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    • 4. 发明授权
    • Method of playing a casino card game
    • 玩赌场卡游戏的方法
    • US5720484A
    • 1998-02-24
    • US752043
    • 1996-11-19
    • James Hsu
    • James Hsu
    • A63F3/00A63F1/00
    • A63F3/00157
    • A method for playing a card game having a dealer and at least one player, wherein the dealer deals two cards facing up to each player and at least two cards to the dealer, one card dealt face up and the other card or cards dealt after the playing of the players' hands. Each player arranges his cards within a boxed-in area located in front of the player having four rectangles therein. The four rectangles define two rows and two columns to provide four lines of chances for matching a winning number. The winning number is determined by the addition of the dealer's two cards and may also include a second winning number determined by the difference of the dealer's two cards. The game provides conditions for a second chance game for players who do not win with the dealer's first two cards.
    • 一种用于玩具有经销商和至少一个玩家的纸牌游戏的方法,其中经销商处理面向每个玩家的两张牌和至少两张牌给经销商,一张牌正面朝上,另一张牌或牌在 玩玩家的手。 每个玩家将他的卡片安排在位于其中具有四个矩形的玩家前面的盒装区域内。 四个矩形定义两行和两列,以提供四行机会来匹配获胜数字。 获奖号码由经销商的两张卡的添加确定,并且还可以包括由经销商的两张牌的差异确定的第二中奖号码。 该游戏为不经销商前两张牌的玩家提供第二次机会游戏的条件。
    • 5. 发明授权
    • Self-aligned buried channel/junction stacked gate flash memory cell
    • 自对准掩埋沟道/结堆叠栅极闪存单元
    • US5468981A
    • 1995-11-21
    • US299868
    • 1994-09-01
    • James Hsu
    • James Hsu
    • H01L21/8247H01L29/788H01L29/792H01L29/78
    • H01L29/7883
    • An improved one-transistor flash EEPROM cell structure and a method for making the same is provided so that the effective channel length dimension is independent of the critical dimensions of the stacked gate structure. The cell structure (110) includes an n.sup.- buried channel/junction region (116) which is implanted in a substrate (112) before formation of a tunnel oxide (126) and a stacked gate structure (134). After the formation of the stacked gate structure, a p-type source region (122) is implanted with a large tilt angle in the substrate. Thereafter, n.sup.+ drain and n.sup.+ source regions (118, 124) are implanted in the substrate so as to be self-aligned to the stacked gate structure. The cell structure of the present invention facilitates scalability to small size and is useful in high density and low voltage power supply applications.
    • 提供改进的单晶体管快速EEPROM单元结构及其制造方法,使得有效沟道长度尺寸独立于堆叠栅极结构的临界尺寸。 电池结构(110)包括在形成隧道氧化物(126)和堆叠的栅极结构(134)之前注入到衬底(112)中的n埋管沟道/结区(116)。 在层叠栅极结构的形成之后,在衬底中以大的倾斜角注入p型源区(122)。 此后,将n +漏极和n +源极区域(118,124)注入到衬底中,以便与堆叠的栅极结构自对准。 本发明的电池结构便于可扩展性小尺寸,并且在高密度和低电压电源应用中是有用的。
    • 7. 发明授权
    • Blow mold and backfill manufacturing process
    • 吹塑模具和回填制造工艺
    • US08318283B2
    • 2012-11-27
    • US13048449
    • 2011-03-15
    • James Hsu
    • James Hsu
    • B32B3/06B32B3/08B32B5/18
    • B29C44/18B29C35/0288B29C49/04B29C49/60B29C2791/001B29C2793/00B29C2793/0036B29C2793/009B29K2023/06B29K2027/06B29K2067/00B29K2075/00B29L2031/3026B29L2031/443Y10T428/233Y10T428/24314Y10T428/249953
    • Disclosed embodiments may include methods for forming a foam product comprising forming a skin and inserting a bracket at least partially into the skin. Another embodiment method for manufacturing a foam product may comprise sealing a tube of material in a cavity of a mold, blowing air into the tube of material to form a skin comprising an interior surrounded by a wall, cutting an incision in the skin wall, inserting a bracket through the incision and into the skin interior, filling the skin interior with foam, and curing the foam. Disclosed embodiments may further include foam product comprising a skin with an interior surrounded by a wall, a bracket within the skin interior, a foam substantially filling the skin interior and securing the bracket in place, a recessed region configured to mate with a mounting assembly on a chair, and an incision in the skin wall, the incision positioned outside of the recessed region.
