 / CHF3 / He化学法在半导体器件结构的顶表面上第二次蚀刻剩余的氮化硅。

2. 发明授权

US06383943B1 Process for improving copper fill integrity 有权
标题翻译：改善铜填充完整性的工艺
公开(公告)号：US06383943B1
公开(公告)日：2002-05-07
申请号：US09687160
申请日：2000-10-16
申请人： Chao-Cheng Chen , Jen-Cheng Liu , Jyu-Horng Shieh , Chia-Shiung Tsai , Bor-Shyang Lin
发明人： Chao-Cheng Chen , Jen-Cheng Liu , Jyu-Horng Shieh , Chia-Shiung Tsai , Bor-Shyang Lin
IPC分类号： H01L21302
CPC分类号： H01L21/76843 , H01L21/3105 , H01L21/76802 , H01L21/76814 , H01L21/76826 , H01L21/76829
摘要： A method for eliminating the problems associated with the discontinuous deposition of the glue layer at the bottom of the via resulting from the notch in the silicon nitride etch stop layer. First conductive layer traces are patterned and a silicon nitride (SiN) etch stop layer is provided overlying the first conductive layer. An inter-metal dielectric (IMD) layer then overlies the entire surface. An anisotropic etch is performed leaving via holes in the IMD layer. This is followed by a second anisotropic etch step to remove the etch stop layer not protected by the IMD layer resulting in the formation a notch at the bottom of the via hole. An important step of the present invention is the elimination of this notch accomplished by nitridizing the surface of the IMD layer. A wet polymer cleaning is performed to remove the nitridized IMD surface and eliminating the notch. A glue layer is conformally applied lining the via hole. A second conductive layer is then deposited and the surface is planarized.
摘要翻译：一种用于消除与在氮化硅蚀刻停止层中由凹口产生的通孔底部的胶层不连续沉积相关的问题的方法。图案化第一导电层迹线，并且覆盖第一导电层提供氮化硅（SiN）蚀刻停止层。金属间电介质（IMD）层然后覆盖整个表面。进行各向异性蚀刻，留下IMD层中的通孔。然后进行第二个各向异性蚀刻步骤以去除不被IMD层保护的蚀刻停止层，从而在通孔的底部形成切口。本发明的重要步骤是消除通过使IMD层的表面氮化而实现的这个缺口。执行湿式聚合物清洁以除去氮化的IMD表面并消除凹口。粘合层适用于衬套通孔。然后沉积第二导电层并且将表面平坦化。

3. 发明授权

US06242362B1 Etch process for fabricating a vertical hard mask/conductive pattern profile to improve T-shaped profile for a silicon oxynitride hard mask 有权
标题翻译：用于制造垂直硬掩模/导电图案轮廓以改善氮氧化硅硬掩模的T形轮廓的蚀刻工艺
公开(公告)号：US06242362B1
公开(公告)日：2001-06-05
申请号：US09366736
申请日：1999-08-04
申请人： Jen-Cheng Liu , Huan-Just Lin , Chia-Shiung Tsai , Yung-Kuan Hsaio
发明人： Jen-Cheng Liu , Huan-Just Lin , Chia-Shiung Tsai , Yung-Kuan Hsaio
IPC分类号： H01L21302
CPC分类号： H01L21/32137 , H01L21/32139
摘要： The present invention provides a method of fabricating a vertical hard mask/conductive pattern profile. The process begins by forming a polysilicon or more preferably a polysilicon and silicide conductive layer over a semiconductor substrate. A silicon oxynitride hard mask layer is formed over the conductive layer. The silicon oxynitride hard mask layer is patterned to form a hard mask pattern. The conductive layer is patterned to form a conductive pattern using Cl2/He—O2/N2 etch chemistry, thereby forming a hard mask/conductive pattern profile that is vertical.
摘要翻译：本发明提供了制造垂直硬掩模/导电图案轮廓的方法。该过程通过在半导体衬底上形成多晶硅或更优选多晶硅和硅化物导电层开始。在导电层上形成氧氮化硅硬掩模层。将氮氧化硅硬掩模层图案化以形成硬掩模图案。使用Cl 2 / He-O 2 / N 2蚀刻化学法将导电层图案化以形成导电图案，从而形成垂直的硬掩模/导电图案轮廓。

