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    • 3. 发明申请
    • Compact stabilized full-band power amplifier arrangement
    • 紧凑型稳定全频带功率放大器装置
    • US20070229186A1
    • 2007-10-04
    • US11395826
    • 2006-03-31
    • Jonathan HackerMoonil Kim
    • Jonathan HackerMoonil Kim
    • H01P5/12
    • H01Q13/085H01P5/1007H01P5/107
    • High frequency power amplification modules comprise a dielectric substrate supporting a stepped impedance transition coupled to the input of a power amplifier and a symmetrically disposed stepped impedance transition connected to the output of the power amplifier. The power amplification modules are oriented in an electromagnetic energy field so that input electromagnetic energy is coupled to the input of the power amplifier by the input side stepped impedance transition, amplified by the amplifier, and emitted from the module by the output side stepped impedance transition. A plurality of the power amplification modules may be organized into an array to provide a power combiner. The power amplification modules in the array may be linked by isolation impedances that decouple the modules in the array.
    • 高频功率放大模块包括支持耦合到功率放大器的输入的阶梯式阻抗跃迁的介质衬底和连接到功率放大器的输出的对称设置的阶梯式阻抗转变。 功率放大模块在电磁能场中定向,使得输入电磁能通过输入侧阶跃阻抗转换耦合到功率放大器的输入,由放大器放大,并通过输出侧阶跃阻抗转换从模块发射 。 多个功率放大模块可以被组织成阵列以提供功率组合器。 阵列中的功率放大模块可以通过使阵列中的模块分离的隔离阻抗来链接。
    • 7. 发明申请
    • GALLIUM NITRIDE SWITCH METHODOLOGY
    • 硝酸盐开关方法
    • US20100097119A1
    • 2010-04-22
    • US12256321
    • 2008-10-22
    • Yin Tat MaJonathan HackerKarim S. Boutros
    • Yin Tat MaJonathan HackerKarim S. Boutros
    • H03K17/687
    • H01P1/15
    • Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.
    • 提供了用于选择性地切换信号的使用基于氮化镓(GaN)的晶体管的器件和系统。 第一传输线被配置为连接公共连接和第一连接。 第一基于氮化镓的(GaN基)晶体管具有在第一点处耦合到第一传输线的第一端子,耦合到相对地的第二端子,以及被配置为耦合到第一控制连接 。 第二GaN基晶体管具有在第二点处耦合到第一传输线的第一端子,被配置为耦合到相对地的第二端子,以及被配置为耦合到第一控制连接的第三端子。
    • 9. 发明授权
    • Gallium nitride switch methodology
    • 氮化镓开关方法
    • US07893791B2
    • 2011-02-22
    • US12256321
    • 2008-10-22
    • Yin Tat MaJonathan HackerKarim S. Boutros
    • Yin Tat MaJonathan HackerKarim S. Boutros
    • H01P1/10H01P5/12
    • H01P1/15
    • Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.
    • 提供了用于选择性地切换信号的使用基于氮化镓(GaN)的晶体管的器件和系统。 第一传输线被配置为连接公共连接和第一连接。 第一基于氮化镓的(GaN基)晶体管具有在第一点处耦合到第一传输线的第一端子,耦合到相对地的第二端子,以及被配置为耦合到第一控制连接 。 第二GaN基晶体管具有在第二点处耦合到第一传输线的第一端子,被配置为耦合到相对地的第二端子,以及被配置为耦合到第一控制连接的第三端子。