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1. 发明申请

US20140080295A1 Surface Doping and Bandgap Tunability in Hydrogenated Graphene 有权
标题翻译：氢化石墨烯的表面掺杂和带隙可调性
公开(公告)号：US20140080295A1
公开(公告)日：2014-03-20
申请号：US13942257
申请日：2013-07-15
申请人： Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H. Houston
发明人： Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H. Houston
IPC分类号： H01L21/02 , H01B5/14 , H01B13/30
CPC分类号： H01L29/1606 , H01B5/14 , H01B13/30 , H01L21/02381 , H01L21/02488 , H01L21/02518 , H01L21/02527 , H01L21/02664 , H01L21/2236 , H01L21/3003
摘要： A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.
摘要翻译：一种在SiO 2衬底上引入单层石墨中的带隙的方法，包括在SiO 2 / Si衬底上制备石墨烯薄片和CVD生长的石墨烯薄膜并进行石墨烯氢化的步骤。另外，通过表面吸附物控制多数载体的类型。

2. 发明授权

US09312130B2 Surface doping and bandgap tunability in hydrogenated graphene 有权
标题翻译：氢化石墨烯中的表面掺杂和带隙可调性
公开(公告)号：US09312130B2
公开(公告)日：2016-04-12
申请号：US13942257
申请日：2013-07-15
申请人： Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H Houston
发明人： Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H Houston
IPC分类号： H01L21/02 , H01B13/30 , H01B5/14 , H01L29/16 , H01L21/223
CPC分类号： H01L29/1606 , H01B5/14 , H01B13/30 , H01L21/02381 , H01L21/02488 , H01L21/02518 , H01L21/02527 , H01L21/02664 , H01L21/2236 , H01L21/3003
摘要： A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.
摘要翻译：一种在SiO 2衬底上引入单层石墨中的带隙的方法，包括在SiO 2 / Si衬底上制备石墨烯薄片和CVD生长的石墨烯薄膜并进行石墨烯氢化的步骤。另外，通过表面吸附物控制多数载体的类型。

3. 发明授权

US08704315B2 CMOS integrated micromechanical resonators and methods for fabricating the same 有权
标题翻译： CMOS集成微机械谐振器及其制造方法
公开(公告)号：US08704315B2
公开(公告)日：2014-04-22
申请号：US13000650
申请日：2009-06-26
申请人： Jeevak M. Parpia , Harold G. Craighead , Joshua D. Cross , Bojan Robert Ilic , Maxim K. Zalalutdinov , Jeffrey W. Baldwin , Brian H. Houston
发明人： Jeevak M. Parpia , Harold G. Craighead , Joshua D. Cross , Bojan Robert Ilic , Maxim K. Zalalutdinov , Jeffrey W. Baldwin , Brian H. Houston
IPC分类号： H01L29/82
CPC分类号： B81C1/00246 , B81B2201/0271 , Y10T29/49007
摘要： The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.
摘要翻译：本发明涉及根据标准CMOS铸造制造工艺制造的CMOS集成微机械装置。标准CMOS铸造制造工艺的特征在于预定的层图和预定的制造规则集合。该器件包括根据预定层图形成或提供的半导体衬底以及预定的一组制造规则。根据预定层图和预定的制造规则集合制造MEMS谐振器装置。 MEMS谐振器装置包括具有大于或等于约20平方微米的表面积的微机械谐振器结构。至少一个CMOS电路耦合到MEMS谐振器构件。至少一个CMOS电路也是根据预定的层映射和预定的一组制造规则制造的。

4. 发明授权

US08174352B2 Method for making a transducer, transducer made therefrom, and applications thereof 有权
标题翻译：用于制造换能器，由其制成的换能器的方法及其应用
公开(公告)号：US08174352B2
公开(公告)日：2012-05-08
申请号：US13000644
申请日：2009-06-26
申请人： Jeevak M. Parpia , Harold G. Craighead , Joshua D. Cross , Bojan Robert Ilic , Maxim K. Zalalutdinov , Jeffrey W. Baldwin , Brian H. Houston
发明人： Jeevak M. Parpia , Harold G. Craighead , Joshua D. Cross , Bojan Robert Ilic , Maxim K. Zalalutdinov , Jeffrey W. Baldwin , Brian H. Houston
IPC分类号： G01L1/22
CPC分类号： B81C1/00246 , B81B2201/0271 , Y10T29/49007
摘要： A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased.
摘要翻译：制造或制备薄膜叠层的方法，其显示中等的，有限的，受应力依赖的电阻，并且可以结合到转导机构中，使得能够从微机械结构或纳米机械结构读出简单有效的信号。当结构被驱动时，中间层的电阻与运动一起被调制，并且通过合适的直流偏置，运动被直接转换成可检测的电压。通常，来自MEMS或NEMS器件的检测信号是困难的，特别是使用能够与标准电子器件集成的方法。因此，本文所述的薄膜制造或制备技术是MEMS / NEMS领域的技术进步，其可以实现新应用以及容易地开发CMOS-MEMS集成制造技术的能力。还公开了：（i）电流从压电层从一个主表面流向相对的主表面的换能器; 和（ii）制造换能器的方法是减小压阻层的电阻率和/或压阻层的规格因子增加。

