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1. 发明申请

US20080220597A1 Photoresists and methods for use thereof 审中-公开
标题翻译：光刻胶及其使用方法
公开(公告)号：US20080220597A1
公开(公告)日：2008-09-11
申请号：US11981623
申请日：2007-10-31
申请人： James F. Cameron , Peter Trefonas , George G. Barclay , Jin Wuk Sung
发明人： James F. Cameron , Peter Trefonas , George G. Barclay , Jin Wuk Sung
IPC分类号： H01L21/425
CPC分类号： G03F7/40 , G03F7/0392 , G03F7/0397 , G03F7/16 , G03F7/405
摘要： New photoresists are provided that can be applied and imaged with reduced undesired outgassing and/or as thick coating layers. Preferred resists of the invention are chemically-amplified positive-acting resists that contain photoactive and resin components.
摘要翻译：提供了新的光致抗蚀剂，其可以用减少的不需要的脱气和/或作为厚的涂层施加和成像。本发明优选的抗蚀剂是含有光活性和树脂成分的化学放大的正性作用抗蚀剂。

2. 发明授权

US09123638B2 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same 有权
标题翻译：多异质结纳米颗粒，其制备方法和包含其的制品
公开(公告)号：US09123638B2
公开(公告)日：2015-09-01
申请号：US13834381
申请日：2013-03-15
申请人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
发明人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
IPC分类号： H01L29/06 , H01L29/22 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L31/0296 , H01L31/0352 , H01L29/12 , H01L33/06 , H01L51/50 , B82Y20/00
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L29/0669 , H01L29/068 , H01L29/127 , H01L29/22 , H01L31/0296 , H01L31/035218 , H01L31/035227 , H01L33/0083 , H01L33/28 , H01L51/50 , H01L51/502 , Y10S977/774 , Y10S977/95
摘要： Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.
摘要翻译：本文公开了包含具有第一端和第二端的一维半导体纳米颗粒的半导体纳米颗粒; 第二端与第一端相反; 包括第一半导体的第一节点; 其中第一节点接触一维半导体纳米颗粒的径向表面，在接触点处产生第一异质结; 以及包括第二半导体的第二节点; 其中第二节点接触一维半导体纳米颗粒的径向表面，在接触点处产生第二异质结; 其中第一异质结在组成上不同于第二异质结。

3. 发明申请

US20130209694A1 Blended block copolymer composition 失效
标题翻译：混合嵌段共聚物组成
公开(公告)号：US20130209694A1
公开(公告)日：2013-08-15
申请号：US13370606
申请日：2012-02-10
申请人： Shih-Wei Chang , Valeriy V. Ginzburg , Erin B. Vogel , Daniel J. Murray , Peter Trefonas , Phillip D. Hustad
发明人： Shih-Wei Chang , Valeriy V. Ginzburg , Erin B. Vogel , Daniel J. Murray , Peter Trefonas , Phillip D. Hustad
IPC分类号： C09D153/00 , C09D133/12 , B05D3/02 , C08K5/101
CPC分类号： C08L53/00 , B05D3/02 , B82Y40/00 , C08F120/14 , C08F297/026 , C08L2205/025 , C09D153/00 , C08F220/14 , C08F2230/085 , C08L33/12
摘要： A block copolymer composition containing a diblock copolymer blend including a first poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer; and, a second poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer. Also provided are substrates treated with the block copolymer composition.
摘要翻译：含有二嵌段共聚物共混物的嵌段共聚物组合物，包括第一聚（甲基丙烯酸甲酯）-b-聚（（三甲基甲硅烷基）甲基丙烯酸甲酯）二嵌段共聚物; 和第二聚（甲基丙烯酸甲酯）-b-聚（（三甲基甲硅烷基）甲基丙烯酸甲酯）二嵌段共聚物。还提供了用嵌段共聚物组合物处理的基材。

4. 发明授权

US08961918B2 Thermal annealing process 有权
标题翻译：热退火工艺
公开(公告)号：US08961918B2
公开(公告)日：2015-02-24
申请号：US13370907
申请日：2012-02-10
申请人： Shih-Wei Chang , Jeffrey D. Weinhold , Phillip D. Hustad , Peter Trefonas
发明人： Shih-Wei Chang , Jeffrey D. Weinhold , Phillip D. Hustad , Peter Trefonas
IPC分类号： C01B15/14 , C01B33/20 , B05D3/02 , B05D3/04
CPC分类号： H01L21/31058 , B05D1/005 , B05D3/0254 , B05D7/02 , B81C1/00031 , B81C2201/0149 , C08G77/442 , C09D151/08 , C09D183/10 , G03F7/0002 , H01L21/0337 , H01L21/31138
摘要： A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(dimethylsiloxane) block copolymer component to a surface of the substrate; optionally, baking the film; subjecting the film to a high temperature annealing process under particularized atmospheric conditions for a specified period of time; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(dimethylsiloxane) in the annealed film to SiOx.
摘要翻译：提供了一种处理衬底的方法; 其中所述方法包括将包含聚（苯乙烯）-b-聚（二甲基硅氧烷）嵌段共聚物组分的共聚物组合物的膜施加到所述基材的表面; 任选地，烘烤该膜; 在特定的大气条件下对该膜进行高温退火处理一段特定的时间; 然后处理退火的膜以从退火的膜中除去聚（苯乙烯），并将退火膜中的聚（二甲基硅氧烷）转化为SiO x。

