专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060093924A1 Method and apparatus for correction of defects in lithography masks 失效
标题翻译：用于校正光刻掩模中的缺陷的方法和装置
公开(公告)号：US20060093924A1
公开(公告)日：2006-05-04
申请号：US10904308
申请日：2004-11-03
申请人： James Adkisson , Eric Coker , Christopher Magg , Jed Rankin , Anthony Stamper
发明人： James Adkisson , Eric Coker , Christopher Magg , Jed Rankin , Anthony Stamper
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/72 , G03F1/70
摘要： A method for correction of defects in lithography masks includes determining the existence of mask defects on an original mask, and identifying a stitchable zone around each of the mask defects found on the original mask. Each of the identified stitchable zones on the original mask is blocked out such that circuitry within the stitchable zones is not printed out during exposure of the original mask. A repair mask is formed, the repair mask including corrected circuit patterns from each of the identified stitchable zones.
摘要翻译：用于校正光刻掩模中的缺陷的方法包括确定原始掩模上的掩模缺陷的存在，以及识别在原始掩模上发现的每个掩模缺陷周围的可缝合区域。原始掩模上的每个识别的可缝合区域被阻挡，使得在原始掩模曝光期间不能打印出可缝合区域内的电路。形成修复掩模，修复掩模包括来自每个识别的可缝合区域的校正电路图案。

2. 发明申请

US20110085723A1 Mask Program Defect Test 有权
标题翻译：面罩程序缺陷测试
公开(公告)号：US20110085723A1
公开(公告)日：2011-04-14
申请号：US12576597
申请日：2009-10-09
申请人： Karen D. Badger , Emily E. Gallagher , Christopher Magg
发明人： Karen D. Badger , Emily E. Gallagher , Christopher Magg
IPC分类号： G06K9/62
CPC分类号： G01N21/95607 , G06T7/001 , G06T2207/30141
摘要： A method and programmed defect test database for designing and building programmed defect test masks. The method uses a defect free mask that is compared to a ‘defective’ database. A variety of defect types and sizes is programmed into the database and used to inspect the defect-free mask. All defects programmed into the database are not affected by performing the method, regardless of size, so the resolution capability of an inspection tool can be determined.
摘要翻译：一种用于设计和构建编程缺陷测试掩模的方法和编程缺陷测试数据库。该方法使用与“有缺陷”数据库进行比较的无缺陷掩模。各种缺陷类型和大小被编入数据库中，用于检查无缺陷的掩模。编制到数据库中的所有缺陷不受执行方法的影响，无论大小如何，因此可以确定检查工具的分辨率能力。

3. 发明申请

US20070050163A1 MASK INSPECTION DNIR PLACEMENT BASED ON LOCATION OF TRI-TONE LEVEL DATABASE IMAGES (2P SHAPES) 失效
标题翻译：基于三电平数据库图像的位置的掩码检查DNIR放置（2P形状）
公开(公告)号：US20070050163A1
公开(公告)日：2007-03-01
申请号：US11162179
申请日：2005-08-31
申请人： Karen Badger , David Katcoff , Jeffrey Lissor , Christopher Magg
发明人： Karen Badger , David Katcoff , Jeffrey Lissor , Christopher Magg
IPC分类号： G01B5/28
CPC分类号： G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Methods, systems, program storage devices and computer program products for mask inspection that automate the detection and placement of do not inspect regions (“DNIR”) for intentionally induced defects on masks. A location of an intentional defect is identified on a mask, and then logic relating to this location is translated into a shape that represents a DNIR for the intentional defect. A second shape representing another DNIR of the mask is provided. It is then determined if the first and second shapes for DNIRs violate a processing rule of the inspection tool, and if so, the violated rule is corrected for by generating a single contiguous DNIR by overlapping the first and second shapes. The inspection tool then utilizes the first and second shapes representing DNIRs, along with any single contiguous DNIRs, to inspect the mask for unintentional defects while avoiding intentional defects.
摘要翻译：用于掩模检查的方法，系统，程序存储设备和计算机程序产品，可自动检测和放置不要检查区域（“DNIR”），以便有意导致的掩模缺陷。在掩模上识别有意缺陷的位置，然后将与该位置相关的逻辑转换为表示有意缺陷的DNIR的形状。提供了代表掩模的另一DNIR的第二形状。然后确定DNIR的第一和第二形状是否违反检查工具的处理规则，如果是，则通过重叠第一和第二形状来生成单个连续的DNIR来校正违反的规则。然后，检查工具利用表示DNIR的第一和第二形状以及任何单个相邻的DNIR，以在避免有意的缺陷的同时检查掩模的无意的缺陷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式