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1. 发明申请

US20160233417A1 MAGNETIC MEMORY DEVICE 审中-公开
公开(公告)号：US20160233417A1
公开(公告)日：2016-08-11
申请号：US15098503
申请日：2016-04-14
申请人： Jangeun Lee , Sechung OH , Jeahyoung LEE , Woojin KIM , Junho JEONG , Woo Chang LIM
发明人： Jangeun Lee , Sechung OH , Jeahyoung LEE , Woojin KIM , Junho JEONG , Woo Chang LIM
IPC分类号： H01L43/10 , H01L27/22 , H01L43/08
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

2. 发明申请

US20140353784A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20140353784A1
公开(公告)日：2014-12-04
申请号：US14464835
申请日：2014-08-21
申请人： Jangeun LEE , Sechung OH , Jeahyoung LEE , Woojin KIM , Junho JEONG , Woo Chang LIM
发明人： Jangeun LEE , Sechung OH , Jeahyoung LEE , Woojin KIM , Junho JEONG , Woo Chang LIM
IPC分类号： H01L43/10 , H01L27/22
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
摘要翻译：提供磁存储器件。所述磁存储器件包括：衬底上的第一垂直磁性层和第二垂直磁性层，所述第一垂直磁性层和所述第二垂直磁性层之间的隧道势垒层，以及位于所述第一垂直磁性层之间的交换耦合层，第一垂直磁性层和第一垂直磁性层的第二子层。

3. 发明申请

US20150145081A1 MAGNETIC MEMORY DEVICES HAVING A UNIFORM PERPENDICULAR NONMAGNETIC RICH ANTISOTROPY ENHANCED PATTERN 审中-公开
标题翻译：具有均匀性的非磁性非线性强磁性增强图案的磁记忆体装置
公开(公告)号：US20150145081A1
公开(公告)日：2015-05-28
申请号：US14614724
申请日：2015-02-05
申请人： Sechung OH , Jangeun LEE , Woojin KIM , Heeju SHIN
发明人： Sechung OH , Jangeun LEE , Woojin KIM , Heeju SHIN
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及控制磁性图案的磁化方向的方法。在磁存储器件中，不平行于自由图案的一个表面的原子磁矩在自由图案中增加。因此，可以减小磁存储器件的临界电流密度，使得磁存储器件的功耗被降低或最小化，和/或磁存储器件被改进或优化以达到更高的集成度。

4. 发明申请

US20140183674A1 MAGNETIC MEMORY DEVICES HAVING A UNIFORM PERPENDICULAR NONMAGNETIC RICH ANTISOTROPY ENHANCED PATTERN 有权
标题翻译：具有均匀性的非磁性非线性强磁性增强图案的磁记忆体装置
公开(公告)号：US20140183674A1
公开(公告)日：2014-07-03
申请号：US14196666
申请日：2014-03-04
申请人： Sechung OH , Jangeun LEE , Woojin KIM , Heeju SHIN
发明人： Sechung OH , Jangeun LEE , Woojin KIM , Heeju SHIN
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及控制磁性图案的磁化方向的方法。在磁存储器件中，不平行于自由图案的一个表面的原子磁矩在自由图案中增加。因此，可以减小磁存储器件的临界电流密度，使得磁存储器件的功耗被降低或最小化，和/或磁存储器件被改进或优化以达到更高的集成度。

5. 发明申请

US20150104883A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150104883A1
公开(公告)日：2015-04-16
申请号：US14306976
申请日：2014-06-17
申请人： Whankyun KIM , Woojin KIM , Woo Chang LIM
发明人： Whankyun KIM , Woojin KIM , Woo Chang LIM
IPC分类号： H01L43/12 , H01L43/08 , H01L27/22 , C23C14/35
CPC分类号： H01L43/12 , C23C14/046 , C23C14/35 , H01J37/3408 , H01L27/228 , H01L43/08
摘要： A method of fabricating a semiconductor device includes providing a wafer in a chamber of a point-cusp magnetron physical vapor deposition (PCM-PVD) apparatus, the chamber including a metal target. The method further includes providing an inert gas and a reactive gas in the chamber and forming an amorphous conductive layer on the wafer by reacting the reactive gas with a metal atom separated from the metal target by the inert gas.
摘要翻译：制造半导体器件的方法包括在点尖磁控管物理气相沉积（PCM-PVD）设备的腔室中提供晶片，所述腔室包括金属靶。该方法还包括在室中提供惰性气体和反应性气体，并通过使惰性气体与金属靶分离的金属原子反应而在晶片上形成非晶形导电层。

