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1. 发明申请

US20110250458A1 LOW COEFFICIENT OF THERMAL EXPANSION (CTE) THERMOSETTING RESINS FOR INTEGRATED CIRCUIT APPLICATIONS 有权
标题翻译：用于集成电路应用的低热膨胀系数（CTE）热固性树脂
公开(公告)号：US20110250458A1
公开(公告)日：2011-10-13
申请号：US13169784
申请日：2011-06-27
申请人： James C. Matayabas, JR. , Tian-An Chen
发明人： James C. Matayabas, JR. , Tian-An Chen
IPC分类号： B32B27/38 , C08L63/00 , C08G59/14
CPC分类号： C08G59/18 , C08G59/20 , H01L2224/16245 , H01L2224/32245 , H01L2224/40245 , H01L2924/181 , Y10T428/2848 , Y10T428/31511 , Y10T428/31515 , H01L2924/00012
摘要： An embodiment of the present invention is a technique to form a resin. A mixture is formed by a curing agent dissolved in the epoxy resin. The epoxy resin contains a first rigid rod mesogen. The curing agent contains a second rigid rod mesogen and one of a hydroxyl, amine, and anhydride.
摘要翻译：本发明的一个实施方案是形成树脂的技术。混合物由溶解在环氧树脂中的固化剂形成。环氧树脂含有第一刚性棒介晶。固化剂含有第二刚性棒介晶和羟基，胺和酸酐之一。

2. 发明申请

US20120282462A1 LOW COEFFICIENT OF THERMAL EXPANSION (CTE) THERMOSETTING RESINS FOR INTEGRATED CIRCUIT APPLICATIONS 有权
标题翻译：用于集成电路应用的低热膨胀系数（CTE）热固性树脂
公开(公告)号：US20120282462A1
公开(公告)日：2012-11-08
申请号：US13550526
申请日：2012-07-16
申请人： James C. Matayabas, JR. , Tian-An Chen
发明人： James C. Matayabas, JR. , Tian-An Chen
IPC分类号： B32B27/38 , B32B27/42
CPC分类号： C08G59/18 , C08G59/20 , H01L2224/16245 , H01L2224/32245 , H01L2224/40245 , H01L2924/181 , Y10T428/2848 , Y10T428/31511 , Y10T428/31515 , H01L2924/00012
摘要： An embodiment of the present invention is a technique to form a resin. A mixture is formed by a curing agent dissolved in the epoxy resin. The epoxy resin contains a first rigid rod mesogen. The curing agent contains a second rigid rod mesogen and one of a hydroxyl, amine, and anhydride.
摘要翻译：本发明的一个实施方案是形成树脂的技术。混合物由溶解在环氧树脂中的固化剂形成。环氧树脂含有第一刚性棒介晶。固化剂含有第二刚性棒介晶，羟基，胺和酸酐之一。

3. 发明授权

US08242216B2 Low coefficient of thermal expansion (CTE) thermosetting resins for integrated circuit applications 有权
标题翻译：用于集成电路应用的低热膨胀系数（CTE）热固性树脂
公开(公告)号：US08242216B2
公开(公告)日：2012-08-14
申请号：US13169784
申请日：2011-06-27
申请人： James C. Matayabas, Jr. , Tian-An Chen
发明人： James C. Matayabas, Jr. , Tian-An Chen
IPC分类号： C08L63/00
CPC分类号： C08G59/18 , C08G59/20 , H01L2224/16245 , H01L2224/32245 , H01L2224/40245 , H01L2924/181 , Y10T428/2848 , Y10T428/31511 , Y10T428/31515 , H01L2924/00012
摘要： An embodiment of the present invention is a technique to form a resin. A mixture is formed by a curing agent dissolved in the epoxy resin. The epoxy resin contains a first rigid rod mesogen. The curing agent contains a second rigid rod mesogen and one of a hydroxyl, amine, and anhydride.
摘要翻译：本发明的一个实施方案是形成树脂的技术。混合物由溶解在环氧树脂中的固化剂形成。环氧树脂含有第一刚性棒介晶。固化剂含有第二刚性棒介晶，羟基，胺和酸酐之一。

