专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5311775A Semiconductor flow sensor 失效
标题翻译：半导体流量传感器
公开(公告)号：US5311775A
公开(公告)日：1994-05-17
申请号：US805768
申请日：1991-12-12
申请人： Jan Suski , Minh-Trang Chau , Didier Dominguez
发明人： Jan Suski , Minh-Trang Chau , Didier Dominguez
IPC分类号： G01F1/68 , G01F1/684 , G01F1/692 , G01P5/12
CPC分类号： G01P5/12 , G01F1/6845
摘要： The flow rate sensor is made from a silicon substrate (1). A first face (A) of the substrate is provided with a heating element (2) disposed in a first region (R1) and with at least one thermometer component (4) disposed in a second region (R2), the first and second regions being insulated from each other by a third zone (R3) of oxidized porous silicon. According to the invention, the sensor is adapted to receive the flow of fluid (E) over the second face (B) of the substrate (1), with the first and second regions (R1, R2) forming respective thermal short circuits between the first and second faces (A, B) of said substrate.
摘要翻译：流量传感器由硅衬底（1）制成。衬底的第一面（A）设置有设置在第一区域（R1）中的加热元件（2）和设置在第二区域（R2）中的至少一个温度计部件（4），第一和第二区域通过氧化多孔硅的第三区（R3）彼此绝缘。根据本发明，传感器适于在衬底（1）的第二面（B）上接收流体流（E），第一和第二区域（R1，R2）在第一和第二区域（R1，R2）之间形成相应的热短路所述基片的第一和第二面（A，B）。

2. 发明授权

US5920391A Tunable Fabry-Perot filter for determining gas concentration 失效
标题翻译：用于确定气体浓度的可调式法布里 - 珀罗滤波器
公开(公告)号：US5920391A
公开(公告)日：1999-07-06
申请号：US064286
申请日：1998-04-22
申请人： Fran.cedilla.ois Grasdepot , Jan Suski
发明人： Fran.cedilla.ois Grasdepot , Jan Suski
IPC分类号： G01J3/26 , G01N21/35 , G02B26/00 , G01B9/02
CPC分类号： G01J3/26 , G01N21/3504 , G02B26/001
摘要： The invention provides a filter of the Fabry-Perot interferometer type for electromagnetic radiation having spectral density that is modified by a gas. The filter comprises a body which is transparent to said electromagnetic radiation, at least in its part through which the radiation passes. Said part comprises at least two portions possessing two facing surfaces that are mutually parallel and substantially plane. A "first" one of said portions is movable in a direction that is substantially perpendicular to the pair of facing surfaces. The filter further comprises: means for moving said facing surfaces between two extreme positions under the action of an electromagnetic field, and means for limiting adhesion between said surfaces in at least one of said positions in which said surfaces are at a distance apart which is small compared with the mean wavelength of the radiation passing through them.
摘要翻译：本发明提供了一种用于电磁辐射的法布里 - 珀罗干涉仪类型的滤波器，其具有由气体改变的光谱密度。该过滤器包括对所述电磁辐射透明的至少其辐射通过的部分的本体。所述部分包括具有彼此平行且基本平面的两个相对表面的至少两个部分。所述部分中的“第一”一个可在基本上垂直于该对相对表面的方向上移动。滤波器还包括：用于在电磁场的作用下在两个极限位置之间移动所述相对表面的装置，以及用于限制所述表面中的至少一个位置之间的所述表面之间的粘附的装置，其中所述表面的距离相差很小与通过它们的辐射的平均波长相比。

3. 发明授权

US5281836A Semiconductor sensor with perpendicular N and P-channel MOSFET's 失效
标题翻译：具有垂直N和P沟道MOSFET的半导体传感器
公开(公告)号：US5281836A
公开(公告)日：1994-01-25
申请号：US844616
申请日：1992-04-09
申请人： Vincent Mosser , Jan Suski
发明人： Vincent Mosser , Jan Suski
IPC分类号： H05B3/48 , H01L29/66 , H01L27/02 , H01L29/84 , H01L29/96
CPC分类号： H05B3/48
摘要： The invention relates to sensors having field effect semiconductors. The sensor of the invention comprises a ring oscillator constituted by an odd number of CMOS inverters disposed in a zone sensitive to the physical property to be measured. In order to increase the sensitivity of the sensor, the N channel of the NMOS transistor in each CMOS inverter is disposed perpendicularly to the P channel of the PMOS transistor.
摘要翻译： PCT No.PCT / FR90 / 00736 Sec。 371日期：1992年4月9日 102（e）日期1992年4月9日PCT 1990年10月15日PCT PCT。出版物WO91 / 06125 日期1991年5月2日。本发明涉及具有场效应半导体的传感器。本发明的传感器包括由奇数个CMOS反相器构成的环形振荡器，该反相器设置在对待测物理性质敏感的区域中。为了提高传感器的灵敏度，每个CMOS反相器中的NMOS晶体管的N沟道垂直于PMOS晶体管的P沟道设置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式