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    • 6. 发明申请
    • Electron emission device and electron emission display using the same
    • 电子发射器件和使用其的电子发射显示器
    • US20050248257A1
    • 2005-11-10
    • US11090701
    • 2005-03-24
    • Seung Yoo
    • Seung Yoo
    • H01J29/04H01J1/30H01J1/304H01J1/62H01J3/02H01J29/02H01J29/48H01J31/12H01J63/04
    • H01J29/481H01J3/021H01J31/127
    • Disclosed is an electron emission device and an electron emission display using the same, wherein the electron emission device has an improved structure for focusing an electron beam. The electron emission device comprises: first and second electrodes formed on a plate and spaced from each other by a predetermined distance; an insulator formed on the entire area of the plate and formed with an opening through which a portion of the first electrode between the first and second electrodes is at least partially exposed; an electron emitter formed on a predetermined region of the first electrode and exposed through the opening; and a third electrode formed on the insulator and connected to the second electrode, wherein a voltage difference between the first and second electrodes causes the electron emitter to emit an electron and the emitted electron is focused by the third electrode.
    • 公开了一种使用其的电子发射器件和电子发射显示器,其中电子发射器件具有改进的用于聚焦电子束的结构。 电子发射装置包括:形成在板上并彼此间隔预定距离的第一和第二电极; 形成在所述板的整个区域上并形成有开口的绝缘体,所述第一和第二电极之间的所述第一电极的一部分至少部分地暴露在所述开口中; 电子发射体,形成在第一电极的预定区域上并通过开口露出; 以及形成在所述绝缘体上并连接到所述第二电极的第三电极,其中所述第一和第二电极之间的电压差导致所述电子发射体发射电子,并且所发射的电子被所述第三电极聚焦。
    • 9. 发明申请
    • Vertical GaN light emitting diode and method for manufacturing the same
    • 垂直GaN发光二极管及其制造方法
    • US20050173692A1
    • 2005-08-11
    • US10601597
    • 2003-06-24
    • Young ParkHun HahmJeong NaSeung Yoo
    • Young ParkHun HahmJeong NaSeung Yoo
    • H01L21/00H01L29/06H01L33/10H01L33/32H01L33/34
    • H01L33/0079H01L33/0095H01L33/32H01L2221/68363
    • Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.
    • 公开了一种垂直GaN发光二极管及其制造方法。 垂直GaN发光二极管包括具有形成在其上的第一接触面的上表面的第一导电GaN包覆层,形成在第一导电GaN包层的下表面上的有源层,形成在第一导电GaN包覆层上的第二导电GaN包覆层 有源层的下表面,形成在第二导电GaN包覆层上的导电粘合剂层和形成在导电粘合剂层的下表面上的形成有第二接触的下表面的导电基板。 用于制造垂直GaN发光二极管的方法包括从发光结构去除蓝宝石衬底的步骤,以防止对结构的GaN单晶面的损坏。
    • 10. 发明申请
    • Liquid crystal display panel, method for driving the same, and liquid crystal display apparatus using the same
    • 液晶显示面板及其驱动方法以及使用其的液晶显示装置
    • US20070070008A1
    • 2007-03-29
    • US11524022
    • 2006-09-19
    • Kyoung ShinHak ChangYeon KimSeung YooHyun KimHee Do
    • Kyoung ShinHak ChangYeon KimSeung YooHyun KimHee Do
    • G09G3/36
    • G09G3/3648G02F2001/134345G09G3/3696G09G2300/0443G09G2300/0447G09G2320/0673
    • Disclosed is a liquid crystal display panel, a method for driving the same, and a liquid crystal display apparatus using the same which can improve visibility and transmittance in a multi-domain VA mode. The liquid crystal display panel includes a plurality of sub-pixels each having first and second gray scale regions which are split up and down and have different areas, the first and second gray scale regions of one sub-pixel having a staggered arrangement with respect to those of an adjacent sub-pixel; a plurality of thin film transistors for independently driving the first and second gray scale regions; a plurality of data lines connected to the thin film transistors, for generating first and second data signals to be respectively supplied to the first and second gray scale regions; and a plurality of gate lines for driving the plurality of thin film transistors by a horizontal period unit. The thin film transistors are connected to the first and second gray scale regions so that the first gray scale regions are driven when one of the plurality of gate lines is driven and the second gray scale regions are driven when another gate line is driven.
    • 公开了一种液晶显示面板及其驱动方法,以及使用该液晶显示面板的液晶显示装置,能够提高多域VA模式的可见度和透射率。 液晶显示面板包括多个子像素,每个子像素具有上下分割的第一和第二灰度区域,具有不同的区域,一个子像素的第一和第二灰度区域相对于 相邻子像素的那些; 多个用于独立地驱动第一和第二灰度区域的薄膜晶体管; 连接到薄膜晶体管的多条数据线,用于产生分别提供给第一和第二灰度区的第一和第二数据信号; 以及用于通过水平周期单位驱动多个薄膜晶体管的多个栅极线。 薄膜晶体管连接到第一和第二灰度区域,使得当多个栅极线中的一个被驱动时驱动第一灰度区域,并且当驱动另一个栅极线时驱动第二灰度区域。