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1. 发明授权

US08766375B2 Composite semiconductor device with active oscillation prevention 有权
标题翻译：具有主动振荡防护的复合半导体器件
公开(公告)号：US08766375B2
公开(公告)日：2014-07-01
申请号：US13417143
申请日：2012-03-09
申请人： Tony Bramian , Jason Zhang
发明人： Tony Bramian , Jason Zhang
IPC分类号： H01L27/088 , H01L21/8236
CPC分类号： H01L27/085 , H01L21/8236 , H01L21/8258 , H01L25/18 , H01L27/0883 , H01L29/16 , H01L29/2003 , H01L29/78 , H01L2924/0002 , H03K17/107 , H03K17/168 , H03K17/302 , H03K17/567 , H01L2924/00
摘要： There are disclosed herein various implementations of composite semiconductor devices with active oscillation control. In one exemplary implementation, a normally OFF composite semiconductor device comprises a normally ON III-nitride power transistor and a low voltage (LV) device cascoded with the normally ON III-nitride power transistor to form the normally OFF composite semiconductor device. The LV device may be configured to include one or both of a reduced output resistance due to, for example, a modified body implant and a reduced transconductance due to, for example, a modified oxide thickness to cause a gain of the composite semiconductor device to be less than approximately 10,000.
摘要翻译：这里公开了具有主动振荡控制的复合半导体器件的各种实现方式。在一个示例性实施方式中，正常关闭复合半导体器件包括通常为ON III族氮化物功率晶体管和与常规ON III族氮化物功率晶体管共同组成的低电压（LV）器件，以形成正常关闭复合半导体器件。 LV器件可以被配置为包括由于例如修改的体植入物引起的减小的输出电阻中的一个或两个，以及由于例如修改的氧化物厚度导致的复合半导体器件的增益的减小的跨导小于约10,000。

2. 发明授权

US08957642B2 Enhancement mode III-nitride switch with increased efficiency and operating frequency 有权
公开(公告)号：US08957642B2
公开(公告)日：2015-02-17
申请号：US12383675
申请日：2009-03-26
申请人： Tony Bramian , Jason Zhang
发明人： Tony Bramian , Jason Zhang
IPC分类号： G05F1/70 , H01L27/06 , H01L21/8258 , H03K17/30 , H03K17/567 , H03K17/74 , H03K17/687
CPC分类号： H01L27/0629 , H01L21/8258 , H01L27/0605 , H01L29/16 , H01L29/2003 , H03K17/302 , H03K17/567 , H03K17/74 , H03K2017/6875
摘要： According to one exemplary embodiment, an efficient and high speed E-mode III-N/Schottky switch includes a silicon transistor coupled with a D-mode III-nitride device, where the silicon transistor causes the D-mode III-nitride device to operate in an enhancement mode. The E-mode III-N/Schottky switch further includes a Schottky diode coupled across the silicon transistor so as to improve efficiency, recovery time, and speed of the E-mode III-N/Schottky switch. An anode of the Schottky diode can be coupled to a source of the silicon transistor and a cathode of the Schottky diode can be coupled to a drain of the silicon transistor. The Schottky diode can be integrated with the silicon transistor. In one embodiment the III-nitride device is a GaN device.

