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    • 1. 发明申请
    • STRUCTURE AND METHOD FOR PERFORMANCE IMPROVEMENT IN VERTICAL BIPOLAR TRANSISTORS
    • 垂直双极晶体管性能改进的结构和方法
    • US20060249813A1
    • 2006-11-09
    • US10908361
    • 2005-05-09
    • James DunnDavid HarameJeffrey JohnsonAlvin Joseph
    • James DunnDavid HarameJeffrey JohnsonAlvin Joseph
    • H01L27/082
    • H01L29/7371H01L27/0823H01L29/66242
    • A method of forming a semiconductor device having two different strains therein is provided. The method includes forming a strain in a first region with a first straining film, and forming a second strain in a second region with a second straining film. Either of the first or second strains may be either tensile or compressive. Additionally the strains may be formed at right angles to one another and may be additionally formed in the same region. In particular a vertical tensile strain may be formed in a base and collector region of an NPN bipolar transistor and a horizontal compressive strain may be formed in the extrinsic base region of the NPN bipolar transistor. A PNP bipolar transistor may be formed with a compression strain in the base and collector region in the vertical direction and a tensile strain in the extrinsic base region in the horizontal direction.
    • 提供了形成其中具有两个不同应变的半导体器件的方法。 该方法包括在具有第一应变膜的第一区域中形成应变,并且在第二区域中用第二应变膜形成第二应变。 第一或第二应变中的任一种可以是拉伸的或压缩的。 此外,菌株可以彼此成直角形成,并且可以另外形成在相同的区域中。 特别地,可以在NPN双极晶体管的基极和集电极区域中形成垂直拉伸应变,并且可以在NPN双极晶体管的非本征基极区域中形成水平压缩应变。 PNP双极晶体管可以在垂直方向的基极和集电极区域中形成压缩应变,并且在水平方向上在外部基极区域中形成拉伸应变。
    • 3. 发明申请
    • Novel varactors for CMOS and BiCMOS technologies
    • 用于CMOS和BiCMOS技术的新型变容二极管
    • US20050245038A1
    • 2005-11-03
    • US11053721
    • 2005-02-08
    • Douglas CoolbaughJames DunnMichael GordonMohamed HammadJeffrey JohnsonDavid Sheridan
    • Douglas CoolbaughJames DunnMichael GordonMohamed HammadJeffrey JohnsonDavid Sheridan
    • H01L21/8222H01L27/08H01L29/93H01L29/94
    • H01L27/0811H01L27/0808H01L29/93H01L29/94
    • Varactors are provided which have a high tunability and/or a high quality factor associated therewith as well as methods for fabricating the same. One type of varactor disclosed is a quasi hyper-abrupt base-collector junction varactor which includes a substrate having a collector region of a first conductivity type atop a subcollector region, the collector region having a plurality of isolation regions present therein; reach-through implant regions located between at least a pair of the isolation regions; a SiGe layer atop a portion of the substrate not containing a reach-through implant region, the SiGe layer having an extrinsic base region of a second conductivity type which is different from the first conductivity type; and an antimony implant region located between the extrinsic base region and the subcollector region. Another type of varactor disclosed is an MOS varactor which includes at least a poly gate region and a well region wherein the poly gate region and the well region have opposite polarities.
    • 提供了具有高可调性和/或与之相关的高品质因素的变形反应器及其制造方法。 公开的一种类型的变容二极管是准超突发的基极 - 集电极结变容二极管,其包括在子集电极区域顶部具有第一导电类型的集电极区域的基板,所述集电极区域中存在多个隔离区域; 位于至少一对隔离区之间的贯穿植入区; 所述SiGe层位于所述衬底的不包含直通注入区域的部分之上,所述SiGe层具有不同于所述第一导电类型的第二导电类型的非本征基区; 以及位于外部基极区域和子集电极区域之间的锑注入区域。 所公开的另一种类型的变容二极管是MOS变容二极管,其至少包括多晶硅栅极区域和阱区域,其中多晶硅栅极区域和阱区域具有相反的极性。