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    • 3. 发明申请
    • Metal-free silicon-molecule-nanotube testbed and memory device
    • 无金属硅分子纳米管测试和记忆装置
    • US20070111486A1
    • 2007-05-17
    • US11337456
    • 2006-01-23
    • James TourJianli HeBo ChenAusten FlattJason StephensonCondell Doyle
    • James TourJianli HeBo ChenAusten FlattJason StephensonCondell Doyle
    • H01L21/20
    • G11C13/02B82Y10/00B82Y30/00G11C13/0014G11C13/025H01L27/283H01L51/0048H01L51/005H01L51/0052H01L51/0595
    • Work from several laboratories has shown that metal nanofilaments cause problems in some molecular electronics testbeds. A new testbed for exploring the electrical properties of single molecules has been developed to eliminate the possibility of metal nanofilament formation and to ensure that molecular effects are measured. This metal-free system uses single-crystal silicon and single-walled carbon nanotubes as electrodes for the molecular monolayer. A direct Si-arylcarbon grafting method is used. Use of this structure with π-conjugated organic molecules results in a hysteresis loop with current-voltage measurements that are useful for an electronic memory device. The memory is non-volatile for more than 3 days, non-destructive for more than 1,000 reading operations and capable of more than 1,000 write-erase cycles before device breakdown. Devices without π-conjugated molecules (Si—H surface only) or with long-chain alkyl-bearing molecules produced no hysteresis, indicating that the observed memory effect is molecularly relevant.
    • 几个实验室的工作表明,金属纳米丝在一些分子电子测试台中引起问题。 已经开发了用于探索单分子的电性质的新试验台,以消除金属纳米丝形成的可能性并确保测量分子效应。 该无金属系统使用单晶硅和单壁碳纳米管作为分子单层的电极。 使用直接的Si-芳基碳接枝方法。 这种结构与π-共轭有机分子的使用导致了对电子存储器件有用的电流 - 电压测量的滞后回路。 存储器非易失性超过3天,对于超过1,000次读取操作是非破坏性的,并且在器件故障之前能够进行超过1,000次写擦除周期。 没有pi共轭分子(仅有Si-H表面)或具有长链烷基的分子的器件没有产生滞后,表明观察到的记忆效应是分子相关的。