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1. 发明申请

US20050068806A1 Double density MRAM with planar processing 有权
标题翻译：双重密度MRAM，具有平面加工
公开(公告)号：US20050068806A1
公开(公告)日：2005-03-31
申请号：US10991876
申请日：2004-11-18
申请人： Allan Hurst , Jeffrey Sather , Jason Gadbois
发明人： Allan Hurst , Jeffrey Sather , Jason Gadbois
IPC分类号： G11C11/15 , H01L27/22
CPC分类号： G11C11/15 , H01L27/222 , H01L29/66984
摘要： The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.
摘要翻译：半导体行业寻求用改进的非易失性存储器件替代传统的易失性存储器件。对显着高效，高效和非易失性数据保留技术的需求的增加推动了集成磁存储器结构的发展。在一个方面，本教导涉及高密度配置中的磁存储器结构制造技术，其包括用于编程高密度磁存储器结构的有效装置。

2. 发明授权

US07459739B2 Double density MRAM with planar processing 有权
标题翻译：双重密度MRAM，具有平面加工
公开(公告)号：US07459739B2
公开(公告)日：2008-12-02
申请号：US11401153
申请日：2006-04-10
申请人： Allan T. Hurst , Jeffrey Sather , Jason B. Gadbois
发明人： Allan T. Hurst , Jeffrey Sather , Jason B. Gadbois
IPC分类号： H01L29/76
CPC分类号： G11C11/15 , H01L27/222 , H01L29/66984
摘要： The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.
摘要翻译：半导体行业寻求用改进的非易失性存储器件替代传统的易失性存储器件。对显着高效，高效和非易失性数据保留技术的需求的增加推动了集成磁存储器结构的发展。在一个方面，本教导涉及高密度配置中的磁存储器结构制造技术，其包括用于编程高密度磁存储器结构的有效装置。

3. 发明申请

US20060063278A1 Methods of forming magnetic shielding for a thin-film memory element 有权
标题翻译：形成薄膜存储元件的磁屏蔽的方法
公开(公告)号：US20060063278A1
公开(公告)日：2006-03-23
申请号：US10992984
申请日：2004-11-19
申请人： Theodore Zhu , Jeffrey Sather
发明人： Theodore Zhu , Jeffrey Sather
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/14 , G11C11/15 , G11C11/16
摘要： A monolithically formed ferromagnetic thin-film memory is disclosed that has local shielding on at least two sides of selected magnetic storage elements. The local shielding preferably extends along the back and side surfaces of a word line and/or digital lines of a conventional magnetic memory. In this configuration, the local shielding not only may help reduce externally generated EMI, internally generated cross-talk and other unwanted fields in the magnetic bit region, but may also help enhance the desired magnetic fields in the bit region.
摘要翻译：公开了一种单片形成的铁磁薄膜存储器，其在选定的磁存储元件的至少两侧具有局部屏蔽。本地屏蔽优选沿着常规磁存储器的字线和/或数字线的背面和侧表面延伸。在该配置中，局部屏蔽不仅可以有助于减少磁区中的外部产生的EMI，内部产生的串扰和其他不需要的场，而且还可以有助于增强位区域中期望的磁场。