4. 发明授权

US06399483B1 Method for improving faceting effect in dual damascene process 有权
标题翻译：改进双镶嵌工艺中的刻面效应的方法
公开(公告)号：US06399483B1
公开(公告)日：2002-06-04
申请号：US09624523
申请日：2000-07-24
申请人： Jen-Cheng Liu , Ming-Huei Lui , Hun-Jan Tao , Chia Shiung Tsai
发明人： Jen-Cheng Liu , Ming-Huei Lui , Hun-Jan Tao , Chia Shiung Tsai
IPC分类号： H01L214763
CPC分类号： H01L21/76814 , H01L21/76808 , H01L2221/1063
摘要： A new method is provided for creating the interconnect pattern for dual damascene structures. The dual damascene structure is created in two overlying levels of dielectric, a first etch stop layer is deposited over the surface of the substrate, a second etch stop layer is deposited between the two layers of dielectric. A first etch penetrates both layers of dielectric, a second etch penetrates the top dielectric layer. Before the second etch is performed, a layer of ARC is deposited. For the second etch a polymer rich etchant is used to protect the sidewalls of the opening. The second etch leaves in place a fence of material (containing C, H, F and oxide compounds) that is formed around the upper perimeter of the opening through the lower layer of dielectric. This fence protects the upper corners of the lower opening of the dual damascene structure and is removed in a two step procedure. At the completion of this two step procedure the upper corners of the lower opening of the dual damascene structure have retained a rectangular profile. A final step removes the photoresist (that has been used to create the interconnect line opening) from the surface of the second layer of dielectric while the remnants of the ARC material are also removed.
摘要翻译：提供了一种用于创建双镶嵌结构的互连图案的新方法。双镶嵌结构在两个相邻的电介质层上产生，第一蚀刻停止层沉积在衬底的表面上，第二蚀刻停止层沉积在两层介电层之间。第一蚀刻穿透两层电介质，第二蚀刻穿透顶部电介质层。在执行第二蚀刻之前，沉积ARC层。对于第二蚀刻，使用聚合物富集的蚀刻剂来保护开口的侧壁。第二蚀刻留下了通过下电介质的开口周围形成的材料（含有C，H，F和氧化物化合物）的栅栏。该栅栏保护双镶嵌结构的下开口的上角，并以两步程序移除。在完成这个两步骤程序后，双镶嵌结构的下开口的上角保留了矩形轮廓。最后一步从电介质的第二层的表面去除光致抗蚀剂（已用于形成互连线开口），而ARC材料的残余物也被去除。