5. 发明申请

US20110121937A1 METHOD FOR MAKING A TRANSDUCER, TRANSDUCER MADE THEREFROM, AND APPLICATIONS THEREOF 有权
标题翻译：制造传感器的方法，其制造的传感器及其应用
公开(公告)号：US20110121937A1
公开(公告)日：2011-05-26
申请号：US13000644
申请日：2009-06-26
申请人： Jeevak M. Parpia , Harold G. Craighead , Joshua D. Cross , Bojan Robert Ilic , Maxim K. Zalalutdinov , Jeffrey W. Baldwin , Brian H. Houston
发明人： Jeevak M. Parpia , Harold G. Craighead , Joshua D. Cross , Bojan Robert Ilic , Maxim K. Zalalutdinov , Jeffrey W. Baldwin , Brian H. Houston
IPC分类号： G01L1/22 , G01R3/00
CPC分类号： B81C1/00246 , B81B2201/0271 , Y10T29/49007
摘要： A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased.
摘要翻译：一种用于制造或制备薄膜叠层的方法，其表现出适度的，有限的应力依赖性电阻，并且可以结合到转导机构中，使得能够从微机械结构或纳米机械结构读出简单有效的信号。当结构被驱动时，中间层的电阻与运动一起被调制，并且通过合适的直流偏置，运动被直接转换成可检测的电压。通常，来自MEMS或NEMS器件的检测信号是困难的，特别是使用能够与标准电子器件集成的方法。因此，本文所述的薄膜制造或制备技术是MEMS / NEMS领域的技术进步，其可以实现新应用以及容易地开发CMOS-MEMS集成制造技术的能力。还公开了：（i）电流从压电层从一个主表面流向相对的主表面的换能器; 和（ii）制造换能器的方法是减小压阻层的电阻率和/或压阻层的规格因子增加。

6. 发明申请

US20110101475A1 CMOS INTEGRATED MICROMECHANICAL RESONATORS AND METHODS FOR FABRICATING THE SAME 有权
标题翻译： CMOS集成微机电谐振器及其制造方法
公开(公告)号：US20110101475A1
公开(公告)日：2011-05-05
申请号：US13000650
申请日：2009-06-26
申请人： Jeevak M. Parpia , Harold G. Craighead , Joshua D. Cross , Bojan Robert Ilic , Maxim K. Zalalutdinov , Jeffrey W. Baldwin , Brian H. Houston
发明人： Jeevak M. Parpia , Harold G. Craighead , Joshua D. Cross , Bojan Robert Ilic , Maxim K. Zalalutdinov , Jeffrey W. Baldwin , Brian H. Houston
IPC分类号： H01L29/84 , H01L21/77
CPC分类号： B81C1/00246 , B81B2201/0271 , Y10T29/49007
摘要： The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.
摘要翻译：本发明涉及根据标准CMOS铸造制造工艺制造的CMOS集成微机械装置。标准CMOS铸造制造工艺的特征在于预定的层图和预定的制造规则集合。该器件包括根据预定层图形成或提供的半导体衬底以及预定的一组制造规则。根据预定层图和预定的制造规则集合制造MEMS谐振器装置。 MEMS谐振器装置包括具有大于或等于约20平方微米的表面积的微机械谐振器结构。至少一个CMOS电路耦合到MEMS谐振器构件。至少一个CMOS电路也是根据预定的层映射和预定的一组制造规则制造的。

7. 发明申请

US20090206987A1 METHODS AND SYSTEMS FOR OBJECT IDENTIFICATION AND FOR AUTHENTICATION 有权
标题翻译：用于对象识别和认证的方法和系统
公开(公告)号：US20090206987A1
公开(公告)日：2009-08-20
申请号：US12297489
申请日：2007-04-19
申请人： Keith L. Aubin , Jeffrey W. Baldwin , Harold G. Craighead , Brian H. Houston , Jeevak M. Parpia , Robert B. Reichenbach , Maxim Zalalutdinov
发明人： Keith L. Aubin , Jeffrey W. Baldwin , Harold G. Craighead , Brian H. Houston , Jeevak M. Parpia , Robert B. Reichenbach , Maxim Zalalutdinov
IPC分类号： G06F7/04
CPC分类号： G06K19/0672 , G06K7/10336 , G06K19/0723
摘要： Methods and systems for object identification and/or authentication.
摘要翻译：用于对象识别和/或认证的方法和系统。

