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    • 2. 发明申请
    • Blower and design method of discharge port thereof
    • US20060086734A1
    • 2006-04-27
    • US11253746
    • 2005-10-20
    • Sung SongSang SohnJe Lee
    • Sung SongSang SohnJe Lee
    • H05B6/64
    • H05B6/6423
    • A blower comprising: a centrifugal fan; a driving unit for rotating the centrifugal fan; a bracket including a base fixedly-coupled to one side of the driving unit and a protrusion protruded from the base in a shaft direction of the centrifugal fan; and a fan housing fixedly-coupled to the bracket so as to rotatably receive the centrifugal fan, and including a suction port formed at one side of the bracket in the shaft direction of the centrifugal fan so as to suck air by the rotation of the centrifugal fan, and a discharge port formed in a perpendicular direction of the suction port, for discharging the air sucked through the suction port, wherein one side of the discharge port is formed in ‘V’ shape by a first inclination surface formed in the protrusion of the bracket and a second inclination surface formed at the fan housing which is contact with one end of the protrusion, and at least one of the first and second inclination surfaces is formed in a curved line so as to increase a discharge area of the discharge port, whereby a flow rate discharged through the discharge port can uniformly be distributed so as to reduce noise and simultaneously increase a discharged air volume.
    • 3. 发明申请
    • Thin film transistor array panel and manufacturing method therefor
    • 薄膜晶体管阵列及其制造方法
    • US20060065892A1
    • 2006-03-30
    • US11234470
    • 2005-09-23
    • Je LeeYang BaeBeom ChoChang Jeong
    • Je LeeYang BaeBeom ChoChang Jeong
    • H01L29/04
    • H01L29/458G02F1/1368H01L27/12H01L27/124H01L27/1288
    • A thin film transistor array panel includes a source electrode and a drain electrode composed of a Mo alloy layer and a Cu layer, and an alloying element of the Mo alloy layer forms a nitride layer as a diffusion barrier against the Cu layer. The nitride layer can be formed between the Mo alloy layer and the Cu layer, between the Mo alloy layer and the semiconductor layer or in the Mo alloy layer. A method of fabricating a thin film transistor array panel includes forming a data line having a first conductive layer and a second conductive layer, the first conductive layer containing a Mo alloy and the second conductive layer containing Cu, and performing a nitrogen treatment so that an alloying element in the first conductive layer forms a nitride layer. The nitrogen treatment can be performed before forming the first conductive layer, after forming the first conductive layer, or during forming the first conductive layer.
    • 薄膜晶体管阵列面板包括由Mo合金层和Cu层构成的源电极和漏电极,Mo合金层的合金元素形成氮化物层作为对Cu层的扩散阻挡层。 可以在Mo合金层和Cu层之间,Mo合金层和半导体层之间或Mo合金层中形成氮化物层。 制造薄膜晶体管阵列面板的方法包括:形成具有第一导电层和第二导电层的数据线,所述第一导电层含有Mo合金,所述第二导电层含有Cu,并进行氮处理,使得 第一导电层中的合金元素形成氮化物层。 在形成第一导电层之前,在形成第一导电层之后,或者在形成第一导电层期间,可以进行氮处理。
    • 4. 发明申请
    • METHOD OF FABRICATING A THIN FILM TRANSISTOR ARRAY PANEL
    • 制造薄膜晶体管阵列的方法
    • US20080038885A1
    • 2008-02-14
    • US11844597
    • 2007-08-24
    • Je LeeYang BaeBeom ChoChang Jeong
    • Je LeeYang BaeBeom ChoChang Jeong
    • H01L31/0392
    • H01L29/458G02F1/1368H01L27/12H01L27/124H01L27/1288
    • A thin film transistor array panel includes a source electrode and a drain electrode composed of a Mo alloy layer and a Cu layer, and an alloying element of the Mo alloy layer forms a nitride layer as a diffusion barrier against the Cu layer. The nitride layer can be formed between the Mo alloy layer and the Cu layer, between the Mo alloy layer and the semiconductor layer or in the Mo alloy layer. A method of fabricating a thin film transistor array panel includes forming a data line having a first conductive layer and a second conductive layer, the first conductive layer containing a Mo alloy and the second conductive layer containing Cu, and performing a nitrogen treatment so that an alloying element in the first conductive layer forms a nitride layer. The nitrogen treatment can be performed before forming the first conductive layer, after forming the first conductive layer, or during forming the first conductive layer.
    • 薄膜晶体管阵列面板包括由Mo合金层和Cu层构成的源电极和漏电极,Mo合金层的合金元素形成氮化物层作为对Cu层的扩散阻挡层。 可以在Mo合金层和Cu层之间,Mo合金层和半导体层之间或Mo合金层中形成氮化物层。 制造薄膜晶体管阵列面板的方法包括:形成具有第一导电层和第二导电层的数据线,所述第一导电层含有Mo合金,所述第二导电层含有Cu,并进行氮处理,使得 第一导电层中的合金元素形成氮化物层。 在形成第一导电层之前,在形成第一导电层之后,或者在形成第一导电层期间,可以进行氮处理。
    • 8. 发明申请
    • Over-the-Range (OTR) microwave oven
    • 超范围(OTR)微波炉
    • US20060175322A1
    • 2006-08-10
    • US11324335
    • 2006-01-04
    • Seung BeakSang SohnJe LeeSung Song
    • Seung BeakSang SohnJe LeeSung Song
    • H05B6/64
    • H05B6/6429F24C15/20
    • An over-the-hood (OTR) microwave oven includes: a main body installed above a cooking source of a gas range and having therein a cavity and an electric equipment chamber in which a magnetron is located; an air exhaust path installed inside the main body and providing a path through which air generated from the cooking source which is introduced through a suction port formed at the bottom of the main body by a suction force of a blower installed at the main body is exhausted to the outside of the main body; and an airstream guide path installed inside the main body and providing a path through which air inside the electric equipment chamber is discharged to a front end portion of the bottom of the main body by a flow generating apparatus installed inside the electric equipment chamber in order to guide air from the cooking source to the suction port, so that delightfulness of a cooking environment is obtained by blocking air containing cooking by-products which used to flow toward the face of the cook, thereby improving product reliability and competitiveness.
    • 一种超引擎(OTR)微波炉包括:安装在气体范围的烹饪源上方的主体,并且其中具有空腔和电子设备室,磁控管所在的主体; 排气路径,其设置在主体内部,并且提供通过由主体的底部的吸入口引入的烹调源产生的空气通过排气装置的排风装置排出的路径 到主体外面; 以及安装在主体内部的气流引导路径,并且设置通过安装在电气设备室内的流量发生装置将电气设备室内的空气排放到主体的底部的前端部分的路径,以便 引导从烹饪源到吸入口的空气,从而通过阻止含有烹饪副产品的空气来获得烹饪环境的令人愉快的气味,从而提高产品的可靠性和竞争力。