4. 发明申请

US20080032236A1 Method and apparatus for solid-state microbattery photolithographic manufacture, singulation and passivation 审中-公开
标题翻译：固态微电池光刻制造，单片化和钝化的方法和装置
公开(公告)号：US20080032236A1
公开(公告)日：2008-02-07
申请号：US11879745
申请日：2007-07-18
申请人： Mark Wallace , Jody Klaassen , Jeffrey Sather , Stuart Shakespeare
发明人： Mark Wallace , Jody Klaassen , Jeffrey Sather , Stuart Shakespeare
IPC分类号： H01M10/04 , C23F1/00
CPC分类号： H01M10/045 , H01M4/525 , H01M6/40 , H01M10/04 , H01M10/0436 , H01M10/052 , H01M10/056 , H01M10/0562 , H01M10/0585 , H01M2010/0495 , H01M2300/0094
摘要： A method for producing a thin film lithium battery is provided, comprising applying a cathode current collector, a cathode material, an anode current collector, and an electrolyte layer separating the cathode material from the anode current collector to a substrate, wherein at least one of the layers contains lithiated compounds that is patterned at least in part by a photolithography operation comprising removal of a photoresist material from the layer containing lithiated compounds by a process including a wet chemical treatment. Additionally, a method and apparatus for making lithium batteries by providing a first sheet that includes a substrate having a cathode material, an anode material, and a LiPON barrier/electrolyte layer separating the cathode material from the anode material; and removing a subset of first material to separate a plurality of cells from the first sheet. In some embodiments, the method further includes depositing second material on the sheet to cover the plurality of cells; and removing a subset of second material to separate a plurality of cells from the first sheet.
摘要翻译：本发明提供一种薄膜锂电池的制造方法，其特征在于，在正极集电体，阴极材料，阳极集电体以及将阴极材料与阳极集电体分离成基板的电解质层的基础上，该层包含至少部分通过光刻操作图案化的锂化化合物，其包括通过包括湿化学处理的方法从含有锂化合物的层除去光致抗蚀剂材料。另外，提供一种第一片材制造锂电池的方法和装置，所述第一片材包括具有阴极材料的衬底，阳极材料和将阳极材料与阳极材料分离的LiPON阻挡/电解质层; 以及去除第一材料的子集以将多个细胞与第一片材分离。在一些实施例中，该方法还包括在片材上沉积第二材料以覆盖多个细胞; 以及移除第二材料的子集以从所述第一片分离多个细胞。

5. 发明授权

US07106073B1 Method and system for area efficient charge-based capacitance measurement 有权
标题翻译：用于区域高效充电电容测量的方法和系统
公开(公告)号：US07106073B1
公开(公告)日：2006-09-12
申请号：US11140142
申请日：2005-05-27
申请人： Randall Bach , Jeffrey Sather
发明人： Randall Bach , Jeffrey Sather
IPC分类号： G01R27/26
CPC分类号： G01R31/2884 , G01R31/2856
摘要： The present invention is directed to a system for area efficient charge-based capacitance measurement requiring a minimum silicon area for probe pads. A structure block for the system includes several test structures coupled to a target test capacitance structure, a reference structure, and a logic block. Each test structure is coupled to a corresponding test capacitance structure. The logic block coupled to the several test structures selects a desirable test structure from the several test structures. The system may include several structure blocks and an additional logic block to select a desirable structure block. Each structure block includes a single output pin for busing each test output from the several test structures. In this manner, the silicon area may be minimized through reduction of the number of total pins and probe pads required.
摘要翻译：本发明涉及一种用于区域高效的基于电荷的电容测量的系统，其需要用于探针焊盘的最小硅面积。该系统的结构块包括耦合到目标测试电容结构，参考结构和逻辑块的若干测试结构。每个测试结构耦合到相应的测试电容结构。耦合到若干测试结构的逻辑块从几个测试结构中选择期望的测试结构。该系统可以包括几个结构块和用于选择期望的结构块的附加逻辑块。每个结构块包括一个单个输出引脚，用于引导来自多个测试结构的每个测试输出。以这种方式，可以通过减少所需的总引脚和探针焊盘的数量来最小化硅面积。

6. 发明授权

US07029926B2 Double density MRAM with planar processing 有权
标题翻译：双重密度MRAM，具有平面加工
公开(公告)号：US07029926B2
公开(公告)日：2006-04-18
申请号：US10991876
申请日：2004-11-18
申请人： Allan T. Hurst , Jeffrey Sather , Jason B. Gadbois
发明人： Allan T. Hurst , Jeffrey Sather , Jason B. Gadbois
IPC分类号： H01L21/00
CPC分类号： G11C11/15 , H01L27/222 , H01L29/66984
摘要： The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.
摘要翻译：半导体行业寻求用改进的非易失性存储器件替代传统的易失性存储器件。对显着高效，高效和非易失性数据保留技术的需求的增加推动了集成磁存储器结构的发展。在一个方面，本教导涉及高密度配置中的磁存储器结构制造技术，其包括用于编程高密度磁存储器结构的有效装置。