4. 发明授权

US07999042B2 Low coefficient of thermal expansion (CTE) thermosetting resins for integrated circuit applications 有权
标题翻译：用于集成电路应用的低热膨胀系数（CTE）热固性树脂
公开(公告)号：US07999042B2
公开(公告)日：2011-08-16
申请号：US10876444
申请日：2004-06-25
申请人： James C. Matayabas, Jr. , Tian-An Chen
发明人： James C. Matayabas, Jr. , Tian-An Chen
IPC分类号： C08L63/00
CPC分类号： C08G59/18 , C08G59/20 , H01L2224/16245 , H01L2224/32245 , H01L2224/40245 , H01L2924/181 , Y10T428/2848 , Y10T428/31511 , Y10T428/31515 , H01L2924/00012
摘要： An embodiment of the present invention is a technique to form a resin. A mixture is formed by a curing agent dissolved in the epoxy resin. The epoxy resin contains a first rigid rod mesogen. The curing agent contains a second rigid rod mesogen and one of a hydroxyl, amine, and anhydride.
摘要翻译：本发明的一个实施方案是形成树脂的技术。混合物由溶解在环氧树脂中的固化剂形成。环氧树脂含有第一刚性棒介晶。固化剂含有第二刚性棒介晶和羟基，胺和酸酐之一。

5. 发明授权

US08431223B2 Low coefficient of thermal expansion (CTE) thermosetting resins for integrated circuit applications 有权
标题翻译：用于集成电路应用的低热膨胀系数（CTE）热固性树脂
公开(公告)号：US08431223B2
公开(公告)日：2013-04-30
申请号：US13550526
申请日：2012-07-16
申请人： James C. Matayabas, Jr. , Tian-An Chen
发明人： James C. Matayabas, Jr. , Tian-An Chen
IPC分类号： B32B27/26 , B32B27/38 , H01L23/29 , C08L63/00
CPC分类号： C08G59/18 , C08G59/20 , H01L2224/16245 , H01L2224/32245 , H01L2224/40245 , H01L2924/181 , Y10T428/2848 , Y10T428/31511 , Y10T428/31515 , H01L2924/00012
摘要： An embodiment of the present invention is a technique to form a resin. A mixture is formed by a curing agent dissolved in the epoxy resin. The epoxy resin contains a first rigid rod mesogen. The curing agent contains a second rigid rod mesogen and one of a hydroxyl, amine, and anhydride.
摘要翻译：本发明的一个实施方案是形成树脂的技术。混合物由溶解在环氧树脂中的固化剂形成。环氧树脂含有第一刚性棒介晶。固化剂含有第二刚性棒介晶和羟基，胺和酸酐之一。

6. 发明申请

US20070066032A1 Nanopowder coating for scribing and structures formed thereby 有权
标题翻译：用于划线的纳米粉末涂层和由此形成的结构
公开(公告)号：US20070066032A1
公开(公告)日：2007-03-22
申请号：US11230367
申请日：2005-09-19
申请人： Daoqiang Lu , Eric Li , Tian-An Chen
发明人： Daoqiang Lu , Eric Li , Tian-An Chen
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/18 , B82Y30/00
摘要： Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a conformal layer of a water soluble nanopowder on a wafer, and then scribing the wafer.
摘要翻译：描述形成微电子结构的方法。这些方法的实施例包括在晶片上形成水溶性纳米粉末的共形层，然后划线晶片。

7. 发明申请

US20050147489A1 Wafer supporting system for semiconductor wafers 审中-公开
标题翻译：晶圆支撑系统用于半导体晶圆
公开(公告)号：US20050147489A1
公开(公告)日：2005-07-07
申请号：US10745923
申请日：2003-12-24
申请人： Tian-An Chen , Daoqiang Lu
发明人： Tian-An Chen , Daoqiang Lu
IPC分类号： B66C17/08 , H01L21/68
CPC分类号： H01L21/6836 , H01L2221/68327
摘要： The embodiments of the present invention include coating a semiconductor wafer with a polymer layer and attaching the polymer layer to a support substrate with a tape. The tape has at least two adhesive sides, and at least one radiation sensitive side. The radiation sensitive side facilitates release of the tape.
摘要翻译：本发明的实施例包括用聚合物层涂覆半导体晶片并且用胶带将聚合物层附着到支撑基板上。胶带具有至少两个粘合剂侧面和至少一个辐射敏感侧。辐射敏感侧有利于胶带的释放。