5. 发明授权

US08937294B2 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same 有权
标题翻译：多异质结纳米颗粒，其制备方法和包含其的制品
公开(公告)号：US08937294B2
公开(公告)日：2015-01-20
申请号：US13834363
申请日：2013-03-15
申请人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
发明人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
IPC分类号： H01L33/06 , H01L29/06 , H01L21/02 , H01L31/0352
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02603 , H01L21/02606 , H01L21/02628 , H01L29/0669 , H01L29/068 , H01L29/125 , H01L29/127 , H01L29/225 , H01L31/0296 , H01L31/035218 , H01L31/035227 , H01L31/1828 , H01L33/0083 , H01L33/18 , H01L33/28 , H01L33/502 , H01L51/0037 , H01L51/0042 , H01L51/502 , H01L51/5072 , H01L2251/5369 , Y10S977/762 , Y10S977/825 , Y10S977/949
摘要： Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.
摘要翻译：本文公开了包含具有第一端和第二端的一维半导体纳米颗粒的半导体纳米颗粒; 第二端与第一端相反; 和两个第一端盖，其中一个端接触第一端，另一端接触一维半导体纳米颗粒的第二端; 其中与第一端接触的第一端帽包括第一半导体，并且其中第一端帽从一维半导体纳米颗粒的第一端延伸以形成第一纳米晶体异质结; 其中与第二端接触的第一端盖包括第二半导体; 其中第一端帽从一维半导体纳米颗粒的第二端延伸以形成第二纳米晶体异质结; 并且其中第一半导体和第二半导体在化学上彼此不同。

6. 发明申请

US20140264258A1 MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 有权
标题翻译：多功能纳米粒子，其制造方法及其包含的物质
公开(公告)号：US20140264258A1
公开(公告)日：2014-09-18
申请号：US13834363
申请日：2013-03-15
申请人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
发明人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
IPC分类号： H01L29/06 , H01L21/02 , H01L31/0352 , H01L33/06
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02603 , H01L21/02606 , H01L21/02628 , H01L29/0669 , H01L29/068 , H01L29/125 , H01L29/127 , H01L29/225 , H01L31/0296 , H01L31/035218 , H01L31/035227 , H01L31/1828 , H01L33/0083 , H01L33/18 , H01L33/28 , H01L33/502 , H01L51/0037 , H01L51/0042 , H01L51/502 , H01L51/5072 , H01L2251/5369 , Y10S977/762 , Y10S977/825 , Y10S977/949
摘要： Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.
摘要翻译：本文公开了包含具有第一端和第二端的一维半导体纳米颗粒的半导体纳米颗粒; 第二端与第一端相反; 和两个第一端盖，其中一个端接触第一端，另一端接触一维半导体纳米颗粒的第二端; 其中与第一端接触的第一端帽包括第一半导体，并且其中第一端帽从一维半导体纳米颗粒的第一端延伸以形成第一纳米晶体异质结; 其中与第二端接触的第一端盖包括第二半导体; 其中第一端帽从一维半导体纳米颗粒的第二端延伸以形成第二纳米晶体异质结; 并且其中第一半导体和第二半导体在化学上彼此不同。

7. 发明授权

US08822124B2 Underlayer composition and method of imaging underlayer composition 有权
标题翻译：底层组合物和底层成分成像方法
公开(公告)号：US08822124B2
公开(公告)日：2014-09-02
申请号：US13253012
申请日：2011-10-04
申请人： Peter Trefonas , Phillip Dene Hustad , Cynthia Pierre
发明人： Peter Trefonas , Phillip Dene Hustad , Cynthia Pierre
IPC分类号： G03C8/40
CPC分类号： G03F7/0388 , B81C1/00031 , B81C2201/0149 , C08F212/08 , C08F220/18 , C08F297/026 , G03F7/0002 , G03F7/094 , G03F7/11 , G03F7/165 , G03F7/26
摘要： A method of forming a pattern comprises diffusing an acid formed by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer having acid decomposable groups and attachment groups covalently bonded to the surface of the substrate and/or forming an interpolymer crosslink. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region on the underlayer, with the shape of the pattern. The photosensitive layer is removed, forming a self-assembling layer comprising a block copolymer having a first block with an affinity for the polar region, and a second block having less affinity for the polar region. The first block forms a domain aligned to the polar region, and the second block forms another domain aligned to the first. Removing either domain exposes a portion of the underlayer.
摘要翻译：形成图案的方法包括将通过照射感光层的一部分形成的酸扩散到包含具有酸可分解基团的酸敏感共聚物和共价键合到基材表面的附着基团和/或形成互聚物交联的底层。扩散包括加热底层和感光层。酸敏感基团与扩散的酸反应，在底层上形成具有图案形状的极性区域。去除感光层，形成包含具有对极性区域具有亲和力的第一嵌段的嵌段共聚物的自组装层和对极性区域具有较小亲和力的第二嵌段。第一块形成与极性区对准的域，并且第二块形成与第一块对准的另一域。删除任一域暴露了底层的一部分。