    • 公开的实施方案可以包括形成泡沫产品的方法,包括形成皮肤并将支架至少部分地插入皮肤。 用于制造泡沫产品的另一个实施方案可以包括在模具的空腔中密封材料管,将空气吹入材料管中以形成包含由壁围成的内部的皮肤,切割皮肤壁中的切口,插入 支架通过切口进入皮肤内部,用泡沫填充皮肤内部,并固化泡沫。 公开的实施例还可以包括泡沫产品,其包括具有由壁围成的内部的皮肤,皮肤内部中的支架,基本上填充皮肤内部并将支架固定在适当位置的泡沫,被配置成与安装组件配合的凹陷区域 椅子和皮肤壁上的切口,切口位于凹陷区域的外侧。
    • 9. 发明授权
    • Method for forming a contoured floating gate cell
    • 形成轮廓浮动栅极的方法
    • US06413818B1
    • 2002-07-02
    • US09415936
    • 1999-10-08
    • Chin-Yi HuangChih-Jen HuangYun ChangJames HsuSamuel C. Pan
    • Chin-Yi HuangChih-Jen HuangYun ChangJames HsuSamuel C. Pan
    • H01L21336
    • H01L27/11521H01L21/28273H01L27/115H01L29/42324
    • A floating gate having a first and second end region, each of which are positioned adjacent to a corresponding lateral end of the floating gate. A middle region is positioned laterally towards a middle of the floating gate relative to the first and second end regions. The first end region, the middle region and the second end region are formed of a same material during a single fabrication step, and the middle region formed has a thickness which is less than a thickness of the first or second end regions. This invention further includes a method for forming a contoured floating gate for use in a floating gate memory cell. The method includes forming a polysilicon layer over first and second spaced apart oxide structures and a floating gate region between the first and second oxide structures such that the polysilicon layer formed in the floating gate region has a first end region adjacent the first oxide structure, a second end region adjacent the second oxide structure, and a middle region positioned laterally between the first and second end regions. The method further includes removing a portion of the polysilicon layer in the floating gate region such that the vertical thickness of the first and second end regions remain greater than the vertical thickness of the middle region.
    • 一种具有第一和第二端区域的浮动栅极,每个都与浮置栅极的相应横向端相邻。 中间区域相对于第一和第二端部区域侧向朝向浮动门的中间定位。 在单个制造步骤期间,第一端区域,中间区域和第二端部区域由相同的材料形成,并且形成的中间区域的厚度小于第一或第二端部区域的厚度。 本发明还包括一种用于形成在浮动栅极存储单元中使用的轮廓浮动栅极的方法。 该方法包括在第一和第二间隔开的氧化物结构之上形成多晶硅层和在第一和第二氧化物结构之间的浮栅区域,使得形成在浮动栅极区域中的多晶硅层具有与第一氧化物结构相邻的第一端区域, 与第二氧化物结构相邻的第二端区域和位于第一和第二端部区域之间横向定位的中间区域。 该方法还包括去除浮动栅极区域中的多晶硅层的一部分,使得第一和第二端部区域的垂直厚度保持大于中间区域的垂直厚度。
    • 10. 发明授权
    • Self-aligned buried channel/junction stacked gate flash memory cell
    • 自对准掩埋沟道/结堆叠栅极闪存单元
    • US5574685A
    • 1996-11-12
    • US299876
    • 1994-09-01
    • James Hsu
    • James Hsu
    • H01L21/8247H01L21/265H01L21/336H01L21/76H01L27/115H01L29/788H01L29/792G11C16/04
    • H01L29/66825H01L29/7885
    • An improved one-transistor flash EEPROM cell structure and a method for making the same is provided so that the effective channel length dimension is independent of the critical dimensions of the stacked gate structure. The cell structure (210) includes an n.sup.- buried channel/junction region (216) which is implanted in a substrate (212) before formation of a tunnel oxide (226) and a stacked gate structure (234). After the formation of the stacked gate structure, a p-type drain region (222) is implanted with a large tilt angle in the substrate. Thereafter, n.sup.+ source and n.sup.+ drain regions (218, 224) are implanted in the substrate so as to be self-aligned to the stacked gate structure. The cell structure of the present invention facilitates scalability to small size and is useful in high density application.
    • 提供改进的单晶体管快速EEPROM单元结构及其制造方法,使得有效沟道长度尺寸独立于堆叠栅极结构的临界尺寸。 电池结构(210)包括在形成隧道氧化物(226)和层叠栅极结构(234)之前被注入到衬底(212)中的n埋入沟道/结区域(216)。 在层叠栅极结构的形成之后,在衬底中注入大的倾斜角的p型漏极区(222)。 此后,将n +源极和n +漏极区域(218,224)注入到衬底中,以便与堆叠的栅极结构自对准。 本发明的电池结构有利于小尺寸的可扩展性,并且在高密度应用中是有用的。