8. 发明申请

US20050087891A1 No-flow underfill composition and method 失效
标题翻译：无流动底层填料的组成和方法
公开(公告)号：US20050087891A1
公开(公告)日：2005-04-28
申请号：US10692062
申请日：2003-10-23
申请人： Christopher Rumer , Tian-An Chen , Vijay Wakharkar , Paul Koning
发明人： Christopher Rumer , Tian-An Chen , Vijay Wakharkar , Paul Koning
IPC分类号： H01L21/56 , H01L21/60 , H01L23/29
CPC分类号： H01L24/31 , H01L21/563 , H01L23/295 , H01L24/29 , H01L24/81 , H01L2224/16225 , H01L2224/29499 , H01L2224/32225 , H01L2224/32505 , H01L2224/73203 , H01L2224/73204 , H01L2224/81193 , H01L2224/81801 , H01L2224/83192 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01021 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2924/00012
摘要： In some embodiments, a method includes providing a composition which includes a base at least partially filled with filler particles and applying the composition as an underfill composition. At least some of the filler particles are electrically conductive.
摘要翻译：在一些实施方案中，一种方法包括提供一种组合物，其包括至少部分填充有填料颗粒的基质并将该组合物作为底部填充剂组合物施用。至少一些填料颗粒是导电的。

9. 发明授权

US06872654B2 Method of fabricating a bismaleimide (BMI) ASA sacrifical material for an integrated circuit air gap dielectric 失效
标题翻译：制造用于集成电路气隙电介质的双马来酰亚胺（BMI）ASA牺牲材料的方法
公开(公告)号：US06872654B2
公开(公告)日：2005-03-29
申请号：US10330619
申请日：2002-12-26
申请人： Tian-An Chen , Kevin P. O'Brien
发明人： Tian-An Chen , Kevin P. O'Brien
IPC分类号： H01L21/312 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/7682 , H01L21/02118 , H01L21/02203 , H01L21/02282 , H01L21/02348 , H01L21/312
摘要： A method for implementing a bismaleimide (BMI) polymer as a sacrificial material for an integrated circuit air gap dielectric. The method of one embodiment comprises forming a first and second metal interconnect lines on a substrate, wherein at least a portion of the first and second metal interconnect lines extend parallel to one another and wherein a trough is located between the parallel portion of said first and second metal interconnect lines. A layer of bismaleimide is spin coated over the substrate. The layer of bismaleimide is polished with a chemical mechanical polish, wherein the trough remains filled with the bismaleimide. A diffusion layer is formed over the substrate. The substrate is heated to activate a pyrolysis of the bismaleimide. An air gap is formed in the trough in the space vacated by the bismaleimide.
摘要翻译：一种用于实现用于集成电路气隙电介质的双马来酰亚胺（BMI）聚合物作为牺牲材料的方法。一个实施例的方法包括在衬底上形成第一和第二金属互连线，其中第一和第二金属互连线的至少一部分彼此平行延伸，并且其中槽位于所述第一和第二金属互连线的平行部分之间，第二金属互连线。将一层双马来酰亚胺旋涂在基材上。用化学机械抛光剂抛光双马来酰亚胺层，其中槽保持充满双马来酰亚胺。在衬底上形成扩散层。加热底物以活化双马来酰亚胺的热解。在由双马来酰亚胺空出的空间中的槽中形成气隙。

10. 发明授权

US06610114B2 Oxidizing polishing slurries for low dielectric constant materials 失效
公开(公告)号：US06610114B2
公开(公告)日：2003-08-26
申请号：US09882000
申请日：2001-06-14
申请人： Dan Towery , Neil Hendricks , Paul Schilling , Tian-An Chen
发明人： Dan Towery , Neil Hendricks , Paul Schilling , Tian-An Chen
IPC分类号： C09G102
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1463 , Y10S977/775 , Y10S977/776 , Y10S977/888
摘要： An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.

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