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    • 2. 发明授权
    • Semiconductor detector for thermal neutrons based on pyrolytic boron nitride
    • 基于热解氮化硼的热中子半导体探测器
    • US06624423B2
    • 2003-09-23
    • US10046853
    • 2002-01-14
    • Jon Russell LeistArthur William MooreAjit Yeshwant Sane
    • Jon Russell LeistArthur William MooreAjit Yeshwant Sane
    • G01T308
    • G01T3/08
    • A pBN neutron detector and method of forming a pBN neutron detector with the neutron detector formed by depositing multiple layers of pBN having a crystalline lattice structure with its crystallographic ‘c plane’ predominantly parallel to the deposited layers. The neutron detector forms a geometry having two opposite sides aligned parallel to the ‘ab planes’ of the structure and has a thickness of between one micron and one mm between the opposite sides. Metallized contacts are applied to the opposite sides and the detector is oriented relative to a source of neutrons such that the neutrons pass through the volume of the detector and cause electrons to flow in response to alpha particles generated from the interaction of neutrons with the Boron-10 isotope present in pBN.
    • 一种pBN中子探测器和用中子探测器形成pBN中子探测器的方法,该中子探测器是通过沉积多层具有结晶晶格结构的pBN而形成的,其结晶学'C平面'主要与沉积层平行。 中子检测器形成具有平行于结构的“ab平面”的两个相对侧的几何形状,并且在相对侧之间具有介于1微米与1mm之间的厚度。 金属化的触点被施加到相对侧并且检测器相对于中子源定向,使得中子通过检测器的体积并且使电子响应于从中子与硼 - 10同位素存在于pBN中。