6. 发明申请

US20170092851A1 MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20170092851A1
公开(公告)日：2017-03-30
申请号：US15244344
申请日：2016-08-23
申请人： Shinhee HAN , Kiseok SUH , KyungTae NAM , Woojin KIM , Kwangil SHIN , Minkyoung JOO , Gwanhyeob KOH
发明人： Shinhee HAN , Kiseok SUH , KyungTae NAM , Woojin KIM , Kwangil SHIN , Minkyoung JOO , Gwanhyeob KOH
IPC分类号： H01L43/12 , G11C11/16 , H01L43/10 , H01L27/22 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/226 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A method of fabricating a magnetic memory device includes forming an interlayered insulating layer on a substrate, forming a landing pad to pass through the interlayered insulating layer, forming a protection insulating layer on the interlayered insulating layer to cover a top surface of the landing pad, forming a bottom electrode to pass through the protection insulating layer and through the interlayered insulating layer, forming a magnetic tunnel junction layer on the protection insulating layer; and patterning the magnetic tunnel junction layer to form a magnetic tunnel junction pattern on the bottom electrode.

7. 发明申请

US20170110301A1 Sputtering Apparatuses and Methods of Manufacturing a Magnetic Memory Device Using the Same 有权
公开(公告)号：US20170110301A1
公开(公告)日：2017-04-20
申请号：US15202597
申请日：2016-07-06
申请人： Joonmyoung LEE , Woojin KIM
发明人： Joonmyoung LEE , Woojin KIM
IPC分类号： H01J37/34 , H01J37/32 , H01L43/12 , H01L43/08 , H01L43/10 , C23C14/34 , H01L27/22
CPC分类号： H01J37/3488 , C23C14/08 , C23C14/3464 , C23C14/505 , H01J37/32715 , H01J37/34 , H01J37/3426 , H01J37/3447 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A sputtering apparatus includes a process chamber in which a sputtering process is performed, a substrate holder provided in the process chamber and fixing a horizontal position of a substrate during the sputtering process, and a first sputter gun provided to be vertically spaced apart from the substrate in the process chamber. The first sputter gun is spaced apart from the substrate by a first horizontal distance during the sputtering process. The first sputter gun is fixed during the sputtering process. The first horizontal distance is a horizontal distance between the substrate and the first sputter gun when viewed from a plan view.

8. 发明申请

US20120061775A1 DEVICE FOR USE AS DUAL-SIDED SENSOR PACKAGE 有权
标题翻译：用作双面传感器封装的设备
公开(公告)号：US20120061775A1
公开(公告)日：2012-03-15
申请号：US12879143
申请日：2010-09-10
申请人： Woojin KIM , Aniela Bryzek , John Dancaster , Dong-Suk Kim
发明人： Woojin KIM , Aniela Bryzek , John Dancaster , Dong-Suk Kim
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： B60C23/0408 , G01D11/245 , G01L19/0084 , G01L19/141 , G01L19/147 , H01L2224/48091 , H01L2224/49171 , H01L2924/00014
摘要： A sensor package, and in one embodiment a sensor package for surface mount applications, that comprises a leadframe with an upper and lower surface for receiving a device thereon. Embodiments of the sensor package comprise a first device secured to the upper surface, and a second device secured to the lower surface so as to place connective pads from each of the first device and the second device proximate to one side of the leadframe. The sensor package further comprises a lead that is positioned in the sensor package in a manner that prevents electrical connection with circuitry that is external of the housing. The lead has an end proximate the side of the lead frame where the connective pads are positioned on the upper and lower surfaces. The end configured to receive connections, e.g., wirebonds, from the connective pads in a manner connecting the first device and the second device independent of any external connections of the sensor package.
摘要翻译：传感器封装，并且在一个实施例中用于表面贴装应用的传感器封装，其包括具有用于在其上接收器件的上表面和下表面的引线框架。传感器封装的实施例包括固定到上表面的第一器件和固定到下表面的第二器件，以便将连接焊盘从第一器件和第二器件中的每一个靠近引线框架的一侧放置。传感器封装还包括以防止与壳体外部的电路的电连接的方式定位在传感器封装中的引线。引线具有靠近引线框架侧面的端部，其中连接焊盘位于上表面和下表面上。该端被配置为以连接第一设备和第二设备的方式从连接焊盘接收连接，例如引线键，而与传感器封装的任何外部连接无关。

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