3. 发明申请

US20130234208A1 Composite Semiconductor Device with Active Oscillation Prevention 有权
标题翻译：具有主动振荡防护的复合半导体器件
公开(公告)号：US20130234208A1
公开(公告)日：2013-09-12
申请号：US13417143
申请日：2012-03-09
申请人： Tony Bramian , Jason Zhang
发明人： Tony Bramian , Jason Zhang
IPC分类号： H01L27/088
CPC分类号： H01L27/085 , H01L21/8236 , H01L21/8258 , H01L25/18 , H01L27/0883 , H01L29/16 , H01L29/2003 , H01L29/78 , H01L2924/0002 , H03K17/107 , H03K17/168 , H03K17/302 , H03K17/567 , H01L2924/00
摘要： There are disclosed herein various implementations of composite semiconductor devices with active oscillation control. In one exemplary implementation, a normally OFF composite semiconductor device comprises a normally ON III-nitride power transistor and a low voltage (LV) device cascoded with the normally ON III-nitride power transistor to form the normally OFF composite semiconductor device. The LV device may be configured to include one or both of a reduced output resistance due to, for example, a modified body implant and a reduced transconductance due to, for example, a modified oxide thickness to cause a gain of the composite semiconductor device to be less than approximately 10,000.
摘要翻译：这里公开了具有主动振荡控制的复合半导体器件的各种实现方式。在一个示例性实施方式中，正常关闭复合半导体器件包括通常为ON III族氮化物功率晶体管和与常规ON III族氮化物功率晶体管共同组成的低电压（LV）器件，以形成正常关闭复合半导体器件。 LV器件可以被配置为包括由于例如修改的体植入物引起的减小的输出电阻中的一个或两个，以及由于例如修改的氧化物厚度导致的复合半导体器件的增益的减小的跨导小于约10,000。

4. 发明授权

US09859882B2 High voltage composite semiconductor device with protection for a low voltage device 有权
公开(公告)号：US09859882B2
公开(公告)日：2018-01-02
申请号：US13416252
申请日：2012-03-09
申请人： Jason Zhang , Tony Bramian
发明人： Jason Zhang , Tony Bramian
IPC分类号： H03K17/081 , H03K17/10 , H03K17/567
CPC分类号： H03K17/08116 , H03K17/107 , H03K17/567
摘要： There are disclosed herein various implementations of composite semiconductor devices including a voltage protected device. In one exemplary implementation, a normally OFF composite semiconductor device comprises a normally ON III-nitride power transistor having a first output capacitance, and a low voltage (LV) device cascoded with the normally ON III-nitride power transistor to form the normally OFF composite semiconductor device, the LV device having a second output capacitance. A ratio of the first output capacitance to the second output capacitance is set based on a ratio of a drain voltage of the normally ON III-nitride power transistor to a breakdown voltage of the LV device so as to provide voltage protection for the LV device.

5. 发明申请

US20120241756A1 High Voltage Composite Semiconductor Device with Protection for a Low Voltage Device 有权
标题翻译：具有低压器件保护的高压复合半导体器件
公开(公告)号：US20120241756A1
公开(公告)日：2012-09-27
申请号：US13416252
申请日：2012-03-09
申请人： Jason Zhang , Tony Bramian
发明人： Jason Zhang , Tony Bramian
IPC分类号： H01L29/20 , H01L27/06
CPC分类号： H03K17/08116 , H03K17/107 , H03K17/567
摘要： There are disclosed herein various implementations of composite semiconductor devices including a voltage protected device. In one exemplary implementation, a normally OFF composite semiconductor device comprises a normally ON III-nitride power transistor having a first output capacitance, and a low voltage (LV) device cascoded with the normally ON III-nitride power transistor to form the normally OFF composite semiconductor device, the LV device having a second output capacitance. A ratio of the first output capacitance to the second output capacitance is set based on a ratio of a drain voltage of the normally ON III-nitride power transistor to a breakdown voltage of the LV device so as to provide voltage protection for the LV device.
摘要翻译：这里公开了包括电压保护装置的复合半导体器件的各种实施方式。在一个示例性实施例中，正常关闭复合半导体器件包括具有第一输出电容的正常的III-III族氮化物功率晶体管和与正常的III型氮化物功率晶体管共同形成正常关断复合的低电压（LV）器件半导体器件，LV器件具有第二输出电容。第一输出电容与第二输出电容的比例基于正常导通的III族氮化物功率晶体管的漏极电压与LV器件的击穿电压的比设定，以便为LV器件提供电压保护。

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