8. 发明授权

US08710150B2 Blended block copolymer composition 失效
标题翻译：混合嵌段共聚物组成
公开(公告)号：US08710150B2
公开(公告)日：2014-04-29
申请号：US13370606
申请日：2012-02-10
申请人： Shih-Wei Chang , Valeriy V. Ginzburg , Erin B. Vogel , Daniel J. Murray , Peter Trefonas , Phillip D. Hustad
发明人： Shih-Wei Chang , Valeriy V. Ginzburg , Erin B. Vogel , Daniel J. Murray , Peter Trefonas , Phillip D. Hustad
IPC分类号： C08L53/00 , B05D3/02
CPC分类号： C08L53/00 , B05D3/02 , B82Y40/00 , C08F120/14 , C08F297/026 , C08L2205/025 , C09D153/00 , C08F220/14 , C08F2230/085 , C08L33/12
摘要： A block copolymer composition containing a diblock copolymer blend including a first poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer; and, a second poly(methyl methacrylate)-b-poly((trimethylsilyl)methyl methacrylate) diblock copolymer. Also provided are substrates treated with the block copolymer composition.
摘要翻译：含有二嵌段共聚物共混物的嵌段共聚物组合物，包括第一聚（甲基丙烯酸甲酯）-b-聚（（三甲基甲硅烷基）甲基丙烯酸甲酯）二嵌段共聚物; 和第二聚（甲基丙烯酸甲酯）-b-聚（（三甲基甲硅烷基）甲基丙烯酸甲酯）二嵌段共聚物。还提供了用嵌段共聚物组合物处理的基材。

9. 发明申请

US20060068335A1 Coating compositions for use with an overcoated photoresist 审中-公开
标题翻译：用于外涂光致抗蚀剂的涂料组合物
公开(公告)号：US20060068335A1
公开(公告)日：2006-03-30
申请号：US11131890
申请日：2005-05-18
申请人： Suzanne Coley , Peter Trefonas , Patricia Fallon , Gerald Wayton
发明人： Suzanne Coley , Peter Trefonas , Patricia Fallon , Gerald Wayton
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/091 , G03F7/0382 , G03F7/0392
摘要： Compositions and methods are provided that can reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing or via-fill layer. Preferred coating composition and methods of the invention can provide enhanced resolution of a patterned overcoated photoresist layer and include use of low activation temperature thermal acid generators as well as multiple thermal treatments to process a layer of the underlying coating composition.
摘要翻译：提供的组合物和方法可以减少从衬底暴露辐射回到外涂光致抗蚀剂层的反射和/或作为平坦化或通孔填充层的功能。本发明优选的涂料组合物和方法可以提供图案化涂覆的光致抗蚀剂层的增强的分辨率，并且包括使用低活化温度的热酸发生剂以及多个热处理以处理下层涂料组合物的层。

10. 发明授权

US08821738B2 Thermal annealing process 有权
标题翻译：热退火工艺
公开(公告)号：US08821738B2
公开(公告)日：2014-09-02
申请号：US13547230
申请日：2012-07-12
申请人： Phillip D. Hustad , Xinyu Gu , Shih-Wei Chang , Jeffrey D. Weinhold , Peter Trefonas
发明人： Phillip D. Hustad , Xinyu Gu , Shih-Wei Chang , Jeffrey D. Weinhold , Peter Trefonas
IPC分类号： B44C1/22 , B05D3/02 , B81C1/00 , B82Y40/00 , C09D183/00 , C23C18/00
CPC分类号： B05D3/0254 , B44C1/227 , B81C1/00531 , B82Y40/00 , C08G77/442 , C09D183/00 , C09D183/10 , C23C18/00 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1241 , C23C18/1245 , C23C18/1279 , G03F7/0002 , Y10S438/947 , C08K5/05
摘要： A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; annealing the film in a gaseous atmosphere containing ≧20 wt % oxygen; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.
摘要翻译：提供了一种处理衬底的方法; 其中所述方法包括施加包含聚（苯乙烯）-b-聚（硅氧烷）嵌段共聚物组分的共聚物组合物的膜; 以及对所述基材的表面的抗氧化剂; 任选地，烘烤该膜; 在含有≥20重量％氧的气体气氛中退火该膜; 然后处理退火的膜以从退火的膜中除去聚（苯乙烯），并将退火膜中的聚（硅氧烷）转化为SiO x。

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