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    • 1. 发明授权
    • Wideband ridged waveguide to diode detector transition
    • 宽带脊波导到二极管检测器转换
    • US08390403B1
    • 2013-03-05
    • US12359986
    • 2009-01-26
    • James H. SchaffnerJonathan Lynch
    • James H. SchaffnerJonathan Lynch
    • H01P1/00H01Q13/00
    • H01P5/107H01Q13/02
    • A RF pick-up probe, RF choke, and DC output line that simultaneously receives RF radiation from a waveguide and provides a detected DC voltage provided by a diode RF detector disposed in said waveguide to one or more output video lines. The RF pick-up probe, RF choke, and DC output line are preferably disposed with an antenna transition element for coupling a horn antenna to a matched diode detector which provides the aforementioned DC voltage. The transition preferably includes a ridged waveguide operatively coupled to the horn antenna; a substrate for supporting a diode chip, carrying said matched diode detector, adjacent the waveguide, the substrate also supporting a pair of RF pick-up probes, each RF probe having a portion which is coupled with the diode chip, the substrate also supporting conductors coupled to the diode chip and to the pair of RF pick-up probes; and a waveguide short circuit at least partially enclosing the diode chip and disposed adjacent the substrate.
    • 射频拾取探针,RF扼流器和DC输出线,其同时从波导接收RF辐射,并将设置在所述波导中的二极管RF检测器提供的检测到的DC电压提供给一个或多个输出视频线。 RF拾波探头,RF扼流器和DC输出线优选地设置有用于将喇叭天线耦合到提供前述直流电压的匹配二极管检测器的天线过渡元件。 转换优选地包括可操作地耦合到喇叭天线的脊状波导; 用于支撑二极管芯片的衬底,携带所述匹配的二极管检测器,邻近波导,衬底还支撑一对RF拾取探针,每个RF探针具有与二极管芯片耦合的部分,衬底还支撑导体 耦合到二极管芯片和一对RF拾取探头; 以及至少部分地封装二极管芯片并邻近衬底设置的波导短路。
    • 8. 发明申请
    • Dual band, bent monopole antenna
    • 双频,弯曲单极天线
    • US20060097935A1
    • 2006-05-11
    • US10974303
    • 2004-10-27
    • Joseph ColburnAdesunloye ObatoyinboJonathan Lynch
    • Joseph ColburnAdesunloye ObatoyinboJonathan Lynch
    • H01Q1/32
    • H01Q1/3291H01Q1/1271H01Q1/241H01Q5/357H01Q9/42
    • A dual-band monopole antenna includes a ground plane. A metal plate is located a first distance from the ground plane and includes first and second portions connecting to form a first angle therebetween. A slot is formed in the metal plate that isolates a center portion of the metal plate. The dual-band monopole antenna communicates first radio frequency (RF) signals in a first RF band and second RF signals in a second RF band. A feed tab contacts an outer surface of the metal plate and is located the first distance from the ground plane. The first RF signals and the second RF signals are vertical polarized signals. The dual-band monopole antenna produces a radiation pattern that is omnidirectional in the azimuth plane and vertically polarized in a horizontal plane. The first RF band and the second RF band are independently tuned.
    • 双频单极天线包括接地层。 金属板位于离接地平面第一距离处,并且包括连接以在其间形成第一角度的第一和第二部分。 在金属板上形成隔离金属板的中心部分的槽。 双频单极天线在第一RF频带中传送第一射频(RF)信号和在第二RF频带中传送第二RF信号。 馈电片接触金属板的外表面并且位于距接地平面的第一距离处。 第一RF信号和第二RF信号是垂直极化信号。 双波段单极天线产生在方位平面中是全向的并且在水平面中垂直极化的辐射图。 第一RF频带和第二RF频段被独立调谐。
    • 9. 发明授权
    • Monolithic array amplifier with periodic bias-line bypassing structure and method
    • 具有周期性偏置线旁路结构和方法的单片阵列放大器
    • US07034619B2
    • 2006-04-25
    • US10664112
    • 2003-09-17
    • Jonathan Lynch
    • Jonathan Lynch
    • H03F3/68
    • H03F3/195H03F1/0283H03F1/52H03F3/602H03F3/605H03F2200/451
    • A bias-line bypassing structure comprises a plurality of bias-line bypass circuits forming a periodic structure at least partially around each of a plurality of amplification units to reduce RF current flow between the amplification units and a grid-bias network. Each bias-line bypass circuit may comprise thin-film capacitors, inductive wire bridges, and thin-film resistors connected to ground vias. The thin-film capacitors may have differing values selected to resonate with an associated one of the inductive wire bridges and an associated one of the thin-film resistors to shunt RF current flow over a range of RF frequencies. In some embodiments, the inductive wire bridges may comprise inductive wire-bridge fuses to provide an open circuit in case an associated one the thin-film capacitors shorts to ground. The bias-line bypass circuits may be positioned along a bias street of the grid-bias network and spaced apart by less than a quarter-wavelength of an effective propagation constant of the bias line.
    • 偏置线旁路结构包括多个偏置线旁路电路,其形成至少部分地围绕多个放大单元中的每一个的周期性结构,以减少放大单元和网格偏置网络之间的RF电流。 每个偏置线旁路电路可以包括薄膜电容器,电感线桥和连接到接地通孔的薄膜电阻器。 薄膜电容器可以具有不同的值,以选择与谐振的感应线桥和相关联的一个薄膜电阻器,以在RF频率的范围上分流RF电流。 在一些实施例中,感应线桥可以包括感应线桥式熔断器,以在相关联的薄膜电容器与地面短路的情况下提供开路。 偏置线旁路电路可以沿着栅极偏置网络的偏置街道定位,并且间隔开偏置线的有效传播常数的四分之一波长。