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    • 4. 发明申请
    • Isotropic deposition for trench narrowing of features to be created by reactive ion etch processing
    • 通过反应离子蚀刻处理产生的特征的沟槽变窄的各向同性沉积
    • US20050000935A1
    • 2005-01-06
    • US10898799
    • 2004-07-26
    • Clinton SnyderHoward ZollaHong XuJames Kruger
    • Clinton SnyderHoward ZollaHong XuJames Kruger
    • G11B5/31B44C1/22
    • G11B5/3116G11B5/3163Y10T29/49032
    • An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.
    • 用于通过反应离子蚀刻产生的薄膜磁性写入头特征的沟槽变窄的各向同性沉积方法。 根据该方法,作为三层抗蚀剂工艺的一部分,在硬掩模和下面的聚合物层上形成光刻定义的光致抗蚀剂沟槽。 代替使用光致抗蚀剂掩模图案进行通常的硬掩模和聚合物蚀刻步骤,间隔层以一定角度各向同性地或定向地沉积以覆盖沟槽的垂直侧壁。 间隔层可通过硬掩模蚀刻工艺蚀刻,但耐聚合物蚀刻工艺。 当执行硬掩模蚀刻工艺时,施加到沟槽侧壁的间隔层材料保持完整,从而限定通过随后的基底层蚀刻工艺延伸的变窄的沟槽。