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    • 9. 发明授权
    • Nonvolatile semiconductor device
    • 非易失性半导体器件
    • US08976593B2
    • 2015-03-10
    • US13453152
    • 2012-04-23
    • Dae-Il ChoiJin-Su ParkByoung-Sung YooJae-Ho Lee
    • Dae-Il ChoiJin-Su ParkByoung-Sung YooJae-Ho Lee
    • G11C16/04G11C16/24G11C16/30
    • G11C16/0483G11C16/24G11C16/30
    • A nonvolatile memory device includes a plurality of global word lines, a voltage pump configured to generate a plurality of voltages, a control unit configured to divide the plurality of global word lines into a first group and a second group in response to an input row address and generate control signals, a first selection unit configured to output at least two different voltages that are to be applied to global word lines of the first group, a second selection unit configured to output a voltage that is to be applied to global word lines of the second group, and a third selection unit configured to apply output voltages of the first selection unit to the global word lines of the first group, and apply an output voltage of the second selection unit to the global word lines of the second group.
    • 非易失性存储器件包括多个全局字线,配置为产生多个电压的电压泵,配置成响应于输入行地址将多个全局字线分成第一组和第二组的控制单元 并产生控制信号;第一选择单元,被配置为输出要施加到第一组的全局字线的至少两个不同的电压;第二选择单元,被配置为输出要施加到第一组的全局字线的电压; 第二组和第三选择单元,被配置为将第一选择单元的输出电压施加到第一组的全局字线,并将第二选择单元的输出电压施加到第二组的全局字线。