7. 发明申请

US20090073757A1 DOUBLE DENSITY MRAM WITH PLANAR PROCESSING 有权
标题翻译：双重密度MRAM与平面加工
公开(公告)号：US20090073757A1
公开(公告)日：2009-03-19
申请号：US12277554
申请日：2008-11-25
申请人： Allan T. Hurst , Jeffrey Sather , Jason B. Gadbois
发明人： Allan T. Hurst , Jeffrey Sather , Jason B. Gadbois
IPC分类号： G11C11/14 , G11C11/02
CPC分类号： G11C11/15 , H01L27/222 , H01L29/66984
摘要： The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.
摘要翻译：半导体行业寻求用改进的非易失性存储器件替代传统的易失性存储器件。对显着高效，高效和非易失性数据保留技术的需求的增加推动了集成磁存储器结构的发展。在一个方面，本教导涉及高密度配置中的磁存储器结构制造技术，其包括用于编程高密度磁存储器结构的有效装置。

8. 发明申请

US20080001577A1 Thin-film battery recharging systems and methods 审中-公开
标题翻译：薄膜电池充电系统及方法
公开(公告)号：US20080001577A1
公开(公告)日：2008-01-03
申请号：US11824708
申请日：2007-07-02
申请人： Jeffrey Sather
发明人： Jeffrey Sather
IPC分类号： H02J7/04
CPC分类号： H01M10/46 , B60C23/0411 , B60C23/0413 , H01M10/0562 , H01M10/465 , H02J7/02 , H02J7/025 , H02J7/32 , H02J7/355 , H02J50/00 , H02J50/10
摘要： The present invention provides recharging systems and methods for solid state thin-film batteries. Recharging systems and methods in accordance with the present invention include circuits that receive energy that can be used for recharging from sources such as solar cells, magnetic induction, thermoelectric devices, and piezoelectric materials.
摘要翻译：本发明提供了固态薄膜电池的充电系统和方法。根据本发明的充电系统和方法包括接收能够用于从诸如太阳能电池，磁感应，热电装置和压电材料的源再充电的能量的电路。

9. 发明授权

US07821048B2 Double density MRAM with planar processing 有权
标题翻译：双重密度MRAM，具有平面加工
公开(公告)号：US07821048B2
公开(公告)日：2010-10-26
申请号：US12277554
申请日：2008-11-25
申请人： Allan T. Hurst , Jeffrey Sather , Jason B. Gadbois
发明人： Allan T. Hurst , Jeffrey Sather , Jason B. Gadbois
IPC分类号： H01L29/66 , H01L21/00
CPC分类号： G11C11/15 , H01L27/222 , H01L29/66984
摘要： The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.
摘要翻译：半导体行业寻求用改进的非易失性存储器件替代传统的易失性存储器件。对显着高效，高效和非易失性数据保留技术的需求的增加推动了集成磁存储器结构的发展。在一个方面，本教导涉及高密度配置中的磁存储器结构制造技术，其包括用于编程高密度磁存储器结构的有效装置。

10. 发明申请

US20060183251A1 Double density MRAM with planar processing 有权
公开(公告)号：US20060183251A1
公开(公告)日：2006-08-17
申请号：US11401153
申请日：2006-04-10
申请人： Allan Hurst , Jeffrey Sather , Jason Gadbois
发明人： Allan Hurst , Jeffrey Sather , Jason Gadbois
IPC分类号： H01L21/00
CPC分类号： G11C11/15 , H01L27/222 , H01L29/66984
摘要： The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

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