5. 发明授权

US06309962B1 Film stack and etching sequence for dual damascene 有权
标题翻译：双重镶嵌薄膜叠层和蚀刻顺序
公开(公告)号：US06309962B1
公开(公告)日：2001-10-30
申请号：US09396516
申请日：1999-09-15
申请人： Chao-Cheng Chen , Li-Chi Chao , Jen-Cheng Liu , Min-Huei Lui , Chia-Shiung Tsai
发明人： Chao-Cheng Chen , Li-Chi Chao , Jen-Cheng Liu , Min-Huei Lui , Chia-Shiung Tsai
IPC分类号： H01L214763
CPC分类号： H01L21/76811 , H01L21/31144 , H01L21/76813
摘要： A process for forming a dual damascene cavity in a dielectric, particularly a low k organic dielectric, is described. The dielectric is composed of two layers separated by an etch stop layer. Formation of the damascene cavity is achieved by using a hard mask that is made up of two layers of silicon oxynitride separated by layer of silicon oxide. For both the trench first and via first approaches, the first cavity is formed using only the upper silicon oxynitride layer as the mask. Thus, when the second portion is patterned, little or no misalignment occurs because said upper layer is relatively thin. Additional etching steps result in a cavity and trench part that extend as far as the etch stop layer located between the dielectric layers. Final removal of photoresist occurs with a hard mask still in place so no damage to the organic dielectric occurs. A final etch step then completes the process.
摘要翻译：描述了在电介质，特别是低k有机电介质中形成双镶嵌腔的工艺。电介质由两层由蚀刻停止层隔开组成。通过使用由两层氧氮化硅分离的氧化硅层组成的硬掩模来实现镶嵌腔的形成。对于沟槽第一和通过第一方法，仅使用上部氧氮化硅层作为掩模形成第一腔体。因此，当第二部分被图案化时，由于所述上层相对较薄，所以几乎不发生不对准。另外的蚀刻步骤导致空腔和沟槽部分延伸到位于电介质层之间的蚀刻停止层的尽可能深。光致抗蚀剂的最终去除是在硬掩模仍然存在的情况下发生的，因此不会损害有机电介质。最终蚀刻步骤然后完成该过程。

6. 发明授权

US06211061B1 Dual damascene process for carbon-based low-K materials 有权
标题翻译：用于碳基低K材料的双镶嵌工艺
公开(公告)号：US06211061B1
公开(公告)日：2001-04-03
申请号：US09431536
申请日：1999-10-29
申请人： Chao-Cheng Chen , Ming-Huei Lui , Jen-Cheng Liu , Li-chih Chao , Chia-Shiung Tsai
发明人： Chao-Cheng Chen , Ming-Huei Lui , Jen-Cheng Liu , Li-chih Chao , Chia-Shiung Tsai
IPC分类号： H01L214763
CPC分类号： H01L21/76808
摘要： A method for forming a dual damascene structure in a carbon-based, low-K material. The process begins by providing a semiconductor structure having a first metal pattern thereover, wherein the first metal pattern has a first barrier layer thereon. An organic dielectric layer is formed on the first barrier layer, and a hard mask layer is formed on the dielectric layer. The hard mask layer and the dielectric layer are patterned to form a trench. A second barrier layer is formed over the hard mask layer and on the bottom and sidewalls of the trench. A barc layer is formed over the second barrier layer, thereby filling the trench. The barc layer, the second barrier layer, and the dielectric layer are patterned to form a via opening, preferably using a photoresist mask. The barc layer is patterned without faceting the edges of the via opening due to the second barrier layer. The barc layer and the etch mask are removed by the dielectric layer etch. The first barrier layer and the second barrier layer are removed. A third barrier layer is formed on the bottom and sidewalls of the trench, on the sidewalls of the via opening, and on the first metal pattern through the via opening. The trench and the via opening are filled with metal to form a damascene structure.
摘要翻译：一种在碳基低K材料中形成双镶嵌结构的方法。该过程开始于提供其上具有第一金属图案的半导体结构，其中第一金属图案在其上具有第一阻挡层。在第一阻挡层上形成有机电介质层，在电介质层上形成硬掩模层。图案化硬掩模层和电介质层以形成沟槽。第二阻挡层形成在硬掩模层之上以及沟槽的底部和侧壁上。在第二阻挡层上形成棒状层，由此填充沟槽。将棒状层，第二阻挡层和电介质层图案化以形成通孔，优选使用光致抗蚀剂掩模。由于第二阻挡层，棒状层被图案化而不使通孔开口的边缘刻划。通过电介质层蚀刻去除棒状层和蚀刻掩模。去除第一阻挡层和第二阻挡层。第三阻挡层形成在沟槽的底部和侧壁上，通孔开口的侧壁上，通过通孔开口形成在第一金属图案上。沟槽和通孔开口用金属填充以形成镶嵌结构。