8. 发明授权

US09007213B2 Methods and systems for object identification and for authentication 有权
标题翻译：用于物体识别和认证的方法和系统
公开(公告)号：US09007213B2
公开(公告)日：2015-04-14
申请号：US12297489
申请日：2007-04-19
申请人： Keith L. Aubin , Jeffrey W. Baldwin , Harold G. Craighead , Brian H. Houston , Jeevak M. Parpia , Robert B. Reichenbach , Maxim Zalalutdinov
发明人： Keith L. Aubin , Jeffrey W. Baldwin , Harold G. Craighead , Brian H. Houston , Jeevak M. Parpia , Robert B. Reichenbach , Maxim Zalalutdinov
IPC分类号： G08B13/14 , G06K19/067 , G06K7/10 , G06K19/07
CPC分类号： G06K19/0672 , G06K7/10336 , G06K19/0723
摘要： Methods and systems for object identification and/or authentication.
摘要翻译：用于对象识别和/或认证的方法和系统。

9. 发明申请

US20100086735A1 Patterned Functionalization of Nanomechanical Resonators for Chemical Sensing 审中-公开
标题翻译：用于化学感应的纳米机械谐振器的图案化功能化
公开(公告)号：US20100086735A1
公开(公告)日：2010-04-08
申请号：US12571830
申请日：2009-10-01
申请人： Jeffrey W. Baldwin , Maxim K. Zalalutdinov , Bradford B. Pate , Brian H. Houston
发明人： Jeffrey W. Baldwin , Maxim K. Zalalutdinov , Bradford B. Pate , Brian H. Houston
IPC分类号： B32B3/10 , B05D3/06
CPC分类号： B81C1/00206 , B81B2201/0271 , G01N29/036 , G01N2291/0257 , H03H9/02259 , H03H9/2405 , Y10T428/24331
摘要： A method of functionalizing a nanomechanical resonator involving providing a wafer with a thin film layer on a sacrificial layer, suspending freely a resonator on the wafer, coating the resonator with a liquid containing a terminal allyl group, placing a quartz-mask on the wafer, trapping the liquid between the mask and the wafer, initiating a reaction of the terminal allyl with photo-induced electrons, rinsing the wafer, and drying the wafer. The liquid can be 2-allyl hexafluoroisopropanol or another liquid that has an effective sorbent group for DMMP or DNT. The initiating can be performed via a deep UV source selected from a Hg arc, Xe arc, or DUV laser. The method can further include incorporating narrow gaps of from about 50 to about 300 nm in the resonator.
摘要翻译：一种纳米机械谐振器的功能化方法，包括在牺牲层上提供具有薄膜层的晶片，将谐振器自由悬挂在晶片上，用含有末端烯丙基的液体涂覆谐振器，在晶片上放置石英掩模，在面罩和晶片之间捕获液体，引发末端烯丙基与光诱导电子的反应，冲洗晶片和干燥晶片。液体可以是2-烯丙基六氟异丙醇或具有用于DMMP或DNT的有效吸附剂基团的另一种液体。起始可以通过选自Hg弧，Xe弧或DUV激光的深UV源进行。该方法还可以包括在谐振器中引入约50至约300nm的窄间隙。

10. 发明申请

US20150223331A1 Device with a Single Crystal Diamond Substrate with a Buried Electrically Conducting Layer 有权
标题翻译：具有埋置导电层的单晶金刚石基板的器件
公开(公告)号：US20150223331A1
公开(公告)日：2015-08-06
申请号：US14686548
申请日：2015-04-14
申请人： Bradford B. Pate , Matthew P. Ray , Jeffrey W. Baldwin
发明人： Bradford B. Pate , Matthew P. Ray , Jeffrey W. Baldwin
IPC分类号： H05K1/09 , C30B33/02 , B23K26/06 , C30B29/04 , B23K26/40 , B23K26/00
CPC分类号： H05K1/09 , B23K26/06 , B23K26/0622 , B23K26/361 , B23K26/362 , B23K26/40 , B23K26/402 , B23K26/53 , B23K2101/38 , B23K2101/40 , B23K2103/50 , C30B29/04 , C30B33/02 , H01L23/3732 , H01L29/1602 , H01L29/1608 , H01L2924/00 , H01L2924/0002 , H05K3/0029 , H05K3/4602 , H05K2201/0323 , Y10S438/931 , Y10T428/265 , Y10T428/30
摘要： A device comprising a single crystal diamond substrate with a buried electrically conducting layer with μm square openings spaced apart milled into the diamond by ablating the carbon above wherein the step of ablating uses a diode pumped tripled Nd:YAG laser at 355 nm and wherein the square openings have electrical contacts and wherein the resistance measured between the square openings is dominated by the buried electrically conducting layer and on the order of about 1 kΩ.
摘要翻译：一种包括具有埋入导电层的单晶金刚石衬底的器件，其具有通过烧蚀上述碳而间隔开成菱形的埋入导电层，其中烧蚀步骤使用二极管泵浦三倍的Nd：YAG激光器在355nm处，并且其中正方形开口具有电接触，并且其中在正方形开口之间测量的电阻由埋入的导电层和大约1kΩ的量级组成。

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