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1. 发明授权

US4530244A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4530244A
公开(公告)日：1985-07-23
申请号：US623632
申请日：1984-06-25
申请人： James B. Starr
发明人： James B. Starr
IPC分类号： G01L9/00 , G01L9/06
CPC分类号： G01L9/0054 , G01L9/065
摘要： A transducer for sensing pressure formed of a single crystal semiconductor chip having a cavity formed in one surface, wherein a tube to communicate pressure to the cavity surrounds the cavity, wherein pressure measuring sensors are disposed opposite the cavity and wherein additional pressure-responsive sensors are disposed on the chip to provide a signal for compensating for zero shift temperature and pressure induced signals generated by the measuring sensors.
摘要翻译：一种传感器，用于感测由具有在一个表面中形成的空腔的单晶半导体芯片形成的压力，其中与空腔相通的压力的管围绕所述空腔，其中压力测量传感器设置成与所述空腔相对，并且其中附加的压力响应传感器设置在芯片上以提供用于补偿由测量传感器产生的零点偏移温度和压力感应信号的信号。

2. 发明授权

US4649363A Sensor 失效
标题翻译：传感器
公开(公告)号：US4649363A
公开(公告)日：1987-03-10
申请号：US757715
申请日：1985-07-22
申请人： James B. Starr
发明人： James B. Starr
IPC分类号： G01L9/00 , G01L19/06
CPC分类号： G01L19/147 , G01L19/0618
摘要： A sensor having a silicon die having a central region and a flexible annular sensing portion surrounding the central region. The sensor has apparatus carried by the central region of the die for limiting the movement of the central region in each of two opposite directions.
摘要翻译：一种传感器，具有具有中心区域的硅模片和围绕中心区域的柔性环形感测部分。传感器具有由模具的中心区域承载的装置，用于限制中心区域沿两个相反方向的运动。

3. 发明授权

US4166264A Intrusion detection transducers 失效
标题翻译：侵入式检测传感器
公开(公告)号：US4166264A
公开(公告)日：1979-08-28
申请号：US864966
申请日：1977-12-27
申请人： James B. Starr
发明人： James B. Starr
IPC分类号： G08B13/24 , G08B13/26 , H01F27/30
CPC分类号： G08B13/2497 , G08B13/26
摘要： The invention comprises a plurality of intrusion detection transducers connected together wherein each transducer has a central core extending along an axis and having a length along that axis defined as XL where X is an even number of at least two and L is a given length. At least one sensing winding wire is wound around the core to provide a first-hand winding of L/2 length, X-1 number of windings of length L, and a second end winding of L/2 length, each adjacent winding being a reverse polarity to the next adjacent winding. Means are provided to connect each transducer to the adjacent transducers such that the first end of one transducer connects to the second end of the adjacent transducer.

4. 发明授权

US6006607A Piezoresistive pressure sensor with sculpted diaphragm 失效
标题翻译：压电式压力传感器，带雕刻膜片
公开(公告)号：US6006607A
公开(公告)日：1999-12-28
申请号：US144118
申请日：1998-08-31
申请人： Janusz Bryzek , David W. Burns , Sean S. Cahill , Steven S. Nasiri , James B. Starr
发明人： Janusz Bryzek , David W. Burns , Sean S. Cahill , Steven S. Nasiri , James B. Starr
IPC分类号： G01L9/00 , G01L9/06
CPC分类号： G01L9/0042 , G01L9/0054
摘要： The present invention is a semiconductor pressure sensor. In one embodiment, the semiconductor pressure sensor includes a diaphragm having a first thickness and at least cone raised boss that is coupled to a first side of the diaphragm. The at least one raised boss increases the diaphragm thickness in the region occupied by the at least one raised boss to a second thickness. A plurality of piezoresistors are disposed on a second side of the diaphragm in regions of the first thickness. In another embodiment, a semiconductor pressure sensor diaphragm includes at least one raised boss disposed along a central axis on a first side of the diaphragm. At least two raised bridge regions are disposed along the central axis, interconnecting the at least one raised boss and a diaphragm edge. Each raised bridge region is narrower than the raised boss. A plurality of piezoresistors are disposed on the raised bridge regions of the diaphragm along the central axis.
摘要翻译：本发明是半导体压力传感器。在一个实施例中，半导体压力传感器包括具有第一厚度和至少锥形凸起的隔膜，该凸起联接到隔膜的第一侧。所述至少一个凸起凸台将所述至少一个凸起凸起所占据的区域中的隔膜厚度增加到第二厚度。多个压电电阻器设置在第一厚度的区域中的隔膜的第二侧上。在另一个实施例中，半导体压力传感器膜片包括至少一个凸起的凸起部分，其沿着中心轴线设置在隔膜的第一侧上。至少两个凸起的桥接区域沿着中心轴线布置，将至少一个凸起的凸起和隔膜边缘互连。每个凸起的桥梁区域比凸起的凸起更窄。多个压电电阻器沿着中心轴设置在隔膜的凸起的桥接区域上。

5. 发明授权

US5929542A Micromechanical stepper motor 失效
标题翻译：微机电步进电机
公开(公告)号：US5929542A
公开(公告)日：1999-07-27
申请号：US794580
申请日：1997-02-03
申请人： Thomas R. Ohnstein , J. David Zook , James B. Starr
发明人： Thomas R. Ohnstein , J. David Zook , James B. Starr
IPC分类号： H02K7/08 , H02K41/03 , H02K15/00
CPC分类号： H02K41/03 , H02K99/00 , H02K7/08 , Y10S310/06
摘要： A micromachined stepper motor having a toothed slider connected at either end to spring flexures. At least one of the spring flexures is positioned between a load, such as a high pass optical filter, and the slider. The slider is positioned within three stators that are sequentially energized such that they move the slider along its longitudinal axis. The springs and guide posts hold the slider in place and establish a rest position when no driving force is applied.
摘要翻译：具有在任一端连接到弹簧挠曲的齿形滑块的微加工步进电机。弹簧挠曲中的至少一个位于诸如高通光学滤光器的负载和滑块之间。滑块定位在三个定子中，其被依次通电，使得它们沿其纵向轴线移动滑块。弹簧和导向柱将滑块固定就位，并且在不施加驱动力的情况下建立静止位置。

6. 发明授权

US4439752A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4439752A
公开(公告)日：1984-03-27
申请号：US314650
申请日：1981-10-26
申请人： James B. Starr
发明人： James B. Starr
IPC分类号： G01L9/00 , G01L1/22
CPC分类号： G01L9/0054
摘要： A transducer for sensing pressure, wherein the transducer is formed of a single crystal semiconductor square chip having piezoresistive stress sensors disposed on one surface thereof and a cavity formed in the opposite surface, and wherein one of the edges of the chip is oriented at an angle of substantially 22.5.degree. with respect to a crystal direction of the chip.
摘要翻译：一种用于感测压力的换能器，其中所述换能器由具有设置在其一个表面上的压阻应力传感器的单晶半导体正方形芯片和形成在相对表面中的空腔形成，并且其中所述芯片的一个边缘以一定角度相对于芯片的<110>晶体方向基本上为22.5°。

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