7. 发明授权

US06323121B1 Fully dry post-via-etch cleaning method for a damascene process 有权
标题翻译：用于镶嵌工艺的完全干燥的经过蚀刻的清洁方法
公开(公告)号：US06323121B1
公开(公告)日：2001-11-27
申请号：US09570018
申请日：2000-05-12
申请人： Jen-Cheng Liu , Chao-Cheng Chen , Li-Chih Chao , Chia-Shiung Tsai , Ming-Huei Lui
发明人： Jen-Cheng Liu , Chao-Cheng Chen , Li-Chih Chao , Chia-Shiung Tsai , Ming-Huei Lui
IPC分类号： H01L214763
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76807
摘要： A method is described for cleaning freshly etched dual damascene via openings and preparing them for copper fill without damage or contamination of exposed organic or other porous low-k insulative layers. The method is entirely dry and does not expose the porous materials to contamination from moisture or solvents. The method is effective for removing all traces of residual polymer deposits from an in-process substrate wafers after via or damascene trench etching. The method employs an in-situ three-step treatment comprising a first step of exposing the electrically biased substrate wafer to a O2/N2 ashing plasma to remove photoresist and polymers, a second step immediately following the first step of remove silicon nitride etch stop layers, and a final step of treating the wafer with H2/N2 to remove copper polymer deposits formed during nitride removal. The H2/N2 plasma is capable of removing the difficult polymer residues which are otherwise only removable by wet stripping procedures. The H2/N2 plasma is not harmful to exposed porous low-k dielectric layers as well as copper metallurgy.
摘要翻译：描述了一种用于通过开口清洁新鲜蚀刻的双镶嵌件的方法，并且它们用于铜填充而不损坏或污染暴露的有机或其它多孔低k绝缘层。该方法是完全干燥的，并且不会使多孔材料暴露于水分或溶剂的污染物中。该方法对于在通孔或镶嵌沟槽蚀刻之后从工艺衬底晶片去除残余聚合物沉积物的所有迹线是有效的。该方法采用原位三步处理，其包括将电偏置的衬底晶片暴露于O 2 / N 2灰分等离子体以去除光致抗蚀剂和聚合物的第一步骤，紧接着在去除氮化硅蚀刻停止层的第一步骤之后的第二步骤，以及用H2 / N2处理晶片以除去在氮化物除去期间形成的铜聚合物沉积物的最后步骤。 H 2 / N 2等离子体能够去除困难的聚合物残余物，否则其仅可通过湿式剥离方法除去。 H2 / N2等离子体对暴露的多孔低k电介质层以及铜冶金无害。

8. 发明授权

US08377733B2 Antireflective layer for backside illuminated image sensor and method of manufacturing same 有权
标题翻译：用于背面照明图像传感器的抗反射层及其制造方法
公开(公告)号：US08377733B2
公开(公告)日：2013-02-19
申请号：US12890913
申请日：2010-09-27
申请人： Chih-Hui Huang , Cheng-Yuan Tsai , Yeur-Luen Tu , Chia-Shiung Tsai , Dun-Nian Yaung , Jen-Cheng Liu
发明人： Chih-Hui Huang , Cheng-Yuan Tsai , Yeur-Luen Tu , Chia-Shiung Tsai , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H01L21/00
CPC分类号： H01L27/1464 , H01L27/14625 , H01L27/14685
摘要： The present disclosure provides an image sensor device that exhibits improved quantum efficiency. For example, a backside illuminated (BSI) image sensor device is provided that includes a substrate having a front surface and a back surface; a light sensing region disposed at the front surface of the substrate; and an antireflective layer disposed over the back surface of the substrate. The antireflective layer has an index of refraction greater than or equal to about 2.2 and an extinction coefficient less than or equal to about 0.05 when measured at a wavelength less than 700 nm.
摘要翻译：本公开提供了一种显示出提高的量子效率的图像传感器装置。例如，提供了背面照明（BSI）图像传感器装置，其包括具有前表面和后表面的基板; 设置在所述基板的前表面的感光区域; 以及设置在基板的背面上的抗反射层。当在小于700nm的波长下测量时，抗反射层的折射率大于或等于约2.2，消光系数小于或等于约0.05。

9. 发明申请

US20120038015A1 ANTIREFLECTIVE LAYER FOR BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING SAME 有权
标题翻译：背面照明图像传感器的反射层及其制造方法
公开(公告)号：US20120038015A1
公开(公告)日：2012-02-16
申请号：US12890913
申请日：2010-09-27
申请人： Chih-Hui Huang , Cheng-Yuan Tsai , Yeur-Luen Tu , Chia-Shiung Tsai , Dun-Nian Yaung , Jen-Cheng Liu
发明人： Chih-Hui Huang , Cheng-Yuan Tsai , Yeur-Luen Tu , Chia-Shiung Tsai , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H01L31/0216
CPC分类号： H01L27/1464 , H01L27/14625 , H01L27/14685
摘要： The present disclosure provides an image sensor device that exhibits improved quantum efficiency. For example, a backside illuminated (BSI) image sensor device is provided that includes a substrate having a front surface and a back surface; a light sensing region disposed at the front surface of the substrate; and an antireflective layer disposed over the back surface of the substrate. The antireflective layer has an index of refraction greater than or equal to about 2.2 and an extinction coefficient less than or equal to about 0.05 when measured at a wavelength less than 700 nm.
摘要翻译：本公开提供了一种显示出提高的量子效率的图像传感器装置。例如，提供了背面照明（BSI）图像传感器装置，其包括具有前表面和后表面的基板; 设置在所述基板的前表面的感光区域; 以及设置在基板的背面上的抗反射层。当在小于700nm的波长下测量时，抗反射层的折射率大于或等于约2.2，消光系数小于或等于约0.05。

10. 发明申请

US20050158666A1 Lateral etch inhibited multiple etch method for etching material etchable with oxygen containing plasma 审中-公开
标题翻译：横向蚀刻抑制了用含氧等离子体蚀刻的蚀刻材料的多次蚀刻方法
公开(公告)号：US20050158666A1
公开(公告)日：2005-07-21
申请号：US11037787
申请日：2005-01-18
申请人： Jen-Cheng Liu , Shu-Chih Yang , Hun-Jan Tao , Chia-Shiung Tsai
发明人： Jen-Cheng Liu , Shu-Chih Yang , Hun-Jan Tao , Chia-Shiung Tsai
IPC分类号： G03C5/00 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/31116 , H01L21/31138
摘要： A method for etching a pattern within a dual-layer stack dielectric layer employed within a microelectronics fabrication. A first low dielectric constant dielectric layer employing HSQ polymer spin-on-glass (SOP) dielectric material is formed over a substrate. A second dielectric layer is then provided to form a dual level dielectric stack layer. There is then formed over the dual dielectric layer a patterned photoresist etch mask layer. The pattern is transferred into and through the dielectric stack layer employing an anisotropic reactive ion etching environment to etch the pattern through the patterned photoresist etch mask layer. There is then added to the etchant environment additional gases under conditions to form a plasma in the final etching environment to stabilize the etched pattern surface and attenuate degradation of the etched pattern during subsequent stripping of the photoresist etch mask pattern.
摘要翻译：一种用于蚀刻在微电子制造中采用的双层堆叠介质层内的图案的方法。在衬底上形成采用HSQ聚合物旋涂玻璃（SOP）电介质材料的第一低介电常数介电层。然后提供第二电介质层以形成双电平电介质堆叠层。然后在双电介质层上形成图案化的光致抗蚀剂蚀刻掩模层。使用各向异性反应离子蚀刻环境将图案转移到介电堆叠层中并通过电介质堆叠层，以通过图案化的光致抗蚀剂蚀刻掩模层蚀刻图案。然后在蚀刻剂环境中添加另外的气体，以在最终蚀刻环境中形成等离子体，以稳定蚀刻图案表面，并在随后剥离光致抗蚀剂蚀刻掩模图案期间减弱蚀刻图案的劣化。

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